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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Modeling of surface-state induced inter-electrode isolation of n -on- p devices in mixed-field and γ -irradiation environments

Position sensitive n-on-p silicon sensors will be utilized in the tracker and in the High Granularity Calorimeter (HGCAL) of the Compact Muon Solenoid (CMS) experiment at High Luminosity Large Hadron Collider (HL-LHC). The detrimental effect of the radiation-induced accumulation of positive net oxide charge on position resolution in n-on-p sensors has typically been countered by the application of isolation implants like p-stop or p-spray between n + -electrodes. In addition to the positively charged layer inside the oxide and close to the Si/SiO 2 -interface, surface damage introduced by ionizing radiation in SiO 2 -passivated silicon particle detectors includes the accumulation of trapped-oxide-charge and interface traps. A previous study of either n/γ (mixed field)- or γ-irradiated Metal-Oxide-Semiconductor (MOS) capacitors showed evidence of substantially higher introduction rates of acceptor- and donor-type deep interface traps (N it,acc/don ) in mixed-field environment. Here, in this work, an inter-pad and -strip resistance (or resistivity (ρ int )) simulation study of n-on-p sensors with and without p-stop isolation implants was conducted for both irradiation types. Higher levels of ρint showed correlation to higher densities of deep N it,acc/don , with the inter-pad isolation performance of the mixed-field irradiated sensors becoming independent of the presence of p-stop implant between the n + - electrodes up to about 100 kGy. The low introduction rates of deep N it,acc/don in γ-irradiated sensors resulted in high sensitivity of ρ int to the presence and peak doping of p-stop above the lowest dose of about 7 kGy in the study. As a consequence of the advantageous influence of radiation-induced accumulation of deep N it on the inter-electrode isolation, position sensitive n-on-p sensors without isolation implants may be considered for future HEP-experiments where the radiation is largely due to hadrons.

Akchurin, N. [Texas Tech Univ., Lubbock, TX (Unite↗
DOE OSTI2024

Full-torus impurity transport simulation in boron powder injection experiments in the Large Helical Device

The toroidal distribution of boron deposition on plasma-facing components (PFCs) in boron powder injection using an impurity power dropper (IPD) was investigated by full-torus simulation and observations in a systematic plasma density-scan experiment. The images of the ablation of dropped boron powders observed with a visible CCD camera were consistently explained by the simulations of the ablation positions of the boron powders considering the size distribution. Simulations assuming full-torus boron deposition on the PFCs did not reproduce the observed intensity profile of boron emission lines for higher plasma densities. It indicated that the density of boron deposited on PFCs installed toroidally far from the IPD was low for higher plasma densities due to the change in the ablation positions of the boron powders toward the outboard side. The experimental results verified the previous full-torus simulation of the toroidal distribution of the boron deposition in both lower and higher plasma densities.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Failure investigation and mitigation after experimental research reactor fuel plate deformation in an irradiation device

Experimental research reactor fuel testing is conducted in the Belgian Reactor 2 (BR2) of the Belgian Nuclear Research Centre (SCK CEN) in dedicated irradiation vehicles or rigs. One such vehicle allows flat full-size fuel plates to be irradiated by inserting them into slotted baskets that captures a narrow portion of the longitudinal edges of the plates. The motion of the fuel plates within the baskets is possible within the narrow slots and thus, the plate is considered to be unattached. The design intentionally omits fixing mechanisms of the fuel plates to the baskets to facilitate the inspection and repositioning of the plates between the irradiation cycles and the accommodation of thermal expansion of the plates in the lateral direction. However, loosely inserted fuel plates have weak structural boundary conditions allowing for larger out-of-plane deflections caused by hydrodynamic loads exerted by the flowing coolant, as compared to those of fixed plates. Unexpected large deformations of plates occurred in several irradiation cycles that further resulted in a loss of cladding integrity. These deformations could not be attributed to a single source. This triggered a series of thermal hydraulic, structural, and fluid-structure interaction analyses aiming at understanding the observed phenomenon. The analyses revealed that, for a certain combination of unfavorable manufacturing and assembly tolerances, fuel plate edges could escape out of the slots in the irradiation basket due to the hydrodynamic load. Subsequently, the plate could become wedged inside the basket coolant channel opening. This resulted in reduced coolant flow and accelerated temperature increase and thermal expansion of the plate while under irradiation. This unfavorable feedback loop could then lead to excessive plate surface temperatures, deformed plates and cladding failure, as was observed in the experiments. These analyses not only provided a probable cause of the fuel plate failures, but also resulted in a new and improved design of the irradiation basket to avoid these issues in the future. In conclusion, a series of recent successful irradiations confirm that the sources of failures were identified correctly, and the implemented mitigations were adequate.

BR2↗
DOE OSTI2025

Photon counting with intensified charge coupled device (ICCD) – I. In-depth detector characterization

While the adsorption properties of transition metal catalysts have been widely studied, leading to the discovery of various scaling relations, descriptors of catalytic activity, and well-established computational models, a similar understanding of semiconductor catalysts has not yet been achieved. In this work, we present a high-throughput density functional theory investigation into the adsorption properties of 5 oxides of interest to the photocatalytic CO 2 reduction reaction: TiO 2 (rutile and anatase), SrTiO 3 , NaTaO 3 , and CeO 2 . Using a systematic approach, we exhaustively identify unique surfaces and construct adsorption structures to undergo geometry optimizations. We then perform a data-driven analysis, which reveals the presence of weak adsorption energy scaling relations, the propensity of adsorbates of interest to interact with oxygen surface sites, and the importance of slab deformation upon adsorption. Our findings are presented in the context of experimental observations and in comparison to previously studied classes of catalysts, such as pure metals and tellurium-containing semiconductors, and reinforce the need for a comprehensive approach to the study of site-specific surface phenomena on semiconductors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant

As the feature size of microelectronic circuits is scaling down to nanometer order, the increasing interconnect crosstalk, resistance-capacitance (RC) delay and power consumption can limit the chip performance and reliability. To address these challenges, new low-k dielectric (k < 2) materials need to be developed to replace current silicon dioxide (k = 3.9) or SiCOH, etc. However, existing low-k dielectric materials, such as organosilicate glass or polymeric dielectrics, suffer from poor thermal and mechanical properties. Two-dimensional polymers (2DPs) are considered promising low-k dielectric materials because of their good thermal and mechanical properties, high porosity and designability. Here, we report a chemical-vapor-deposition (CVD) method for growing fluoride rich 2DP-F films on arbitrary substrates. We show that the grown 2DP-F thin films exhibit ultra-low dielectric constant (in plane k = 1.85 and out-of-plane k = 1.82) and remarkable mechanical properties (Young’s modulus > 15 GPa). We also demonstrated the improved performance of monolayer MoS 2 field-effect-transistors when utilizing 2DP-F thin films as dielectric substrates.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Visualizing electronic structure of twisted bilayer MoTe 2 in devices

The pursuit of emergent quantum phenomena lies at the forefront of modern condensed matter physics. A recent breakthrough in this arena is the discovery of the fractional quantum anomalous Hall effect (FQAHE) in twisted bilayer MoTe₂ (tbMoTe₂), marking a paradigm shift and establishing a versatile platform for exploring the intricate interplay among topology, magnetism, and electron correlations. While significant progress has been made through both optical and electrical transport measurements, direct experimental insights into the electronic structure – crucial for understanding and modeling this system – have remained elusive. Here, using spatially and angle-resolved photoemission spectroscopy (μ-ARPES), we directly map the electronic band structure of tbMoTe₂. We identify the valence band maximum, whose partial filling underlies the FQAHE, at the K points, situated approximately 150 meV above the Γ valley. By fine-tuning the doping level via in-situ alkali metal deposition, we also resolve the conduction band minimum at the K point, providing direct evidence that tbMoTe₂ exhibits a direct band gap – distinct from all previously known moiré bilayer transition metal dichalcogenide systems. These results offer critical insights for theoretical modeling and advance our understanding of fractionalized excitations and correlated topological phases in this emergent quantum material.

Chen, Cheng [Univ. of Oxford (United Kingdom)]↗