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At least 289 records · Page 16

Influence of Current Annealing on the Temperature Dependences of Magnetoimpedance in Amorphous Microwires

Further miniaturization of magnetic electron devices and devices of microsystem engineering in many ways depends on the optimal choice of functional materials (media) used in working bodies, specifically, sensory elements (for example, in local magnetic field sensors, mechanical stress/strain sensors, temperature sensors, etc.). Among promising materials in this respect are ferromagnetic wires consisting of a glass-coated amorphous alloy filament. The magnetoimpedance of such filaments turns out to be highly sensitive to the above external factors: the so-called giant magnetoimpedance effect. The performance of these devices is highly temperature stable, which is important for many applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Layered Semiconductor Cr 0.32 Ga 0.68 Te 2.33 with Concurrent Broken Inversion Symmetry and Ferromagnetism: A Bulk Ferrovalley Material Candidate

The valleytronic state found in group-VI transition-metal dichalcogenides such as MoS2 has attracted immense interest since its valley degree of freedom could be used as an information carrier. However, valleytronic applications require spontaneous valley polarization. Such an electronic state is predicted to be accessible in a new ferroic family of materials, i.e., ferrovalley materials, which features the coexistence of spontaneous spin and valley polarization. Although many atomic monolayer materials with hexagonal lattices have been predicted to be ferrovalley materials, no bulk ferrovalley material candidates have been reported or proposed. Here, in this work, we show that a new non-centrosymmetric van der Waals (vdW) semiconductor Cr 0.32 Ga 0.68 Te 2.33 , with intrinsic ferromagnetism, is a possible candidate for bulk ferrovalley material. This material exhibits several remarkable characteristics: (i) it forms a natural heterostructure between vdW gaps, a quasi-two-dimensional (2D) semiconducting Te layer with a honeycomb lattice stacked on the 2D ferromagnetic slab comprised of the (Cr, Ga)-Te layers, and (ii) the 2D Te honeycomb lattice yields a valley-like electronic structure near the Fermi level, which, in combination with inversion symmetry breaking, ferromagnetism, and strong spin-orbit coupling contributed by heavy Te element, creates a possible bulk spin-valley locked electronic state with valley polarization as suggested by our DFT calculations. Further, this material can also be easily exfoliated to 2D atomically thin layers. Therefore, this material offers a unique platform to explore the physics of valleytronic states with spontaneous spin and valley polarization in both bulk and 2D atomic crystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Equiatomic quaternary Heusler alloys: A material perspective for spintronic applications

Half-metallic ferromagnetic (HMF) materials show high spin polarization and are therefore interesting to researchers due to their possible applications in spintronic devices. In these materials, while one spin sub band has a finite density of states at the Fermi level, the other sub band has a gap. Because of their high Curie temperature (T{sub C}) and tunable electronic structure, HMF Heusler alloys have a special importance among the HMF materials. Full Heusler alloys with the stoichiometric composition X{sub 2}YZ (where X and Y are the transition metals and Z is a sp element) have the cubic L2{sub 1} structure with four interpenetrating fcc sublattices. When each of these four fcc sublattices is occupied by different atoms (XX′YZ), a quaternary Heusler structure with different structural symmetries (space group F-43m, #216) is obtained. Recently, these equiatomic quaternary Heusler alloys (EQHAs) with 1:1:1:1 stoichiometry have attracted a lot of attention due to their superior magnetic and transport properties. A special class of HMF materials identified recently is known as spin gapless semiconductors (SGS). The difference in this case, compared with HMFs, is that the density of states for one spin band is just zero at the Fermi level, while the other has a gap as in the case of HMFs. Some of the reported SGS materials belong to EQHAs family. This review is dedicated to almost all reported materials belonging to EQHAs family. The electronic structure and hence the physical properties of Heusler alloys strongly depend on the degree of structural order and distribution of the atoms in the crystal lattice. A variety of experimental techniques has been used to probe the structural parameters and degree of order in these alloys. Their magnetic properties have been investigated using the conventional methods, while the spin polarization has been probed by point contact Andreev reflection technique. The experimentally obtained values of saturation magnetization are found to be in agreement with those estimated using the Slater-Pauling rule in most of the cases. Electrical resistivity and Hall measurements are being used to distinguish between SGS and HMF nature in detail. The current spin polarization value, P = 0.70 ± 0.01, for CoFeMnGe is found to be highest among the EQHAs. CoFeMnSi and CoFeCrGa are found to show SGS behavior with high Curie temperatures, thus making them suitable substitutes for diluted magnetic semiconductors. CoRuFeSi is found to have the highest T{sub C} among EQHAs. Theoretical prediction of magnetic properties on the basis of electronic structure calculations has also been reported in a few systems, which are also discussed in this review. Thus, this review presents a consolidated picture of the magnetic and spintronic properties of this important, but relatively new class of Heusler alloys. It is expected that this will stimulate further interest in these alloys, thereby paving the way for the identification of more HMF and SGS materials. As a result of this, it is expected that more efficient spintronic devices using these alloys would emerge in the near future.

36 MATERIALS SCIENCE↗

Interface-driven spin-torque ferromagnetic resonance by Rashba coupling at the interface between nonmagnetic materials

The Rashba-Edelstein effect stems from the interaction between the electron's spin and its momentum induced by spin-orbit interaction at an interface or a surface. It was shown that the inverse Rashba-Edelstein effect can be used to convert a spin current into a charge current. Here, we demonstrate the reverse process of a charge-to spin-current conversion at a Bi/Ag Rashba interface. We show that this interface-driven spin current can drive an adjacent ferromagnet to resonance. We employ a spin-torque ferromagnetic resonance excitation/detection scheme which was developed originally for a bulk spin-orbital effect, the spin Hall effect. In our experiment, the direct Rashba-Edelstein effect generates an oscillating spin current from an alternating charge current driving the magnetization precession in a neighboring permalloy (Py, Ni 80 Fe 20 ) layer. As a result, electrical detection of the magnetization dynamics is achieved by a rectificationmechanism of the time dependent multilayer resistance arising from the anisotropic magnetoresistance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Low-Temperature Magnetic Properties of Vanadium-Doped ZnO Nanoparticles

Low-temperature magnetic study of transition metal-doped ZnO nanoparticles tends to spring ambiguities of magnetic phases due to defect states, environment of doped ions, and anisotropy. Interestingly, vanadium doping in ZnO brings out versatile magnetic ordering which offers more room for basic understanding of the underlying mechanism. Vanadium-doped ZnO nanoparticles are prepared using a simple cost-effective approach of solution combustion method. Macroscopic and microscopic aspects of the samples have been unraveled using structural and morphological studies with the implications on the exhibited magnetic behavior. Development of antiferromagnetic, ferromagnetic, and ferrimagnetic interactions in the material illustrated by low-temperature magnetic measurements preludes the possible interplay of dopant-initiated defect correlation and morphological and interfacial secondary phases. The grain boundary reformation due to vanadium in the ZnO nanograins is exploited through a systematic correlation of structural and morphological studies in order to gain more insight into the portrayed magnetic signatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Influence of Ga-concentration on the electrical and magnetic properties of magnetoelectric CoGa x Fe 2–x O 4 /BaTiO 3 composite

Multiferroic materials exhibit magnetoelectric (ME) coupling and promise new device applications including magnetic sensors, generators, and filters. An effective method for developing ME materials with enhanced ME effect is achieved by the coupling through the interfacial strain between piezoelectric and magnetostrictive materials. In this study, the electrical and magnetic properties of Ga doped magnetoelectric CoGa x Fe 2–x O 4 /BaTiO 3 composite are studied systematically. It is found that Ga doping improves the sensitivity of magnetoelastic response and stabilizes the magnetic phase of the composites. More importantly, Ga doping reduces the electrical conductivity of composite, as well as the dielectric loss. An enhancement of the electrostrain with doping Ga is also observed. Quantitative estimation indicates that magnetoelectric coupling is enhanced for Ga-doped CoGa x Fe 2–x O 4 /BaTiO 3 composites. As a result, the present work is beneficial to the practical application of composite CoFe 2 O 4 /BaTiO 3 -based multiferroic materials.

36 MATERIALS SCIENCE↗

Effect of heavy metal layer thickness on spin-orbit torque and current-induced switching in Hf|CoFeB|MgO structures

We study the heavy metal layer thickness dependence of the current-induced spin-orbit torque (SOT) in perpendicularly magnetized Hf|CoFeB|MgO multilayer structures. The damping-like (DL) current-induced SOT is determined by vector anomalous Hall effect measurements. A non-monotonic behavior in the DL-SOT is found as a function of the thickness of the heavy-metal layer. The sign of the DL-SOT changes with increasing the thickness of the Hf layer in the trilayer structure. As a result, in the current-driven magnetization switching, the preferred direction of switching for a given current direction changes when the Hf thickness is increased above ∼7 nm. Although there might be a couple of reasons for this unexpected behavior in DL-SOT, such as the roughness in the interfaces and/or impurity based electric potential in the heavy metal, one can deduce a roughness dependence sign reversal in DL-SOT in our trilayer structure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Significant enhancement in structural, dielectric, piezoelectric and ferromagnetic properties of Ba0.9Sr0.1Zr0.1Ti0.9O3-CoFe2O4 multiferroic composites

Highlights: • (1-x)Ba{sub 0.9}Sr{sub 0.1}Zr{sub 0.1}Ti{sub 0.9}O{sub 3}-(x)CoFe{sub 2}O{sub 4} multiferroic composite has been synthesized using mechano-chemical activation technique. • An improvement in dielectric, ferroelectric and piezoelectric properties over the pristine BSZT sample has been observed. • The composite samples also show a substantial enhancement in ferromagnetic characteristics compare to bare BSZT sample. - Abstract: Multiferroic composites (1 − x)Ba{sub 0.9}Sr{sub 0.1}Zr{sub 0.1}Ti{sub 0.9}O{sub 3}-(x)CoFe{sub 2}O{sub 4} (x = 0.0, 0.05, 0.10, 0.20 & 0.30) were prepared using mechanochemical activation method. Rietveld refined XRD patterns confirm the diphasic nature of composite samples. All of the diffraction peaks of (1 − x)BSZT-(x)CFO can be identified for the separate perovskite (BSZT) and inverse spinal (CFO) phases and no other impurity phase were observed for the composites. (1 − x)BSZT-(x)CFO sample with x = 0.05 have shown significant improvement in microstructural, dielectric, ferroelectric and piezoelectric properties over the pristine BSZT sample. Such an improvement in electrical properties can be attributed to larger grain size, improved density and easier ferroelectric domain wall motion inside the grain. Dielectric breakdown strength of the composites also shows a similar trend and is observed to be maximum for the sample with x = 0.05 CFO concentration. The composite samples also show a substantial enhancement in ferromagnetic characteristics and increases progressively with increase in ferrite (CFO) content.

36 MATERIALS SCIENCE↗

Magnetic coercivity and ferromagnetic species in lunar materials

Lunar samples have reduced coercive force, high values of R sub H (ratio of remanent coercive force to coercive force), and constriction in their magnetic hysteresis loops due to the presence of superparamagnetic and multidomain iron grains. The high R sub H values are also attributable to the magnetic shape effects of the iron grains. Spheres, cubes, and needles, as well as more irregular metal grains were observed. The coercive force values are quite meaningless unless the size and shape distributions are determined. The R sub H and the ratio of saturation remanence to saturation magnetization values can be considered characteristic of the size and shape modes of the ferromagnetic grains in a natural sample, and a classification of natural materials based on their hysteresis characteristics is presented with special reference to lunar samples.

Wasilewski, P.↗

Absence of strain-mediated magnetoelectric coupling at fully epitaxial Fe/BaTiO{sub 3} interface (invited)

Interfacial MagnetoElectric coupling (MEC) at ferroelectric/ferromagnetic interfaces has recently emerged as a promising route to achieve electrical writing of magnetic information in spintronic devices. For the prototypical Fe/BaTiO{sub 3} (BTO) system, various MEC mechanisms have been theoretically predicted. Experimentally, it is well established that using BTO single crystal substrates MEC is dominated by strain-mediated mechanisms. In case of ferromagnetic layers epitaxially grown onto BTO films, instead, no direct evidence for MEC has been provided, apart from the results obtained on tunneling junction sandwiching a BTO tunneling barrier. In this paper, MEC at fully epitaxial Fe/BTO interface is investigated by Magneto-Optical Kerr Effect and magnetoresistance measurements on magnetic tunnel junctions fabricated on BTO. We find no evidence for strain-mediated MEC mechanisms in epitaxial systems, likely due to clamping of BTO to the substrate. Our results indicate that pure electronic MEC is the route of choice to be explored for achieving the electrical writing of information in epitaxial ferromagnet-ferroelectric heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Interferometric properties of standing spin waves and the application to a phase comparator

We numerically studied the material and structural parameter dependence of interferometric properties of the standing spin wave resonance (SSWR) by micromagnetic simulations and demonstrate the feasibility of practical application to an integrated phase comparator. The micromagnetic configuration of the synthesized SSWR emitted from the two microwave currents flowing through the parallel strip lines depends on the phase difference Δϕ between them. Resultantly, the Δϕ is converted to the related output voltage with an overlaid phase detector, inductively coupled to the magnetic strip. Among the investigated various material systems, low damping (α ∼ 0.001) metallic ferromagnets are found to exhibit superior device performance due to the reduced viscous dissipation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Molecular Beam Epitaxy of Materials Interfaces with Atomic Precision

In this contribution a few selected examples to engineer material interfaces in nanostructured solids with atomic precision by means of molecular beam epitaxy (MBE) are presented. The examples include 2D electron gas systems for quantum transport and mesoscopic physics, quantum cascade lasers, Sb-based materials, ferromagnet-semiconductor heterostructures, as well as oxide materials for electronics and quantum physics. Finally, the prospects to fabricate novel van-der-Waals heterostructures are briefly discussed.

36 MATERIALS SCIENCE↗

Is spin transport through molecules really occurring in organic spin valves? A combined magnetoresistance and inelastic electron tunnelling spectroscopy study

Molecular and organic spintronics is an emerging research field which combines the versatility of chemistry with the non-volatility of spintronics. Organic materials have already proved their potential as tunnel barriers (TBs) or spacers in spintronics devices showing sizable spin valve like magnetoresistance effects. In the last years, a large effort has been focused on the optimization of these organic spintronics devices. Insertion of a thin inorganic tunnel barrier (Al{sub 2}O{sub 3} or MgO) at the bottom ferromagnetic metal (FM)/organic interface seems to improve the spin transport efficiency. However, during the top FM electrode deposition, metal atoms are prone to diffuse through the organic layer and potentially short-circuit it. This may lead to the formation of a working but undesired FM/TB/FM magnetic tunnel junction where the organic plays no role. Indeed, establishing a protocol to demonstrate the effective spin dependent transport through the organic layer remains a key issue. Here, we focus on Co/Al{sub 2}O{sub 3}/Alq{sub 3}/Co junctions and show that combining magnetoresistance and inelastic electron tunnelling spectroscopy measurements one can sort out working “organic” and short-circuited junctions fabricated on the same wafer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Exotic exchange bias at epitaxial ferroelectric-ferromagnetic interfaces

Multiferroics in spintronics have opened up opportunities for future technological developments, particularly in the field of ferroelectric (FE)-ferromagnetic (FM) oxide interfaces with functionalities. We find strong exchange bias shifts (up to 84 Oe) upon field cooling in metal-oxide (Fe/BaTiO{sub 3}) films combining FM and FE layers. The saturation magnetic moment of the FM layer is also significantly higher than in bulk (3.0 ± 0.2 μ{sub B}/atom) and the reversal mechanism occurs via a domain nucleation process. X-ray absorption spectroscopy at the Fe K-edge and Ba L3-edge indicate presence of few monolayers of antiferromagnetic FeO at the interface without the formation of any BaFeO{sub 3} layer. Polarized neutron reflectometry corroborates with our magnetization data as we perform depth profiling of the magnetic and structural densities in these bilayers. Our first principles density functional calculations support the formation of antiferromagnetic FeO layers at the interface along with an enhancement of Fe magnetic moments in the inner ferromagnetic layers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A FirstPrinciple Study on the Magnetic Properties of Ag, Al, Li, Mg, and NaDoped ReS{sub 2} Monolayers

Magnetic properties of ReS{sub 2} monolayer doped with nonmagnetic metals (Ag, Al, Li, Mg, and Na) are studied by the first-principle method Different dopants and doping sites are considered. Similar to transition metal (TM) atoms, magnetic behavior appears in Al and Mg-doped systems. On the other hand, the calculated binding energies show that the Al-doped system has a more stable-formed system than the Mg-doped system. Hence, we study the ferromagnetic interaction in two Al-doped ReS{sub 2} monolayers. Interestingly, as the Al–Al distance increases, both ferromagnetic (FM) and nonmagnetic (NM) states are found. Our results deem that the FM coupling originates from a p-d exchange-like p-p coupling interaction.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetoelectric coupling and spin-dependent tunneling in Fe/PbTiO{sub 3}/Fe multiferroic heterostructure with a Ni monolayer inserted at one interface

We report on first-principles calculations of a Ni monolayer inserted at one interface in the epitaxial Fe/PbTiO{sub 3}/Fe multiferroic heterostructure, focusing on the magnetoelectric coupling and the spin-dependent transport properties. The results of magnetoelectric coupling calculations reveal an attractive approach to realize cumulative magnetoelectric effects in the ferromagnetic/ferroelectric/ferromagnetic superlattices. The underlying physics is attributed to the combinations of several different magnetoelectric coupling mechanisms such as interface bonding, spin-dependent screening, and different types of magnetic interactions. We also demonstrate that inserting a Ni monolayer at one interface in the Fe/PbTiO{sub 3}/Fe multiferroic tunnel junction is an efficient method to produce considerable tunneling electroresistance effect by modifying the tunnel potential barrier and the interfacial electronic structure. Furthermore, coexistence of tunneling magnetoresistance and tunneling electroresistance leads to the emergence of four distinct resistance states, which can be served as a multistate-storage device. The complicated influencing factors including bulk properties of the ferromagnetic electrodes, decay rates of the evanescent states in the tunnel barrier, and the specific interfacial electronic structure provide us promising opportunities to design novel multiferroic tunnel junctions with excellent performances.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Structural and magnetic properties of Y-doped La{sub 0.5}Sr{sub 0.5}MnO{sub 3} manganite system: Evidence of step-like magnetization

The magnetic and transport properties of bulk doped manganite, La{sub 0.5−y}Y{sub y}Sr{sub 0.5}MnO{sub 3} have been studied as a function of yttrium doping, y, for 0 ≤ y ≤ 0.25. In the absence of the yttrium this is a well studied half-doped manganite which is a metallic ferromagnet. The end members of this system (with y = 0 and 0.25) are found to be structurally different (rhombohedral and orthorhombic, respectively) due to the large distortions caused by the yttrium. These distortions make this series of compounds particularly interesting. The magnetization obtained in zero field cooled (ZFC) and field cooled (FC) studies show dramatic changes as the value of y is raised above 0.05. The magnetic behavior is further investigated by a study of the hysteresis loops, frequency dependent susceptibility and studies of the magnetic relaxation. The results are understood in terms of the average size of the cation on the A site, , and the variance, σ{sup 2} (= ∑y{sub i}{sup 2}r{sub i}{sup 2} - {sup 2}). The value of the variance, σ{sup 2}, increases rapidly with doping, y, induces melting of the long range ferromagnetic ordering, exhibiting a stepwise variation of magnetization (metamagnetic like). Based on the present results a magnetic phase diagram has been drawn demonstrating different magnetic phase sequences with the variation of σ{sup 2}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Computational Research of Electronic and Magnetic Properties of Nonmetal Doping of Graphene-Like ZnO Monolayer

In this paper, the geometrical, electronic, and magnetic properties of nonmetal (B, C, N, F, Si, P, or S) atom doping of g-ZnO monolayer supercell have been comprehensively calculated using the first-principle method. The structural optimization implies that nonmetal atom doping of g-ZnO monolayer leads to the structural distortion around the doping atoms compared with pure g-ZnO sheet. We find that g-ZnO monolayer with one O atom per supercell substituted by one B or C atom is ferromagnetic half metal, and that substituted by one N, Si, or P atom exhibits a ferromagnetic semiconductor feature, while that substituted by one F or S atom appears to be nonmagnetic semiconductor. The total magnetic moments mainly originates from the spin polarization of the doping atom (B, C, N, Si, and P), and the rest comes from the nearest Zn and O atoms.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗