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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Multiphase separation of copper nanowires

Here, this communication reports a new method to purify copper nanowires with nearly 100% yield from undesired copper nanoparticle side-products formed during batch processes of copper nanowire synthesis. Also, this simple separation method can yield large quantities of long, uniform, high-purity copper nanowires to meet the requirements of nanoelectronics applications as well as provide an avenue for purifying copper nanowires in the industrial scale synthesis of copper nanowires, a key step for commercialization and application of nanowires.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Intrinsic magnetism and spontaneous band gap opening in bilayer silicene and germanene

It has been long sought to create magnetism out of simple non-magnetic materials, such as silicon and germanium. Here we show that intrinsic magnetism exists in bilayer silicene and germanene with no need to cut, etch, or dope. Unlike bilayer graphene, strong covalent interlayer bonding formed in bilayer silicene and germanene breaks the original π-bonding network of each layer, leaving the unbonded electrons unpaired and localized to carry magnetic moments. These magnetic moments then couple ferromagnetically within each layer while antiferromagnetically across two layers, giving rise to an infinite magnetic sheet with structural integrity and magnetic homogeneity. Furthermore, this unique magnetic ordering results in fundamental band gaps of 0.55 eV and 0.32 eV for bilayer silicene and germanene, respectively. The integration of intrinsic magnetism and spontaneous band gap opening makes bilayer silicene and germanene attractive for future nanoelectronics as well as spin-based computation and data storage.

Wang, Xinquan↗
DOE OSTI2017

Homo-endotaxial one-dimensional Si nanostructures

One-dimensional (1D) nanostructures are highly sought after, both for their novel electronic properties as well as for their improved functionality. However, due to their nanoscale dimensions, these properties are significantly affected by the environment in which they are embedded. Here in this paper, we report on the creation of 1D homo-endotaxial Si nanostructures, i.e. 1D Si nanostructures with a lattice structure that is uniquely different from the Si diamond lattice in which they are embedded. We use scanning tunneling microscopy and spectroscopy, scanning transmission electron microscopy, density functional theory, and conductive atomic force microscopy to elucidate their formation and properties. Depending on kinetic constraints during growth, they can be prepared as endotaxial 1D Si nanostructures completely embedded in crystalline Si, or underneath a stripe of amorphous Si containing a large concentration of Bi atoms. Lastly, these homo-endotaxial 1D Si nanostructures have the potential to be useful components in nanoelectronic devices based on the technologically mature Si platform.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Machine learning a bond order potential model to study thermal transport in WSe 2 nanostructures

Here, nanostructures of transition metal di-chalcogenides (TMDCs) exhibit exotic thermal, chemical and electronic properties, enabling diverse applications from thermoelectrics and catalysis to nanoelectronics. The thermal properties of these nanoscale TMDCs are of particular interest for thermoelectric applications. Thermal transport studies on nanotubes and nanoribbons remain intractable to first principles calculations whereas existing classical molecular models treat the two chalcogen layers in a monolayer with different atom types; this imposes serious limitations in studying multi-layered TMDCs and dynamical phenomena such as nucleation and growth. Here, we overcome these limitations using machine learning (ML) and introduce a bond order potential (BOP) trained against first principles training data to capture the structure, dynamics, and thermal transport properties of a model TMDC such as WSe 2 . The training is performed using a hierarchical objective genetic algorithm workflow to accurately describe the energetics, as well as thermal and mechanical properties of a free-standing sheet. As a representative case study, we perform molecular dynamics simulations using the ML-BOP model to study the structure and temperature-dependent thermal conductivity of WSe 2 tubes and ribbons of different chiralities. We observe slightly higher thermal conductivities along the armchair direction than zigzag for WSe 2 monolayers but the opposite effect for nanotubes, especially of smaller diameters. We trace the origin of these differences to the anisotropy in thermal transport and the restricted momentum selection rules for phonon–phonon Umpklapp scattering. The developed ML-BOP model is of broad interest and will facilitate studies on nucleation and growth of low dimensional WSe 2 structures as well as their transport properties for thermoelectric and thermal management applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Unusual electrical conductivity driven by localized stoichiometry modification at vertical epitaxial interfaces

Precise control of lattice mismatch accommodation and interfacial cation diffusion is critical to modulate correlated functionalities in epitaxial heterostructures, particularly when the interface composition is positioned near a compositional phase transition boundary. Here we select La 1-x Sr x MnO 3 (LSMO) as a prototype phase transition oxide and establish vertical epitaxial interfaces with NiO for exploring the strong interplay between strain accommodation, stoichiometry modification, and localized electron transport across the interface. It is found that localized stoichiometry modification overcomes the dead layer problem plaguing LSMO and leads to strongly directional conductivity, as manifested by a more than three orders of magnitude difference between out-of-plane and in-plane conductivity. Comprehensive atomic scale structural characterization and transport measurements reveal that this emerging behavior is created by a compositional change produced by preferential cation diffusion that pushes the LSMO phase transition from insulating into metallic within an ultrathin interface region. This study explores the nature of unusual electrical conductivity at vertical epitaxial interfaces and highlights the beneficial role of controllable cation diffusion that enables emerging functionalities for a broad range of potential applications such as memristors, spintronic devices, and novel nanoelectronic devices using strongly correlated materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Imidazole-graphyne: a new 2D carbon nitride with a direct bandgap and strong IR refraction

Six-membered rings are common building blocks of many carbon structures. Recent studies have shown that penta-graphene composed of five-membered carbon rings have properties very different from that of graphene. This has motivated the search for new carbon structures. Among this is cp-graphyne, composed of carbon pentagons and bridged by acetylenic linkers. However, the bandgap of cp-graphyne, like that of graphene, is zero, making it unsuitable for applications in electronics. Herein, we show that a new two-dimensional (2D) carbon nitride structure formed by assembling the five-membered imidazole molecules with acetylenic linker can overcome this limitation. Named ID-GY, this new material not only has a direct band gap of 1.10 eV, but it is dynamically and mechanically stable and can withstand temperatures up to 1200 K. In addition, due to its porous and anisotropic geometry, the Young's modulus of ID-GY along the diagonal direction is lower than that of most 2D materials reported previously. Equally important, ID-GY exhibits strong refraction near infrared (IR) and has potential for applications in nanoelectronics and optical devices. These results, based on density functional theory, can stimulate experimental studies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Manipulating ferroelectric behaviors via electron-beam induced crystalline defects

Ferroelectric nanoplates are attractive for applications in nanoelectronic devices. Defect engineering has been an effective way to control and manipulate ferroelectric properties in nanoscale devices. Defects can act as pinning centers for ferroelectric domain wall motion, altering the switching properties and domain dynamics of ferroelectrics. However, there is a lack of detailed investigation on the interactions between defects and domain walls in ferroelectric nanoplates due to the limitation of previous characterization techniques, which impedes the development of defect engineering in ferroelectric nanodevices. In this study, we applied in situ biasing transmission electron microscopy to explore how dislocation loops, which were judiciously introduced into barium titanate nanoplates via electron beam irradiation, affect the motion of ferroelectric domain walls. The results show that the motion was dramatically suppressed by these localized defects, because of the local strain fields induced by the defects. Additionally, the pinning effect can be further enhanced by multiple domain walls embedded with defect arrays. These results indicate the possibility of manipulating domain switching in ferroelectric nanoplates via the electron beam.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Tailorable multifunctionalities in ultrathin 2D Bi-based layered supercell structures

Two-dimensional (2D) materials with robust ferromagnetic behavior have attracted great interest because of their potential applications in next-generation nanoelectronic devices. Aside from graphene and transition metal dichalcogenides, Bi-based layered oxide materials are a group of prospective candidates due to their superior room-temperature multiferroic response. In this work, an ultrathin Bi 3 Fe 2 Mn 2 O 10+δ layered supercell (BFMO322 LS) structure was deposited on an LaAlO 3 (LAO) (001) substrate using pulsed laser deposition. Microstructural analysis suggests that a layered supercell (LS) structure consisting of two-layer-thick Bi–O slabs and two-layer-thick Mn/Fe–O octahedra slabs was formed on top of the pseudo-perovskite interlayer (IL). A robust saturation magnetization value of 129 and 96 emu cm -3 is achieved in a 12.3 nm thick film in the in-plane (IP) and out-of-plane (OP) directions, respectively. The ferromagnetism, dielectric permittivity, and optical bandgap of the ultrathin BFMO films can be effectively tuned by thickness and morphology variation. In addition, the anisotropy of all ultrathin BFMO films switches from OP dominating to IP dominating as the thickness increases. This study demonstrates the ultrathin BFMO film with tunable multifunctionalities as a promising candidate for novel integrated spintronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Manipulating topological Hall-like signatures by interface engineering in epitaxial ruthenate/manganite heterostructures

Topologically protected non-trivial spin textures (e.g. skyrmions) give rise to a novel phenomenon called the topological Hall effect (THE) and have promising implications in future energy-efficient nanoelectronic and spintronic devices. Here, we have studied the Hall effect in SrRuO 3 /La 0.42 Ca 0.58 MnO 3 (SRO/LCMO) bilayers. Our investigation suggests that pure SRO has hard and soft magnetic characteristics but the anomalous Hall effect (AHE) in SRO is governed by the high coercivity phase. Here, we have shown that the proximity effect of a soft magnetic LCMO on SRO plays a critical role in interfacial magnetic coupling and transport properties in SRO. Upon reducing the SRO thickness in the bilayer, the proximity effect becomes the dominant feature, enhancing the magnitude and temperature range of THE-like signatures. The THE-like features in bilayers can be explained by a diffusive Berry phase transition model in the presence of an emergent magnetic state due to interface coupling. This work provides an alternative understanding of THE-like signatures and their manipulation in SRO-based heterostructures, bilayers and superlattices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2013

Creation of a two-dimensional electron gas and conductivity switching of nanowires at the LaAlO{sub 3}/SrTiO{sub 3} interface grown by 90{sup o} off-axis sputtering

Two-dimensional electron gas (2DEG) formed at the interface between two oxide band-insulators LaAlO{sub 3} and SrTiO{sub 3} raises the possibility to develop oxide nanoelectronics. Here, we report the creation of a 2DEG at the LaAlO{sub 3}/SrTiO{sub 3} heterointerfaces grown by 90° off-axis sputtering which allows uniform films over a large area. The electrical transport properties of the LaAlO{sub 3}/SrTiO{sub 3} heterointerface are similar to those grown by pulsed laser deposition. We also demonstrate room-temperature conductive probe-based switching of quasi-one-dimensional structures. This work demonstrates that a scalable growth process can be used to create the two-dimensional electron gas system at oxide heterointerfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Giant tunneling magnetoresistance in silicene

We have theoretically studied ballistic electron transport in silicene under the manipulation of a pair of ferromagnetic gate. Transport properties like transmission and conductance have been calculated by the standard transfer matrix method for parallel and antiparallel magnetization configurations. It is demonstrated here that, due to the stray field-induced wave-vector filtering effect, remarkable difference in configuration-dependent transport gives rise to a giant tunneling magnetoresistance. In combination with the peculiar buckled structure of silicene and its electric tunable energy gap, the receiving magnetoresistance can be efficiently modulated by the externally-tunable stray field, electrostatic potential, and staggered sublattice potential, providing some flexible strategies to construct silicene-based nanoelectronic device.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Advanced performance and scalability of Si nanowire field-effect transistors analyzed using noise spectroscopy and gamma radiation techniques

High-quality Si nanowire field effect transistors (FETs) were fabricated using thermal nanoimprint and chemical wet etching technologies. FET structures of different lengths demonstrate high carrier mobility with values of about 750 cm{sup 2}/Vs and low volume densities of active traps in the dielectric layers of 5 × 10{sup 17} cm{sup −3} eV{sup −1}. We investigated the transport properties of these n-type channel structures using low-frequency noise spectroscopy before and after gamma radiation treatment. Before gamma irradiation, FET structures with lengths of less than 4 μm exhibited noise from contact regions with 1/(L{sup 2}) dependence for the relative 1/f noise. After gamma radiation, the spectra reflected the priority of channel noise with 1/L dependence for all samples. The transport characteristics show that the fabricated nanowire FETs improved scalability, decreased parameter scattering, and increased stability after treatment. The results demonstrate that these nanowire FETs are promising for nanoelectronic and biosensor applications due to the cost-efficient technology and advanced performance of FETs with improved stability and reliability.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Diffusion of n-type dopants in germanium

Germanium is being actively considered by the semiconductor community as a mainstream material for nanoelectronic applications. Germanium has advantageous materials properties; however, its dopant-defect interactions are less understood as compared to the mainstream material, silicon. The understanding of self- and dopant diffusion is essential to form well defined doped regions. Although p-type dopants such as boron exhibit limited diffusion, n-type dopants such as phosphorous, arsenic, and antimony diffuse quickly via vacancy-mediated diffusion mechanisms. In the present review, we mainly focus on the impact of intrinsic defects on the diffusion mechanisms of donor atoms and point defect engineering strategies to restrain donor atom diffusion and to enhance their electrical activation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Characterization of metal contacts for two-dimensional MoS{sub 2} nanoflakes

While layered materials are increasingly investigated for their potential in nanoelectronics, their functionality and efficiency depend on charge injection into the materials via metallic contacts. This work explores the characteristics of different metals (aluminium, tungsten, gold, and platinum) deposited on to nanostructured thin films made of two-dimensional (2D) MoS{sub 2} flakes. Metals are chosen based on their work functions relative to the electron affinity of MoS{sub 2}. It is observed, and analytically verified that lower work functions of the contact metals lead to smaller Schottky barrier heights and consequently higher charge carrier injection through the contacts.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2013

Doping suppression and mobility enhancement of graphene transistors fabricated using an adhesion promoting dry transfer process

We present the facile dry transfer of graphene synthesized via chemical vapor deposition on copper film to a functional device substrate. High quality uniform dry transfer of graphene to oxidized silicon substrate was achieved by exploiting the beneficial features of a poly(4-vinylphenol) adhesive layer involving a strong adhesion energy to graphene and negligible influence on the electronic and structural properties of graphene. The graphene field effect transistors (FETs) fabricated using the dry transfer process exhibit excellent electrical performance in terms of high FET mobility and low intrinsic doping level, which proves the feasibility of our approach in graphene-based nanoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing

Conformal coating of metal layers on three-dimensional structures is essential for advanced electronic devices such as storage elements, transistors, and sensors. The quality of atomic layer deposited platinum on oxide surfaces was enhanced by adding pre-deposition pulses of trimethylaluminum (TMA) for improved wetting. With an optimal number of TMA pre-pulses, a 6 nm thick Pt film was perfectly coalesced in contrast to only Pt island formation without TMA pre-pulses. A Pt gate all around Ge/Si nanowire field effect transistor was realized highlighting the potential of this approach for efficient deposition of Pt on 3D nanoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m{sup −1} K{sup −1}, is lower than the bulk basal plane value (390 W m{sup −1} K{sup −1}) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Tuning spin transport properties and molecular magnetoresistance through contact geometry

Molecular spintronics seeks to unite the advantages of using organic molecules as nanoelectronic components, with the benefits of using spin as an additional degree of freedom. For technological applications, an important quantity is the molecular magnetoresistance. In this work, we show that this parameter is very sensitive to the contact geometry. To demonstrate this, we perform ab initio calculations, combining the non-equilibrium Green's function method with density functional theory, on a dithienylethene molecule placed between spin-polarized nickel leads of varying geometries. We find that, in general, the magnetoresistance is significantly higher when the contact is made to sharp tips than to flat surfaces. Interestingly, this holds true for both resonant and tunneling conduction regimes, i.e., when the molecule is in its “closed” and “open” conformations, respectively. We find that changing the lead geometry can increase the magnetoresistance by up to a factor of ∼5. We also introduce a simple model that, despite requiring minimal computational time, can recapture our ab initio results for the behavior of magnetoresistance as a function of bias voltage. This model requires as its input only the density of states on the anchoring atoms, at zero bias voltage. We also find that the non-resonant conductance in the open conformation of the molecule is significantly impacted by the lead geometry. As a result, the ratio of the current in the closed and open conformations can also be tuned by varying the geometry of the leads, and increased by ∼400%.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗