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Annealing experiments in the temperature range 1100-1275 C have been performed on p-type Si(0.8)Ge(0.2) samples with BP, B(6.5)P, and GaSb material additives. Both electrical resistivity and Seebeck coefficient generally decrease for these samples as annealing temperature is increased, with thermoelectric power factor sometimes being improved by annealing.
Highly compensated Ge:Ga photoconductors for high bandwidth heterodyne detection have been fabricated and evaluated. Bandwidths up to 60 MHz have been achieved with a corresponding current responsivity of 0.01 A/W. The expected dependence of bandwidth on bias field is obtained. It is noted that increased bandwidth is obtained at the price of greater required local oscillator power.
To fill in gaps in the present Ge database, mare basalts were analyzed for Ge and other elements by RNAA and INAA. Mare basalts from Apollo 11, 12, 15, and 17 landing sites are rather uniform in Ge abundance, but Apollo 14 aluminous mare basalts and KREEP are enriched in Ge by factors of up to 300 compared to typical mare basalts. These Ge enrichments are not associated with other siderophile element enrichments and thus are not due to differences in the amount of metal segregated during core formation. Based on crystal-chemical and interelement variations, it does not appear that the observed Ge enrichments are due to silicate liquid immiscibility. KREEP basalt source regions may have been metasomatized, and Apollo 14 aluminous mare basalt magmas may have become enriched in Ge by interacting with these metasomatized areas. The presence of volatile- and Ge-rich regions in the moon suggest that the moon was never totally molten.
Transitions of the type n = 2-2, n = 2-3 and n = 3-4 in Li-like Ge(29+) have been observed in the spectrum from a laser-produced plasma. The energy levels and ionization energy of Ge(29+) were derived from the observed wavelengths. The wavelength of the 2s 2S1/2-2p 2P3/2 transition is sufficiently accurate to determine the quantum-electrodynamic contribution to the transition energy.
The thermoelectric conversion efficiency of a GaP doped SiGe alloy is improved about 30 percent by annealing the alloy at a temperature above the melting point of the alloy, preferably stepwise from 1200 C to 1275 C in air to form large grains having a size over 50 microns and to form a GeGaP rich phase and a silicon rich phase containing SiP and SiO2 particles.
Information is given in viewgraph form. The advantages of the Si blocked impurity band (BIB) detector invented by M. D. Petroff and M. G. Stabelbroek are noted: smaller detection volume leading to a reduction of cosmic ray interference, extended wavelength response because of dopant wavefunction overlap, and photoconductive gain of unity. It is argued that the stated advantages of Si BIB detectors should be realizable for Ge BIB detectors. Information is given on detector development, subtrate choice and preparation, wafer polising, epitaxy, characterization of epi layers, and preliminary Ge BIB detector test results.
Gamma-ray background spectra, obtained in the energy range from 45 keV to 10 MeV with the cooled high-resolution Ge spectrometer on the HEAO-3 satellite over a 50-day period in 1979-1980 are reported and analyzed. The instrument design and performance characteristics are reviewed; the data-analysis procedures are outlined; about 130 background lines are listed in a table with energies, count rates, and tentative identifications; and the spectra are presented graphically and discussed in detail.
It is shown that heavy doping of n-type Si/Ge alloys with phosphorus and arsenic (V-V doping interaction) by diffusion leads to a significant enhancement of their carrier concentration and possible improvement of the thermoelectric figure of merit. High carrier concentrations were achieved by arsenic doping alone, but for a same doping level higher carrier mobilities and lower resistivities are obtained through phosphorus doping. By combining the two dopants with the proper diffusion treatments, it was possible to optimize the different properties, obtaining high carrier concentration, good carrier mobility and low electrical resistivity. Similar experiments, using the III-V doping interaction, were conducted on boron-doped p-type samples and showed the possibility of overcompensating the samples by diffusing arsenic, in order to get n-type behavior.
A pulse-shape discrimination (PSD) technique is developed to reject the beta-decay background resulting from activation of Ge gamma-ray detectors by cosmic-ray secondaries. These beta decays are a major source of background at 0.2-2 MeV energies in well shielded Ge detector systems. The technique exploits the difference between the detected current pulse shapes of single- and multiple-site energy depositions within the detector: beta decays are primarily single-site events, while photons at these energies typically Compton scatter before being photoelectrically absorbed to produce multiple-site events. Depending upon the amount of background due to sources other than beta decay, PSD can more than double the detector sensitivity.
Crystal-melt interface shapes of 100 to 200 mm diameter 111-line Ge grown by the Czochralski technique have been examined using the method of fast withdrawal from the melt. Initially, the interface shape is convex, then transforms gradually into a sigmoidal shape, becomes nearly planar at about one third of the final crystal length, and finally assumes a concave profile with progressively increasing curvature. The nearly planar interface has a double-facet structure, with an annular facet at the edge of the crystal in addition to the central (111) facet. Formation of the annular facet is accompanied by a giant oscillation of the pull rate when the maximum average pull rate is exceeded. Such oscillation is detrimental to crystal quality, since it introduces a region of high dislocation density. An average pull rate maximum of 2 cm/h has been found to allow for a smooth growth of 200 mm diameter crystals. The origin of the pull rate perturbation is discussed in terms of an instantaneous change in the equilibrium shape of the meniscus.
An analysis of weak (less than 10 mA) UV interstellar absorption line data obtained for the line of sight to the O9.5 IV star Zeta Oph is presented. Measurements of weak semiforbidden lines of N I, O I, Cu II, and a new UV detection of Na I are reported along with a small upper limit for C II. Interstellar detections of Ga II, Ge II, and Kr I are also presented. Ga, Ge, and Kr represent the heaviest elements detected in the ISM. A comparison of the derived column densities to cosmic abundances shows Ga to be depleted by about -1.2 dex while Ge is overabundant by +0.2 dex. Assuming Kr to be undepleted, a logarithmic cosmic abundance of Kr/H = 2.95 is obtained on the scale where H = 12.00.
Two areas that are related to planetary gamma-ray spectrometry are investigated. The first task was the investigation of gamma rays produced by high-energy charged particles and their secondaries in planetary surfaces by means of thick target bombardments. The second task was the investigation of the effects of high-energy neutrons on gamma-ray spectral features obtained with high-purity Ge-detectors. For both tasks, as a function of the funding level, the experimental work was predominantly tied to that of other researchers, whenever there was an opportunity to participate in bombardment experiments at large or small accelerators for charged particles.
We have fabricated and characterized six-element monolithic arrays of Ge:Ga blocked-impurity-band detectors, with threshold wavelength 220 microns, peak quantum efficiency 14 percent, detective quantum efficiency 9 percent, dark current 300 e(-)/s, and response uniformity better than 4 percent. The devices are described very well by the standard model of blocked-impurity-band detectors and appear to satisfy many of the requirements of low-background astronomical instruments.
Some fraction of Zn, Cu, Se, Ga and Ge in chondritic interplanetary dust particles (IDPs) collected in the lower stratosphere between 1981 May and 1984 June has a volcanic origin. I present a method to evaluate the extent of this unavoidable type of stratospheric contamination for individual particles. The mass-normalized abundances for Cu and Ge as a function of mass-normalized stratospheric residence time show their time-integrated stratospheric aerosol abundances. The Zn, Se and Ga abundances show a subdivision into two groups that span approximately two-year periods following the eruptions of the Mount St. Helens (1980 May) and El Chichon (1982 April) volcanoes. Elemental abundances in particles collected at the end of each two-year period indicate low, but not necessarily ambient, volcanic stratospheric abundances. Using this time-integrated baseline, I calculate the straospheric contaminant fractions in nine IDPs and show that Zn, SE and Ga abundances in chondritic IDPs derive in part from stratospheric aerosol contaminants. Post-entry elemental abundances (i.e., the amount that survived atmospheric entry heating of the IDP) show enrichments relative to the CI abundances but in a smaller number of particles than previously suggested.
Some Ge:Ga and Ge:Sb photoconductor materials and detectors that are currently under development are reported. The best Ge:Ga devices exhibit dark currents of lower than 200 electrons/s, with a concurrent responsivity of 2 A/W and a detective quantum efficiency (DQE) of 5 percent. For higher backgrounds, an operating temperature of 3 K can be used. This increases the DQE to 7 percent and the responsivity to 4.5 A/W. Investigations were initiated into n-type Ge:Sb as an alternative photoconductive material. Two crystals of Ge:Sb were grown and a number of test detectors were fabricated and evaluated. At 2 K, the best device produced dark currents of less than 100 electrons/s with concurrent responsivity of 1 A/W and DQE of 4 percent, and at 3 K, produced currents of 10(exp 5) electrons/s with a DQE of 7 percent and a responsivity of 4 A/W. Using p-type Ge:Ga crystals, two dimensional monolithic photoconductor arrays are being constructed. Future work will focus on measuring pixel-to-pixel homogeneity, cross talk issues, overall sensitivity and suitability for photometric instruments.
Pulse Shape Discrimination (PSD) for background reduction will be used in the INTErnational Gamma Ray Astrophysics Laboratory (INTEGRAL) imaging spectrometer (SPI) to improve the sensitivity from 200 keV to 2 MeV. The observation of significant astrophysical gamma ray lines in this energy range is expected, where the dominant component of the background is the beta(sup -) decay in the Ge detectors due to the activation of Ge nuclei by cosmic rays. The sensitivity of the SPI will be improved by rejecting beta(sup -) decay events while retaining photon events. The PSD technique will distinguish between single and multiple site events. Simulation results of PSD for INTEGRAL-type Ge detectors using a numerical model for pulse shape generation are presented. The model was shown to agree with the experimental results for a narrow inner bore closed end cylindrical detector. Using PSD, a sensitivity improvement factor of the order of 2.4 at 0.8 MeV is expected.
It is well established that crystals grown without contact with a container have far superior quality to otherwise similar crystals grown in direct contact with a container. In addition to float-zone processing, detached-Bridgman growth is often cited as a promising tool to improve crystal quality, without the limitations of float zoning. Detached growth has been found to occur quite often during microgravity experiments and considerable improvements of crystal quality have been reported for those cases. However, no thorough understanding of the process or quantitative assessment of the quality improvements exists so far. This project will determine the means to reproducibly grow Ge-Si alloys in the detached mode. Specific objectives include: (1) measurement of the relevant material parameters such as contact angle, growth angle, surface tension, and wetting behavior of the GeSi-melt on potential crucible materials; (2) determination of the mechanism of detached growth including the role of convection; (3) quantitative determination of the differences of defects and impurities among normal Bridgman, detached Bridgman, and floating zone (FZ) growth; (4) investigation of the influence of defined azimuthal or meridional flow due to rotating magnetic fields on the characteristics of detached growth; (5) control time-dependent Marangoni convection in the case of FZ-growth by the use of a rotating magnetic field to examine the influence on the curvature of the solid-liquid interface and the heat and mass transport; and (6) grow high quality GeSi-single crystals with Si-concentration up to 10 at% and diameters up to 20 mm.
This research has shown that epilayers with residual impurity concentrations of 5 x 10(sup 13) cm(exp -3) can be grown by producing the purest Pb available in the world. These epilayers have extremely low minority acceptor concentrations, which is ideal for fabrication of IR absorbing layers. The Pb LPE growth of Ge also has the advantageous property of gettering Cu from the epilayer and the substrate. Epilayers have been grown with intentional Sb doping for IR absorption on lightly doped substrates. This research has proven that properly working Ge BIB detectors can be fabricated from the liquid phase as long as pure enough solvents are available. The detectors have responded at reach minimum wavenumbers. Optimization of the Sb doping concentration should further decrease the photoionization energy of these detectors. Ge BIB detectors have been fabricated that respond to 60 cm(exp -1) with low responsivity. Through reduction of the minority residual impurities, detector performance has reached responsivities of 1 A/W. These detectors have exhibited quantum efficiency and NEP values that rival conventional photoconductors and are expected to provide a much more sensitive tool for new scientific discoveries in a number of fields, including solid state studies, astronomy, and cosmology.