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Results for “High Voltage Insulation”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

NASA charging analyzer program: A computer tool that can evaluate electrostatic contamination

A computer code, the NASA Charging Analyzer Program (NASCAP), was developed to study the surface charging of bodies subjected to geomagnetic substorm conditions. This program will treat the material properties of a surface in a self-consistent manner and calculate the electric fields in space due to the surface charge. Trajectories of charged particles in this electric field can be computed to determine if these particles enhance surface contamination. A preliminary model of the Spacecraft Charging At The High Altitudes (SCATHA) satellite was developed in the NASCAP code and subjected to a geomagnetic substorm environment to investigate the possibility of electrostatic contamination. The results indicate that differential voltages will exist between the spacecraft ground surfaces and the insulator surfaces. The electric fields from this differential charging can enhance the contamination of spacecraft surfaces.

Stevens, N. J.↗
NASA NTRS2007

Capacitors Would Help Protect Against Hypervelocity Impacts

A proposal investigates alternatives to the present bumper method of protecting spacecraft against impacts of meteoroids and orbital debris. The proposed method is based on a British high-voltage-capacitance technique for protecting armored vehicles against shaped-charge warheads. A shield, according to the proposal, would include a bare metal outer layer separated by a gap from an inner metal layer covered with an electrically insulating material. The metal layers would constitute electrodes of a capacitor. A bias potential would be applied between the metal layers. A particle impinging at hypervelocity on the outer metal layer would break apart into a debris cloud that would penetrate the electrical insulation on the inner metal layer. The cloud would form a path along which electric current could flow between the metal layers, thereby causing the capacitor to discharge. With proper design, the discharge current would be large enough to vaporize the particles in the debris cloud to prevent penetration of the spacecraft. The shield design can be mass optimized to be competitive with existing bumper designs. Parametric studies were proposed to determine optimum correction between bias voltage, impacting particle velocity, gap space, and insulating material required to prevent spacecraft penetration.

Edwards, David↗
DOE OSTI2021

Imaging of Electrothermal Filament Formation in a Mott Insulator

Resistive switching—the current- and voltage-induced change of electrical resistance—is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching in a Mott insulator, which undergoes a thermally driven metal-to-insulator transition. Two distinct switching mechanisms are reported for such a system: electric-field-driven resistive switching and electrothermal resistive switching. The latter results from an instability caused by Joule heating. Here, we present the visualization of the reversible resistive switching in a planar V 2 O 3 thin-film device using high-resolution wide-field microscopy in combination with electric transport measurements. We investigate the interaction of the electrothermal instability with the strain-induced spontaneous phase separation in the V 2 O 3 thin film at the Mott transition. The photomicrographs show the formation of a narrow metallic filament with a minimum width ≲500 nm. Although the filament formation and the overall shape of the current-voltage characteristics (IVCs) are typical of an electrothermal breakdown, we also observe atypical effects such as oblique filaments, filament splitting, and hysteretic IVCs with sawtoothlike jumps at high currents in the low-resistance regime. We are able to reproduce the experimental results in a numerical model based on a two-dimensional resistor network. This model demonstrates that resistive switching in this case is indeed electrothermal and that the intrinsic heterogeneity is responsible for the atypical effects. This heterogeneity is strongly influenced by strain, thereby establishing a link between switching dynamics and structural properties.

42 ENGINEERING↗
NASA NTRS1995

Effects of thermal and electrical stressing on the breakdown behavior of space wiring

Several failures in the electrical wiring systems of many aircraft and space vehicles have been attributed to arc tracking and damaged insulation. In some instances, these failures proved to be very costly as they have led to the loss of many aircraft and imperilment of space missions. Efforts are currently underway to develop lightweight, reliable, and arc track resistant wiring for aerospace applications. In this work, six wiring constructions were evaluated in terms of their breakdown behavior as a function of temperature. These hybrid constructions employed insulation consisting of Kapton, Teflon, and cross-linked Tefzel. The properties investigated included the 400 Hz AC dielectric strength at ambient and 200 C, and the lifetime at high temperature with an applied bias of 40, 60, and 80% of breakdown voltage level. The results obtained are discussed, and conclusions are made concerning the suitability of the wiring constructions investigated for aerospace applications.

Hammoud, Ahmad↗
DOE OSTI2021

Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties

Abstract Unabated, worldwide trends in CO 2 production project growth to > 43-BMT per year over the next two decades. Efficient power electronics are crucial to fully realizing the CO 2 mitigating benefits of a worldwide smart grid (~ 18% reduction for the United States alone). Even state-of-the-art SiC high voltage junction devices are inefficient because of slow transition times (~ 0.5-μs) and limited switching rates at high voltage (~ 20-kHz at ≥ 15-kV) resulting from the intrinsically limited charge carrier drift speed (< 2 × 10 7 -cm-s −1 ). Slow transition times and limited switch rates waste energy through transition loss and hysteresis loss in external magnetic components. Bulk conduction devices, where carriers are generated and controlled nearly simultaneously throughout the device volume, minimize this loss. Such devices are possible using below bandgap excitation of semi-insulating (SI) SiC single crystals. We explored carrier dynamics with a 75-fs single wavelength pump/supercontinuum probe and a modified transient spectroscopy technique and also demonstrated a new class of efficient, high-speed, high-gain, bi-directional, optically-controlled transistor-like power device. At a performance level six times that of existing devices, for the first time we demonstrated prototype operation at multi-10s of kW and 20-kV, 125-kHz in a bulk conduction transistor-like device using direct photon-carrier excitation with below bandgap light.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Encapsulating High–Temperature Superconducting Twisted van der Waals Heterostructures Blocks Detrimental Effects of Disorder

High-temperature cuprate superconductors based van der Waals (vdW) heterostructures hold high technological promise. One of the obstacles hindering their progress is the detrimental effect of disorder on the properties of the vdW-devices-based Josephson junctions (JJs). Here, a new method of fabricating twisted vdW heterostructures made of Bi 2 Sr 2 CuCa 2 O 8+δ , crucially improving the JJ characteristics and pushing them up to those of the intrinsic JJs in bulk samples, is reported. The method combines cryogenic stacking using a solvent-free stencil mask technique and covering the interface by insulating hexagonal boron nitride crystals. Despite the high-vacuum condition down to 10 –6 mbar in the evaporation chamber, the interface appears to be protected from water molecules during the in situ metal deposition only when fully encapsulated. Comparing the current-voltage curves of encapsulated and unencapsulated interfaces, it is revealed that the encapsulated interfaces' characteristics are crucially improved, so that the corresponding JJs demonstrate high critical currents and sharpness of the superconducting transition comparable to those of the intrinsic JJs. Finally, it is shown that the encapsulated heterostructures are more stable over time.

2D materials↗
DOE OSTI2024

1 kV 150 A Bidirectional Isolated DC/DC Converter With Full Range ZVS For Charger Application

This paper focusses on the development of a bidirectional DC/DC converter based on dual active bridge (DAB) converter for 1 kV class fast charger applications. A novel modulation technique is proposed to achieve zero voltage switching across the entire operating range of a vehicle battery system. The topology includes a tap changer to support multiple class of vehicles. The full range ZVS operation will allow high efficiency operation even at light load, reduced dv/dt to improve transformer insulation lifetime and mitigate EMI impact. A 1 kV class, 150 A prototype was developed to validate the proposed concepts.

Kandula, Prasad↗
NASA NTRS1994

High-Temperature, Oxidation-Resistant Thermocouples

Aluminum substituted for rhodium, which is scarce and expensive. Electromotive force increases with aluminum content in Pt/Al leg of Pt(Pt/Al) thermocouple. Wires baked longer in aluminizing bed produce larger voltages. Thermocouples containing platinum/aluminum legs used instead of thermocouples of type R in furnaces, heat engines, and chemical reactors. Expecially suited to high-velocity oxidizing environments. Constructed as thin-film sensors on turbine blades and vanes, where pre-oxidation provides insulating film needed between thermocouple legs. Because aluminum content slowly depleted by oxidation, long-term use recommended only where maximum temperature is 1,200 degrees C or less.

Smialek, James L.↗
DOE OSTI2025

Integration of hydrophobic gas diffusion layers for zero-gap electrolyzers to enable highly energy-efficient CO 2 electrolysis to C 2 products

Electrochemical CO 2 reduction (eCO2R) is an attractive route for mitigating global CO 2 emissions while producing value-added chemicals. Ethylene is one product of eCO2R and is an essential industrial precursor with a global market of $230 billion. The large-scale implementation of C 2 H 4 -selective CO 2 electrolyzers remains challenging because of low energy efficiencies. In this work, we develop the design principles necessary for incorporating an expanded polytetrafluoroethylene (ePTFE) electrode into a zero-gap electrolyzer while simultaneously developing an integrated electrical front contact that reduces the ohmic resistances inherent to electrically insulating gas diffusion layers. By co-designing the catalyst layer, gas diffusion medium, and operating conditions for a zero-gap ePTFE gas diffusion electrode (GDE), we achieved a full-cell voltage of 2.5 V at 200 mA cm −2 at 25 cm 2 geometric area cell with Faradaic efficiencies of 48% for ethylene and 40% for ethanol. This work highlights strategies for developing a scalable, stable, and highly energy-efficient eCO2R for C 2 products.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1981

Solar cell modules for plasma interaction evaluation

A plasma interaction analysis in support of the solar electric propulsion subsystem examined the effects of a large high voltage solar array interacting with an ion thruster produced plasma. Two solar array test modules consisting of 36 large area wraparound contact solar cells welded to a flexible Kapton integrated circuit substrate were abricated. The modules contained certain features of the effects of insulation, din-holes, and bonding of the cell to the substrate and a ground plane. The possibility of a significant power loss occurring due to the collection of charged particles on the solar array interconnects was the focus of the research.

Source record↗
NASA NTRS1978

Spacecraft-generated plasma interaction with high voltage solar array

Calculations are made of the effect of interactions of spacecraft-generated plasmas and high voltage solar array components on an advanced Solar Electric Propulsion system. The plasma consists of mercury ions and electrons resulting from the operation of ion thrusters and associated hollow cathode neutralizers. Because large areas of the solar array are at high potential and not completely insulated from the surrounding plasma, the array can, under some conditions, collect excessive electron currents. Results are given for the parasitic currents collected by the solar arrays and means for reducing these currents are considered.

Parks, D. E.↗
NASA NTRS1986

Room temperature deposition of superconducting NbN for superconductor-insulator-superconductor junctions

The deposition of stoichiometric B1-crystal-structure (111) NbN films on glass or sapphire substrates by reactive dc magnetron sputtering is reported. High-purity Ar-N2 mixtures are used in the apparatus described by Thakoor et al. (1985), and typical deposition parameters are given as background pressure about 10 ntorr, voltage -325 V, current 1 A, deposition rate 1.35 nm/s, film thickness 500 nm, P(Ar) 5-17 mtorr, initial P(N2) 2-6 mtorr, and room temperature. The N2 consumption-injection characteristics are studied and found to control NbN formation using well-conditioned Nb targets. Films with transition temperatures 15-16 K are obtained at P(Ar) = 12.9 + or - 0.2 mtorr and P(N2) = 3.7 + or - 0.1 mtorr. SIS junctions of area about 0.001 sq cm fabricated using the NbN films are shown to have I-V characteristics with nonlinearity parameter about 110 and NbN superconducting-gap parameter Delta = about 2.8 meV.

Thakoor, S.↗
NASA NTRS2005

An Improved Thermal Conductivity Polyurethane Composite for a Space Borne 20KV Power Supply

This effort was designed to find a way to reduce the temperature rise of critical components of a 20KV High Voltage Power Supply (HVPS) by improving the overall thermal conductivity of the encapsulated modules. Three strategies were evaluated by developing complete procedures, preparing samples, and performing tests. The three strategies were: 1. Improve the thermal conductivity of the polyurethane encapsulant through the addition of thermally conductive powder while minimizing impact on other characteristics of the encapsulant. 2. Improve the thermal conductivity of the polyurethane encapsulated assembly by the addition of a slab of thermally conductive, electrically insulating material, which is to act as a heat spreader. 3. Employ a more thermally conductive substrate (Al203) with the existing encapsulation scheme. The materials were chosen based on the following criteria: high dielectric breakdown strength; high thermal conductivity, ease of manufacturing, high compliance, and other standard space qualified materials properties (low out-gassing, etc.). An optimized cure was determined by a statistical design of experiments for both filled and unfilled materials. The materials were characterized for the desired properties and a complete process was developed and tested. The thermal performance was substantially improved and the strategies may be used for space flight.

Pb free↗
DOE OSTI2021

SiC-Based 5-kV Universal Modular Soft-Switching Solid-State Transformer (M-S4T) for Medium-Voltage DC Microgrids and Distribution Grids

Medium-voltage DC (MVDC) grids are attractive for electric aircraft and ship power systems, battery energy storage system (BESS), fast charging electric vehicle (EV), etc. Such EV or BESS applications need isolated bidirectional MVDC to LVDC or LVAC converters. However, the existing Si-based solutions cannot fulfill the requirements of a high-efficiency and robust converter for MVDC grids. This paper presents a 5 kV SiC-based universal modular solid-state transformer (SST). This universal current-source SST can interface either a LVAC or LVDC grid with a MVDC grid in single-stage power conversion, while the conventional dual active bridge (DAB) converter needs an additional inverter. The proposed SST module using 3.3 kV SiC MOSFETs and diodes is bidirectional and can serve as a building block in series or parallel for higher-voltage higher-power systems. The topology of each module is based on the soft-switching solid-state transformer (S4T) with reduced conduction loss, which features reduced EMI through controlled dv/dt, and high efficiency with full-range ZVS for main devices and ZCS for auxiliary devices. Operation principle of the modular S4T (M-S4T), capacitor voltage balancing control between the cascaded modules, design of components including a medium-voltage (MV) medium-frequency transformer (MFT) to realize a 50 kVA 5 kV DC to 600 V DC or 480 V AC M-S4T are presented. Importantly, the MV MFT prototype achieves very low leakage inductance (0.13%) and 15 kV insulation with coaxial cables and nanocrystalline cores. Here, the proposed universal modular SST is compared against the DAB solution and verified with DC-DC and DC-AC simulation and 4 kV experimental results. Significantly, the MV experimental results of a modular DC transformer with each module at MVDC are rarely covered in the literature and reported for the first time.

14 SOLAR ENERGY↗
NASA NTRS1981

A test and instrumentation system for the investigation of degradation of electrical insulating materials

A comprehensive test apparatus has been developed for the evaluation of the effects of thermal cycling, high temperatures and high electric fields on the quality and stability of electrical insulating materials used in spacecraft systems. The system includes a test chamber in which the specimen can be subjected to thermal and electrical stresses encountered in the space environment (temperatures from -50 to 200 C and voltages from 0 to 10 kV rms, respectively) simultaneously. The system instrumentation includes provisions for the measurement of the change in capacitance, the thermal dissipation factor of the material, and complex dielectric constants with changes in temperature, corona intensity and voltages at frequencies from 22 kHz to 70 MHz, as well as the volume and surface resistivities of the materials.

Doreswamy, C. V.↗
DOE OSTI2024

Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts

Abstract Epitaxial regrowth processes are presented for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts. Utilizing a deep gate recess etch into the channel and an epitaxial regrown p‐AlGaN gate structure, an Al 0.85 Ga 0.15 N barrier/Al 0.50 Ga 0.50 N channel HEMT with a large positive threshold voltage (V TH = +3.5 V) and negligible gate leakage is demonstrated. Epitaxial regrowth of AlGaN avoids the use of gate insulators which can suffer from charge trapping effects observed in typical dielectric layers deposited on AlGaN. Low resistance Ohmic contacts (minimum specific contact resistance = 4 × 10 −6 Ω cm 2 , average = 1.8 × 10 −4 Ω cm 2 ) are demonstrated in an Al 0.85 Ga 0.15 N barrier/Al 0.68 Ga 0.32 N channel HEMT by employing epitaxial regrowth of a heavily doped, n‐type, reverse compositionally graded epitaxial structure. The combination of low‐leakage, large positive threshold p‐gates and low resistance Ohmic contacts by the described regrowth processes provide a pathway to realizing high‐current, enhancement‐mode, Al‐rich AlGaN‐based ultra‐wide bandgap transistors.

36 MATERIALS SCIENCE↗