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Electrons interaction with impurities and longitudinal optical phonon in metal-insulator- semiconductor tunnel junctions
Continuous impurities purging from hydrogen oxygen fuel cells gas compartments, describing operation mode and design techniques
Mechanical properties of vapor deposited tungsten are improved by selective incorporation of various nonmetallic impurities. Addition of trace quantities of carbon, nitrogen, or oxygen can significantly increase both low and high temperature yield strength without greatly affecting ductile-to-brittle transition temperature.
The elementary classical models for idealized diffusion conditions are described, and the principles are then used in developing more realistic models. The practical models require some type of numerical analysis. The numerical techniques are outlined and details concerning their implementation are given. Some results are presented which were obtained with the computer programs implementing the numerical techniques with implicit and explicit methods. Special problems of impurity-rich interlayers forming between an oxide and silicon are considered. A set of computed curves for sheet resistance, junction depth, and oxide thickness for different diffusion schedules is included.
Investigation of impurity-related electron-hole traps that are known to be sensitive to ionizing radiations. Electron spin resonance (ESR) equivalent natural doses were determined for the Al hole trap in virgin specimens; the doses agreed with estimates based on published data for the Ge electron trap. The 0.17 deg/sec 180 and 300 C thermoluminescence (TL) peaks in natural specimens were found to have activation energies approximately correct for the Ge trap. The 300 C peak was also found to be correlated with annealing of the Ge electron resonance in gamma-irradiated, step-annealed specimens. Although the 300 C peak occurs in virgin specimens, the corresponding natural Ge electron resonance was not observed.
Thermionic performance data from a miniature plane cesium diode (diminiode) with 110-tungsten electrodes are presented. The diminiode has a guard-ringed collector and a spacing of 0.23 mm. The data were obtained by using a computerized acquisition system. The diode was tested at increments between 1700 and 1900 K for the emitter, 694 and 1101 K for the collector, and 519 and 650 K for the reservoir. A maximum power density of 4.5 W/sq cm was obtained at an emitter temperature of 1900 K. This relatively low output probably results from high carbon and sodium impurities in the electrode materials.
Electron density profiles which include the effect of an ablated sodium impurity were computed for the boundary layer on a blunt-nosed body re-entering the atmosphere at 7.62 km/sec. Profiles are computed from the nose to a distance of four diameters along the RAM C-payload. A finite-difference, laminar, nonequilibrium chemistry boundary-layer program was used. Comparison of theory with S-band diagnostic antenna results, electron concentration deduced from X- and C-band attenuation data, and Langmuir probe data at several different aft body locations show that agreement is good at high altitude. At the lower altitudes there is disagreement between theory and S-band antenna data where the apparent discrepancy is attributed to the three-body recombination rate constant used for deionization of sodium coupled with the effect of angle of attack.
The feasibility of using the MOS C-V technique to obtain information regarding impurity and surface state concentrations on the diffused face of silicon solar cells with Ta2O5 coatings is studied. Results indicate that the MOS C-V technique yields useful information concerning surface parameters which contribute to the high, efficiency limiting, surface recombination velocities on the n+ surface of silicon solar cells.
In the investigation about 1000 mass spectra were taken with the aid of a quadrupole mass filter. Attention was given to the determination of the densities of impurities as functions of time during operation. Studies of (almost) steady-state spectra were conducted. Analyses of the gas released when cold surfaces were allowed to warm up were also carried out. The results of the investigation suggest that the outgassing is diffusion-controlled.
Experimental measurements were made of solar cell and related photovoltaic parameters for silicon with high concentrations of dopant impurities. The cell output peaked for doping levels around 10 to the 17th power per cu cm. Independent measurements of diffusion length and open circuit voltage at high doping levels showed severe reductions at concentrations above 10 to the 18th power per cu cm. Theoretical reasons are given to explain these reductions. Indication is given of the problems requiring solution before increased cell output can be achieved at high doping levels.
Method is based on measurements of electrical conductivity through layer of distilled water that has been deposited on metal surface. Conductivity is measured for 15-30 minute period, which is sufficient time to allow surface impurities to dissolve in water.
One potential means of improving the efficiency of solar cells especially after space irradiation is to incorporate built-in fields into the device through the use of impurity doping gradients. A detailed numerical calculation of solar cell performance has been used to study various types of doping gradients. In general, the predicted improvements in performance have been less than previously reported due to various device effects such as, high injection and the dependence of lifetime on doping density.
Increased solar cell efficiencies are attained by reduction of surface recombination and variation of impurity concentration profiles at the n(+) surface of silicon solar cells. Diagnostic techniques are employed to evaluate the effects of specific materials preparation methodologies on surface and near surface concentrations. It is demonstrated that the MOS C-V method, when combined with a bulk measurement technique, yields more complete concentration data than are obtainable by either method alone. Specifically, new solar cell MOS C-V measurements are combined with bulk concentrations obtained by a successive layer removal technique utilizing measurements of sheet resistivity and Hall coefficient.
A methodology was developed and implemented to allow silicon samples containing intentionally incorporated impurities to be fabricated into finished solar cells under carefully controlled conditions. The electrical and spectral properties were then measured for each group processed.
The presumed relationship of chemical impurities to final composite properties was investigated for PMR-polyimide resin. Ester/acid solutions of one monomer were aged at selected temperatures and chemical changes were monitored spectroscopically. At selected intervals, graphite fiber reinforced composite panels were fabricated. Changes in resin processing characteristics and composite properties were determined. The correlation of these data are discussed as are related characterization studies of PMR-polyimide resin.
The plugging of airfoil cooling holes by typical coal-derived fuel impurities was evaluated using doped combustion gases in an atmospheric pressure burner rig. Very high specific cooling air mass flow rates reduced or eliminated plugging. The amount of flow needed was a function of the composition of the deposit. It appears that plugging of film-cooled holes may be a problem for gas turbines burning coal-derived fuels.
The presumed relationship of chemical impurities to final composite properties is the rationale for most chemical characterization studies. This study examines this relationship for PMR-polyimide resin. Ester/acid solutions of one monomer were aged at selected temperatures and chemical changes were monitored spectroscopically. At selected intervals, graphite fiber reinforced composite panels were fabricated. Changes in resin processing characteristics and composite properties were determined. The correlation of these data are discussed as are related characterization studies of PMR-polyimide resin.
Microstructural evaluation tests performed on Cu-doped, Ti-doped and Cu/Ti doped p-type silicon single crystal wafers, before and after the solar cell fabrication, and evaluation of both dark forward and reverse I-V characteristic records for the solar cells produced from the corresponding silicon wafers, show that Cu mitigates the unfavorable effects of Ti, and thus provides for higher conversion efficiency, thereby providing an economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material.