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Abstracts, bibliographic data, oral presentations, and published papers on (1) Diffusion of Sulfur in Gallium Phosphide and Gallium Arsenide, and (2) Properties of Gallium Phosphide Schottky Barrier Rectifiers for Use at High Temperature are presented.
GaAs Schottky barrier varactors with a cutoff frequency of 800 GHz are used in a balanced diode-type parametric amplifier operating with a signal frequency at 7.5 GHz. The room-temperature parameters of the amplifier are a gain of 15 dB, a bandwidth of 500 MHz, and an excess noise temperature of 63 K (a noise figure of 0.86 dB).
Materials, devices and novel schemes for generation, amplification and detection of microwave and millimeter wave energy are studied. Considered are: (1) Schottky-barrier microwave devices; (2) intermodulation products in IMPATT diode amplifiers; and (3) harmonic generation using Read diode varactors.
Ku-band microminiature modulators were designed to convert a 10 mW signal at 400 MHz to a 10 mW signal at 15 GHz. The designs incorporate gallium arsenide Schottky barrier varactors used in upper-sideband up-converters. The use of Ku-band microstrip circulators and hairpin resonator bandpass filters at 2.1 GHz and 2.5 GHz is included. The design and fabrication of a single up-conversion unit with a double up-conversion unit are compared. Various filter configurations are studies, and the use of both alumina and quartz substrates are considered. The various impedance matching networks are evaluated using computer aided design techniques.
Electron spin resonance measurements on variously treated zinc oxide powders reveal that the resonance signal at g = 1.956 is due to one electron trapped oxygen ion vacancy level, at a depth of (0.31 plus or minus 0.02) eV below the conduction band. The electrons at this level are delocalized. Schottky barrier influences nearly the entire bulk of the powder sample, and the bending of the bands caused by chemisorbed oxygen puts the vacancy level above the Fermi level almost through the entire bulk.
Amplifier, fabricated on single dielectric substrate, has pair of Schottky barrier varactor diodes mounted on single semiconductor chip. Circuit includes microstrip transmission line and slot line section to conduct signals. Main features of amplifier are reduced noise output and low production cost.
Short-wavelength energy converter can be made using Schottky barrier structure. It has wider band gap than p-n junction silicon semiconductors, and thus it has improved response at wavelengths down to and including ultraviolet region.
A description is given of two new mixers designed to operate in the 80-120-GHz range on 36-ft radio telescope. It is shown that for a hard-driven diode the parasitic resistance and capacitance are the primary factors influencing the design of the diode mount. A room-temperature mixer is described which achieves a single-sideband (SSB) conversion loss (L) of 5.5 dB, and a SSB noise temperature (Tm) of 500 K (excluding the IF contribution) with a 1.4-GHz IF. A cryogenically cooled version, using a quartz structure to support the diode chip and contact whisker, achieves values of L = 5.8 dB and Tm = 300 K with a 4.75-GHz IF. The mixers use high-quality Schottky-barrier diodes in a one-quarter-height waveguide mount.
The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.
Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.
The possible transmission of high power laser beams over long distances and their conversion to thrust, electricity, or other useful forms of energy is considered. Specific topics discussed include: laser induced chemistry; developments in photovoltaics, including modification of the Schottky barrier devices and generation of high voltage emf'sby laser radiation of piezoelectric ceramics; the thermo electronic laser energy converter and the laser plasmadynamics converters; harmonic conversion of infrared laser radiation in molecular gases; and photon engines.
Research results are reported for GaAs Schottky barrier solar cells, GaAlAs/GaAs heteroface solar cells, and GaAlAs graded band gap solar cells. Related materials studies are presented. A systems study for GaAs and Si solar concentrator systems is given.
The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short pulse detection, is reported. This work entailed both the development of a new type of heterojunction III-V semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low noise preamp design making use of GaAs Schottky barrier-gate field effect transistors (GAASFET's) operating in in the negative-feedback transimpedance mode. The electrical characteristics of the device are described.
The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short-pulse detection, is reported. This work entailed both the development of a new type of heterojunction 3-5 semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low-noise preamp design making use of GaAs Schottky barrier-gate field effect transistors.
The characteristics of a specific M-I-S structure are analyzed for various assumed roles of the thin-film insulating layer. It is shown that the behavior of an ideal Schottky barrier is obtained in the case where the insulating layer does not hinder transport and no localized states are present (or, if present, their population is dictated by the metal Fermi level). The cell is a majority carrier device; by using the insulating layer to control transport, it becomes a minority carrier cell.
A specific heat anomaly in PdH and PdD has been observed by Aston et al. (1957) close to 55 K. Its position was found to be independent of hydrogen concentration and its magnitude to be linear in hydrogen concentration. Ferguson's (1965) and Brodowsky's (1972) explanations of the anomaly are shown to be unsatisfactory. This is true also for the detailed mechanical statistical model proposed by Staford and McLellan (1974) for interstitial solid solutions of hydrogen in transition metals. It is shown that Gopal's (1966) simple Schottky model of specific heat anomaly, which considers a system of several levels with Boltzmann statistics, provides much better agreement with experiment than the more elaborate models, both in magnitude and in predicting a linear dependence on hydrogen concentration.
The results of an experimental study of a biconical quasi-optical Schottky barrier diode mount design which could be used for mixing and multiplying in the frequency range 200-1000 Ghz are reported. The biconical mount is described and characteristics measured at 185 Ghz are presented. The use of the mount for quasi-optical frequency doubling from 56 to 112 Ghz is described and efficiency estimates given.
An analysis was made on two commercially available silicon and gallium arsenide Schottky barrier diodes. These diodes were selected because of their particularly low noise figure in the frequency range of interest. The specified noise figure for the silicon and gallium arsenide diodes were 6.3 db and 5.3 db respectively when functioning as mixers in the 13.6 GHz region with optimum local oscillator drive.