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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Process Modeling of U-10wt% Mo Alloys Using Integrated Computational Materials Engineering

Low-enriched uranium alloyed with 10 wt% molybdenum (U-10Mo) has been identified as a promising alternative to highly enriched uranium as fuel for the nation’s high-performance research reactors. Manufacturing the U-10Mo alloy consists of multiple complex thermomechanical processes, which is highly challenging for computational modeling. The integrated computational materials engineering (ICME) concept supports building a microstructure-based framework to investigate the effect of manufacturing processes on the material microstructure. In this report, an ICME model that combines homogenization, hot rolling, annealing, and cold rolling is presented as an example of implementing the ICME concept for modeling the manufacturing processes of the U-10Mo alloy. The integrated model enables information to be passed between the different model components, leading to an improved prediction and a better understanding of microstructure across multiple processes. The integrated model was also implemented to investigate the variation of chemical composition, thickness of the zirconium interlayer, grain growth, and carbide redistribution and fracture of U-10Mo during the thermomechanical processes. With the homogenization model, a molybdenum concentration map can be reconstructed from any given microstructure, and the homogenization time needed to reach a desired homogenization level can also be approximated. The microstructure-based finite-element rolling model, shows that the homogenization process reduces the nonuniformity in the thickness of the zirconium interlayers on the U-10Mo. With the output from the rolling model, a statistical analysis of second-phase hard particles was conducted to quantify the particle redistribution and interparticle spacing between carbides during the deformation. Also, new stringer identification criteria were proposed to predict the correlation between stringer volume fractions and hot-rolling reduction. A macro-finite-element method hot-rolling model showed that higher reduction passes can be achieved within the mill separation force range, and a new “aggressive” rolling schedule was proposed. The model also showed the importance of can material on the quality of rolled foils, with stronger can materials resulting in hot-rolled U-10Mo free of defects (waviness, dog-boning). The deformation-induced recrystallization model demonstrated capability to use inputs from deformation simulations of strain accumulation in U-10Mo samples to predict grain growth behavior of the fuel during thermal treatment stages. Finally, a plane-strain compression mode simulated particle fracture and calculates the void volume fraction generated during cold rolling. The macro-finite-element method cold-rolling model showed that smaller diameter rolls are necessary to achieve the desired foil thickness.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

Berry curvature memory through electrically driven stacking transitions

In two-dimensional layered quantum materials, the interlayer stacking order determines both crystalline symmetry and quantum electronic properties such as Berry curvature, topology and electron correlation. Electrical stimuli can strongly influence quasi-particle interactions and the free energy landscape, thus making it possible to access hidden stacking orders with novel quantum properties and enabling dynamic engineering of these attributes. In this paper, we demonstrate electrically driven stacking transitions and a new type of nonvolatile memory based on Berry curvature in few-layer WTe 2 . The interplay of out-of-plane electric fields and electrostatic doping controls in-plane interlayer sliding and creates multiple polar and centrosymmetric stacking orders. In-situ nonlinear Hall transport reveals such stacking rearrangements result in a layer-parity-selective Berry curvature memory in momentum space, where the sign reversal of the Berry curvature only occurs in odd layer crystals. Our findings open an avenue towards exploring coupling between topology, electron correlations, and ferroelectricity in hidden stacking orders and demonstrate a new low energy cost, electrically-controlled topological memory in the atomically thin limit.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Role of the third dimension in searching for Majorana fermions in α-RuCl 3 via phonons

Understanding phonons in α-RuCl 3 is critical to analyze the controversy around the observation of the half-integer thermal quantum Hall effect. While many studies have focused on the magnetic excitations in α-RuCl 3 , its vibrational excitation spectrum has remained relatively unexplored. We investigate the phonon structure of α-RuCl 3 via inelastic neutron-scattering experiments and density-functional-theory calculations. Our results show excellent agreement between experiment and first-principles calculations. After validating our theoretical model, we extrapolate the low-energy phonon properties. We find that the phonons in α-RuCl 3 that either propagate or vibrate in the out-of-plane direction have significantly reduced velocities and therefore have the potential to dominate the observability of the elusive half-integer plateaus in the thermal Hall conductance. In addition, we use low-energy interlayer phonons to resolve the low-temperature stacking structure of our large crystal of α-RuCl 3 , which we find to be consistent with that of the R$\bar{3}$ space group, in agreement with neutron diffraction.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1981

Epitaxial thin film GaAs solar cells using OM-CVD techniques

A new approach has been initiated at JPL to fabricate thin-film, high efficiency GaAs solar cells on low-cost, single-crystal Si substrates having a thin CVD interlayer of Ge to minimize the lattice and thermal expansion mismatch. For initial experiments, n(+)/p GaAs cells were grown by OM-CVD on single-crystal GaAs and Ge wafers. Details of the growths and performance results will be presented. Subsequently, a combined epitaxial structure of OM-CVD GaAs on a strongly adherent Ge interlayer on (100) Si was grown. This is the first report of the successful growth of this composite structure. Low module costs projected by JPL SAMICS methodology calculations and the potential for 400-600W/kg space solar arrays will be discussed.

Stirn, R. J.↗
DOE OSTI2022

Towards directed energy deposition of metals using polymer-based supports: porosity of 316L stainless steel deposited on carbon-fiber-reinforced ABS

Directed energy deposition (DED) is increasingly valuable to many industries because of its high deposition rates relative to other metal additive manufacturing processes, but the design space of DED is limited. For instance, steep overhangs are difficult or impossible to manufacture. Polymer-based support structures could help address this challenge. The viability of DED on polymer composite substrates has begun to be explored, specifically with 316L stainless steel on carbon-fiber-reinforced ABS substrates. Monolithic metal components can be deposited on the polymer, but it was found that gas release during polymer degradation causes porosity due to gas entrapment in the metal. An interlayer cooling time was introduced to reduce polymer degradation and decrease the porosity due to gas entrapment, but this led to porosity from lack of fusion. The results of this work provide insight into process parameter selection and scan strategy development to enable the use of polymer support structures in blown-powder DED.

Kurfess, Rebecca↗
DOE OSTI2021

Exploring few and single layer CrPS 4 with near-field infrared spectroscopy

Abstract We combine synchrotron-based near-field infrared spectroscopy and first principles lattice dynamics calculations to explore the vibrational response of CrPS 4 in bulk, few-, and single-layer form. Analysis of the mode pattern reveals a C 2 polar + chiral space group, no symmetry crossover as a function of layer number, and a series of non-monotonic frequency shifts in which modes with significant intralayer character harden on approach to the ultra-thin limit whereas those containing interlayer motion or more complicated displacement patterns soften and show inflection points or steps. This is different from MnPS 3 where phonons shift as 1/size 2 and are sensitive to the three-fold rotation about the metal center that drives the symmetry crossover. We discuss these differences as well as implications for properties such as electric polarization in terms of presence or absence of the P–P dimer and other aspects of local structure, sheet density, and size of the van der Waals gap.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Synthesis, modular composition, and electrochemical properties of lamellar iron sulfides

Transition metal chalcogenides with layered structures are promising materials for energy storage, catalysis, and electronics, among other areas. We have identified a new layered phase of iron sulfide containing interlayer solvated cations. We present an optimized synthesis for the Li + -containing material from an Fe(III) xanthate complex. Structure and composition data indicate the material consists of poorly-ordered iron sulfide layers separated by solvated cations. The lamellar spacing in these materials can be tuned by changing the identity of the cation. Furthermore, the lamellar spacing can also be reversibly tuned by the degree of solvation of the material. The material is electrically conductive and can serve as a pseudocapacitor with comparable performance to commercial materials such as MnO 2 . Finally, these materials also show promise as lithium or sodium ion battery cathodes with good capacity and reversibility.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Ising-Type Single-Segment Ferromagnetic Nanowire with Core/Shell: the Dependences of the Angle, Temperature, and Geometry

The hysteresis properties of a nanostructure are affected by many factors, such as the material of the nanostructure, the shape and size of the nanostructure, the orientation of the magnetizing field. In the present study, the influence of angle, temperature, and geometry on an Ising-type single-segment ferromagnetic nanowire with core/shell are studied by the effective-field theory with correlations. The behavior of the coercivity is presented by means of phase diagrams in the seven different planes and detected the magnetic characteristics of the nanowire. We find that the magnetic hardness decreases as the angle and temperature increase. We also observe that hysteresis behaviors of ferromagnetic nanowire have strong dependence on interlayer length, shell length, and wire length.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN

This study developed an Ohmic contact formation method for a ZnO:Al (AZO) transparent conductive layer on p-GaN films involving the introduction of an indium oxynitride (InON) nanodot interlayer. An antisurfactant pretreatment was used to grow InON nanodots on p-GaN films in a RF magnetron sputtering system. A low specific contact resistance of 1.12 × 10{sup −4} Ω cm{sup 2} was achieved for a sample annealed at 500 °C for 30 s in nitrogen ambient and embedded with an InON nanodot interlayer with a nanodot density of 6.5 × 10{sup 8} cm{sup −2}. By contrast, a sample annealed in oxygen ambient exhibited non-Ohmic behavior. X-ray photoemission spectroscopy results showed that the oxygen vacancy (V{sub o}) in the InON nanodots played a crucial role in carrier transport. The fitting I–V characteristic curves indicated that the hopping mechanism with an activation energy of 31.6 meV and trap site spacing of 1.1 nm dominated the carrier transport in the AZO/InON nanodot/p-GaN sample. Because of the high density of donor-like oxygen vacancy defects at the InON nanodot/p-GaN interface, positive charges from the underlying p-GaN films were absorbed at the interface. This led to positive charge accumulation, creating a narrow depletion layer; therefore, carriers from the AZO layer passed through InON nanodots by hopping transport, and subsequently tunneling through the interface to enter the p-GaN films. Thus, AZO Ohmic contact can be formed on p-GaN films by embedding an InON nanodot interlayer to facilitate trap-assisted tunneling.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2006

Metallurgical Mechanisms Controlling Mechanical Properties of Aluminum Alloy 2219 Produced by Electron Beam Freeform Fabrication

The electron beam freeform fabrication (EBF3) layer-additive manufacturing process has been developed to directly fabricate complex geometry components. EBF3 introduces metal wire into a molten pool created on the surface of a substrate by a focused electron beam. Part geometry is achieved by translating the substrate with respect to the beam to build the part one layer at a time. Tensile properties demonstrated for electron beam deposited aluminum and titanium alloys are comparable to wrought products, although the microstructures of the deposits exhibit cast features. Understanding the metallurgical mechanisms controlling mechanical properties is essential to maximizing application of the EBF3 process. Tensile mechanical properties and microstructures were examined for aluminum alloy 2219 fabricated over a range of EBF3 process variables. Unique microstructures were observed within the deposited layers and at interlayer boundaries, which varied within the deposit height due to microstructural evolution associated with the complex thermal history experienced during subsequent layer deposition. Microstructures exhibited irregularly shaped grains with interior dendritic structures, described based on overall grain size, morphology, distribution, and dendrite spacing, and were correlated with deposition parameters. Fracture features were compared with microstructural elements to define fracture paths and aid in definition of basic processing-microstructure-property correlations.

Domack, Marcia S.↗
NASA NTRS2007

Toward a III-V Multijunction Space Cell Technology on Si

High efficiency compound semiconductor solar cells grown on Si substrates are of growing interest in the photovoltaics community for both terrestrial and space applications. As a potential substrate for III-V compound photovoltaics, Si has many advantages over traditional Ge and GaAs substrates that include higher thermal conductivity, lower weight, lower material costs, and the potential to leverage the extensive manufacturing base of the Si industry. Such a technology that would retain high solar conversion efficiency at reduced weight and cost would result in space solar cells that simultaneously possess high specific power (W/kg) and high power density (W/m2). For terrestrial solar cells this would result in high efficiency III-V concentrators with improved thermal conductivity, reduced cost, and via the use of SiGe graded interlayers as active component layers the possibility of integrating low bandgap sub-cells that could provide for extremely high conversion efficiency.1 In addition to photovoltaics, there has been an historical interest in III-V/Si integration to provide optical interconnects in Si electronics, which has become of even greater relevance recently due to impending bottlenecks in CMOS based circuitry. As a result, numerous strategies to integrate GaAs with Si have been explored with the primary issue being the approx.4% lattice mismatch between GaAs and Si. Among these efforts, relaxed, compositionally-graded SiGe buffer layers where the substrate lattice constant is effectively tuned from Si to that of Ge so that a close lattice match to subsequent GaAs overlayers have shown great promise. With this approach, threading dislocation densities (TDDs) of approx.1 x 10(exp 6)/sq cm have been uniformly achieved in relaxed Ge layers on Si,5 leading to GaAs on Si with minority carrier lifetimes greater than 10 ns,6 GaAs single junction solar cells on Si with efficiencies greater than 18%,7 InGaAs CW laser diodes on Si,8 and room temperature GaInP red laser diodes on Si.9 Here we report on the first high performance dual junction GaInP/GaAs solar cells grown on Si using this promising SiGe engineered substrate approach.

Ringel, S. A.↗
DOE OSTI2024

Effect of layer bending on montmorillonite hydration and structure from molecular simulation

Conceptual models of smectite hydration include planar (flat) clay layers that undergo stepwise expansion as successive monolayers of water molecules fill the interlayer regions. However, X-ray diffraction (XRD) studies indicate the presence of interstratified hydration states, suggesting non-uniform interlayer hydration in smectites. Additionally, recent theoretical studies have shown that clay layers can adopt bent configurations over nanometer-scale lateral dimensions with minimal effect on mechanical properties. Therefore, in this study we used molecular simulations to evaluate structural properties and water adsorption isotherms for montmorillonite models composed of bent clay layers in mixed hydration states. Results are compared with models consisting of planar clay layers with interstratified hydration states (e.g. 1W–2W). The small degree of bending in these models (up to 1.5 Å of vertical displacement over a 1.3 nm lateral dimension) had little or no effect on bond lengths and angle distributions within the clay layers. Except for models that included dry states, porosities and simulated water adsorption isotherms were nearly identical for bent or flat clay layers with the same averaged layer spacing. Similar agreement was seen with Na- and Ca-exchanged clays. In conclusion, while the small bent models did not retain their configurations during unconstrained molecular dynamics simulation with flexible clay layers, we show that bent structures are stable at much larger length scales by simulating a 41.6×7.1 nm 2 system that included dehydrated and hydrated regions in the same interlayer.

58 GEOSCIENCES↗
DOE OSTI2026

Vapor-phase pillarization of MXenes for engineering hierarchical interlayer porosity

MXenes, a family of two-dimensional (2D) multilamellar materials, possess excellent thermal and electronic properties for a range of applications. Their use in heterogeneous catalysis, however, is limited by the low surface area resulting from stacked layers. Pillarization with inorganic oxides can create more open, mesoporous MXene structures, improving accessibility for guest species to diffuse, reside or react in the space between 2D layers. A previous liquid-phase pillarization method, however, involves excessive use of solvent-based precursors and multiple processing steps. Here, we report a vapor-phase pillarization (VPP) strategy to introduce pillars, exemplified by silica pillars, with high pillar precursor usage efficiency and a simplified processing workflow. The resulting silica-pillared mesoporous MXene exhibits significantly increased surface area and porosity. These textural properties can be easily tuned by the VPP synthesis conditions. When applied as a ruthenium (Ru) catalyst support for the hydrogenolysis of low-density polyethylene (LDPE), the silica-pillared MXene enabled high Ru dispersion and catalytic activity. This study highlights the potential of the VPP method for engineering mesoporous, 2D MXene materials and demonstrates the effectiveness of mesoporous MXene as a catalyst support in overcoming mass transport and active-site accessibility challenges in heterogeneous catalysis involving bulky substances, such as plastics upcycling.

Luo, Song [University of Delaware, Newark, DE (Uni↗
DOE OSTI2020

Charge carrier dynamics in two-dimensional hybrid perovskites: Dion–Jacobson vs. Ruddlesden–Popper phases

Two-dimensional (2D) halide perovskites are promising materials for environmentally stable next-generation optoelectronic device applications. Besides the widely investigated Ruddlesden–Popper (RP) phases, Dion–Jacobson (DJ) phases are attracting considerable attention due to their rapid emergence as efficient solar cell materials. However, there is very little atomistic understanding of the charge carrier dynamics under ambient conditions for these DJ-phases, limiting the possibilities to tune their optoelectronic performances through compositional engineering routes. In this study, by combining nonadiabatic molecular dynamics with time-domain density functional theory methods at room temperature, we compare the dominant non-radiative carrier recombination and dephasing processes in RP and DJ monolayered lead halide perovskites. Our systematic study demonstrates that performance-limiting nonradiative carrier recombination processes greatly depends on the electron–phonon interactions induced by structural fluctuations and instantaneous charge localization in these materials. The stiffer interlayer packing due to the presence of single spacer dications, which separates the lead iodide slabs, reduces the thermal fluctuations in the DJ-phase to a greater extent than that in the RP-phase 2D-perovskites. Specific electronic coupling between the closely spaced lead iodide layers enhances the delocalization of band-edge charge densities in DJ-phase systems. Compared to the RP-phase, reduced inelastic electron–phonon scattering in DJ-phase perovskites significantly limits intrinsic non-radiative recombination processes. The consequent enhancement in the photogenerated charge carrier lifetime makes DJ-phase perovskites potentially suitable for various optoelectronic devices. The computational insights gained from this study allow us to outline a set of robust design principles for DJ-phase perovskites to strategically tune their optoelectronic properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

K 2 Co 2 TeO 6 : A layered magnet with a S = 1 2 Co 2 + honeycomb lattice

Recent observations of Kitaev interactions in d 7 electron configurations have generated research interest in Co 2+ based honeycomb magnets. Here, we report the synthesis of a K 2 Co 2 TeO 6 single crystal. X-ray diffraction and electron microscopy experiments show that K 2 Co 2 TeO 6 crystallizes in a $P$6 3 /$mcm$ space group with undistorted honeycomb layers of Co 2+ ions. Anisotropic magnetic and thermodynamic characterizations demonstrate an effective S = $\frac{1}{2}$ state of Co 2+ at low temperature, competing magnetic phases, and weak magnetic transitions that can be suppressed by applying fields. Moreover, the interlayer K disorder level is tunable by thermal treatments, and it affects the magnetic features obviously. In conclusion, our findings provide a new and promising platform for studying Kitaev physics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2006

Metallurgical Mechanisms Controlling Mechanical Properties of Aluminum Alloy 2219 Produced By Electron Beam Freeform Fabrication

The electron beam freeform fabrication (EBF3) layer-additive manufacturing process has been developed to directly fabricate complex geometry components. EBF3 introduces metal wire into a molten pool created on the surface of a substrate by a focused electron beam. Part geometry is achieved by translating the substrate with respect to the beam to build the part one layer at a time. Tensile properties have been demonstrated for electron beam deposited aluminum and titanium alloys that are comparable to wrought products, although the microstructures of the deposits exhibit features more typical of cast material. Understanding the metallurgical mechanisms controlling mechanical properties is essential to maximizing application of the EBF3 process. In the current study, mechanical properties and resulting microstructures were examined for aluminum alloy 2219 fabricated over a range of EBF3 process variables. Material performance was evaluated based on tensile properties and results were compared with properties of Al 2219 wrought products. Unique microstructures were observed within the deposited layers and at interlayer boundaries, which varied within the deposit height due to microstructural evolution associated with the complex thermal history experienced during subsequent layer deposition. Microstructures exhibited irregularly shaped grains, typically with interior dendritic structures, which were described based on overall grain size, morphology, distribution, and dendrite spacing, and were correlated with deposition parameters. Fracture features were compared with microstructural elements to define fracture paths and aid in definition of basic processing-microstructure-property correlations.

Domack, Marcia S.↗
DOE OSTI2015

K 2x Sn 4-x S 8-x (x = 0.65–1): a new metal sulfide for rapid and selective removal of Cs + , Sr 2+ and UO 2 2+ ions

The fission of uranium produces radionuclides, 137 Cs and 90 Sr, which are major constituents of spent nuclear fuel. The half-life of 137 Cs and 90 Sr is nearly 30 years and thus that makes them harmful to human life and the environment. The selective removal of these radionuclides in the presence of high salt concentrations from industrial nuclear waste is necessary for safe storage. We report the synthesis and crystal structure of K 2x Sn 4-x S 8-x (x = 0.65–1, KTS-3) a material which exhibits excellent Cs + , Sr 2+ and UO 2 2+ ion exchange properties in varying conditions. Furthermore, the compound adopts a layered structure which consists of exchangeable potassium ions sandwiched between infinite layers of octahedral and tetrahedral tin centers. K 2x Sn 4-x S 8-x (x = 0.65–1, KTS-3) crystallizes in the monoclinic space group P2 1 /c with cell parameters a = 13.092(3) Å, b = 16.882(2) Å, c = 7.375(1) Å and β = 98.10(1)°. Refinement of the single crystal diffraction data revealed the presence of Sn vacancies in the tetrahedra that are long range ordered. The interlayer potassium ions of KTS-3 can be exchanged for Cs + , Sr 2+ and UO 2 2+ . KTS-3 exhibits rapid and efficient ion exchange behavior in a broad pH range. The distribution coefficients (K d ) for KTS-3 are high for Cs + (5.5 × 10 4 ), Sr 2+ (3.9 × 10 5 ) and UO 2 2+ (2.7 × 10 4 ) at neutral pH (7.4, 6.9, 5.7 ppm Cs + , Sr 2+ and UO 2 2+ , respectively; V/m ~ 1000 mL g -1 ). KTS-3 exhibits impressive Cs + , Sr 2+ and UO 2 2+ ion exchange properties in high salt concentration and over a broad pH range, which coupled with the low cost, environmentally friendly nature and facile synthesis underscores its potential in treating nuclear waste.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2022

Thickness- and Twist-Angle-Dependent Interlayer Excitons in Metal Monochalcogenide Heterostructures

Interlayer excitons, or bound electron-hole pairs whose constituent quasiparticles are located in distinct stacked semiconducting layers, are being intensively studied in heterobilayers of two dimensional semiconductors. They owe their existence to an intrinsic type-II band alignment between both layers that convert these into p-n junctions. Here, we unveil a pronounced interlayer exciton (IX) in heterobilayers of metal monochalcogenides, namely gamma-InSe on epsilon-GaSe, whose pronounced emission is adjustable just by varying their thicknesses given their number of layers dependent direct bandgaps. Time-dependent photoluminescense spectroscopy unveils considerably longer interlayer exciton lifetimes with respect to intralayer ones, thus confirming their nature. The linear Stark effect yields a bound electron-hole pair whose separation d is just (3.6 ± 0.1) Å with d being very close to d Se = 3.4 Å which is the calculated interfacial Se separation. The envelope of IX is twist angle dependent and describable by superimposed emissions that are nearly equally spaced in energy, as if quantized due to localization induced by the small moiré periodicity. Furthermore, these heterostacks are characterized by extremely flat interfacial valence bands making them prime candidates for the observation of magnetism or other correlated electronic phases upon carrier doping.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗