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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16

Effects Of Dose Rates On Radiation Damage In CMOS Parts

Report describes measurements of effects of ionizing-radiation dose rate on consequent damage to complementary metal oxide/semiconductor (CMOS) electronic devices. Depending on irradiation time and degree of annealing, survivability of devices in outer space, or after explosion of nuclear weapons, enhanced. Annealing involving recovery beyond pre-irradiation conditions (rebound) detrimental. Damage more severe at lower dose rates.

Goben, Charles A.↗

Theory of wide-angle photometry from standard stars

Wide angle celestial structures, such as bright comet tails and nearby galaxies and clusters of galaxies, rely on photographic methods for quantified morphology and photometry, primarily because electronic devices with comparable resolution and sky coverage are beyond current technological capability. The problem of the photometry of extended structures and of how this problem may be overcome through calibration by photometric standard stars is examined. The perfect properties of the ideal field of view are stated in the guise of a radiometric paraxial approximation, in the hope that fields of view of actual telescopes will conform. Fundamental radiometric concepts are worked through before the issue of atmospheric attenuation is addressed. The independence of observed atmospheric extinction and surface brightness leads off the quest for formal solutions to the problem of surface photometry. Methods and problems of solution are discussed. The spectre is confronted in the spirit of standard stars and shown to be chimerical in that light, provided certain rituals are adopted. After a brief discussion of Baker-Sampson polynomials and the vexing issue of saturation, a pursuit is made of actual numbers to be expected in real cases. While the numbers crunched are gathered ex nihilo, they demonstrate the feasibility of Newton's method in the solution of this overdetermined, nonlinear, least square, multiparametric, photometric problem.

Usher, Peter D.↗

Method of forming three-dimensional semiconductor structures

Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow columns of metal silicide embedded in a matrix of single crystal, epitaxially grown silicon. Higher substrate temperatures and lower deposition rates yield larger columns that are farther apart while more silicon produces smaller columns. Column shapes and locations are selected by seeding the substrate with metal silicide starting regions. A variety of three-dimensional, exemplary electronic devices are disclosed.

Fathauer, Robert W.↗

Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

Epitaxial layers of InSb were grown on InP and GaAs substrates by molecular beam epitaxy. The dependence of the epilayer quality on flux ratio, J sub Sb4/J sub In, was studied. Deviation from an optimum value of J sub Sb4/J sub In (approx. 2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room temperature electron mobilities as high as 70,000 and 53,000 sq cm /V-s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n-type even at T = 13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110,000 sq cm/V-s (3 x 10(15) cm(-3)) and 55,000 sq cm/V-s (4.95 x 10(15) cm(-3)), respectively, suggesting their application to electronic devices at cryogenic temperatures.

Oh, J. E.↗

NASA's challenge for tomorrow

The early space probes provided our first detailed look at the planets, and demonstrated the critical role played by parts technology. The advanced orbital platform under development, the Space Station Freedom (which represents a pivotal step in the space program) contains about 5 million Electrical, Electronic and Electromechanical (EEE) parts. Thus, EEE parts continue to be crucial to mission success. The NASA EEE parts program establishes and directs policy and integration throughout the Agency. The EEE program structure, issues and solutions are described. The challenge presented by advanced electronic devices is discussed.

Barney, Daniel L.↗

Collection Of Charge By Diffusion From Ion Track

Collection of electric charge carriers from track of energetic ion through silicon electronic device studied using diffusion model representing transport of charge from ion track to sink. Effects of ionizing radiation approximated by simple equations.

Edmonds, Larry D.↗

SNS Heterojunctions With New Combinations Of Materials

New combinations of materials proposed for superconductor/normal-metal/superconductor (SNS) heterojunctions in low-temperature electronic devices such as fast switches, magnetometers, and mixers. Epitaxial heterojunctions formed between high-temperature superconductors and either oxide semiconductors or metals. Concept offers alternative to other three-layer heterojunction concepts; physical principles of operation permit SNS devices to have thicker barrier layers and fabricated more easily.

Vasquez, Richard P.↗

Load flows and faults considering dc current injections

The authors present novel methods for incorporating current injection sources into dc power flow computations and determining network fault currents when electronic devices limit fault currents. Combinations of current and voltage sources into a single network are considered in a general formulation. An example of relay coordination is presented. The present study is pertinent to the development of the Space Station Freedom electrical generation, transmission, and distribution system.

Kusic, G. L.↗

Polarized-Cathodoluminescence Study Of Stress In GaAs/Si

Report describes experiments in which linearly polarized cathodoluminesce scanning electron microscopy, in both imaging and spectroscopic forms, used to analyze spatial variations in stress tensors in specimens of GaAs/Si. Specimens fabricated by atmospheric-pressure metallo-organic chemical vapor deposition of GaAs to thickness of 4 micrometers on Si substrates. Combination of mismatch between Si and GaAs crystal lattices and differential thermal contraction of materials from deposition temperature (700 degrees C) to room temperature gives rise to stresses in GaAs layer. Experiments conducted to contribute to understanding of effects of these stresses and ramifications thereof for fabrication of electronic devices in GaAs/Si system.

Rich, Daniel H.↗

Effect Of Auger Recombination In An Ion Track

Report presents theoretical calculations of contribution of Auger recombination to depletion of charge carriers from ionization track left by passage of energetic heavy ion through silicon-based electronic device.

Edmonds, Larry D.↗

Silicon carbide semiconductor technology for high temperature and radiation environments

Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented. Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response.

Matus, Lawrence G.↗

An experimental methodology for a fuzzy set preference model

A flexible fuzzy set preference model first requires approximate methodologies for implementation. Fuzzy sets must be defined for each individual consumer using computer software, requiring a minimum of time and expertise on the part of the consumer. The amount of information needed in defining sets must also be established. The model itself must adapt fully to the subject's choice of attributes (vague or precise), attribute levels, and importance weights. The resulting individual-level model should be fully adapted to each consumer. The methodologies needed to develop this model will be equally useful in a new generation of intelligent systems which interact with ordinary consumers, controlling electronic devices through fuzzy expert systems or making recommendations based on a variety of inputs. The power of personal computers and their acceptance by consumers has yet to be fully utilized to create interactive knowledge systems that fully adapt their function to the user. Understanding individual consumer preferences is critical to the design of new products and the estimation of demand (market share) for existing products, which in turn is an input to management systems concerned with production and distribution. The question of what to make, for whom to make it and how much to make requires an understanding of the customer's preferences and the trade-offs that exist between alternatives. Conjoint analysis is a widely used methodology which de-composes an overall preference for an object into a combination of preferences for its constituent parts (attributes such as taste and price), which are combined using an appropriate combination function. Preferences are often expressed using linguistic terms which cannot be represented in conjoint models. Current models are also not implemented an individual level, making it difficult to reach meaningful conclusions about the cause of an individual's behavior from an aggregate model. The combination of complex aggregate models and vague linguistic preferences has greatly limited the usefulness and predictive validity of existing preference models. A fuzzy set preference model that uses linguistic variables and a fully interactive implementation should be able to simultaneously address these issues and substantially improve the accuracy of demand estimates. The parallel implementation of crisp and fuzzy conjoint models using identical data not only validates the fuzzy set model but also provides an opportunity to assess the impact of fuzzy set definitions and individual attribute choices implemented in the interactive methodology developed in this research. The generalized experimental tools needed for conjoint models can also be applied to many other types of intelligent systems.

Turksen, I. B.↗

Applications of diamond films and related materials; Proceedings of the 1st International Conference, Auburn, AL, Aug. 17-22, 1991

The present conference discusses the nucleation and growth of diamond from hydrocarbons, the cutting tool performance of CVD thick-film diamond, the characterization of CVD diamond grinding powder, industrial applications of crystalline diamond-coated tools, standardized SEM tribometry of diamond-coated substrates, residual stress in CVD diamond films, the optical properties of CVD diamond films, polycrystalline diamond films for optical applications, and diamond growth on ferrous metals. Also discussed are ion beam-irradiation smoothing of diamond films, electronic circuits on diamond substrates, diamond-laminated surfaces for evaporative spray cooling, electron devices based on the unique properties of diamond, diamond cold cathodes, thin-film diamond microstructure applications, Schottky diodes from flame-grown diamond, diamond films for thermionic applications, methods of diamond nucleation and selective deposition, high-rate/large-area diamond film production, halogen-assisted diamond growth, the economics of diamond technology, and the optical and mechanical properties of diamondlike films.

Tzeng, Yonhua↗

Low-Heat-Leak Electrical Leads For Cryogenic Systems

Electrical leads offering high electrical conductivity and low thermal conductivity developed for use in connecting electronic devices inside cryogenic systems to power supplies, signal-processing circuits, and other circuitry located in nearby warmer surroundings. Strip of superconductive leads on ceramic substrate, similar to ribbon cable, connects infrared detectors at temperature of liquid helium with warmer circuitry. Electrical leads bridging thermal gradient at boundary of cryogenic system designed both to minimize conduction of heat from surroundings through leads into system and to minimize resistive heating caused by electrical currents flowing in leads.

Wise, Stephanie A.↗

Fault handling schemes in electronic systems with specific application to radiation tolerance and VLSI design

Naturally occurring space radiation particles can produce transient and permanent changes in the electrical properties of electronic devices and systems. In this work, the transient radiation effects on DRAM and CMOS SRAM were considered. In addition, the effect of total ionizing dose radiation of the switching times of CMOS logic gates were investigated. Effects of transient radiation on the column and cell of MOS dynamic memory cell was simulated using SPICE. It was found that the critical charge of the bitline was higher than that of the cell. In addition, the critical charge of the combined cell-bitline was found to be dependent on the gate voltage of the access transistor. In addition, the effect of total ionizing dose radiation on the switching times of CMOS logic gate was obtained. The results of this work indicate that, the rise time of CMOS logic gates increases, while the fall time decreases with an increase in total ionizing dose radiation. Also, by increasing the size of the P-channel transistor with respect to that of the N-channel transistor, the propagation delay of CMOS logic gate can be made to decrease with, or be independent of an increase in total ionizing dose radiation. Furthermore, a method was developed for replacing polysilicon feedback resistance of SRAMs with a switched capacitor network. A switched capacitor SRAM was implemented using MOS Technology. The critical change of the switched capacitor SRAM has a very large critical charge. The results of this work indicate that switched capacitor SRAM is a viable alternative to SRAM with polysilicon feedback resistance.

Attia, John Okyere↗

Variable stiffness torsion springs

In a torsion spring the spring action is a result of the relationships between the torque applied in twisting the spring, the angle through which the torsion spring twists, and the modulus of elasticity of the spring material in shear. Torsion springs employed industrially have been strips, rods, or bars, generally termed shafts, capabable of being flexed by twisting their axes. They rely on the variations in shearing forces to furnish an internal restoring torque. In the torsion springs herein the restoring torque is external and therefore independent of the shearing modulus of elasticity of the torsion spring shaft. Also provided herein is a variable stiffness torsion spring. This torsion spring can be so adjusted as to have a given spring constant. Such variable stiffness torsion springs are extremely useful in gimballed payloads such as sensors, telescopes, and electronic devices on such platforms as a space shuttle or a space station.

Alhorn, Dean C.↗

Simulation of arthroscopic surgery using MRI data

With the availability of Magnetic Resonance Imaging (MRI) technology in the medical field and the development of powerful graphics engines in the computer world the possibility now exists for the simulation of surgery using data obtained from an actual patient. This paper describes a surgical simulation system which will allow a physician or a medical student to practice surgery on a patient without ever entering an operating room. This could substantially lower the cost of medial training by providing an alternative to the use of cadavers. This project involves the use of volume data acquired by MRI which are converted to polygonal form using a corrected marching cubes algorithm. The data are then colored and a simulation of surface response based on springy structures is performed in real time. Control for the system is obtained through the use of an attached analog-to-digital unit. A remote electronic device is described which simulates an imaginary tool having features in common with both arthroscope and laparoscope.

Heller, Geoffrey↗

Development of an expert system for power quality advisement using CLIPS 6.0

Proliferation of power electronic devices has brought in its wake both deterioration in and demand for quality power supply from the utilities. The power quality problems become apparent when the user's equipment or systems maloperate or fail. Since power quality concerns arise from a wide variety of sources and the problem fixes are better achieved from the expertise of field engineers, development of an expert system for power quality advisement seems to be a very attractive and cost-effective solution for utility applications. An expert system thus developed gives an understanding of the adverse effects of power quality related problems on the system and could help in finding remedial solutions. The paper reports the design of a power quality advisement expert system being developed using CLIPS 6.0. A brief outline of the power quality concerns is first presented. A description of the knowledge base is next given and details of actual implementation include screen output from the program.

Chandrasekaran, A.↗