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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16

Kozai–Lidov Oscillations Triggered by a Tilt Instability of Detached Circumplanetary Discs

Circumplanetary discs can be linearly unstable to the growth of disc tilt in the tidal potential of the star–planet system. We use3D hydrodynamical simulations to characterize the disc conditions needed for instability, together with its long-term evolution.Tilt growth occurs for disc aspect ratios, evaluated near the disc outer edge, ofH/r0.05, with a weak dependence on viscosityin the wave-like regime of warp propagation. Lower mass giant planets are more likely to have circumplanetary discs thatsatisfy the conditions for instability. We show that the tilt instability can excite the inclination to above the threshold where thecircumplanetary disc becomes unstable to Kozai–Lidov (KL) oscillations. Dissipation in the KL unstable regime caps furthertilt growth, but the disc experiences large oscillations in both inclination and eccentricity. Planetary accretion occurs in episodicaccretion events. We discuss implications of the joint tilt–KL instability for the detectability of circumplanetary discs, for theobliquity evolution of forming giant planets, and for the formation of satellite systems.

Rebecca G Martin↗

Detached Melt and Vapor Growth of InI in SUBSA hardware

Indium iodide (InI) single crystals, grown by the Bridgman process, have shown a significant promise as room temperature detector material for X-rays and γ-rays due to the large, close to ideal, bandgap of Eg = 2 eV, and high electrical resistivity. Yet the transport properties of the charge and the detector performance remain inadequate. The Bridgman growth of semiconductor crystals in microgravity have typically resulted in partial dewetting and Marangoni convection, which disturbed the diffusion-controlled growth and produced nonuniform dopant distribution. However, unconfined or partially confined solidification drastically reduced the number of stress-induced defects compared to the confined growth in crucibles on Earth.The goal of the present investigation was to explore melt growth of a heavy metal halide in microgravity, focusing on dewetting, in order to improve the crystalline perfection, i.e., to reduce the number of stress-related defects. InI was chosen because it is non-toxic and has a low melting point of only 365 C (~150 C below the melting point of InSb, used in the SUBSA experiments in 2002). Furthermore, InI melts and evaporates congruently, making it suitable for both growth by directional solidification and growth from the vapor phase. In preparation for the flight experiments, ground-based experiments were conducted in the SUBSA ground unit, consisting of 4 melt growth and 2 vapor growth experiments. The crystals were grown by a gradient freeze method by lowering the setpoint of the furnace. The transparent section of the SUBSA furnace did not allow observations of the solid-liquid interface. Contrary to our expectations, the possible occurrence of dewetting during growth could not be observed. We will present i) the ampoule design and preparation, ii) the experiments conducted in the SUBSA ground unit, iii) the images obtained during the microgravity experiments and iv) the results of the characterization of the grown crystals and detector fabrication.

Crystal Growth↗

Apparatus and method for high density detachable electrical interface

The present disclosure relates to a high density electrical interconnect apparatus for interfacing with remotely located electrical components. The apparatus may have a housing, a substrate element supported within the housing, and a plurality of independent substrate interface connect subsystems arranged in a planar grid on the substrate element. The apparatus further has a plurality of independent electrical interface connector subassemblies, each configured to be coupled to an associated subplurality of the substrate interface connect subsystems, to form a plurality of electrical communication channels with the remotely located electrical components.

Patra, Susant↗

Reduction of Defects in Germanium-Silicon

Crystals grown without contact with a container have far superior quality to otherwise similar crystals grown in direct contact with a container. In addition to float-zone processing, detached- Bridgman growth is a promising tool to improve crystal quality, without the limitations of float zoning or the defects introduced by normal Bridgman growth. Goals of this project include the development of the detached Bridgman process to be reproducible and well understood and to quantitatively compare the defect and impurity levels in crystals grown by these three methods. Germanium (Ge) and germanium-silicon (Ge-Si) alloys are being used. At MSFC, we are responsible for the detached Bridgman experiments intended to differentiate among proposed mechanisms of detachment, and to confirm or refine our understanding of detachment. Because the contact angle is critical to determining the conditions for detachment, the sessile drop method was used to measure the contact angles as a function of temperature and composition for a large number of substrates made of potential ampoule materials. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. Etch pit density (EPD) measurements of normal and detached Bridgman-grown Ge samples show a two order of magnitude improvement in the detached-grown samples. The nature and extent of detachment is determined by using profilometry in conjunction with optical and electron microscopy. The stability of detachment has been analyzed, and an empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed. We have investigated the effects on detachment of ampoule material, pressure difference above and below the melt, and Si concentration; samples that are nearly completely detached can be grown repeatedly in pBN. Current work is concentrated on developing a method to make in situ pressure measurements in the growth ampoules.

Source record↗

High performance power handling in the absence of an H-mode edge in negative triangularity DIII-D plasmas

Abstract Experiments performed during strongly-shaped high-power diverted negative triangularity (NT) experiments in DIII-D achieved detached divertor conditions and a transient-free edge, showcasing the potential for application of NT to a core-edge integrated reactor-like scenario and providing the first characterization of the parametric dependencies for detachment onset. Detached divertor conditions will be required in future devices to mitigate divertor heat fluxes. Access to dissipative divertor conditions was investigated via an increase in upstream density. Detachment onset at the outer strike point was achieved with H-mode level confinement H 98 − y 2 ∼ 1 and reactor-relevant normalized pressures β N ∼ 2 . Confinement degradation was observed with deeper detachment, associated with the loss of an electron temperature pedestal. Differences in geometry, radial transport, impact of cross field drifts are discussed to explain differences in access to detachment in NT discharges. Higher normalized densities, with respect to equivalent discharges in positive triangularity, were necessary to achieve detachment, partially explained by the shorter parallel connection length to the targets. The effect of cross-field particle drifts ( E × B , B × ∇ B ) on access to detachment was demonstrated by the lower upstream density needed to access detachment with ion B × ∇ B drift directed outside of the active divertor (Greenwald fraction f Gw ∼ 0.9–1.0 vs f Gw ∼ 1.3). The upstream density at detachment onset was observed to increase linearly with plasma current with ion B × ∇ B drift into the divertor, consistent with the observed narrowing of the scrape-off layer heat flux width λ q . Edge fluid simulations capture separatrix densities needed to achieve detachment in NT plasma and their dependence on drift direction. The ability to reproduce detachment dynamics in NT plasma increases the confidence in future design studies for NT divertors.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Defect, Kinetics and Heat Transfer of CDTE Bridgman Growth without Wall Contact

A detached growth mechanism has been proposed, which is similar to that proposed by Duffar et al. and used to study the current detached growth system. From numerical results, we can conclude that detached growth will more likely appear if the growth and wetting angles are large and meniscus is flat. Detached thickness is dependent on growth angle, wetting angle, and gap width and shape of the fins. The model can also explain why the detached growth will not happen for metals in which the growth angle is almost zero. Since the growth angle of CdZnTe cannot be changed, to promote detached growth, the number density of the fins should be low and the wetting angle should be high. Also, a much smaller gap width of the fins should be used in the ground experiment and the detached gap width is much smaller. The shape of the fins has minor influence on detached growth. An integrated numerical model for detached solidification has been developed combining a global heat transfer sub-model and a wall contact sub-model. The global heat transfer sub-model accounts for heat and mass transfer in the multiphase system, convection in the melt, macro-segregation, and interface dynamics. The location and dynamics of the solidification interface are accurately tracked by a multizone adaptive grid generation scheme. The wall contact sub-model accounts for the meniscus dynamics at the three-phase boundary. Simulations have been performed for crystal growth in a conventional ampoule and a designed ampoule to understand the benefits of detached solidification and its impacts on crystalline structural quality, e.g., stoichiometry, macro-segregation, and stress. From simulation results, both the Grashof and Marangoni numbers will have significant effects on the shape of growth front, Zn concentration distribution, and radial segregation. The integrated model can be used in designing apparatus and determining the optimal geometry for detached solidification in space and on the ground.

Larson, D. J., Jr.↗

Validation of SOLPS-ITER and EDGE2D-EIRENE simulations for H, D, and T JET ITER-like wall low-confinement mode plasmas

Both experiments and simulations with SOLPS-ITER and EDGE2D-EIRENE show that the onset of detachment for the low-field side (LFS) divertor – defined here as the line-averaged upstream density (〈n e 〉 edge ) at which the plasma flux to the LFS target (I LFS-plate ) starts to decrease with increasing 〈n e 〉 edge – is independent of the isotope mass. However, there are three major simulation-experiment discrepancies: (i) the absolute values of I LFS-plate and the electron density (n e ) in the LFS divertor at the onset of detachment are significantly lower in simulations, i.e., approximately a factor of 2 for I LFS-plate and a factor of 3-4 for n e ; (ii) the degree of detachment – defined here as the difference between I LFS-plate at the onset of detachment and at an 〈n e 〉 edge value close to the density limit – is smaller in simulations compared to experiments; and (iii) the experimentally observed larger degree of detachment for D and T plasmas compared to H plasmas cannot be clearly distinguished from the simulation results. There are strong indications that discrepancy (i) is to a large extent caused by neglecting Lyman-opacity effects in our simulations. The simulations predict a similar net volumetric recombination source for all isotopes due to the fact that molecule-activated recombination (MAR) compensates for the reduced electron–ion recombination (EIR) for H, whereas MAR is negligible for D and T. This similar net volumetric recombination source for all isotopes leads to an isotope-independent degree of detachment in simulations. An analysis of the Balmer-α and Balmer-$γ$ emission confirms the underestimate of MAR in simulations (especially for D and T) for the JET metallic wall, which was previously observed for devices with a carbon wall. The underestimate of MAR is an important cause for discrepancy (ii) and the fact that there is a stronger underestimate of MAR for D and T than for H explains discrepancy (iii). Extending the plasma grid to the vessel wall increases I LFS-plate and n e at the onset of detachment by 25%, and the EIR source increases by 80% in detached conditions. Hence, while the extended grid results are closer to the experimental observations, the previously described qualitative discrepancies still persist.

Balmer emission↗

Radiation-front position control with scenario adjustments during the first tungsten divertor operation on KSTAR

This study reports the first experimental demonstration of a radiation front-based detachment control system during the initial tungsten divertor campaign in KSTAR. The system employs real-time infrared video bolometry with tomographic reconstruction to track the inboard radiation-front position, which served as a feedback variable for impurity seeding. In a baseline scenario without pre-D 2 fueling, tungsten accumulation triggered core radiation surges and repetitive H–L back transitions. In contrast, with pre-D 2 fueling, detachment was stabilized by maintaining higher edge-localized mode frequency, suppressing core tungsten buildup, and reducing sputtering, thereby enabling sustained feedback control. The suitability of the inboard front position as a detachment control metric was confirmed by its correlation with the degree of detachment: with D 2 fueling the relation exhibited a broad hysteresis loop characteristic of momentum-loss-dominated detachment, whereas with N 2 fueling, it became narrow and nearly vertical, consistent with radiation-loss-dominated pinning. These results provide a proof-of-principle for radiation-front-based detachment control, demonstrating its viability as a control approach. At the same time, these results clarify that the detachment outcomes were further conditioned by impurity transport characteristics of tungsten divertor operation in KSTAR, providing guidance for future scenario optimization and controller development in tungsten devices.

KSTAR↗

Divertor characterization and access to dissipative divertor conditions in negative triangularity discharges in DIII-D

Reduced radial transport, short midplane-to-target parallel connection lengths, and a strong effect of cross-field drifts were responsible for the high densities required for detachment in strong negative triangularity (NT) configurations in DIII-D. Dissipative divertor conditions were achieved in NT discharges at different triangularity, injected power, plasma current, and toroidal field direction. Differences between negative and positive triangularity (PT) discharges are analyzed in this paper to understand the requirements for access to detached divertor conditions: power balance, geometry, radial transport and effect of cross-field particle drifts. Parametric dependencies of access to detachment on plasma current and power flowing into the scrape-off layer remained similar in negative and PT and impurity seeding was observed to reduce the density needed to detach by up to 30% at the expense of core impurity dilution. The impact of triangularity on core-edge integration was tested varying bottom triangularity at fixed top triangularity. The high density needed to detach was not intrinsic to the NT edge as shapes with positive lower triangularity and negative upper triangularity were able to detach at lower upstream densities while maintaining an ELM-free NT edge. Confinement degradation at deeper detachment levels was however observed in all NT shapes, often associated with radiation instabilities.

detachment↗