Suspended Membrane Waveguides towards a Photonic Atom Trap Integrated Platform .
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An apparatus such as an optical modulator includes a buried oxide layer is disposed on a substrate. A microring resonator and an optical waveguide are disposed on the buried oxide layer and within a bonded semiconductor layer. The optical waveguide is optically coupled to the microring resonator and inputs a first optical wave into the microring resonator. An oxide layer is deposited on top of the optical waveguide and the microring resonator. A set of electrodes is disposed adjacent to the microring resonator, and in response to an electrical signal, the set of electrodes modulates the first optical wave into a modulated optical wave of transverse magnetic polarization within the microring resonator and outputs the modulated optical wave to the optical waveguide.
An atom trap integrated platform (ATIP) comprises a substrate, a membrane, and a suspended waveguide. The substrate has an opening formed therein. The membrane extends across a portion of the substrate opening. The suspended waveguide is formed on the membrane such that the suspended waveguide extends from a first edge of the substrate to a second edge. A magneto-optical trap (MOT) is formed around the suspended waveguide by emitting a plurality of cooling beams and a repump through the substrate opening. Evanescent fields are established above the suspended waveguide by coupling two trapping beams through the suspended waveguide, which trapping beams are red-detuned and blue-detuned with respect to the resonant optical transition of the atoms. By forming the MOT within the evanescent fields, an evanescent field optical trap (EFOT) is formed.
An efficient, scalable source of shaped single photons that can be directly integrated with optical fiber networks and quantum memories is at the heart of many protocols in quantum information science. We demonstrate a deterministic source of arbitrarily temporally shaped single-photon pulses with high efficiency [detection efficiency = 14.9 %] and purity [g (2) (0) = 0.0168] and streams of up to 11 consecutively detected single photons using a silicon-vacancy center in a highly directional fiber-integrated diamond nanophotonic cavity. Finally, combined with previously demonstrated spin-photon entangling gates, this system enables on-demand generation of streams of correlated photons such as cluster states and could be used as a resource for robust transmission and processing of quantum information.
Abstract Integrated silicon photonics has sparked a significant ramp-up of investment in both academia and industry as a scalable, power-efficient, and eco-friendly solution. At the heart of this platform is the light source, which in itself, has been the focus of research and development extensively. This paper sheds light and conveys our perspective on the current state-of-the-art in different aspects of application-driven on-chip silicon lasers. We tackle this from two perspectives: device-level and system-wide points of view. In the former, the different routes taken in integrating on-chip lasers are explored from different material systems to the chosen integration methodologies. Then, the discussion focus is shifted towards system-wide applications that show great prospects in incorporating photonic integrated circuits (PIC) with on-chip lasers and active devices, namely, optical communications and interconnects, optical phased array-based LiDAR, sensors for chemical and biological analysis, integrated quantum technologies, and finally, optical computing. By leveraging the myriad inherent attractive features of integrated silicon photonics, this paper aims to inspire further development in incorporating PICs with on-chip lasers in, but not limited to, these applications for substantial performance gains, green solutions, and mass production.
Here, we demonstrate waveguide-integrated superconducting nanowire single-photon detectors on thin-film lithium niobate (LiNbO 3 , LN). Using a 250 μm-long NbN superconducting nanowire lithographically defined on top of a 125 μm-long LN nanowaveguide, an on-chip detection efficiency of 46% is realized with simultaneous high performance in dark count rates and timing jitter. As LN possesses high χ (2) second-order nonlinear and electro-optic properties, an efficient single-photon detector on thin-film LN opens up the possibility to construct a small-scale fully integrated quantum photonic chip, which includes single-photon sources, filters, tunable quantum gates, and detectors.
Optical isolators are an essential component of photonic systems. Current integrated optical isolators have limited bandwidths due to stringent phase-matching conditions, resonant structures, or material absorption. Here, we demonstrate a wideband integrated optical isolator in thin-film lithium niobate photonics. We use dynamic standing-wave modulation in a tandem configuration to break Lorentz reciprocity and achieve isolation. We measure an isolation ratio of 15 dB and insertion loss below 0.5 dB for a continuous wave laser input at 1550 nm. In addition, we experimentally show that this isolator can simultaneously operate at visible and telecom wavelengths with comparable performance. Isolation bandwidths up to ∼100 nm can be achieved simultaneously at both visible and telecom wavelengths, limited only by the modulation bandwidth. Our device’s dual-band isolation, high flexibility, and real-time tunability can enable novel non-reciprocal functionality on integrated photonic platforms.
Abstract Heterogeneously integrated hybrid photonic crystal cavities enable strong light–matter interactions with solid state, optically addressable quantum memories. A key challenge to realizing high quality factor ( Q ) hybrid photonic crystals is the reduced index contrast on the substrate compared to suspended devices in air. This challenge is particularly acute for color centers in diamond because of diamond’s high refractive index, which leads to increased scattering loss into the substrate. Here, we develop a design methodology for hybrid photonic crystals utilizing a detailed understanding of substrate-mediated loss, which incorporates sensitivity to fabrication errors as a critical parameter. Using this methodology, we design robust, high-Q, GaAs-on-diamond photonic crystal cavities, and by optimizing our fabrication procedure, we experimentally realize cavities with Q approaching 30,000 at a resonance wavelength of 955 nm.
An important step towards integration of microspheres in compact functional photonics devices, we demonstrate direct efficient coupling of light in and out of high-Q whispering-gallery (WG) modes in silica microspheres using angle-polished single mode fibers.
The sensitivity analysis algorithms that have been developed by the radiation transport community in multiple neutron transport codes, such as MCNP and SCALE, are extensively used by fields such as the nuclear criticality community. However, these techniques have seldom been considered for electron transport applications. In the past, the differential-operator method with the single scatter capability has been implemented in Sandia National Laboratories’ Integrated TIGER Series (ITS) coupled electron-photon transport code. This work is meant to extend the available sensitivity estimation techniques in ITS by implementing an adjoint-based sensitivity method, GEAR-MC, to strengthen its sensitivity analysis capabilities. To ensure the accuracy of this method being extended to coupled electron-photon transport, it is compared against the central-difference and differential-operator methodologies to estimate sensitivity coefficients for an experiment performed by McLaughlin and Hussman. Energy deposition sensitivities were calculated using all three methods, and the comparison between them has provided confidence in the accuracy of the newly implemented method. Unlike the current implementation of the differential-operator method in ITS, the GEAR-MC method was implemented with the option to calculate the energy-dependent energy deposition sensitivities, which are the sensitivity coefficients for energy deposition tallies to energy-dependent cross sections. The energy-dependent cross sections could be the cross sections for the material, elements in the material, or reactions of interest for the element. Further, these sensitivities were compared to the energy-integrated sensitivity coefficients and exhibited a maximum percentage difference of 2.15%.
Presented is an O-band silicon photonics dual-polarization coherent/IMDD modulator integrated with semiconductor optical amplifiers and tunable laser to enhance the short-reach link budget. The laser demonstrated output power >6 dBm and a <250 kHz linewidth over a 14 nm tuning range. Modulators paired with custom 64 Gbaud QPSK drivers exhibited improved analog link sensitivity compared to similar devices without integrated gain sections. They also demonstrated 53 Gbaud dual-polarization PAM4 operation when characterized with a linear driver and MaxLinear 100G/lane DSP board. Both optical links achieved BERs at the KP4-FEC threshold and overall transmitter assembly energy consumption <6.9 pJ/bit without any thermal control when at steady room temperatures.
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This is the final report for the Time-Sensitive Quantum Key Distribution (TSQKD) project and summarizes the demonstration and longer-term field testing at an electric utility, EPB of Chattanooga, in Chattanooga, TN. The demonstration was held virtually (due to the COVID pandemic) and successfully executed the tests outlined in a prior report, “Task 10: Develop a QKD Time-Sensitive Networking Test Suite” submitted 9/30/2020. The portable test equipment explained in Task 10 and earlier task reports was tested at GE Research remotely connected with Qubitekk’s QKD equipment in San Diego, CA. Then the equipment was shipped to Qubitekk for physical integration with Qubitekk’s Quantum DataLoc™ Key Server 1570nm (http://qubitekk.com/products/qkd-for-industrial-control-systems-ics/). The portable test equipment was shipped from Qubitekk to EPB for demonstration and extended field testing. A summary of the demonstration and test results are described in this report. The demo and extended field test results are enabled by the NETCONF/YANG IEEE P1913 data management model developed as part of this project (Task 5). The NETCONF/YANG IEEE P1913 data management model demonstrated significant practical utility in providing a common means of monitoring and configuring the QKD system. All data in this report comes from the IEEE P1913 data management model.
Silicon photonics is a platform that enables densely integrated photonic components and systems and integration with electronic circuits. Depletion mode modulators designed on this platform suffer from a fundamental frequency response limit due to the mobility of carriers in silicon. Lithium niobate-based modulators have demonstrated high performance, but the material is difficult to process and cannot be easily integrated with other photonic components and electronics. In this manuscript, we simultaneously take advantage of the benefits of silicon photonics and the Pockels effect in lithium niobate by heterogeneously integrating silicon photonic-integrated circuits with thin-film lithium niobate samples. We demonstrate the most CMOS-compatible thin-film lithium niobate modulator to date, which has electro-optic 3 dB bandwidths of 30.6 GHz and half-wave voltages of 6.7 V×cm. These modulators are fabricated entirely in CMOS facilities, with the exception of the bonding of a thin-film lithium niobate sample post fabrication, and require no etching of lithium niobate.
Solid-state single-photon emitters (SPEs) are attracting significant attention as fundamental components in quantum computing, communication, and sensing. Low-dimensional materials-based SPEs (LD-SPEs) have drawn particular interest due to their high photon extraction efficiency, ease of integration with photonic circuits, and strong coupling with external fields. The accessible surfaces of LD materials allow for deterministic control over quantum light emission, while enhanced quantum confinement and light–matter interactions improve photon emissive properties. This perspective examines recent progress in LD-SPEs across four key materials: zero-dimensional (0D) semiconductor quantum dots, one-dimensional (1D) nanotubes, two-dimensional (2D) materials, including hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDCs). We explore their structural and photophysical properties, along with techniques such as spectral tuning and cavity coupling, which enhance SPE performance. Finally, we address future challenges and suggest strategies for optimizing LD-SPEs for practical quantum applications.
For the past 25 years, the National Aeronautics and Space Administration (NASA) Goddard Space Flight Center’s Photonics Group in the Engineering Directorate has been substantially contributing to the flight design, development, production, testing and integration of many science and navigational instruments. The group has an extensive background in screening, qualifying, development and integration of commercial components for spaceflight applications. They have been willing to communicate lessons learned in packaging, part construction, materials selection, testing, and other facets of the design and production process critical to implementation for high-reliability systems. Summarized here is the last ten years of instrumentation development lessons learned and data collected from the subsystems down to the optoelectronic component level.
Context. Galactic cosmic rays (CRs) play a crucial role in ionisation, dissociation, and excitation processes within dense cloud regions where UV radiation is absorbed by dust grains and gas species. CRs regulate the abundance of ions and radicals, leading to the formation of more and more complex molecular species, and determine the charge distribution on dust grains. A quantitative analysis of these effects is essential for understanding the dynamical and chemical evolution of star-forming regions. Aims. The CR-induced photon flux has a significant impact on the evolution of the dense molecular medium in its gas and dust components. This study evaluates the flux of UV photons generated by CRs to calculate the photon-induced dissociation and ionisation rates of a vast number of atomic and molecular species, as well as the integrated UV photon flux. Methods. To achieve these goals, we took advantage of recent developments in the determination of the spectra of secondary electrons, in the calculation of state-resolved excitation cross sections of H 2 by electron impact, and of photodissociation and photoionisation cross sections. Results. We calculated the H 2 level population of each rovibrational level of the X, B, C, B′, D, B″, D′, and a states. We then computed the UV photon spectrum of H 2 in its line and continuum components between 72 and 700 nm, with unprecedented accuracy, as a function of the CR spectrum incident on a molecular cloud, the H 2 column density, the isomeric H 2 composition, and the dust properties. The resulting photodissociation and photoionisation rates are, on average, lower than previous determinations by a factor of about 2, with deviations of up to a factor of 5 for the photodissociation of species such as AlH, C 2 H 2 , C 2 H 3 , C 3 H 3 , LiH, N 2 , NaCl, NaH, O 2 + , S2, SiH, l-C 4 , and l-C 5 H. A special focus is given to the photoionisation rates of H 2 , HF, and N 2 , as well as to the photodissociation of H 2 , which we find to be orders of magnitude higher than previous estimates. We give parameterisations for both the photorates and the integrated UV photon flux as a function of the CR ionisation rate, which implicitly depends on the H 2 column density, as well as the dust properties.