Tunneling effects in tilted magnetic fields in n-InGaAs/GaAs structures with strongly coupled double quantum wells
The effects of tunneling between two parallel two-dimensional electron gases in n-InGaAs/GaAs nanostructures with strongly coupled double quantum wells with a change in the in-plane component of a tilted magnetic field (up to B{sub Double-Vertical-Line} = 9.0 T) in the temperature range T = 1.8-70.0 K are investigated. A nonmonotonic temperature dependence of the inverse quantum lifetime {tau}{sub q}{sup -}(T) is obtained from analysis of the dependence of the longitudinal resistance on the parallel component of the tilted magnetic field at fixed temperatures, {rho}{sub xx}(B{sub Double-Vertical-Line }, T). The quadratic portion of this dependence is found to be due to the contribution of inelastic electron-electron scattering. The decrease in the inverse quantum lifetime {tau}{sub q}{sup -}(T) at T > 0.1T{sub F} cannot be described within known theories; it seems, it is not related to the processes of electron momentum relaxation.