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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Zero-field Hall effect emerging from a non-Fermi liquid in a collinear antiferromagnet V 1/3 NbS 2

Magnetically intercalated transition metal dichalcogenides (TMDs) provide a versatile three-dimensional (3D) material platform to explore quantum phenomena and functionalities that emerge from an intricate interplay among magnetism, band structure, and electronic correlations. Here, we report the observation of a nearly magnetization-free anomalous Hall effect (AHE) accompanied by non-Fermi liquid (NFL) behavior and collinear antiferromagnetism (AFM) in V 1/3 NbS 2 . Our single-crystal neutron diffraction measurements identify a commensurate, collinear AFM order formed by intercalated V moments. In the magnetically ordered state, the spontaneous AHE is tenfold greater than expected from empirical scaling with magnetization, and this strongly enhanced AHE arises in the NFL regime that violates the quasiparticle picture. V 1/3 NbS 2 challenges the existing single-particle framework for understanding AHEs based on one-body Berry curvature and highlights the potential of magnetically intercalated TMDs to unveil new electronic functionalities where many-body correlations play a critical role.

36 MATERIALS SCIENCE↗
DOE OSTI2024

In situ electric-field control of ferromagnetic resonance in the low-loss organic-based ferrimagnet V[TCNE] x ∼2

We demonstrate indirect electric-field control of ferromagnetic resonance (FMR) in devices that integrate the low-loss, molecule-based, room-temperature ferrimagnet vanadium tetracyanoethylene (V[TCNE]x∼2) mechanically coupled to PMN-PT piezoelectric transducers. Upon straining the V[TCNE]x films, the FMR frequency is tuned by more than 6 times the resonant linewidth with no change in Gilbert damping for samples with α = 6.5 × 10−5. We show this tuning effect is due to a strain-dependent magnetic anisotropy in the films and find the magnetoelastic coefficient |λs| ∼ (1–4.4) ppm, backed by theoretical predictions from density-functional theory calculations and magnetoelastic theory. Noting the rapidly expanding application space for strain-tuned FMR, we define a new metric for magnetostrictive materials, magnetostrictive agility, given by the ratio of the magnetoelastic coefficient to the FMR linewidth. This agility allows for a direct comparison between magnetostrictive materials in terms of their comparative efficacy for magnetoelectric applications requiring ultra-low loss magnetic resonance modulated by strain. With this metric, we show V[TCNE]x is competitive with other magnetostrictive materials, including YIG and Terfenol-D. This combination of ultra-narrow linewidth and magnetostriction, in a system that can be directly integrated into functional devices without requiring heterogeneous integration in a thin film geometry, promises unprecedented functionality for electric-field tuned microwave devices ranging from low-power, compact filters and circulators to emerging applications in quantum information science and technology.

Materials Science↗
DOE OSTI2024

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

The efficiency of operation of GaN-based light emitting diodes (LEDs) to a large degree relies on realization of a uniform hole distribution between multiple quantum wells (QWs) of the active region. Since the direct thermionic transport between the QWs is inefficient, the hole injection through semipolar {$10\bar{1}1$} QWs that form on the facets of V-defects has been suggested as an alternative approach. However, for an efficient LED operation, the carrier distribution should be uniform not only vertically, between the QWs but also laterally, within individual QWs. In this work, the lateral carrier distribution in long wavelength InGaN/GaN QW LEDs is studied by the scanning near-field optical microscopy. The measurements have shown that emission is concentrated around the V-defect injectors. At high currents, the diffusion length of holes in polar QWs was found to be ∼0.6–1 μm and the hole diffusion coefficient ∼0.6 cm 2 /s. The obtained data should aid design of the V-defect injectors for a laterally uniform carrier distribution in the active region QWs.

Current crowding↗
DOE OSTI2025

Experimental evidence of disordered crystalline premixing in sputter-deposited Ni(V)/Al multilayers

The sputter deposition of alternating layers of Ni(V) and Al forms a reactive multilayer known to undergo self-propagating formation reactions when ignited. The sequential deposition process leads to nanometer-scale premixing of reactants at each included interface, which ultimately affects multilayer exothermicity. This work performs the direct measurement of a disordered face-centered cubic (FCC) solid solution premixed phase at the interfaces of Ni(V)/Al multilayers via scanning transmission electron microscopy. The crystallinity of the observed phase differs from previously reported a priori predictions of an amorphous interlayer. The disordered FCC phase retains its symmetry after annealing for 16 h at 135 ± 5 °C, but the lattice parameter shifts consistently with an Al-rich composition. The existence of a crystalline premix in Ni(V)/Al is attributed to the electronic contribution to the entropy of crystallization. The importance of electronic entropy to the phase formation of energetic materials motivates its inclusion when constructing digital twins for atomistic kinetics and ignition sensitivity.

Crystal structure↗
DOE OSTI2026

Superlattice reflection signatures of the insulator–metal transition in V 3 O 5 thin films

Nanoelectronic systems that are inspired by the brain are increasingly looking to insulator–metal transition (IMT) materials as they can mimic the response characteristics of neurons to temperature changes so that these can be used in robotic and computational applications. V 3 O 5 has an insulator–metal transition at ∼430 or ∼80 K higher than VO 2 and provides a unique high-temperature opportunity for these types of applications. Here, in this work, we track the structural evolution of V 3 O 5 thin films across the IMT through conventional selected-area electron diffraction (SAED) and four-dimensional scanning TEM (4D-STEM), correlated with temperature-dependent resistance measurements. SAED patterns show reversible evidence of superlattice reflections associated with the IMT—present below T IMT and absent above it—consistent with the accompanying drop in resistance. At room temperature, nanobeam electron diffraction patterns further reveal three local configurations: (i) type I regions with clean patterns lacking superlattice reflections and spot splitting; (ii) type II regions exhibiting rows of superlattice reflections and split spots indicative of crystallographic variants; and (iii) type III regions with negligible superlattice reflections but larger spot splitting suggestive of overlapping domains of insulating and conducting phases likely driven by local lattice distortions. Upon heating, the superlattice reflections disappear between 413 and 453 K, concurrent with the resistance drop at T IMT , consistent with the emergence of a conducting phase. The overall diffraction geometry remains essentially unchanged up to 573 K, implying that relative domain orientations persist through the transition. These observations reveal nanoscale structural heterogeneity in V 3 O 5 thin films across the IMT and inform operation in regimes where mixed-phase textures are expected. A plausible indexing framework rationalizing the observed geometries is presented in the Discussion section, alongside its limitations and alternative interpretations.

25 ENERGY STORAGE↗
DOE OSTI2026

Nonlinear electrical transport near the metal–insulator transition in V 4 O 7 thin films

Nonlinear electrical transport associated with correlated electronic states has been widely investigated in transition-metal oxides near metal–insulator transitions. Here, in this study, we investigate nonlinear transport and threshold switching in sputter-deposited V 4 O 7 thin films grown on fused silica substrates. Temperature-dependent transport measurements show a metal–insulator transition near 240 K with negligible thermal hysteresis, defining the temperature scale that governs the nonlinear electrical response. Current–voltage measurements reveal reproducible bipolar threshold switching over a broad temperature range, with the threshold voltage decreasing systematically as the transition temperature is approached. Electrothermal finite-element simulations reproduce the measured switching characteristics and show that switching occurs when localized Joule heating drives a confined region of the device toward the transition temperature. The simulated peak local temperature at threshold lies close to the intrinsic metal–insulator transition temperature of V 4 O 7 , establishing that the nonlinear electrical response originates from electrothermal feedback acting on the strongly temperature-dependent conductivity near the transition. These results identify V 4 O 7 thin films as a model correlated-oxide system in which volatile threshold switching emerges from proximity to an extended metal–insulator transition.

25 ENERGY STORAGE↗
DOE OSTI2025

51 V NMR evidence for interlayer-modulated charge order and a first-order low-temperature transition in CsV 3 ⁢Sb 5

Charge order in the kagome superconductor CsV 3 ⁢Sb 5 exhibits a complex three-dimensional organization and intermediate-temperature anomalies whose bulk character has remained unsettled. We use orientation-dependent 51 V NMR as a site-selective probe to determine the stacking of the charge density wave (CDW) state and its thermal evolution. Below 𝑇 CDW ≈ 94K, the field-linear splitting of the 51 V central transition together with the anisotropy of the Knight shift tensor identify an interlayer-modulated 3⁢𝑞 CDW whose local environments are consistent with a four-layer 2 × 2 × 4 stacking with mixed trihexagonal/Star-of-David distortions, in agreement with synchrotron x-ray determinations. For comparison, RbV 3 ⁢Sb 5 serves as a reference exhibiting a uniform trihexagonal 2 × 2 × 2 stacking, allowing us to isolate features unique to the 2 × 2 × 4 state in CsV 3 ⁢Sb 5 . With 𝐻 0 ∥ 𝑐, the 51 V quadrupolar satellites through the intermediate temperature scale near 𝑇 CO ≈ 65K reorganize into two well-resolved electric-field-gradient manifolds that coexist over a finite interval; their relative spectral weights interchange on cooling while the total integrated satellite intensity remains conserved and 𝜈 𝑄 within each manifold is nearly temperature independent. The coexistence without critical broadening, together with conserved intensity, provides bulk evidence consistent with a first-order charge-order transition near 𝑇 CO . Our measurements do not resolve whether this lower-temperature transition corresponds to a distinct in-plane order or a reorganization of the 3⁢𝑞 state; rather, they delimit this window and provide bulk, site-resolved constraints that connect prior reported anomalies to a thermodynamic first-order transition.

Wang, Xiaoling [California State Univ., East Bay, ↗
DOE OSTI2024

Ab initio electroweak corrections to superallowed β decays and their impact on V ud

Radiative corrections are essential for an accurate determination of V ud from superallowed β decays. In view of recent progress in the single-nucleon sector, the uncertainty is dominated by the theoretical description of nucleus-dependent effects, limiting the precision that can currently be achieved for V ud . In this work, we provide a detailed account of the electroweak corrections to superallowed β decays in effective field theory (EFT), including the power counting, potential and ultrasoft contributions, and factorization in the decay rate. Here, we present a first numerical evaluation of the dominant corrections in light nuclei based on quantum Monte Carlo methods, confirming the expectations from the EFT power counting. Finally, we discuss strategies how to extract from data the low-energy constants that parametrize short-distance contributions and whose values are not predicted by the EFT. Combined with advances in ab initio nuclear-structure calculations, this EFT framework allows one to systematically address the dominant uncertainty in V ud , as illustrated in detail for the 14 O → 14 N transition.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Antiferromagnetic V 2 ⁢O 3 based exchange coupling

Vanadium sesquioxide (V 2 ⁢O 3 ) is a strongly correlated electronic material that famously undergoes a triple coupled first-order transition where it transitions from a paramagnetic metal with a rhombohedral structure at high temperature to an antiferromagnetic insulator with a monoclinic structure. While several studies have used one of both electronic and structural transitions to control the properties of a heterostructure, evidence of magnetic coupling has notoriously yet to be found. In this paper, we report on a robust magnetic coupling between the antiferromagnetic (AFM) V 2 ⁢O 3 and ferromagnetic (FM) Permalloy (Py) layers that results in a significant exchange bias and strain-induced coercivity enhancement. We provide a temperature and angle-dependent study of magnetic properties, which clearly indicates exchange bias at the AFM/FM interface that appears at the onset of the metal-insulator transition. The magnitude of the exchange bias is strongest when the field is applied along the [001] V 2 ⁢O 3 crystallographic orientation which corresponds to an AFM spin configuration on the [110] surface. Here, this opens the door to designing and implementing novel functionalities in transition metal oxide-based computing using the connection between magnetism and the metal-insulator transition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Band-gap reduction and band alignments of dilute bismide III–V alloys

Adding a few atomic percent of Bi to III–V semiconductors leads to significant changes in their electronic structure and optical properties. Bismuth substitution on the pnictogen site leads to a large increase in spin-orbit splitting Δ SO at the top of the valence band (Γ 8⁢𝑣 −Γ 7⁢𝑣 ) and a large reduction in the band gap, creating unique opportunities in semiconductor device applications. Quantifying these changes is key to the design and simulation of electronic and optoelectronic devices. Using hybrid functional calculations, we predict the band gap of III–Vs (III = Al, Ga, In and V = As, Sb) with low concentrations of Bi (3.125% and 6.25%), the effects of adding Bi on the valence- and conduction-band edges, and the band offset between these dilute alloys and their III–V parent compounds. As expected, adding Bi raises the valence-band maximum (VBM). However, contrary to previous assumptions, the conduction-band minimum (CBM) is also significantly lowered, and both effects contribute to the sizable band-gap reduction. Changes in band gap and Δ SO are notably larger in the arsenides than in the antimonides. In conclusion, we also predict cases of band-gap inversion (Γ 6⁢𝑐 below Γ 8⁢𝑣 ), and Δ SO larger than the band gap, which are key parameters for designing topological materials and for minimizing losses due to Auger recombination in infrared lasers.

Saboor, Abdul [Univ. of Delaware, Newark, DE (Unit↗
DOE OSTI2024

Measurement of multijet azimuthal correlations and determination of the strong coupling in proton-proton collisions at $\sqrt{s}=13\,\text {Te}\hspace{-.08em}\text {V} $

A measurement is presented of a ratio observable that provides a measure of the azimuthal correlations among jets with large transverse momentum $p_{\textrm{T}}$. This observable is measured in multijet events over the range of $p_{\textrm{T}} = 360$–$3170\,\text {Ge}\hspace{-.08em}\text {V} $ based on data collected by the CMS experiment in proton-proton collisions at a centre-of-mass energy of 13$\,\text {Te}\hspace{-.08em}\text {V}$, corresponding to an integrated luminosity of 134$\,\text {fb}^{-1}$. The results are compared with predictions from Monte Carlo parton-shower event generator simulations, as well as with fixed-order perturbative quantum chromodynamics (pQCD) predictions at next-to-leading-order (NLO) accuracy obtained with different parton distribution functions (PDFs) and corrected for nonperturbative and electroweak effects. Data and theory agree within uncertainties. From the comparison of the measured observable with the pQCD prediction obtained with the NNPDF3.1 NLO PDFs, the strong coupling at the Z boson mass scale is $\alpha _\textrm{S} (m_{{\textrm{Z}}}) =0.1177 \pm 0.0013\, \text {(exp)} _{-0.0073}^{+0.0116} \,\text {(theo)} = 0.1177_{-0.0074}^{+0.0117}$, where the total uncertainty is dominated by the scale dependence of the fixed-order predictions. A test of the running of $\alpha _\textrm{S}$ in the $\,\text {Te}\hspace{-.08em}\text {V}$ region shows no deviation from the expected NLO pQCD behaviour.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS1975

Hydrogen environment embrittlement of astroloy and Udimet 700 (nickel-base) and V-57 (iron-base) superalloys

The sensitivity to hydrogen environment embrittlement of three superalloys was determined. Astroloy forgings were resistant to embrittlement during smooth tensile, notched tensile, and creep testing in 3.5-MN/sq m hydrogen over the range 23 to 760 C. The notched tensile strength of Udimet 700 bar stock in hydrogen at 23 C was only 50 percent of the baseline value in helium. Forgings of V-57 were not significantly embrittled by hydrogen during smooth tensile testing over the range 23 to 675 C; creep and rupture lives of V-57 were degraded by hydrogen. Postcreep tensile ductility of V-57 was reduced by 40 percent after creep exposure in hydrogen.

Gray, H. R.↗
NASA NTRS1975

The Shuttle Orbital Maneuvering System P-V-T Propellant Quantity Gaging Accuracy and Leak Detection Allowance for Four Instrumentation Conditions

The shuttle orbital maneuvering system (OMS) pressure-volume-temperature (P-V-T) propellant gaging module computes the quantity of usable OMS propellant remaining based on the real gas P-V-T relationship for the propellant tank pressurant, helium. The OMS P-V-T propellant quantity gaging error was determined for four sets of instrumentation configurations and accuracies with the propellant tank operating in the normal constant pressure mode and in the blowdown mode. The instrumentation inaccuracy allowance for propellant leak detection was also computed for these same four sets of instrumentation. These gaging errors and leak detection allowances are presented in tables designed to permit a direct comparison of the effectiveness of the four instrumentation sets. The results show the magnitudes of the improvements in propellant quantity gaging accuracies and propellant leak detection allowances which can be achieved by employing more accurate pressure and temperature instrumentation.

Duhon, D. D.↗
NASA NTRS1977

Wind tunnel investigation of an unpowered helicopter fuselage model with a V-type empennage

The applicability of a V-type empennage on an unpowered semiscale helicopter fuselage is considered as design criteria for improved directional control devices. Configuration changes included variations of V-tail dihedral angle, planform area, and incidence angle. Of the configurations tested, a V-tail with a dihedral angle of 55 deg, a total planform area of 0.244 sq cm, and an incidence angle of 5 deg most nearly match the trim and static stability of the baseline conventional empennage.

Freeman, C. E.↗
NASA NTRS1976

Circumstellar matter in the binary V Puppis

Results are reported for Copernicus observations of the double-lined binary V Puppis in the wavelength region from 1155 to 1310 A with a resolution of 0.2 A. The sharp-lined UV absorption spectrum is found to provide a line of sight dominated by an apparently 'textbook' H II region in a Stromgren sphere surrounding the stars. Several characteristics of this H II region are deduced by analyzing absorption features arising from excited fine-structure states of N II and Si II. Evidence is given for the presence of a normal interstellar H I region containing H2 and a separate H I region which could be the transition zone of the H II region. A possible blueshifted N V feature is noted in absorption. It is suggested that the H(+) emission measure and a characteristic size and shape for the H II region can probably be determined by optical observations of Balmer recombination lines within about 1 deg of V Puppis.

York, D. G.↗
NASA NTRS1978

Photoelectric photometry of J V

UBV photometry of J V (Amalthea) near greatest western elongation shows this satellite to be about one magnitude fainter than previously believed. It is observed to be very red, having a B-V color index near + 1.5 mag. Unlike the Galilean satellites, J V appears to be a low-albedo object.

Millis, R. L.↗
NASA NTRS1979

Nike Black Brant V high altitude dynamic instability characteristics

Flight experience on the Nike Black Brant V has demonstrated the existence of plume induced flow separation over the fins and aft body of the Black Brant V motor. Modelling of the forces associated with this phenomenon as well as analysis of the resultant vehicle coning motion and its effect on the velocity vector heading are presented. A summary of Nike Black Brant V flight experience with high altitude dynamic instability is included.

Montag, W. H.↗
NASA NTRS1979

A correlation between auroral kilometric radiation and inverted V electron precipitation

The paper discusses the direct relationship between the auroral kilometric radiation (AKR) power flux observed by the eccentric orbiting Hawkeye spacecraft and energetic electron precipitation in the nighttime auroral zone measured by the low-altitude polar orbiting AE-D spacecraft. The results of this study show that AKR is more closely associated with inverted V electron precipitation than with plasma sheet precipitation. It is found that as the observed AKR power flux increases, so does the simultaneously observed peak energy in inverted V electron precipitation increase. There is an evidence that suggests that the efficiency of generating AKR from inverted V particle participation ranges from 1/100,000% to a maximum efficiency of about 1%.

Green, J. L.↗