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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16

Integrated Multiscale Modeling for Design of Robust 3D Solid-State Lithium Batteries - FY21 Annual Report

This project is developing a multiscale, multi-physics modeling framework for probing the effects of materials microstructure and device architecture on ion transport within 3D ceramic solid-state battery materials, with the goal of enhancing performance and reliability. The project has three primary objectives: (1) integrate multi physics and multiscale model components; (2) understand interface- and microstructure-derived limitations on ion transport; and (3) derive key structure-performance relations for enabling future optimization.

25 ENERGY STORAGE↗

Low latency and persistent data storage

Persistent data storage is provided by a method that includes receiving a low latency store command that includes write data. The write data is written to a first memory device that is implemented by a nonvolatile solid-state memory technology characterized by a first access speed. It is acknowledged that the write data has been successfully written to the first memory device. The write data is written to a second memory device that is implemented by a volatile memory technology. At least a portion of the data in the first memory device is written to a third memory device when a predetermined amount of data has been accumulated in the first memory device. The third memory device is implemented by a nonvolatile solid-state memory technology characterized by a second access speed that is slower than the first access speed.

97 MATHEMATICS AND COMPUTING↗

Low latency and persistent data storage

Persistent data storage is provided by a computer program product that includes computer program code configured for receiving a low latency store command that includes write data. The write data is written to a first memory device that is implemented by a nonvolatile solid-state memory technology characterized by a first access speed. It is acknowledged that the write data has been successfully written to the first memory device. The write data is written to a second memory device that is implemented by a volatile memory technology. At least a portion of the data in the first memory device is written to a third memory device when a predetermined amount of data has been accumulated in the first memory device. The third memory device is implemented by a nonvolatile solid-state memory technology characterized by a second access speed that is slower than the first access speed.

97 MATHEMATICS AND COMPUTING↗

Understanding the defect structure of solution grown zinc oxide

Zinc oxide (ZnO) is a wide bandgap semiconducting oxide with many potential applications in various optoelectronic devices such as light emitting diodes (LEDs) and field effect transistors (FETs). Much effort has been made to understand the ZnO structure and its defects. However, one major issue in determining whether it is Zn or O deficiency that provides ZnO its unique properties remains. X-ray absorption spectroscopy (XAS) is an ideal, atom specific characterization technique that is able to probe defect structure in many materials, including ZnO. In this paper, comparative studies of bulk and aqueous solution grown ({<=}90 Degree-Sign C) ZnO powders using XAS and x-ray pair distribution function (XPDF) techniques are described. The XAS Zn-Zn correlation and XPDF results undoubtedly point out that the solution grown ZnO contains Zn deficiency, rather than the O deficiency that were commonly reported. This understanding of ZnO short range order and structure will be invaluable for further development of solid state lighting and other optoelectronic device applications. - Graphical abstract: Highlights: Black-Right-Pointing-Pointer ZnO powders have been synthesized through an aqueous solution method. Black-Right-Pointing-Pointer Defect structure studied using XAS and XPDF. Black-Right-Pointing-Pointer Zn-Zn correlations are less in the ZnO powders synthesized in solution than bulk. Black-Right-Pointing-Pointer Zn vacancies are present in the powders synthesized. Black-Right-Pointing-Pointer EXAFS and XPDF, when used complementary, are useful characterization techniques.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

PMMA-Assisted Plasma Patterning of Graphene

Microelectronic fabrication of Si typically involves high-temperature or high-energy processes. For instance, wafer fabrication, transistor fabrication, and silicidation are all above 500°C. Contrary to that tradition, we believe low-energy processes constitute a better alternative to enable the industrial application of single-molecule devices based on 2D materials. The present work addresses the postsynthesis processing of graphene at unconventional low temperature, low energy, and low pressure in the poly methyl-methacrylate- (PMMA-) assisted transfer of graphene to oxide wafer, in the electron-beam lithography with PMMA, and in the plasma patterning of graphene with a PMMA ribbon mask. During the exposure to the oxygen plasma, unprotected areas of graphene are converted to graphene oxide. The exposure time required to produce the ribbon patterns on graphene is 2 minutes. We produce graphene ribbon patterns with ∼50 nm width and integrate them into solid state and liquid gated transistor devices.

36 MATERIALS SCIENCE↗

An Open-path Laser Transmissometer for Atmospheric Extinction Measurements

A transmissometer is an optical instrument which measures transmitted intensity of monochromatic light over a fixed pathlength. Prototype of a simple laser transmissometer has been developed for transmission (or extinction) measurements through suspended absorbers and scatterers in the atmosphere over tens of meters. Instrument consists of a continuous green diode pumped solid state laser, transmission optics, photodiode detectors and A/D data acquisition components. A modulated laser beam is transmitted and subsequently reflected and returned to the unit by a retroreflecting mirror assembly placed several tens of meters away. Results from an open-path field measurement of the instrument are described.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

System and method for treating the surface of solid electrolytes

Disclosed are electrochemical devices, such as lithium battery electrodes, lithium ion conducting solid state electrolytes, and solid-state lithium metal batteries including these electrodes and solid state electrolytes. In one embodiment, a method for forming an electrochemical device is disclosed in which a precursor electrolyte is heated to remove at least a portion of a resistive surface region of the precursor electrolyte.

Sakamoto, Junki↗

Defect‐Free Nanowelding of Bilayer SnSe Nanoplates

Nanowelding is a bottom‐up technique to create custom‐designed nanostructures and devices beyond the precision of lithographic methods. Here, a new technique is reported based on anisotropic lubricity at the van der Waals interface between monolayer and bilayer SnSe nanoplates and a graphene substrate to achieve precise control of the crystal orientation and the interface during the welding process. As‐grown SnSe monolayer and bilayer nanoplates are commensurate with graphene's armchair direction but lack commensuration along graphene's zigzag direction, resulting in a reduced friction along that direction and a rail‐like, 1D movement that permits joining nanoplates with high precision. This way, molecular beam epitaxially grown SnSe nanoplates of lateral sizes 30–100 nm are manipulated by the tip of a scanning tunneling microscope at room temperature. In situ annealing is applied afterward to weld contacting nanoplates without atomic defects at the interface. This technique can be generalized to any van der Waals interfaces with anisotropic lubricity and is highly promising for the construction of complex quantum devices, such as field effect transistors, quantum interference devices, lateral tunneling junctions, and solid‐state qubits.

2D ferroelectrics↗

Transverse thermal energy conversion using spin and topological structures

Conversion of thermal to electrical energy has been a subject of intense study for well over two centuries. Despite steady progress throughout the past several decades, solid-state thermoelectric (TE) energy conversion devices remain adequate only for niche applications. One appealing option for circumventing the limits of conventional TE physics is to utilize phenomena where flows of heat and charge are perpendicular, the so-called “transverse” geometry. In this Tutorial, we discuss recent advances behind new ways to generate large transverse thermoelectric voltages, such as the spin Seebeck and Nernst effects, as well as Weyl physics. We provide suggestions for how these mechanisms might be enhanced and implemented into high-efficiency, next generation transverse TE devices. Furthermore, we also discuss best practices for accurate measurement and reporting of transverse thermoelectric material properties, including a case study of a round robin spin Seebeck coefficient measurement.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Intrinsic anion diffusivity in lead halide perovskites is facilitated by a soft lattice

Significance Understanding and controlling the ion migration in a solid-state semiconductor is essential for device performance in modern photonics, electronics, and optoelectronics. Direct microstructural observation and atomic-scale mechanism of the intrinsic lattice diffusion are still highly challenging. Here, we report the direct visualization of halide anion interdiffusion in CsPbCl 3 –CsPbBr 3 single crystalline nanowire heterojunctions via nanoscale imaging, allowing for the direct measuring of intrinsic lattice diffusivities. The intrinsic halide diffusivities were found to be several orders of magnitudes lower than those reported in polycrystalline thin films. Together with multiscale modeling, we further demonstrate how anionic diffusion in lead halides is determined by low barriers to vacancy hopping and facilitated by the soft perovskite lattice.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

High Temperature Thick Film Sensor Development Based on Refractory Oxide Semiconductors

Solid-state, high-temperature sensing devices are required for accurate temperature, strain/stress, and failure monitoring for a range of advanced manufacturing, transportation, and military applications. High temperature conditions limit sensing strategies, where typically traditional metal and semiconductor materials are unstable, and the sensing options are limited to optical spectroscopy methods. In addition, strategies to embed the sensors directly within active components and protective thermal refractory are of interest that permit near-environment sensing which is not possible with the traditional electronic materials and components. Rare-earth chromite semiconductors exhibit some properties of interest for high temperature sensing technologies, such as: high microstructure and chemical stability, relatively high electronic conductivity at high temperatures, and relative thermal expansion coefficient matching to refractory thermal protective insulation (such as high-zirconia and -alumina ceramics). In this work, n-type and p-type doped lanthanum chromites compositions were computationally modelled and prepared, and the electrical, thermoelectric, and thermomechanical properties were measured for the obtained material systems. A few compositions were then processed into thick film health and temperature sensors and tested at high temperatures. To establish relative stability under harsh environment conditions, post- mortem microstructure and chemical composition was characterized after extended and cycle testing at high temperatures.

20 FOSSIL-FUELED POWER PLANTS↗

Bulk direct gap MoS2 by plasma induced layer decoupling

Bulk direct transition metal dichalcogenide (TMDC) may have an increased interlayer separation of at least 0.5, 1, or 3 angstroms more than its bulk value. The TMDC may be a bulk direct band gap molybdenum disulfide (MoS2) or a bulk direct band gap tungsten diselenide (WSe2). Oxygen may be between the interlayers. A device may include the TMDC, such as an optoelectronic device, such as an LED, solid state laser, a photodetector, a solar cell, a FET, a thermoelectric generator, or a thermoelectric cooler. A method of making bulk direct transition metal dichalcogenide (TMDC) with increased interlayer separation may include exposing bulk direct TMDC to a remote (aka downstream) oxygen plasma. The plasma exposure may cause an increase in the photoluminescence efficiency of the TMDC, more charge neutral doping, or longer photo-excited carrier lifetimes, as compared to the TMDC without the plasma exposure.

36 MATERIALS SCIENCE↗

Efficient and scalable GaInAs thermophotovoltaic devices

We report thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste-heat recovery. Here, we report the design, fabrication, and testing of large area (0.8 cm 2 ), scalable, single-junction 0.75-eV GaInAs thermophotovoltaic devices reaching an efficiency of 38.8% +/- 2.0% and an electrical power density of 3.78 W/cm 2 at an emitter temperature of 1,850 °C. Reaching such a high emitter temperature and power density without sacrificing efficiency is a direct result of combining good spectral management with an optimized cell architecture, excellent material quality, and low series resistance. Importantly, fabrication of 12 high-performing devices on a 2-in wafer is shown to be repeatable, and the cell design can be readily transferred to commercial epitaxy on even larger wafers. Further improvements in efficiency can be obtained by using a multijunction architecture, illustrated by early results for a two-junction 0.84-eV GaInPAs/0.75-eV GaInAs device.

14 SOLAR ENERGY↗

Surface Ligand Effects on Energetics, Charge Transfer, and Stability at Interfaces Between Metal Halide Perovskites and Organic Semiconductors

Chemistry at organic-inorganic interfaces plays a major role in determining the performance of electronic and optoelectronic devices. Understanding, developing, and using surface chemistry is thus essential for creating improved and novel materials and devices. Organic metal halide perovskites (HPs) are inexpensive semiconductors that can be printed from solution to make efficient photovoltaic cells for harvesting solar energy, light emitting diodes for energy efficient solid-state lighting applications, solid-state lasers, and even spin selective devices with applications to quantum computing. To realize the potential of HPs, their surface chemistry and interfacial properties must be better understood and appropriately adjusted to meet the needs of the targeted application. For example, surface chemistry influences non-radiative recombination, which influences the efficiency of light emission and solar energy conversion, charge-carrier injection and extraction from optoelectronic devices, and material and device stability. This research project centered around determining how the surface chemistry of HP thin films and nanoparticles influences optical properties, charge transfer processes, energetics, and stability. In this project we characterized ligand binding strengths to HPs; determined how surface ligand chemistry influences photoluminescence properties, energetics, and charge transfer processes; determined that surface ligands often penetrate into HPs and uncovered methods of reducing surface ligand penetration through structural modifications; and discovered how interfacial energetics impact charge transfer processes and photovoltaic performance parameters. Overall, this research established important insights into how surface ligands interact with HPs to influence their optical properties, electronic properties, stability, and device level performance.

14 SOLAR ENERGY↗

Novel Non-Vacuum Fabrication of Solid State Lithium Ion Battery Components

The purpose of this Cooperative Research and Development Agreement (CRADA) between Oak Ridge National Laboratory (ORNL) and Planar Energy Devices, Inc. was to develop large-scale electroless deposition and photonic annealing processes associated with making all-solid-state lithium ion battery cathode and electrolyte layers. However, technical and processing difficulties encountered in 2011 resulted in the focus of the CRADA being redirected solely to annealing of the cathode thin films. In addition, Planar Energy Devices de-emphasized the importance of annealing of the solid-state electrolytes within the scope of the project, but materials characterization of stabilized electrolyte layers was still of interest. All-solid-state lithium ion batteries are important to automotive and stationary energy storage applications because they would eliminate the problems associated with the safety of the liquid electrolyte in conventional lithium ion batteries. However, all-solid-state batteries are currently produced using expensive, energy consuming vacuum methods suited for small electrode sizes. Transition metal oxide cathode and solid-state electrolyte layers currently require about 30-60 minutes at 700-800°C vacuum processing conditions. Photonic annealing requires only milliseconds of exposure time at high temperature and a total of <1 min of cumulative processing time. As a result, these processing techniques are revolutionary and highly disruptive to the existing lithium ion battery supply chain. The current methods of producing all-solid-state lithium ion batteries are only suited for small-scale, low-power cells and involve high-temperature vacuum techniques. Stabilized LiNi x Mn y Co z Al 1-x-y-z O 2 (NMCA) nanoparticle films were deposited onto stainless steel substrates using Planar Energy Devices’ streaming process for electroless electrochemical deposition (SPEED). Since successful SPEED trials were demonstrated by Planar Energy Devices with NMCA prior to 2010, this high-voltage (i.e. 5 V) cathode material was the focus of the project. ORNL had also shown in prior work that photonic annealing can be used to anneal conventionally coated cathode metal oxide structures into the active crystalline phase. Planar Energy Devices also had demonstrated SPEED with solid electrolyte layers consisting of LiGaAlSPO 4 prior to the start of the project.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Overcoming the black body limit in plasmonic and graphene near-field thermophotovoltaic systems

Near-field thermophotovoltaic (TPV) systems with carefully tailored emitter-PV properties show large promise for a new temperature range (600 – 1200K) solid state energy conversion, where conventional thermoelectric (TE) devices cannot operate due to high temperatures and far-field TPV schemes suffer from low efficiency and power density. We present a detailed theoretical study of several different implementations of thermal emitters using plasmonic materials and graphene. We find that optimal improvements over the black body limit are achieved for low bandgap semiconductors and properly matched plasmonic frequencies. For a pure plasmonic emitter, theoretically predicted generated power density of 14 $\frac{W}{cm^2}$ efficiency of 36% can be achieved at 600K (hot-side), for 0.17eV bandgap (InSb). Developing insightful approximations, we argue that large plasmonic losses can, contrary to intuition, be helpful in enhancing the overall near-field transfer. We discuss and quantify the properties of an optimal near-field photovoltaic (PV) diode. In addition, we study plasmons in graphene and show that doping can be used to tune the plasmonic dispersion relation to match the PV cell bangap. In case of graphene, theoretically predicted generated power density of 6(120)$\frac{W}{cm^2}$ efficiency of 35(40)% can be achieved at 600(1200)K, for 0.17eV bandgap. With the ability to operate in intermediate temperature range, as well as high efficiency and power density, near-field TPV systems have the potential to complement conventional TE and TPV solid state heat-to-electricity conversion devices.

30 DIRECT ENERGY CONVERSION↗

All-solid-state supercapacitors on silicon using graphene from silicon carbide

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm{sup −2} with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

36 MATERIALS SCIENCE↗