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All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Cross sections for electron impact excitation of the b 3Sigma(+)u state of H2 - An application of the Schwinger multichannel variational method

In this and the two accompanying letters, the results of calculations of the cross sections for electron impact excitation of the b 3Sigma(+)u state of H2, for collision energies from near threshold to 30 eV, are presented. These results are obtained using a multichannel extension of the Schwinger variational principle at the two-state level. The quantitative agreement between the integral cross sections of these three studies is very good. Inclusion of correlation terms in the scattering wavefunctions, which relax the orthogonality between bound and continuum orbitals, is seen to affect the cross sections substantially. Although a comparison of these calculated cross sections with available experimental data is encouraging, some seious discrepancies exist.

Lima, M. A. P.↗
NASA NTRS1989

Electron positron pair winds and the Eddington limit

The dynamics of pair winds in the environment of the central engine of Active Galactic Nuclei (AGN) are investigated assuming super Eddington accretion onto black holes. If the accretion is assumed to be spherically symmetric with the accreting matter occurring in discrete cool blobs, and pairs are produced by a nonthermal mechanism, these pairs are blown out by radiation pressure if the coupling between the pairs and accreting blobs is not complete. The coupling also determines the escaping luminosity. If the maximal coupling constraint is relaxed, then a qualitative argument shows that the classical Eddington limit may be exceeded. When the pairs are considered to be noninteracting particles, the outflow is optically thin. Frame dependent effects are considered. Equations are derived considering pair production in the rest frame of the wind and also in the rest frame of the accreting cool blobs. The hydrodynamic equations are integrated numerically.

Leighly, K. M.↗
NASA NTRS1975

The surface structure of titanium and its interaction with bromine and chlorine

The surface structure and composition of titanium have been studied by electron diffraction and Auger electron spectroscopy in the temperature range 25 to 850 C. Atomically clean, well-defined Ti surfaces were obtained by a combination of argon ion sputtering and thermal treatment at 700 to 800 C. A series of surface superstructures was observed as the crystal temperature was gradually decreased. The development of the superstructures is best explained as due to surface reconstruction as a result of surface relaxation. The interaction of bromine and chlorine vapors with clean Ti surfaces was investigated in the temperature range 25 to 500 C. Bromine exposure at room temperature gave rise to an amorphous surface layer, which on annealing transformed into an epitaxial TiBr2 structure. Chlorine interaction resulted in the formation of an epitaxial TiCl3 on both cold and hot Ti surfaces. Surface impurities inhibited the chemical interaction process on the Ti surface.

Khan, I. H.↗
NASA NTRS1993

Electron beam flourescence measurements in low density free jets of heated nitrogen

Rotational temperatures have been measured in heated free jet expansions of low density nitrogen using the electron beam flourescence technique. Spectroscopic measurements of the (0,0) band of the first negative system of nitrogen revealed the rotational nonequilibrium behavior in the flow field upstream of and through the Mach disk, as well as the flow field farther downstream. These results are compared to free jet expansion data and computations regarding Mach disk location and terminal rotational temperature. Comparisons indicate a rotational relaxation-collision number of about 3. Both measurements and calculations show that these flow fields are generated from stagnation conditions of 240 to 475 Torr-mm and 700 to 1325 K. Results are also presented for shock thickness based on rotational temperature.

Gochberg, L. A.↗
NASA NTRS2004

Accurate Cross Sections for Excitation of Resonance Transitions in Atomic Oxygen

Electron collision excitation cross sections for the resonance 2p(sup)4 (sup 3)P-2p(sup 3)3s (sup 3)S(sup 0), 2p(sup 4) (sup 3)P-2p(sup 3)3d (sup 3)D(sup 0), 2p4 (sup 3)P-2p(sup 3)3s (sup 3)D(sup 0), 2p(sup 4) (sup 3)P-2p(sup 3)3s (sup 3)P(sup 0) and 2p(sup 4) (sup 3)P-2s2p(sup 5) (sup 3)P(sup 0) transitions have been calculated by using the R matrix with a pseudostates approach for incident electron energies from near threshold to 100 eV. The excitation of these transition sgives rise to strong atomic oxygen emission features at 1304, 1027, 989, 878, and 792 Angstrom in the spectra of several planetary atmospheres. We included 22 spectroscopic bound and autoionizing states and 30 pseudostates in the close-coupling expansion. The target wave functions are chosen to properly account for the important correlation and relaxation effects. The effect of coupling to the continuum is included through the use of pseudostates. The contribution of the ionization continuum is significant for resonance transitions. Measured absolute direct excitation cross sections of 0 I are reported by experimental groups from the Jet Propulsion Laboratory and Johns Hopkins University. Good agreement is noted for the 2p(sup)4 (sup 3)P-2p(sup 3)3s (sup 3)S(sup 0) transition (lambda 1304 Ang) with measured cross sections from both groups that agree well with each other. There is disagreement between experiments for other transitions. Our results support the measured cross sections from the Johns Hopkins University for the 2p(sup 4) (sup 3)P-2p(sup 3)3d (sup 3)D(sup 0) and 2p4 (sup 3)P-2p(sup 3)3s (sup 3)D(sup 0) transitions, while for the 2p4 (sup 3)P-2p(sup 3)3s (sup 3)D(sup 0) transition the agreement is switched to the measured cross sections from the Jet Propulsion Laboratory.

Tayal, S. S.↗
NASA NTRS1994

Electronic characterization of defects in narrow gap semiconductors

We use a Green's function technique to calculate the position of deep defects in narrow gap semiconductors. We consider substitutional (including antisite), vacancy, and interstitial (self and foreign) deep defects. We also use perturbation theory to look at the effect of nonparabolic bands on shallow defect energies and find nonparabolicity can increase the binding by 10 percent or so. We consider mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS). For substitutional and interstitial defects we look at the situation with and without relaxation. For substitutional impurities in MCT, MZT, and MZS, we consider x (the concentration of Cd or Zn) in the range 0.1 less than x less than 0.3 and also consider appropriate x so E(sub g) = 0.1 eV for each of the three compounds. We consider several cation site s-like deep levels and anion site p-like levels. For E(sub g) = 0.1 eV, we also consider the effects of relaxation. Similar comments apply to the interstitial deep levels whereas no relaxation is considered for the ideal vacancy model. Relaxation effects can be greater for the interstitial than the substitutional cases. Specific results are given in figures and tables and comparison to experiment is made in a limited number of cases. We find, for example, that I, Se, S, Rn, and N are possible cation site, s-like deep levels in MCT and Zn and Mg are for anion site, p-like levels (both levels for substitutional cases). The corresponding cation and anion site levels for interstitial deep defects are (Au, Ag, Hg, Cd, Cu, Zn) and (N, Ar, O, F). For the substitutional cases we have some examples of relaxation moving the levels into the band gap, whereas for the interstitial case we have examples where relaxation moves it out of the band gap. Future work involves calculating the effects of charge state interaction and seeing the effect of relaxation on vacancy levels.

Patterson, James D.↗
NASA NTRS1990

Some optical and electron microscope comparative studies of excimer laser-assisted and nonassisted molecular-beam epitaxically grown thin GaAs films on Si

The quality of GaAs thin films grown via MBE under pulsed excimer laser irradiation on Si substrates is examined in both laser-irradiated and nonirradiated areas using Raman scattering, Rayleigh scattering, and by photoluminescence (PL), as a function of temperature, and by TEM. The temperature dependence of the PL and Raman peak positions indicates the presence of compressive stress in the thin GaAs films in both laser-irradiated and nonirradiated areas. This indicates incomplete homogeneous strain relaxation by dislocations at the growth temperature. The residual compressive strain at the growth temperature is large enough such that even with the introduction of tensile strain arising from the difference in thermal expansion coefficients of GaAs and Si, a compressive strain is still present at room temperature for these thin GaAs/Si films.

Lao, Pudong↗
NASA NTRS1995

The growth of low band-gap InAs on (111)B GaAs substrates

The use of low band-gap materials is of interest for a number of photovoltaic and optoelectronic applications, such as bottom cells of optimized multijunction solar cell designs, long wavelength light sources, detectors, and thermophotovoltaics. However, low band-gap materials are generally mismatched with respect to lattice constant, thermal expansion coefficient, and chemical bonding to the most appropriate commercially available substrates (Si, Ge, and GaAs). For the specific case of III-V semiconductor heteroepitaxy, one must contend with the strain induced by both lattice constant mismatch at the growth temperature and differences in the rates of mechanical deformation during the cool down cycle. Several experimental techniques have been developed to minimize the impact of these phenomena (i.e., compositional grading, strained layer superlattices, and high-temperature annealing). However, in highly strained systems such as InAs-on-GaAs, three-dimensional island formation and large defect densities (greater than or equal to 10(exp 8)/ cm(exp -2)) tend to limit their applicability. In these particular cases, the surface morphology and defect density must be controlled during the initial stages of nucleation and growth. At the last SPRAT conference, we reported on a study of the evolution of InAs islands on (100) and (111)B GaAs substrates. Growth on the (111)B orientation exhibits a number of advantageous properties as compared to the (100) during these early stages of strained-layer epitaxy. In accordance with a developing model of nucleation and growth, we have deposited thin (60 A - 2500 A), fully relaxed InAs films on (111)B GaAs substrates. Although thicker InAs films are subject to the formation of twin defects common to epitaxy on the (111)B orientation, appropriate control of the growth parameters can greatly minimize their density. Using this knowledge base, InAs films up to 2 microns in thickness with improved morphology and structural quality have been grown on (111)B GaAs substrates, thereby enabling the measurement of electronic and optical properties.

Welser, R. E.↗
NASA NTRS1984

The atomic geometries of GaP(110) and ZnS(110) revisited - A structural ambiguity and its resolution

The atomic geometries of GaP(110) and ZnS(110) are reexamined using the R-factor minimization procedure, developed for GaAs(110) and previously applied to GaSb(110), ZnTe(110), InAs(110), and AlP(110), to analyze experimental elastic low-energy electron diffraction intensities. Unlike most of the earlier cases, both GaP(110) and ZnS(110) exhibit two distinct minimum-Rx structures which cannot be distinguished by analysis of the shapes of the intensity profiles alone. One region of best-fit structures exhibits top-layer displacements normal to the surface characterized by a small bond-length-conserving, top-layer rotation (omega aproximately 2-3 deg), a small relaxation of the top layer away from the surface, and a 10 percent expansion of the top-layer bond length. The other region of best-fit structures is the conventional one: nearly bond-length-conserving rotations of omega = 26-28 deg in the top layer and a small (approximately 0.1 A) contraction of the uppermost layer spacing. This ambiguity may be removed, however, by consideration of the integrated beam intensities. The conventional region of structural parameters provides a decisively better description of the relative magnitudes of the integrated beam intensities and hence is the preferred structure.

Duke, C. B.↗
NASA NTRS2006

CFD Growth of 3C-SiC on 4H/6H Mesas

This article describes growth and characterization of the highest quality reproducible 3C-SiC heteroepitaxial films ever reported. By properly nucleating 3C-SiC growth on top of perfectly on-axis (0001) 4H-SiC mesa surfaces completely free of atomic scale steps and extended defects, growth of 3C-SiC mesa heterofilms completely free of extended crystal defects can be achieved. In contrast, nucleation and growth of 3C-SiC mesa heterofilms on top of 4H-SiC mesas with atomic-scale steps always results in numerous observable dislocations threading through the 3C-SiC epilayer. High-resolution X-ray diffraction and transmission electron microscopy measurements indicate non-trivial in-plane lattice mismatch between the 3C and 4H layers. This mismatch is somewhat relieved in the step-free mesa case via misfit dislocations confined to the 3C/4H interfacial region without dislocations threading into the overlying 3C-SiC layer. These results indicate that the presence or absence of steps at the 3C/4H heteroepitaxial interface critically impacts the quality, defect structure, and relaxation mechanisms of single-crystal heteroepitaxial 3C-SiC films.

Neudeck, Philip G.↗
NASA NTRS1986

A polarisation correlation study of the excitation of the H2 d3Piu (v1 = 0, N1 = 1) level by electron impact

Full details are given of an experiment in which the three normalized Stokes' parameters characterizing the decay of the electron impact excited d3Piu (v1 = 0, N1 = 1) rotational level of H2 were determined in an electron-photon coincidence experiment at 25 eV impact energy and over the angular range of 20-60 deg. An analysis shows how these parameters are related to the state multipoles characterizing the excited state. The rather low degree of coherence which was observed is consistent with various depolarizing effects, namely the averaging over magnetic sublevels which occurred in both the excitation and decay channels and also the perturbations due to fine and hyperfine structure relaxations.

Mcconkey, J. W.↗
NASA NTRS1993

Computer modeling of pulsed CO2 lasers for lidar applications

The object of this effort is to develop code to enable the accurate prediction of the performance of pulsed transversely excited (TE) CO2 lasers prior to their construction. This is of particular benefit to the NASA Laser Atmospheric Wind Sounder (LAWS) project. A benefit of the completed code is that although developed specifically for the pulsed CO2 laser much of the code can be modified to model other laser systems of interest to the lidar community. A Boltzmann equation solver has been developed which enables the electron excitation rates for the vibrational levels of CO2 and N2, together with the electron ionization and attachment coefficients to be determined for any CO2 laser gas mixture consisting of a combination of CO2, N2, CO, He and CO. The validity of the model has been verified by comparison with published material. The results from the Boltzmann equation solver have been used as input to the laser kinetics code which is currently under development. A numerical code to model the laser induced medium perturbation (LIMP) arising from the relaxation of the lower laser level has been developed and used to determine the effect of LIMP on the frequency spectrum of the LAWS laser output pulse. The enclosed figures show representative results for a laser operating at 0.5 atm. with a discharge cross-section of 4.5 cm to produce a 20 J pulse with aFWHM of 3.1 microns. The first four plots show the temporal evolution of the laser pulse power, energy evolution, LIMP frequency chirp and electric field magnitude. The electric field magnitude is taken by beating the calculated complex electric field and beating it with a local oscillator signal. The remaining two figures show the power spectrum and energy distribution in the pulse as a function of the varying pulse frequency. The LIMP theory has been compared with experimental data from the NOAA Windvan Lidar and has been found to be in good agreement.

Spiers, Gary D.↗
NASA NTRS1975

The effect of adiabatic focusing upon charged particle propagation in random magnetic fields

Charged particles propagating along the diverging lines of force of a spatially inhomogeneous guiding field were considered as they are scattered by random fields. Their longitudinal transport is described in terms of the eigenfunctions of a Sturm-Liouville operator incorporating the effect of adiabatic focussing along with that of scattering. The relaxation times and characteristic velocities are graphed and tabulated. The particle density is evaluated as a function of space and time for two different regimes. In the first regime (relatively weak focussing), a diffusive mode of propagation is dominant but coherent modes are also dominant. In the second regime (strong focussing), diffusion does not occur and the propagation is purely coherent. This supercoherent mode corresponds exactly to the so-called scatter-free propagation of kilovolt solar flare electrons. On a larger scale, focussed transport provides an interpretation of many observed characteristics of extragalactic radio sources.

Earl, J. A.↗
NASA NTRS2013

Flexible Microstrip Circuits for Superconducting Electronics

Flexible circuits with superconducting wiring atop polyimide thin films are being studied to connect large numbers of wires between stages in cryogenic apparatus with low heat load. The feasibility of a full microstrip process, consisting of two layers of superconducting material separated by a thin dielectric layer on 5 mil (approximately 0.13 mm) Kapton sheets, where manageable residual stress remains in the polyimide film after processing, has been demonstrated. The goal is a 2-mil (approximately 0.051-mm) process using spin-on polyimide to take advantage of the smoother polyimide surface for achieving highquality metal films. Integration of microstrip wiring with this polyimide film may require high-temperature bakes to relax the stress in the polyimide film between metallization steps.

Chervenak, James↗
NASA NTRS2019

Fermi, Wind, and SOHO Observations of Sustained Gamma-Ray Emission from the Sun

We report on the linear relationship between the durations of two types of electromagnetic emissions associated with shocks driven by coronal mass ejections: sustained gamma-ray emission (SGRE) and interplanetary type II radio bursts. The relationship implies that shocks accelerate approximately 10 kiloelectronvolts electrons (for type II bursts) and more than 300 megaelectronvolts protons (for SGRE) roughly over the same duration. The SGRE events are from the Large Area Telescope (LAT) on board the Fermi satellite, while the type II bursts are from the Radio and Plasma Wave Experiment (WAVES) on board the Wind spacecraft. Here we consider five SGRE events that were not included in a previous study of events with longer duration (more than 5 hours). The five events are selected by relaxing the minimum duration to 3 hours. We found that some SGRE events had a tail that seems to last until the end of the associated type II burst. We pay special attention to the 2011 June 2 SGRE event that did not have a large solar energetic particle event at Earth or at the STEREO spacecraft that was well connected to the eruption. We suggest that the preceding CME (Coronal Mass Ejection) acted as a magnetic barrier that mirrored protons back to Sun.

Gopalswamy, N.↗
NASA NTRS1993

Electronic characterization of defects in narrow gap semiconductors

The study of point defects in semiconductors has a long and honorable history. In particular, the detailed understanding of shallow defects in common semiconductors traces back to the classic work of Kohn and Luttinger. However, the study of defects in narrow gap semiconductors represents a much less clear story. Here, both shallow defects (caused by long range potentials) and deep defects (from short range potentials) are far from being completely understood. In this study, all results are calculational and our focus is on the chemical trend of deep levels in narrow gap semiconductors. We study substitutional (including antisite), interstitial and ideal vacancy defects. For substitutional and interstitial impurities, the efects of relaxation are included. For materials like Hg(1-x)Cd(x)Te, we study how the deep levels vary with x, of particular interest is what substitutional and interstitial atoms yield energy levels in the gap i.e. actually produce deep ionized levels. Also, since the main technique utilized is Green's functions, we include some summary of that method.

Patterson, James D.↗
NASA NTRS2003

Non-Thermal Hard X-Ray Emission in Galaxy Clusters Observed with the BeppoSAX PDS

We study the X-ray emission in a Sample of galaxy clusters using the BeppoSAX PDS instrument in the 20 - 80 keV energy band. We estimate the non-thermal hard X-ray cluster emission (HXR) by modeling the thermal contribution from the cluster gas and the non-thermal contamination from the unobscured AGN in the clusters. We also evaluate the systematic uncertainties due to the background fluctuations. Assuming negligible contamination from the obscured AGN, the resulting non-thermal component is detected at a 2 sigma level in approx. 50% of the non-significantly AGN-contaminated clusters: A2142, A2199, A2256, A3376, Coma, Ophiuchus and Virgo. The data are consistent with a scenario whereby relaxed clusters have no hard X-ray component of non-thermal origin, whereas merger clusters do. The co-added spectrum of the above clusters indicates a power-law spectrum for the HXR with a photon index of 2.8+0.3-0.4 in the 12 - 115 keV band, and we find indication that it has extended distribution. These indications argue against significant contamination from obscured AGN, which have harder spectra and centrally concentrated distribution. These results are supportive of the assumption of the merger shock acceleration of electrons in clusters, which has been proposed as a possible origin of the non-thermal hard X-ray emission models. Assuming that the Cosmic Microwave Background photons experience Inverse Compton scattering from the merger-accelerated relativistic electrons, and thus produce the observed HXR, the measured hard X-ray slope corresponds to a differential momentum spectra of the relativistic electrons with a slope of mu = 3.8 - 5.0. In presence of cluster magnetic fields this relativistic electron population produces synchrotron emission with a spectral index of 1.4 - 2.1, consistent with radio halo observations of merger clusters. Thus both hard X-ray and radio observations of merger clusters are consistent with the Inverse Compton model. The observed slope of HXR is also consistent with that predicted by the non-thermal bremsstrahlung, which chus cannot be ruled by the fit to the current data, even though this model requires an extreme, untenable cluster energetics. Assuming centrally concentrated distribution of HXR, the data requires a harder slope for the HXR spectrum, which is consistent with secondary electron models, but this model yields a worse fit to the PDS data and thus seems to be disfavored over the primary electron Inverse Compton model.

Nevalainen, J.↗
NASA NTRS2019

Quantifying the Influence of Redox Conditions on the Seismic Properties of Olivine

A series of eight olivine specimens were fabricated by hot-pressing at 1200 degrees Celsius and 300 megapascals (MPa). Each hot-pressed specimen was then wrapped in Pt, Ni or NiFe foil to vary oxygen fugacity (fO2), and interrogated via forced torsional oscillation. Mechanical testing was conducted at 10 oscillation periods between 1 and 1000 seconds, at a confining pressure of 200 MPa, during a slow staged-cooling from a maximum temperature of 1200 degrees Celsius to room temperature. After mechanical testing, each specimen was axially sectioned and EBSD (Electron BackScatter Diffraction) was used for the determination of the representative grain size, and grain size distribution of each sample. In addition, each longitudinal section was mapped via FTIR (Fourier Transform InfraRed spectroscopy) to determine the spatial distribution and concentrations of chemically bound and molecular water. Amongst these specimens, chemically bound ‘water’ contents were observed to vary between 0 and 1150 atom ppm (parts per million) H/Si, and molecular water concentrations varied between 0 and 245 atom ppm H/Si. Our forced-oscillation results demonstrate that the measured magnitude of anelastic relaxation within the experimental ‘window’ of oscillation periods is unrelated to the water content. Rather, a relationship was observed between the magnitude of anelastic relaxation and the prevailing redox conditions, which is influenced by the choice of metal sleeving used during the mechanical test. Further, regardless of water content or metal sleeving, each specimen exhibits coupled variations in shear modulus and dissipation within the observational window, indicative of ‘high-temperature background’ behavior, that can be described by a Burgers-type model. During initial fitting of the Burgers models, the unrelaxed shear modulus at a reference temperature of 900 degrees Celsius (G (sub UR)) and the temperature derivative of the unrelaxed shear modulus (dG (sub U)/dT), were treated as adjustable parameters. For all Fe-bearing olivine samples (but not a hydrous and oxidized Fe-free sample) we observe deficits of G (sub UR), and increased values of dG (sub U)/dT, relative to the expected elastic (anharmonic) behavior of Fo90 olivine. This behavior is indicative of anelastic relaxation occurring at shorter periods than observable within the ‘window’ of oscillation periods used in the mechanical test. Moving towards a comprehensive seismologically applicable Burgers model, which includes this newly observed effect of redox conditions on anelastic relaxation, we will present our progress in reconciling truly anharmonic and elastic behavior of Fo (sub 90) olivine with our observed forced-oscillation data.

Cline, Christopher, II↗