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Formula with one adjustable parameter relates electrical resistivity of sintered metal plate to porosity of plate. Sintered plate formed by heating compressed metal powder- without melting- until particles adhere. Sintered nickel plates of high porosity used as substrates for electrodes in nickel/ cadmium batteries.
Graphite fluoride fibers can be produced by fluorinating pristine or intercalated graphite fibers. The higher the degree of graphitization of the fibers, the higher the temperature needed to reach the same degree of fluorination. Pitched based fibers were fluorinated to flourine-to-carbon atom rations between 0 and 1. The graphite fluoride fibers with a fluorine-to-carbon atom ration near 1 have extensive visible structural damage. On the other hand, fluorination of fibers pretreated with bromine or fluorine and bromine result in fibers with a fluorine-to-carbon atom ratio nearly equal to 0.5 with no visible structural damage. The electrical resistivity of the fibers is dependent upon the fluorine to carbon atom ratio and ranged from .01 to 10 to the 11th ohm/cm. The thermal conductivity of these fibers ranged from 5 to 73 W/m-k, which is much larger than the thermal conductivity of glass, which is the regular filler in epoxy composites. If graphite fluoride fibers are used as a filler in epoxy or PTFE, the resulting composite may be a high thermal conductivity material with an electrical resistivity in either the insulator or semiconductor range. The electrically insulating product may provide heat transfer with lower temperature gradients than many current electrical insulators. Potential applications are presented.
Emerging wide-bandgap (WBG) semiconductor devices such as silicon carbide (SiC) metal–oxide semiconductor field-effect transistors (MOSFETs) and gallium nitride high-electron-mobility transistors can handle high power in reduced semiconductor areas better than conventional Si-based devices owing to superior material properties. With increased power loss density in a WBG-based converter and reduced die size in power modules, thermal management of power devices must be optimized for high performance. Here, we present a graphite-embedded insulated metal substrate (thermally-annealed-pyrolytic-graphite-embedded insulated metal substrate—IMSwTPG) designed for WBG power modules. Theoretical thermal performance analysis of graphite-embedded metal cores is presented, with design details for IMSwTPG with embedded graphite to replace a direct-bonded copper (DBC) substrate. The proposed IMSwTPG is compared with an aluminum nitride-based DBC substrate using finite-element thermal analysis for steady-state and transient thermal performance. The solutions’ thermal performances are compared under different coolant temperature and thermal loading conditions, and the proposed substrate's electrical performance is validated with static and dynamic characterization. Using graphite-embedded substrates, junction-to-case thermal resistance of SiC MOSFETs can be reduced up to 17%, and device current density can be increased by 10%, regardless of the thermal management strategy used to cool the substrate. Reduced transient thermal impedance of up to 40% of dies owing to increased heat capacity is validated in transient thermal simulations and experiments. The half-bridge power module's electrical performance is evaluated for on -state resistance, switching performance, and switching loss at three junction temperature conditions. The proposed substrate solution has minimal impact on conduction and switching performance of SiC MOSFETs.
An improved electrical contact resistance (ECR) model for elastic rough electrode contact is proposed, incorporating the effects of asperity interactions and temperature rise by frictional and joule heating. The analytical simulation results show that the ECR decreases steeply at the beginning of the contact between Al and Cu. However, it becomes stabilized after reaching a specific contact force. It is also found that the longer elapsed sliding contact time, the higher ECR due to the increase in electrical resistivity of electrode materials by the frictional temperature rise at the interface. The effects of surface roughness parameters on ECR are studied through the 3 2 full-factorial design-of-experiment analysis. Based on the two representative roughness parameters, i.e., root-mean-square (rms) roughness and asperity radius, their individual and coupled effects on the saturated ECR are examined. The saturated ECR increases with the rms roughness for a rough machined surface condition, but it is hardly affected by the asperity radius. On the other hand, the saturated ECR increases with both the rms roughness and the asperity radius under a smooth thin film surface condition.
Here, magnetic, specific heat, and electrical transport measurements of Gd 4 ScGe 4 single crystals reveal sharp, discontinuous, nearly anhysteretic first-order magnetostructural transformation at $T_C$ = 63 K. The electrical resistivity exhibits two distinct regions where it increases with decreasing temperature: between $T_C$ and 120 K, as well as below 3 K; electronic transport remains conventionally metallic at all other measured temperatures, up to 325 K. The dispersion of charge carriers due to electron-paramagnon scattering is the likely reason for the observed anomalous transport above $T_C$. Additionally, the existence of intermediate lattice states near the transition recognized by the spike in the interslab Ge-Ge distances is expected to reduce the mean free path of the electrons contributing to the unusual behavior of the electrical resistivity between $T_C$ and 120 K. Beyond conventional electronic and lattice terms, the third component of likely magnetic origin contributes to the low-temperature heat capacity; the presence of spin waves may be responsible for the increased electron-magnon scattering below 3 K. Minor magnetocrystalline anisotropy is observed with the b axis as the easy magnetization axis in Gd 4 ScGe 4 . A negative deviation from linearity in the temperature dependence of the inverse magnetic susceptibility is detected below 150 K.
Abstract Bentonite clay is widely used in engineered barrier systems for the permanent disposal of high‐level radioactive waste due to its low permeability, high swelling capacity, and thermal stability. However, the complex thermal‐hydrological‐mechanical (THM) processes induced by heating from decaying radioactive waste and hydration from surrounding rock can lead to heterogeneous changes that are difficult to measure and predict. This study develops an Electrical Resistivity Tomography (ERT)‐based framework for monitoring THM processes, progressing from sample‐scale to bench‐scale tests, to inform field‐scale applications. Sample‐scale tests analyzed small bentonite samples under controlled variations in water content, temperature, and porosity to establish fundamental resistivity relationships. Bench‐scale tests involved larger bentonite columns subjected to heating (up to 200°C) and hydration under controlled pressure, simulating repository conditions. ERT measurements, complemented by X‐ray CT imaging, temperature monitoring, and tracing sensors, revealed coupled THM processes, such as hydration‐induced compression, swelling, and thermal gradients, leading to complex resistivity patterns. The results demonstrate the potential of ERT for capturing THM‐induced resistivity changes, though challenges remain in upscaling and quantitative analysis. This study evaluates laboratory test capabilities and proposes future improvements for understanding THM‐induced resistivity responses. A conceptual framework for ERT implementation in field‐scale monitoring is presented, synthesizing findings from both scales and exploring how ERT data can inform long‐term modeling and reduce prediction uncertainties. Overall, this ERT‐based framework offers a robust method for monitoring bentonite buffers, aiding in early issue detection and supporting the safe long‐term disposal of radioactive waste in geological repositories, while highlighting the need for future development. Plain Language Summary Bentonite clay is crucial in engineered barrier systems (EBS) for containing high‐level radioactive waste due to its ability to absorb water, swell, seal and remain stable under high temperatures. When bentonite absorbs water and heats up from radioactive decay, it experiences complex changes in its physical and mechanical properties. Understanding these changes is important for ensuring the long‐term safety and effectiveness of EBS. This study used Electrical Resistivity Tomography (ERT), a non‐invasive method that measures electrical conductivity to monitor these changes during laboratory experiments. The ERT data revealed significant variations in resistivity corresponding to changes in water content, temperature, and density, providing detailed spatial and temporal insights into the behavior of bentonite. These findings enhance our ability to predict the long‐term performance of bentonite barriers, ensuring the safe containment of radioactive waste. By improving our understanding of bentonite's behavior, this research supports the development of more reliable and effective barrier systems for radioactive waste disposal, protecting the environment and public health. Key Points ERT monitoring was employed to capture resistivity changes in bentonite during controlled heating and hydration experiments, providing insights into THM processes ERT data reveal significant resistivity changes correlated with water content, temperature, and mechanical effects, enhancing the understanding of THM dynamics in bentonite This study explores the potential of the framework for application in field‐scale EBS monitoring, emphasizing the need for integrating additional geophysical methods for comprehensive subsurface imaging
Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat treatment) contacts made to thin emitter (0.15 micrometer) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 micrometer) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.
Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat-treatment) contacts made to thin emitter (0.15 microns) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance, did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 microns) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.
The 4d-electron trimer lattice Ba₄Nb₁₋ₓRu₃₊ₓO₁₂ exhibits either a quantum spin liquid (QSL) or a heavy-fermion strange metal (HFSM) phase, depending on Nb content. In the QSL state, itinerant spinons act as effective heat carriers, enhancing thermal conductivity. Strikingly, applying a magnetic field up to 14 T causes an abrupt, up-to-5000% increase in heat capacity below 150 mK, disrupting the linear temperature dependence typical of both phases. Meanwhile, AC susceptibility and electrical resistivity remain nearly unchanged, while thermal conductivity drops by up to 40% below 4 K. These results suggest spinons, despite being charge-neutral, are highly sensitive to magnetic fields at low temperatures. We propose that the magnetic field could induce Anderson localization of spinons, creating emergent non-magnetic two-level systems responsible for the Schottky-like anomaly in heat capacity. These findings point to a previously unexplored regime of spinon dynamics, potentially governed by field-induced localization and distinct from conventional magnetic or transport signatures.
The literature, applicable theory and finally an experimental program were used to identify new candidate alloy systems for use as the electrical resistance elements in static strain gages up to 1250K. The program goals were 50 hours of use in the environment of a test stand gas turbine engine with measurement accuracies equal to or better than 10 percent of full scale for strains up to + or - 2000 microstrain. As part of this effort, a computerized electrical resistance measurement system was constructed for use at temperatures between 300K and 1250K and heating and cooling rates of 250K/min and 10K/min. The two best alloys were an iron-chromium-aluminum alloy and a palladium base alloy. Although significant progress was made, it was concluded that a considerable additional effort would be needed to fully optimize and evaluate these candidate systems.
Experimental measurements of the electrical resistivity vs temperature of methane vapor grown carbon fibers are presented. The fibers are heat treated from 1100 C (as-grown) to 3000 C. Data are fit to a standard two band model, which yields values for boundary scattering limited electron mobility, in-plane mean free path, energy band overlap, and total carrier density. The data are also fit to an ellipsoidal band model, where data fits yield effective masses, band overlap, Fermi velocity, phonon contributions to scattering, and ionized impurity scattering rates.
Fusion welding for thermoplastic composite wind turbine blades is being investigated as a replacement for adhesives in bond lines to reduce manufacturing time and cost and to promote ease of recyclability. Resistance welding uses an electrically conductive material, such as carbon fiber, embedded in the bond line to heat the joining surfaces and fuse them together under pressure. One main challenge with fusion joining for large wind blades is the ability to use this conductive heating element in the bond line while still protecting the blade from the catastrophic effects of a lightning strike. This paper outlines the design and manufacturing of a lightning protection system for a 5-m-long thermally welded blade tip. The outcomes of high voltage and high current lightning testing applied to the 5 m blade tip show that the proposed design was able to protect the fusion welded bond lines from significant lightning damage.
The compound SrNi 2 P 2 is unique among the ThCr 2 Si 2 class since it exhibits a temperature-induced transition upon cooling from an uncollapsed tetragonal (ucT) state to a one-third-collapsed orthorhombic (tcO) state where one out of every three P-rows bond across the Sr layers. This compound is also known for exhibiting bulk superconductivity below 1.4 K at ambient pressure. Here, in this paper, we report on the effects of Rh substitution in Sr(Ni 1-x Rh x ) 2 P 2 on the structural and superconducting properties. We studied the variation of the nearest P-P distances as a function of the Rh fraction at room temperature, as well as its temperature dependence for selected compositions. We find that increasing the Rh fraction leads to a decrease in the transition temperature between the ucT and tcO states, until a full suppression of the tcO state for x ≥ 0.166. The superconducting transition first remains nearly insensitive to the Rh fraction, and then it increases to 2.3 K after the tcO state is fully suppressed. These results are summarized in a phase diagram, built upon the characterization by energy dispersive x-ray spectroscopy, x-ray diffraction, resistance, magnetization, and specific heat measurements done on crystalline samples with varying Rh content. The relationship between band structure, crystal structure, and superconductivity is discussed based on previously reported band structure calculations on SrRh 2 P 2 . Moreover, the effect of Rh fraction on the stress-induced structural transitions is also addressed by means of strain-stress studies done by uniaxial compression of single-crystalline micropillars of Sr(Ni 1-x Rh x ) 2 P 2 .
A bistable switching element is made of a material whose electrical resistance reversibly decreases in response to intercalation by positive ions. Flow of positive ions between the bistable switching element and a positive ion source is controlled by means of an electrical potential applied across a thermal switching element. The material of the thermal switching element generates heat in response to electrical current flow therethrough, which in turn causes the material to undergo a thermal phase transition from a high electrical resistance state to a low electrical resistance state as the temperature increases above a predetermined value. Application of the electrical potential in one direction renders the thermal switching element conductive to pass electron current out of the ion source. This causes positive ions to flow from the source into the bistable switching element and intercalate the same to produce a non-volatile, low resistance logic state. Application of the electrical potential in the opposite direction causes reverse current flow which de-intercalates the bistable logic switching element and produces a high resistance logic state.
Abstract Magnetic and electronic properties of quantum materials heavily rely on the crystal structure even in the same chemical compositions. In this study, it is demonstrated that a layered tetragonal EuCd 2 Sb 2 structure can be obtained by treating bulk trigonal EuCd 2 Sb 2 under high pressure (6 GPa) and high temperature (600 °C). Magnetization measurements of the newly formed layered tetragonal EuCd 2 Sb 2 confirm an antiferromagnetic ordering with Neel temperature ( T N ) around 16 K, which is significantly higher than that ( T N ≈ 7 K) of trigonal EuCd 2 Sb 2 , consistent with heat capacity measurements. Moreover, bad metal behavior is observed in the temperature dependence of the electrical resistivity and the resistivity shows a dramatic increase around the Neel temperature. Electronic structure calculations with local density approximation dynamic mean–field theory (LDA+DMFT) show that this material is strongly correlated with well‐formed large magnetic moments, due to Hund's coupling, which is known to dramatically suppress the Kondo scale.
A recent study has demonstrated that MoB 2 , transforming to the same structure as MgB 2 (P 6 /mmm), superconducts at temperatures above 30 K near 100 GPa [C. Pei et al., Natl. Sci. Rev. 10, nwad034 (2023)], and Nb substitution in MoB 2 stabilizes the P6/mmm structure down to ambient pressure [A. C. Hire et al., Phys. Rev. B 106, 174515 (2022)]. Here, the current work explores the high-pressure superconducting behavior of Nb-substituted MoB 2 (Nb 0.25 Mo 0.75 B 2 ). High-pressure x-ray diffraction measurements show that the sample remains in the ambient pressure P6/mmm structure to at least 160 GPa. Electrical resistivity measurements demonstrate that from an ambient pressure T c of 8K (confirmed by specific heat to be a bulk effect), the critical temperature is suppressed to 4 K at 50 GPa, before gradually rising to 5.5 K at 170 GPa. The critical temperature at high pressure is thus significantly lower than that found in MoB 2 under pressure (30 K), revealing that Nb substitution results in a strong suppression of the superconducting critical temperature. Our calculations indeed find a reduced electron-phonon coupling in Nb 0.25 Mo 0.75 B 2 , but do not account fully for the observed suppression, which may also arise from inhomogeneity and enhanced spin fluctuations.
Polycrystalline graphite contains multi-scale defects, which are difficult to anneal thermally because of the extremely high temperatures involved in the manufacturing process. In this study, we demonstrate annealing of nuclear graphite NBG-18 at temperatures below 28 °C, exploiting the electron wind force, a non-thermal stimulus. High current density pulses were passed through the specimens with a very low-duty cycle so that the electron momentum could mobilize the defects without heating the specimen. The effectiveness of this technique is presented with a significant decrease in electrical resistivity, defect counts from X-ray computed tomography, Raman spectroscopy, and nanoindentation-based mechanical characterization. Such multi-modal evidence highlights the feasibility of nanoscale defect control at temperatures about two orders of magnitude below the graphitization temperature.
Low temperature electrical resistivity was used to determine the material variability (1) between different manufacturers, (2) between different heats from the same manufacturer, and (3) within a given heat for Al 2024, Al-5% Mg alloys, Inconel 718, A286 stainless, and AISI 316. Generally, the coefficient of variation for solution annealed alloys ranged from 1.2 to 14% between manufacturers, 0.8 to 5.1% between heats, and 0.1 to 1.6% within a heat with stainless steels at the low ends and Al 2024 at the high ends. The variability is increased if the material is in a precipitation-hardened condition. A statistical analysis suggests that the variability within a heat is non-normal.