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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

Boron doped silicon n+p solar cells were counterdoped with lithium by ion implanation and the resultant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacancies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗
NASA NTRS1984

Defect interactions in GaAs single crystals

The two-sublattice structural configuration of GaAs and deviations from stoichiometry render the generation and interaction of electrically active point defects (and point defect complexes) critically important for device applications and very complex. Of the defect-induced energy levels, those lying deep into the energy band are very effective lifetime ""killers". The level 0.82 eV below the condition band, commonly referred to as EL2, is a major deep level, particularly in melt-grown GaAs. This level is associated with an antisite defect complex (AsGa - VAS). Possible mechanisms of its formation and its annihilation were further developed.

Gatos, H. C.↗
NASA NTRS1984

Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

Boron doped silicon n+p solar cells were counterdoped with lithium by ion implantation and the resuitant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacanies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗
NASA NTRS1984

The scattering of ultrasonic third sound from substrate surface defects

The interaction of third sound with isolated surface defects is examined. Phase-inverted reflections are observed to occur at surface defects even when the wavelength of the third sound is much greater than the dimensions of the defect. The origin of the scattering mechanism is believed to be due to the change in the helium film thickness in the vicinity of the topological variations introduced by the presence of the surface defects. Data are obtained for ultrasonic frequencies in the 20-200 kHz range.

Generazio, E. R.↗
NASA NTRS1985

DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

Li, S. B.↗
NASA NTRS1986

Rapid thermal processing of Czochralski silicon substrates: Defects, denuded zones, and minority carrier lifetime

Rapid thermal processing (RTP) of Czochralski (Cz) silicon substrates is discussed with its attendant effects on defects, denuded zones, and minority carrier lifetime. Preferential chemical etching and X-ray topography was used to delineate defects which were subsequently correlated with minority carrier lifetime; determined by a pulse metallo-organic decompositon (MOD) test device. The X-ray delineation of grown-in defects was enhanced by a lithium decoration procedure. Results, thus far, show excellent correlation between process-induced defects.

Rozgonyi, G. S.↗
NASA NTRS1986

Cell performance and defect behavior in proton-irradiated lithium-counterdoped n(+)p silicon solar cells

Lithium-counterdoped n(+)p silicon solar cells were irradiated by 10-MeV protons, and their performance was determined as a function of fluence. It was found that the cell with the highest lithium concentration exhibited the higher radiation resistance. Deep-level transient spectroscopy studies of deep-level defects were used to identify two lithium-related defects. Defect energy levels obtained after the present 10-MeV irradiations were found to be markedly different than those observed after previous 1-MeV electron irradiations. However, the present DLTS data are consistent with previous suggestion by Weinberg et al. (1984) of a lithium-oxygen interaction which tends to inhibit formation of an interstitial boron-oxygen defect.

Weinberg, I.↗
NASA NTRS1988

Fatigue behavior of axial and pressure cycled butt and girth welds containing defects

This paper presents the results of a study directed at developing a data base for establishing fitness-for-purpose defect acceptance criteria for welds with defects. The study focused on A106 Grade B steel pipe. Data are presented for flat plate, wall segment, and vessel specimens and actual pipe sections containing either artificial or natural planar or volumetric defects. Defect acceptance criteria developed from the test data are discussed.

Leis, Brian N.↗
NASA NTRS1989

Metastable defects in Be-doped Al(x)Ga(1-x)As

Deep-level transient spectroscopy has been used to study metastable defects in Be-doped Al(x)Ga(1-x)As grown by molecular-beam epitaxy. The metastability manifests itself by the appearance of different spectra depending upon whether the sample is cooled from a high temperature with zero bias or a reverse bias applied to it. The defects are found in concentrations of 10 to the 15th/cu cm in a sample doped with 10 to the 18th Be/cu cm and in much lower concentrations in a 10 to the 17th Be/cu cm sample. Isochronal annealing experiments indicate that the defect is multistable and that it is best modeled as a mobile interstitial which can reside at several sites near acceptor. The activation energies for these defects are between 0.2 and 0.5 eV above the valence band.

Magno, R.↗
NASA NTRS1989

Test Data of Flow Field of Shuttle SRM Nozzle Joint with Bond Defects, Using Unheated Air

The nozzle-to-case joint on the Shuttle SRM (as redesigned after the Challenger accident) features an adhesive sealant filling and bonding the joint, with a wiper O-ring to prevent the adhesive from reaching and disabling the closure O-ring. Flawless implementation of that joint design would ensure that hot, corrosive propellant combustion gases never reach the closure O-ring. However, understanding the flow field related to bonding defects is prudent. A comprehensive test program was conducted to quantify such flow fields and associated heating environments. A two-dimensional, full-scale model represented 65 inches of the nozzle joint, using unheated air as the test medium, in a blowdown mode. Geometry variations modeled RSRM assembly tolerances, and two types of bonding defects: pullaways and blowholes. A range of the magnitude of each type defect was tested. Also a range of operational parameters was tested, representative of the RSRM flow environment, including duplication of RSRM Mach and Reynolds numbers. Extensive instrumentation was provided to quantify pressures, heat rates, and velocities. The resulting data established that larger geometric defects cause larger pressure and larger heating, at the closure O-ring region. Velocity trends were not so straight-forward. Variations in assembly tolerances did not generally affect flow fields or heating. Operational parameters affected flow fields and heating as might be expected, increasing density or velocity increased heating. Complete details of this test effort are presented.

Hair, Leroy M.↗
NASA NTRS1990

Effective actions for bosonic topological defects

A gauge field theory is considered which admits p-dimensional topological defects, expanding the equations of motion in powers of the defect thickness. In this way an effective action and effective equation of motion is derived for the defect in terms of the coordinates of the p-dimensional worldsurface defined by the history of the core of the defect.

Gregory, Ruth↗
NASA NTRS1991

Atomic oxygen interaction with solar array blankets at protective coating defect sites

Atomic oxygen in the low-Earth-orbital environment oxidizes SiOx protected polyimide Kapton solar array blankets at sites which are not protected such as pin windows or scratches in the protective coatings. The magnitude and shape of the atomic oxygen undercutting which occurs at these sites is dependent upon the exposure environment details such as arrival direction and reaction probability. The geometry of atomic oxygen undercutting at defect sites exposed to atomic oxygen in plasma asher was used to develop a Monte Carlo model to simulate atomic oxygen erosion processes at defect sites in protected Kapton. Comparisons of Monte Carlo predictions and experimental results are presented for plasma asher atomic oxygen exposures for large and small defects as well as for protective coatings on one or both sides of Kapton. The model is used to predict in-space exposure results at defect sites for both directed and sweeping atomic oxygen exposure. A comparison of surface textures predicted by the Monte Carlo model and those experimentally observed from both directed space ram and laboratory plasma asher atomic oxygen exposure indicate substantial agreement.

Banks, Bruce A.↗
NASA NTRS1990

Defect sensitivity of filament-wound structures in compression

Compression testing of 12-ply graphite/bismaleimide laminated plates with induced and natural defects is discussed, and emphasis is placed on resultant changes in strength and stiffness. Ply drops, ply cuts, and fiber crossovers are studied by comparison with a quasi-isotropic control group. It is observed that, as expected, failure initiates at the defects and progresses via delamination, sublaminate buckling, angle-ply cracking, and longitudinal ply failure. The ultimate stress is reduced by approximately 40 percent for all types of defects except the unsymmetrical cut-ply specimens which averages a 54-percent reduction. The average stiffness reduction of 10 percent is observed for specimens with induced defects. Fiber crossovers are found to reduce the laminate strength and stiffness significantly.

Jensen, David W.↗
NASA NTRS1992

Defect behavior, carrier removal and predicted in-space injection annealing of InP solar cells

Defect behavior, observed by deep level transient spectroscopy (DLTS), is used to predict carrier removal and the effects of simultaneous electron irradiation and injection annealing of the performance of InP solar cells. For carrier removal, the number of holes trapped per defect is obtained from measurements of both carrier concentrations and defect concentrations during an isochronal anneal. In addition, from kinetic considerations, the behavior of the dominant defect during injection annealing is used to estimate the degradation expected from exposure to the ambient electron environment in geostationary orbit.

Weinberg, I.↗
NASA NTRS1992

Investigations on entropy layer along hypersonic hyperboloids using a defect boundary layer

A defect approach coupled with matched asymptotic expansions is used to derive a new set of boundary layer equations. This method ensures a smooth matching of the boundary layer with the inviscid solution. These equations are solved to calculate boundary layers over hypersonic blunt bodies involving the entropy gradient effect. Systematic comparisons are made for both axisymmetric and plane flows in several cases with different Mach and Reynolds numbers. After a brief survey of the entropy layer characteristics, the defect boundary layer results are compared with standard boundary layer and full Navier-Stokes solutions. The entropy gradient effects are found to be more important in the axisymmetric case than in the plane one. The wall temperature has a great influence on the results through the displacement effect. Good predictions can be obtained with the defect approach over a cold wall in the nose region, with a first order solution. However, the defect approach gives less accurate results far from the nose on axisymmetric bodies because of the thinning of the entropy layer.

Brazier, J. P.↗
NASA NTRS1992

Giant suppression of flux-flow resistivity in heavy-ion irradiated Tl2Ba2Ca2Cu3O10 films - Influence of linear defects on vortex transport

A large shift of the onset of flux-flow resistivity and the irreversibility line H(irr)(T) to higher temperatures is observed in Tl2Ba2Ca2Cu3O10 films containing linear defects created by Ag(+21) ion irradiation. The H(irr)(T), which has a characteristic L shape in highly anisotropic Tl and Bi based cuprates, becomes more like that of YBa2Cu3O7 in the presence of these defects. The Jc at 77 K also shows a large increase as a result of flux localization at the defects. The transport data indicate that in the H-T plane above H(irr)(T) of the unirradiated material, an ensemble of unoccupied defects is required for effective pinning of each flux line in the system.

Budhani, R. C.↗
NASA NTRS1994

A scanning defect mapping system for semiconductor characterization

We have developed an optical scanning system that generates maps of the spatial distributions of defects in single and polycrystalline silicon wafers. This instrument, called Scanning Defect Mapping System, utilizes differences in the scattering characteristics of dislocation etch pits and grain boundaries from a defect-etched sample to identify and count them. This system simultaneously operates in the dislocation mode and the grain boundary (GB) mode. In the 'dislocation mode,' the optical scattering from the etch pits is used to statistically count dislocations, while ignoring the GB's. Likewise, in the 'grain boundary mode' the system only recognizes the local scattering from the GB's to generate grain boundary distributions. The information generated by this instrument is valuable for material quality control, identifying mechanisms of defect generation and the nature of thermal stresses during the crystal growth, and the solar cell process design.

Sopori, Bushnan L.↗
NASA NTRS1995

Electronic characterization of defects in narrow gap semiconductors: Comparison of electronic energy levels and formation energies in mercury cadmium telluride, mercury zinc telluride, and mercury zinc selenide

The project has evolved to that of using Green's functions to predict properties of deep defects in narrow gap materials. Deep defects are now defined as originating from short range potentials and are often located near the middle of the energy gap. They are important because they affect the lifetime of charge carriers and hence the switching time of transistors. We are now moving into the arena of predicting formation energies of deep defects. This will also allow us to make predictions about the relative concentrations of the defects that could be expected at a given temperature. The narrow gap materials mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS) are of interest to NASA because they have commercial value for infrared detecting materials, and because there is a good possibility that they can be grown better in a microgravity environment. The uniform growth of these crystals on earth is difficult because of convection (caused by solute depletion just ahead of the growing interface, and also due to thermal gradients). In general it is very difficult to grow crystals with both radial and axial homogeneity.

Patterson, James D.↗