Design of phase-lock oscillator circuits section report no. 8-566
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Rechtin, E.↗
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Minimum bandwidths of phase lock loops using crystal-controlled oscillators
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Victor, W. K.↗
A phase-lock receiver for the arraying of independently directed antennas
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Schrader, J. H.↗
Digital communication and tracking - A phase-locked analysis program
Computer program for analysis or design of carrier tracking or clock tracking loops of Deep Space Instrumentation Facility receiver
RECEIVER↗
Cycle slipping in first order phase locked loops
Dynamic model for cycle slipping in first order locked loops
Hess, D. T.↗
Third-order phase-locked loop receiver
Third-order extension to present second-order systems extends their Doppler tracking capabilities. It widens receiver pull-in range, decreases pull-in time, lowers voltage-controlled oscillator (VCO) noise (determining when no signal is present), and lessens susceptibility to VCO drift.
Crow, R. B.↗
Narrow band binary phase locked loops
Very high Q digital filtering circuits for audio frequencies in the range of 1Hz to 15 KHz are implemented in simple CMOS hardware using a binary local reference clock frequency. The circuits have application to VLF navigation receivers and other narrow band audio range tracking problems.
Burhans, R. W.↗
Discovery of phase-locked variable polarization in an RS Canum Venaticorum-like star, HR 5110
Using measurements on 79 nights in 1980 January-August, it is established that the polarization in the ultraviolet (U band) varies synchronously on the known binary period of 2.6132 days, with a peak-to-peak amplitude of 0.03%. The pattern is mainly second harmonic in character, as typical of binary star examples such as Algol and Upsilon Her. Reflection by the cooler star, by a plasma concentration, or both, is suggested. The scale of the polarization seems to be consistent with Rayleigh scattering by neutral hydrogen on the cooler star, and a roughly lambda to the -4th wavelength dependence should be searched for. The QU curve suggests a sizeable inclination for the system, of about 45 deg, but this is preliminary. Separately, a possible weak periodicity might be present on a subsidiary period, conceivably related to a rotating star spot.
Barbour, M. S.↗
Far-field distributions of semiconductor phase-locked arrays with multiple contacts
Experimental results on far-field patterns of semiconductor laser arrays with multiple contacts are reported. It is found that, by tailoring the distribution of the currents through the array elements, narrow single-lobe patterns, which are more useful in most applications, can be obtained from arrays that usually operate in a double-lobe mode. A diffraction-limited 1.8 deg-wide far field pattern was obtained from a three-element array.
Katz, J.↗
Recent developments in monolithic phase-locked semiconductor laser arrays
Coherent combination of the power of several semiconductor lasers fabricated on the same substrate has been the subject of an intense research effort in recent years, the main motivation being to obtain higher power levels than those available from a single laser in a stable radiation pattern. Best results reported so far include 2.6 Watts CW emitted power and less than 1 deg far-field angle (in the array plane) in arrays where all the lasers are electrically connected in parallel. A different type of coherent array, where each element has a separate contact, has been recently demonstrated. While requiring the more complex two-level metallization technology, applying a separate contact to each laser provides an additional degree of freedom in the design and the operation of monolithic arrays. The separate contacts can be employed to tailor the near-field and far-field distributions and to compensate for device-to-device nonuniformities. Furthermore, the control of the currents of the array elements allows the performance of a variety of other functions, such as beam scanning, spectral mode control, wavelength tuning and control of the mutual coherence between array elements.
Katz, J.↗
Recent developments in monolithic phase-locked semiconductor laser arrays
Coherent combination of the power of several semiconductor lasers fabricated on the same substrate has been the subject of an intense research effort in recent years, the main motivation being to obtain higher power levels than those available from a single laser in a stable radiation pattern. Best results reported so far include 2.6 watts CW emitted power and less than 1 deg far-field angle (in the array plane) in arrays where all the lasers are electrically connected in parallel. A different type of coherent array, where each element has a separate contact, has been recently demonstrated. While requiring the more complex two-level metallization technology, applying a separate contact to each laser provides an additional degree of freedom in the design and the operation of monolithic arrays. The separate contacts can be employed to tailor the near-field and far-field distributions and to compensate for device-to-device nonuniformities. Furthermore, the control of the currents of the array elements allows the performance of a variety of other functions, such as beam scanning, spectral mode control, wavelength tuning and control of the mutual coherence between array elements.
Katz, J.↗
Direct analysis of gain-guided phase-locked semiconductor laser arrays
A method for analyzing arbitrary one-dimensional waveguides is described and applied to find the lateral modes of gain-guided laser arrays directly, without the need for a coupled-mode approximation. Detailed results are given for a four-element array for which experimental results are available, and the effect of varying device parameters on the relative gains of the modes is considered. The results show differences between gain-guided and real-index guided arrays which are not evident in prior analyses.
Marshall, W. K.↗
Investigation of PTFE transfer films by infrared emission spectroscopy and phase-locked ellipsometry
When a PTFE sheet was rubbed unidirectionally over a smooth surface of stainless steel an essentially monomolecular transfer film was formed. By ellipsometric and emission infrared spectroscopic techniques it was shown that the film was 10 to 15 A thick and birefringent. From the intensity differences of infrared bands obtained with a polarizer passing radiation polarized in mutually perpendicular planes, it was possible to deduce transfer film orientation with the direction of rubbing. After standing in air for several weeks the transfer films apparently increased in thickness by as much as threefold. At the same time both the index of refraction and the absorption index decreased. Examination of the surfaces by optical and electron microscopies showed that the films had become porous and flaky. These observations were consistent with previous tribological measurements. The coefficients of friction decreased with the formation of the transfer film but increased again as the film developed breaks. The applicability of the ellipsometric and polarized infrared emission techniques to the identification of monomolecular tribological transfer films of polymers such as PTFE has been demonstrated.
Lauer, James L.↗
Dynamic characteristics of far-field radiation of current modulated phase-locked diode laser arrays
A versatile and powerful streak camera/frame grabber system for studying the evolution of the near and far field radiation patterns of diode lasers was assembled and tested. Software needed to analyze and display the data acquired with the steak camera/frame grabber system was written and the total package used to record and perform preliminary analyses on the behavior of two types of laser, a ten emitter gain guided array and a flared waveguide Y-coupled array. Examples of the information which can be gathered with this system are presented.
Elliott, R. A.↗
Phase-Length Optical Phase-Locked-Loop Sensor (PLOPS)
PLOPS system designed to provide high-resolution measurement of change in optical length from optical-system source to any optical reflector, including diffuse reflector. Serves as adjustable optical ruler, providing high resolution in measurements of small and large changes in distance to target. Use is broad and includes most measurement situations requiring information on length, vibration, and their derivatives. Applications include building dynamics, remote sensing of vibrations in such systems as turbine-based machinery, monitoring of structural dynamics, noncontacting sensing of surface contours, measurement of large strains as in earthquake monitoring, measurement of atmospheric dynamics and turbulence, high-resolution sensing of humidity, detection of surface acoustic waves by optical microscopy, and related areas.
Heyman, Joseph S.↗
Investigation of PTFE transfer films by infrared emission spectroscopy and phase-locked ellipsometry
When a PTFE sheet was rubbed unidirectionally over a smooth surface of stainless steel an essentially monomolecular transfer film was formed. by ellipsometric and emission infrared spectroscopic techniques it was shown that the film was 10 to 15 A thick and birefringent. From the intensity differences of infrared bands obtained with a polarizer passing radiation polarized in mutually perpendicular planes, it was possible to deduce transfer film orientation with the direction of rubbing. After standing in air for several weeks the transfer films apparently increased in thickness by as much as threefold. At the same time both the index of refraction and the absorption index decreased. Examination of the surfaces by optical and electron microscopies showed that the films had become porous and flaky. These observations were consistent with previous tribological measurements. The coefficients of friction decreased with the formation of the transfer film but increased again as the film developed breaks. The applicability of the ellipsometric and polarized infrared emission techniques to the identification of monomolecular tribological transfer films of polymers such as PTFE has been demonstrated.
Lauer, James L.↗
Stable CW Single-Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking
Previously, single-frequency semiconductor laser operation using fiber Bragg gratings (FBG) has been achieved by two methods: (1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element; (2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback.
Duerksen, Gary L.↗
Stable CW Single-Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking
Previously, single-frequency semiconductor laser operation using fiber Bragg gratings has been achieved by two methods: 1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element'; 2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback. We coupled a nominal 935 run-wavelength Fabry-Perot laser diode to an ultra narrow band (18 pm) FBG. When tuned by varying its temperature, the laser wavelength is pulled toward the centerline of the Bragg grating, and the spectrum of the laser output is seen to fall into three discrete stability regimes as measured by the side-mode suppression ratio.
Duerksen, Gary L.↗