Search NASA⌕ Search

SEARCH · Search NASA

Results for “ELECTRON RECOMBINATION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 289 records · Page 16

Experimental and computer studies of the radiation effects in silicon solar cells

A summary of selected experimental results obtained on lithium-diffused bulk silicon is presented. Particular emphasis is placed on the radiation-induced degradation and thermal annealing of minority carriers in bulk silicon because solar cell output is related to the minority carrier lifetime. The temperature dependence of the minority carrier lifetime indicates the density and energy levels of the recombination centers and provides clues to their identity. Electron spin resonance and infrared absorption techniques are used to investigate the introduction and anneal of three specific radiation induced defects, which are thought to contribute to the recombination process.

Leadon, R. E.↗

6300 A quantum efficiency of the recombination mechanism in the night-time F layer.

Simultaneous airglow and electron content measurements made at Hawaii are used to infer the number of 6300 and 6364 A quanta produced per electron lost in the nighttime F layer of the ionosphere. The equation of continuity of electrons is then solved numerically to obtain the electron density profile, and the amount of quenching is estimated. This leads to the number of excitations of O(super-1 D) per O2(+) recombination (epsilon). We find, for an exospheric temperature of 1100 K, epsilon is equal to 1.1 plus or minus 0.6, in good agreement with Zipf's laboratory measurement at 300 K.

Brown, W. E.↗

A model of Comet P/Giacobini-Zinner

A computer model of Comet P/Giacobini-Zinner is presented which contains photoprocesses, gas-phase chemical kinetics, energy balance, multifluid hydrodynamics with a transition to free molecular flow, and solar wind interaction. Recently the physics for electrons in the model has been improved by including electron impact ionization and dissociation and separately accounting for electron energetics. Electron heating and cooling mechanisms include photoprocesses, recombination processes, inelastic and elastic collisions with heavy molecules, and expansion cooling. The model incorporates an internally consistent interaction of the solar wind with the coma gas using the axisymmetric ideal fluid dynamic equations. The nuclear size and composition have been chosen to make the calculations relevant to the September 11, 1985 International Cometary Explorer (ICE) encounter with Comet P/Giacobini-Zinner. Model profiles of the temperature, velocity, and number density of the electrons are in good agreement with measurements along ICE's trajectory. The results indicate the probe passed through a region of the coma at the onset of the plasma tail.

Boice, D. C.↗

Determination of surface recombination velocity in heavily doped silicon

A method was developed and successfully tested for the determination of the effective surface recombination velocity of silicon layers doped by diffusion of phosphorus to a level of 10 to the 19th to 10 to the 21st per cu cm. The effective recombination velocity was obtained from the dependence of the electron-beam-induced current on the penetration of the electron beam of a scanning electron microscope. A special silicon diode was constructed which permitted the collection at the p-n junction of the carriers excited by the electron beam. This diode also permitted the study of the effects of surface preparation on the effective surface recombination velocity.

Watanabe, M.↗

Radiative recombination of complex ions

The rates of radiative capture by atomic systems is computed for the first four ionization stages of the abundant elements C, N, O, Ne, Mg, Si, S, and Ar. A simple prescription is given for calculating the rates for systems in higher ionization stages. Results for capture to atomic helium are also given. In the general case, recent calculations of photoionization cross sections have been used to compute capture rates to levels of the ground-state configuration of the recombined species. Captures to other levels of the valence shell and to the higher shells are evaluated using hydrogenic formulae but with a correction factor which takes into account the nonhydrogenic nature of these states. This correction factor is due to the incomplete shielding by the inner electrons and represents essentially an effective charge for the recombining ion; it is determined semiempirically from an appropriate weighting of values derived from the observed level structure for each species. In some cases, for the capture to neutral atomic systems, its application increases the resulting computed recombination rate by a significant amount (about 50%). Computed recombination rates are tabulated for the four ionization stages at an electron temperature of 10,000 K and for the first stage at 100 K. A convenient procedure is outlined for evaluating the rates at other temperatures in the general neighborhood of these values.

Gould, R. J.↗

Recombination line intensities for hydrogenic ions. II - Case B calculations for C VI, N VII and O VIII

The intensities of recombination lines formed in extended, optically thim, photoionized plasmas such as those found in PN, H II regions, and winds of certain hot stars are an important source of information on chemical abundances and can sometimes provide estimates of electron temperature. In this paper, the intensities of the recombination lines of C VI, N VII, and O VIII are calculated, accounting for both electron and heavy particle collisions and assuming case B of Baker and Menzel. The computational procedure is explained. The intensities of lines formed by transitions n(u) - n(l) are tabulated for n(u) of 50 or less, n(l) of 29 or less, at log N(e) = 4(1)13 and 10 values of electron temperature in the interval 10,000 K to 500,000 K.

Storey, P. J.↗

Carrier generation, recombination, trapping, and transport in semiconductors with position-dependent composition

The spatial variation of the chemical composition of a semiconductor modifies the ideal one-electron energy band model as well as the Shockley equations for carrier recombination and transport in two important ways. The random component of the spatial variation introduces localized states in the energy gap by perturbing the band states. The nonrandom component gives rise to the position dependences of the conduction and valence band edges or the electron affinity and the energy gap. This paper gives the modifications of the Shockley equations from these two effects as well as an example of the steady-state recombination rate from distributed gap states in junction solar cells

Sah, C.-T.↗

Statistical equilibrium calculations for silicon in early-type model stellar atmospheres

Line profiles of 36 multiplets of silicon (Si) II, III, and IV were computed for a grid of model atmospheres covering the range from 15,000 to 35,000 K in effective temperature and 2.5 to 4.5 in log (gravity). The computations involved simultaneous solution of the steady-state statistical equilibrium equations for the populations and of the equation of radiative transfer in the lines. The variables were linearized, and successive corrections were computed until a minimal accuracy of 1/1000 in the line intensities was reached. The common assumption of local thermodynamic equilibrium (LTE) was dropped. The model atmospheres used also were computed by non-LTE methods. Some effects that were incorporated into the calculations were the depression of the continuum by free electrons, hydrogen and ionized helium line blocking, and auto-ionization and dielectronic recombination, which later were found to be insignificant. Use of radiation damping and detailed electron (quadratic Stark) damping constants had small but significant effects on the strong resonance lines of Si III and IV. For weak and intermediate-strength lines, large differences with respect to LTE computations, the results of which are also presented, were found in line shapes and strengths. For the strong lines the differences are generally small, except for the models at the hot, low-gravity extreme of our range. These computations should be useful in the interpretation of the spectra of stars in the spectral range B0-B5, luminosity classes III, IV, and V.

Kamp, L. W.↗

Theoretical studies of important processes in planetary and comet atmospheres

The dissociative recombination (DR) of the AB(+) molecular ion with an electron has been shown to be an important component in the detailed interpretation of planetary ionosphere data. A first principles theoretical approach is developed for calculating the DR cross sections and rates for AB(+) molecular ions. The calculations focus on O2(+) and N2(+) DR, and are the first to include the indirect DR mechanism (Ryberg vibrational levels below v = 0 level of ion) for a molecule larger than H2(+). The importance of electron capture width in calculating the cross sections and rates is also examined. Electron capture widths are given for all states of O2 that are of importance to DR (lowest 10 vibrational levels of ion). Knowledge of the details of dissociative recombination will be needed for interpretation of data from future interplanetary and comet atmospheric studies.

Guberman, Steven L.↗

On dielectronic recombination and resonances in excitation cross sections

It is found that the contribution to the dielectronic recombination rate of stabilizing transitions of the outer electron is within the 30% accuracy of the Burgess rates calculated by neglecting this process even for Delta n = 0 transitions for astrophysically important ions. Autoionization to excited levels, ignored in the Burgess procedure and shown by Jacobs et al. (1977) to be important for some ions in the calculation of the dielectronic recombination rate, is discussed with reference to the resonance excitation of some astrophysically important X-ray lines. In particular, the contribution of resonances to the excitation of several lines in the helium and neon isosequences is estimated.

Raymond, J. C.↗

The MPD arc as a plasmadynamic laser source

The paper reports results of measurements of local plasma properties (electron density and temperature, radiance, and population density) in the recombining plasma flow of a high power (100 kW) quasi-steady MPD arc designed as a plasmadynamic laser source. The profiles of electron density and temperature and the populations of excited states of Ar II show large deviations from LTE and indicate the existence of population inversions between the 4d and 4p states.

Campbell, E. M.↗

Twilight airglow. I - Photoelectrons and forbidden O I 5577-angstrom radiation.

A payload consisting of a number of experiments to study the earth's atmosphere was launched from White Sands on Feb. 8, 1971. The differential photoelectron flux spectrum was measured as a function of altitude. The energy distribution revealed the N2 vibrational structure appearing at 2.8 V, rising to a maximum at 4 eV, decreasing to an 8-volt-wide plateau at 20 V, and then further decreasing. The ion and electron density distributions were measured simultaneously. An optical measurement of forbidden O I 5577-A radiation was made. Both electron impact on atomic oxygen and dissociative recombination of O2(+) were found to produce this emission above 150 km. The recombination rate for the O(1 S) found from a reported nightglow profile is 2.5 plus or minus 1.5 x 10 to the minus 9th cu cm/sec. Between 140 and 120 km, photodissociation is a source of 5577 radiation. Chapman three-body recombination is dominant below 120 km.

Hays, P. B.↗

Optical Line Radiation from Uranium Plasmas

The radiative energy current due to line radiation is calculated in a U 235 plasma over a temperature range of 5000 K to 8000 K. Also a variation in the neutron flux of 2 x 10 to the 12th power neutrons/ (sq cm-sec) to 2 x 10 to the 16th power neutrons/(sq cm-sec) is considered. The plasma forms a cylinder with a diameter and height of one meter. To calculate the radiative-energy current, a rate equation formalism is developed to solve for the atomic state densities along with a model for the energy levels in neutral and singly ionized uranium. Because the electron states in uranium lie below 5eV, recombination is the principle excitation mechanism. At and above 6000 K, inversions were found, and at all temperatures the line radiation at line center was greater than the corresponding black-body radiation. There are negligible differences in the radiative-energy current at 6000 K for variations in the neutron flux. The average opacity, which varied from 100 to 100,000 gm/sq cm, over the frequency range of line radiation is calculated.

Maceda, E. L.↗

An experimental and theoretical study of the mean diurnal variation of O/+/, NO/+/, O2/+/, and N2/+/ ions in the mid-latitude F1 layer of the ionosphere

A theoretical model of the diurnal variations in the compositions of the ions O(+), NO(+), O2(+) and N2(+) in the midlatitude F1 layer is presented and compared with measurements made by AE-C. The theoretical model includes the rate coefficients and branching ratios for the dissociative recombination of NO(+), O2(+) and N2(+) with electrons and the ion-atom interchanges of O(+) with N2 and N2(+) with O. Input parameters to the model comprise measurements of ion and electron temperatures, neutral atmosphere composition, the solar EUV flux and the photoelectron spectrum. In general, model calculations are found to agree with satellite measurements, confirming the major ion sources and sinks of the photochemical model, which has an accuracy of + or - 60%.

Torr, D. G.↗

High pressure laser plasma studies

The operation of a nuclear pumped laser, operating at a wavelength of 1.79 micron m on the 3d(1/2-4p(3/2) transition in argon with helium-3 as the majority gas is discussed. The energy pathways in He-Ar gas were investigated by observing the effects of varying partial pressures on the emissions of levels lying above the 4p level in argon during a pulsed afterglow. An attempt is made to determine the population mechanisms of the 3d level in pure argon by observing emission from the same transition in a high pressure plasma excited by a high energy electron beam. Both collisional radiative and dissociative recombination are discussed.

Wells, W. E.↗

Circuit for Lifetime and Surface-Recombination Measurements

Test circuit for silicon solar cells suppresses spurious effects. New circuit increases accuracy of measurements of recombination lifetime and effective surface recombination velocity in silicon solar cell. Fast electronic switch, circuit grounds forward-biased cell so rapidly transient voltage to be measured not affected significantly.

Lindholm, F. A.↗