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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS2017

4-Pixel Heterodyne Receiver at 1.9 THz using a CMOS Spectrometer

We present results from a 4x1-pixel 1.9 THz heterodyne array for the astrophysically important [CII] spectral line. A 4-pixel multiplier chain at 1.9 THz, with a compact spacing of 5 mm, is used as an LO. Receiver performance is verified by y-factor measurements with measured sensitivities of 900 K. Finally, using a coherent source near the target frequency of 1.9 THz, we down convert to baseband and measure spectra with both an IBOB and a new CMOS-based spectrometer. The CMOS spectrometer provides several advantages over more traditional spectrometers because of its compact size and low power consumption. This receiver prototype is easily scalable to other frequencies and larger focal plane arrays. Furthermore, because of its compact configuration, it can be easily packaged for orbital or sub-orbital missions.

Mehdi, Imran↗
NASA NTRS1993

Imer-product array processor for retrieval of stored images represented by bipolar binary (+1,-1) pixels using partial input trinary pixels represented by (+1,-1)

An inner-product array processor is provided with thresholding of the inner product during each iteration to make more significant the inner product employed in estimating a vector to be used as the input vector for the next iteration. While stored vectors and estimated vectors are represented in bipolar binary (1,-1), only those elements of an initial partial input vector that are believed to be common with those of a stored vector are represented in bipolar binary; the remaining elements of a partial input vector are set to 0. This mode of representation, in which the known elements of a partial input vector are in bipolar binary form and the remaining elements are set equal to 0, is referred to as trinary representation. The initial inner products corresponding to the partial input vector will then be equal to the number of known elements. Inner-product thresholding is applied to accelerate convergence and to avoid convergence to a negative input product.

Liu, Hua-Kuang↗
NASA NTRS2010

Fabrication of an Absorber-Coupled MKID Detector and Readout for Sub-Millimeter and Far-Infrared Astronomy

We have fabricated absorber-coupled microwave kinetic inductance detector (MKID) arrays for sub-millimeter and farinfrared astronomy. Each detector array is comprised of lambda/2 stepped impedance resonators, a 1.5μm thick silicon membrane, and 380μm thick silicon walls. The resonators consist of parallel plate aluminum transmission lines coupled to low impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The Al transmission lines simultaneously act to absorb optical power and are designed to have a surface impedance and filling fraction so as to match the impedance of free space. Our novel fabrication techniques demonstrate high fabrication yield of MKID arrays on large single crystal membranes and sub-micron front-to-back alignment of the microstrip circuit.

far-infrared↗
NASA NTRS2010

Fabrication of an Absorber-Coupled MKID Detector and Readout for Sub-Millimeter and Far-Infrared Astronomy

We have fabricated absorber-coupled microwave kinetic inductance detector (MKID) arrays for sub-millimeter and far-infrared astronomy. Each detector array is comprised of lambda/2 stepped impedance resonators, a 1.5 micrometer thick silicon membrane, and 380 micrometer thick silicon walls. The resonators consist of parallel plate aluminum transmission lines coupled to low impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The Al transmission lines simultaneously act to absorb optical power and are designed to have a surface impedance and filling fraction so as to match the impedance of free space. Our novel fabrication techniques demonstrate high fabrication yield of MKID arrays on large single crystal membranes and sub-micron front-to-back alignment of the microstrip circuit.

Brown, Ari-David↗
NASA NTRS2002

Multi-Band GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Arrays

The GaAs/AlGaAs based Quantum Well Infrared Photodetectors (QWIPs) afford greater flexibility than the usual extrinsically doped semiconductor IR detectors because the wavelength of the peak response and cutoff can be continuously tailored over any wavelength between 6-20 micrometers. The spectral band width of these detectors can be tuned from narrow (DELTA)lamba/lamba approx. 10 %)) to wide (DELTA)lamba/lamba approx. 50 %) allowing various applications. Also, QWIP offers multi-color infrared cameras which is capable of simultaneously acquiring images in different infrared bands. Each pixel of such array consists of vertically stacked, independently readable, QWIP detectors sensitive in different narrow infrared bands. In this article, we discuss the development and results of the 640 x 512 dual-band and four-band QWIP FPAs.

Bandara, S. V.↗
NASA NTRS2012

Fabrication of an Absorber-Coupled MKID Detector

Absorber-coupled microwave kinetic inductance detector (MKID) arrays were developed for submillimeter and far-infrared astronomy. These sensors comprise arrays of lambda/2 stepped microwave impedance resonators patterned on a 1.5-mm-thick silicon membrane, which is optimized for optical coupling. The detector elements are supported on a 380-mm-thick micro-machined silicon wafer. The resonators consist of parallel plate aluminum transmission lines coupled to low-impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The transmission lines simultaneously act to absorb optical power and employ an appropriate surface impedance and effective filling fraction. The fabrication techniques demonstrate high-fabrication yield of MKID arrays on large, single-crystal membranes and sub-micron front-to-back alignment of the micro strip circuit. An MKID is a detector that operates upon the principle that a superconducting material s kinetic inductance and surface resistance will change in response to being exposed to radiation with a power density sufficient to break its Cooper pairs. When integrated as part of a resonant circuit, the change in surface impedance will result in a shift in its resonance frequency and a decrease of its quality factor. In this approach, incident power creates quasiparticles inside a superconducting resonator, which is configured to match the impedance of free space in order to absorb the radiation being detected. For this reason MKIDs are attractive for use in large-format focal plane arrays, because they are easily multiplexed in the frequency domain and their fabrication is straightforward. The fabrication process can be summarized in seven steps: (1) Alignment marks are lithographically patterned and etched all the way through a silicon on insulator (SOI) wafer, which consists of a thin silicon membrane bonded to a thick silicon handle wafer. (2) The metal microwave circuitry on the front of the membrane is patterned and etched. (3) The wafer is then temporarily bonded with wafer wax to a Pyrex wafer, with the SOI side abutting the Pyrex. (4) The silicon handle component of the SOI wafer is subsequently etched away so as to expose the membrane backside. (5) The wafer is flipped over, and metal microwave circuitry is patterned and etched on the membrane backside. Furthermore, cuts in the membrane are made so as to define the individual detector array chips. (6) Silicon frames are micromachined and glued to the silicon membrane. (7) The membranes, which are now attached to the frames, are released from the Pyrex wafer via dissolution of the wafer wax in acetone.

Brown, Ari↗
NASA NTRS1996

Mapping Pixel Windows To Vectors For Parallel Processing

Mapping performed by matrices of transistor switches. Arrays of transistor switches devised for use in forming simultaneous connections from square subarray (window) of n x n pixels within electronic imaging device containing np x np array of pixels to linear array of n(sup2) input terminals of electronic neural network or other parallel-processing circuit. Method helps to realize potential for rapidity in parallel processing for such applications as enhancement of images and recognition of patterns. In providing simultaneous connections, overcomes timing bottleneck or older multiplexing, serial-switching, and sample-and-hold methods.

Duong, Tuan A.↗
NASA NTRS2004

Progress Towards High-Sensitivity Arrays of Detectors of Sub-mm Radiation Using Superconducting Tunnel Junctions with Integrated Radio Frequency Single-Electron Transistors

For high resolution imaging and spectroscopy in the FIR and submillimeter, space observatories will demand sensitive, fast, compact, low-power detector arrays with 104 pixels and sensitivity less than 10(exp -20) W/Hz(sup 0.5). Antenna-coupled superconducting tunnel junctions with integrated rf single-electron transistor readout amplifiers have the potential for achieving this high level of sensitivity, and can take advantage of an rf multiplexing technique. The device consists of an antenna to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure current through junctions contacting the absorber. We describe optimization of device parameters, and results on fabrication techniques for producing devices with high yield for detector arrays. We also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

Stevenson, T. R.↗
NASA NTRS2004

Improved Discrete Approximation of Laplacian of Gaussian

An improved method of computing a discrete approximation of the Laplacian of a Gaussian convolution of an image has been devised. The primary advantage of the method is that without substantially degrading the accuracy of the end result, it reduces the amount of information that must be processed and thus reduces the amount of circuitry needed to perform the Laplacian-of- Gaussian (LOG) operation. Some background information is necessary to place the method in context. The method is intended for application to the LOG part of a process of real-time digital filtering of digitized video data that represent brightnesses in pixels in a square array. The particular filtering process of interest is one that converts pixel brightnesses to binary form, thereby reducing the amount of information that must be performed in subsequent correlation processing (e.g., correlations between images in a stereoscopic pair for determining distances or correlations between successive frames of the same image for detecting motions). The Laplacian is often included in the filtering process because it emphasizes edges and textures, while the Gaussian is often included because it smooths out noise that might not be consistent between left and right images or between successive frames of the same image.

Shuler, Robert L., Jr.↗
DOE OSTI2025

Ultra‐Flexible Pixelated Perovskite Photodetectors Enabled by Honeycomb Polymer Grids for High‐Resolution Imaging

Abstract A nature‐inspired fabrication method based on a photolithography‐free flexible polymer grid is reported for high‐resolution pixelation of perovskite photodiode arrays with exceptional mechanical ductility and a morphology resembling that of natural compound eyes. The resulting pixelated perovskite photosensitive layer has a ≈1 µm pixel size with 2000 Pixels per inch (PPI) resolution when fully assembled as a photodetector array, delivering a detectivity of >10 13 Jones while providing cross‐talk free imaging. Using a polymer grid effectively releases stress on the perovskite platform, greatly increasing the mechanical agility of the otherwise brittle perovskite film. This novel fabrication methodology and device design offer new possibilities for applications in robotics, biomedical imaging, and virtual and augmented reality.

Zheng, Ding [Department of Chemistry and the Mater↗
NASA NTRS2012

Array Technology for Terahertz Imaging

Heterodyne terahertz (0.3 - 3THz) imaging systems are currently limited to single or a low number of pixels. Drastic improvements in imaging sensitivity and speed can be achieved by replacing single pixel systems with an array of detectors. This paper presents an array topology that is being developed at the Jet Propulsion Laboratory based on the micromachining of silicon. This technique fabricates the array's package and waveguide components by plasma etching of silicon, resulting in devices with precision surpassing that of current metal machining techniques. Using silicon increases the versatility of the packaging, enabling a variety of orientations of circuitry within the device which increases circuit density and design options. The design of a two-pixel transceiver utilizing a stacked architecture is presented that achieves a pixel spacing of 10mm. By only allowing coupling from the top and bottom of the package the design can readily be arrayed in two dimensions with a spacing of 10mm x 18mm.

Terahertz↗
NASA NTRS1985

Development of optimized detector/spectrophotometer technology for low background space astronomy missions

This program was directed towards a better understanding of some of the important factors in the performance of infrared detector arrays at low background conditions appropriate for space astronomy. The arrays were manufactured by Aerojet Electrosystems Corporation, Azusa. Two arrays, both bismuth doped silicon, were investigated: an AMCID 32x32 Engineering mosiac Si:Bi accumulation mode charge injection device detector array and a metal oxide semiconductor/field effect transistor (MOS-FET) switched array of 16x32 pixels.

Jones, B.↗
NASA NTRS1992

Observation of alloy solidification using high-speed video

A high-speed video instrumentation system was used to observe solidification of undercooled Ti-51 at. pct Al. The camera system developed by Battelle is capable of operation at rates up to 12,000 frames per second. The system digitizes and stores video images acquired by a 64 x 64 pixel silicon photodiode array. In a joint effort with Vanderbilt University the camera was used to observe three transformations of the undercooled alloys, using containerless processing by electromagnetic levitation. The first was solidification where nucleation was induced at an undercooling of 9 percent Tl, where Tl is the liquidus temperature of the alloy, and the second was solidification where nucleation was spontaneous at an undercooling of 15 percent Tl. The third event was a solid-state nucleation and growth transformation following the solidification at an undercooling of 15 percent Tl.

Bassler, B. T.↗
NASA NTRS1998

A Search for a Near-Infrared Halo Around NGC 4565

We present a near-infrared (3.5-5 micron) search for the integrated emission from low-mass stars and/or brown dwarfs in the halo of the nearby edge-on spiral galaxy NGC 4565. The observation was made with a liquid-helium-cooled rocket-borne telescope using a 256 x 256 InSb array with a pixel scale of 17". Images of NGC 4565 were successfully obtained with sensitivity near the natural background limit. Our search reveals no evidence of a faint halo around the galaxy, in contrast with the previous reports of a halo around NGC 5907. The lower limit of the mass-to-light ratio for the halo of NGC 4565 is 260 (2 delta) in solar units at 3.5-5 microns. This implies that hydrogen-burning stars do not contribute significantly to the mass of the dark halo in NGC 4565.

Uemizu, Kazunori↗
NASA NTRS2002

The AstroBiology Explorer (ABE) MIDEX Mission Concept: Identifying Organic Molecules in Space

The Astrobiology Explorer (ABE) is a MIDEX mission concept, currently under Concept Phase A study at NASA's Ames Research Center in collaboration with Ball Aerospace & Technologies, Corp., and managed by NASA's Jet Propulsion Laboratory. ABE will conduct infrared spectroscopic observations to address important problems in astrobiology, astrochemistry, and astrophysics. The core observational program would make fundamental scientific progress in understanding the distribution, identity, and evolution of ices and organic matter in dense molecular clouds, young forming stellar systems, stellar outflows, the general diffuse ISM, HII regions, Solar System bodies, and external galaxies. The ABE instrument concept includes a 0.6 m aperture Ritchey-Chretien telescope and three moderate resolution (R = 2000-3000) spectrometers together covering the 2.5-20 micron spectral region. Large format (1024 x 1024 pixel) IR detector arrays will allow each spectrometer to cover an entire octave of spectral range per exposure without any moving parts. The telescope will be cooled below 50 K by a cryogenic dewar shielded by a sunshade. The detectors will be cooled to approx. 7.5 K by a solid hydrogen cryostat. The optimum orbital configuration for achieving the scientific objectives of the ABE mission is a low background, 1 AU Earth driftaway orbit requiring a Delta II launch vehicle. This configuration provides a low thermal background and allows adequate communications bandwidth and good access to the entire sky over the approx. 1.5 year mission lifetime.

Ennico, Kimberly↗
NASA NTRS2003

Toward the Development of Group III-V Photodetectors and Imaging Arrays

A collaboration between researchers at NASA Goddard Space Flight Center (GSFC) (Code 718.1) and the Johns Hopkins University Applied Physics Laboratory (APL) on the development of gallium nitride (GaN) based photodetectors has been in existence since July 1994. This collaboration, based on APL undertaking the material growth and GSFC undertaking the device processing, has led to discrete GaN photoconductive detectors with superior characteristics to those of similar devices reported in the literature and, more recently, to the development of state-of-the art 256x256 imaging arrays with the pixels indium bump-bonded to a silicon readout circuit (RIOC). The object of this proposal is to continue the collaboration for the period 1998-2002 by outlining a program of work at the APL on the metalorganic chemical vapor deposition (MOCVD) growth of GaN and related materials for UV detector applications. In particular, emphasis will be placed on the optimization of growth on 2 in diameter substrates, on the growth of In(sub x)Ga(1-x)N and Al(sub x)Ga(1-x)N alloy structures to produce devices with a wider range of tailored cut-off wavelengths, and on the growth of pn-junction structures for photovoltaic devices.

Wickenden, Dennis K.↗
NASA NTRS2005

Cassini CIRS Observations of Saturn's Rings

In the spring of 2004, during Cassini s approach to Saturn, the Cassini Composite Infrared Spectrometer (CIRS) began acquiring thermal spectra of Saturn s rings. CIRS is a Fourier-transform spectrometer that measures radiation in the thermal infrared from 7 microns to 1 millimeter (1400 to 10/cm). CIRS has a set of 21 detectors, consisting of two 1 x 10 linear arrays with a pixel size of 0.3 mrad, and one 4 mrad circular detector. Just after the completion of the Saturn orbit insertion (SOI) burn, CIRS performed an especially high spatial resolution scan of portions of Saturn s A, B and C rings. In the months following SOI, additional ring measurements have been obtained, including radial scans on the lit and unlit sides of the rings, and azimuthal scans across the shadowed regions of the A, B and C rings.

Spilker, Linda J.↗
NASA NTRS2001

High speed CMOS imager with motion artifact supression and anti-blooming

An image sensor includes pixels formed on a semiconductor substrate. Each pixel includes a photoactive region in the semiconductor substrate, a sense node, and a power supply node. A first electrode is disposed near a surface of the semiconductor substrate. A bias signal on the first electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the sense node. A second electrode is disposed near the surface of the semiconductor substrate. A bias signal on the second electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the power supply node. The image sensor includes a controller that causes bias signals to be provided to the electrodes so that photocharges generated in the photoactive region are accumulated in the photoactive region during a pixel integration period, the accumulated photocharges are transferred to the sense node during a charge transfer period, and photocharges generated in the photoactive region are transferred to the power supply node during a third period without passing through the sense node. The imager can operate at high shutter speeds with simultaneous integration of pixels in the array. High quality images can be produced free from motion artifacts. High quantum efficiency, good blooming control, low dark current, low noise and low image lag can be obtained.

Pain, Bedabrata↗