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At least 289 records · Page 16

Pressure-driven valence increase and metallization in the Kondo insulator Ce 3 Bi 4 Pt 3

We report the results of high-pressure x-ray diffraction, x-ray absorption, and electrical transport measurements of the Kondo insulator (KI) Ce 3 Bi 4 Pt 3 up to 42 GPa, the highest pressure reached in the study of any Ce-based KI. Here, we observe a smooth decrease in volume and movement toward intermediate Ce valence with pressure, both of which point to increased electron correlations. Despite this, temperature-dependent resistance data show the suppression of the interaction-driven ambient pressure insulating ground state. We also discuss potential ramifications of these results for the predicted topological KI state.

36 MATERIALS SCIENCE↗

Fielding and analyzing performance of a prototype high voltage output gas switch for Saturn

Timing spread between the thirty-six Saturn modules affects peak electrical power delivered to the Bremsstrahlung diode and can affect vacuum power flow and impedance behavior of the load. To reduce the module spread, a new megavolt gas-insulated closing switch was developed employing design techniques developed for the Z-machine laser triggered switches while retaining Saturn’s simpler electrical triggering. Two modules were temporarily outfitted with the new switches and used separately into local resistive loads (instead of the usual Saturn electron beam load). A reliable operating point and switch time jitter at that point were the goals of the experiments. The target switch reliability is less than one pre-fire in one thousand switch-shots, and a timing standard deviation of 4 nanoseconds. The switches were able to meet both requirements but the number of tests at the chosen point are limited.

43 PARTICLE ACCELERATORS↗

Grain subdivision and structural modifications by high-energy heavy ions in UO 2 with different initial grain size

Irradiation with 84 MeV Xe ions at peak fluence above 7 × 10 17 ions/cm 2 has been carried out on two UO 2 samples with different initial grain sizes at 300 °C and 500 °C. Characterization of both grain structure and bubble morphology has been performed using transmission electron microscopy, image analysis and precession electron diffraction. The bubble size in the large-grained sample was smaller than that in the standard-grain sample, confirming fission gas precipitation resistance in the former. The ion irradiation in the high electronic energy deposition range has caused formation of a large density of dislocations which resulted in grain polygonization for the sample with standard grain size, which was observed in multiple lamellas extracted next to each other at peak dose. The sample with large grains showed inconsistent behavior. In one case, dislocation pile-up occurred, but no sub-grain formation was observed. An adjacent location showed sub-grain formation, even if to less extent compared to the standard grain-size sample. Furthermore, these findings suggest a limited polygonization resistance in large-grained UO 2 compared to standard-grain UO 2 . Recrystallization of both sample surfaces was present, leaving unclear if this is a surface effect or a consequence of the highest energy deposition rate in this area.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Effects of elevated temperature exposure on the residual stress state and microstructure of PVD Cr coatings on SiC investigated via in situ X-ray diffraction and transmission electron microscopy

Pure Cr coatings are being considered as corrosion-resistant layers for SiC-SiC f composite fuel cladding in light water reactors. The residual stress state and interdiffusion behavior of Cr coatings deposited on SiC substrates using bipolar high-power impulse magnetron sputtering (B-HiPIMS) and direct current impulse magnetron sputtering (DCMS) were studied using in situ X-ray diffraction experiments at 300 °C, 700 °C, and 1200 °C. After elevated temperature exposure, evolution of the coating microstructure and coating/substrate interdiffusion was characterized by transmission electron microscopy. The compressive residual stress of the dense B-HiPIMS coating at room temperature was gradually relieved at 300 °C, while the stress transitioned to a tensile state at 700 °C. Grain growth of the Cr coating and a Cr–SiC interdiffusion layer consisting of newly formed Cr–C and Cr–Si phases were observed in the B-HiPIMS coating after exposure at 700 °C. The phases in the interdiffusion layer were identified to be Cr 7 C 3 , Cr 3 Si, and Cr 5 Si 3 C x experimentally and by thermodynamic predictions. For the DCMS coating, however, changes in residual stress and microstructure at the elevated temperatures were limited by the inherent porosity and inhomogeneous structure of the as-deposited coating. At 1200 °C, both coating types interacted rapidly with the underlying SiC substrate in the early stages of the experiment. The results from this study suggest that the characteristics of the Cr coatings do not significantly change at the reactor operating temperature of 300 °C, while changes in microstructure and stress state are expected in off-normal conditions of 700 °C and 1200 °C. Finally the results from this study suggest the B-HiPIMS coating is best-suited as a protective coating for SiC fuel cladding.

36 MATERIALS SCIENCE↗

SiC Microchannel Heat Sinks for High Heat Flux Dissipation of 1 kW/cm 2

Thermal management has become a major barrier in the development of high-power micro-devices. Microchannel heat sinks (MCHS) are a promising method to dissipate high heat fluxes from high power density devices. Reducing the thermal resistance will reduce the temperature increase of the electronic device, allowing for higher powers to be achieved while maintaining a safe operating temperature. This paper reports on the use of silicon carbide (Sic) microchannels to dissipate high heat fluxes up to 1 kW/cm 2 over a footprint of 0.25 cm 2 . The use of high aspect ratio and decreased hydraulic diameter channels has allowed for very low thermal resistances to be achieved at higher heat duties compared to previous studies. The experiments performed resulted in heater temperatures of less than 60 °C and thermal resistances as low as 0.024 cm 2 . ° $C$/W between the heater surface and fluid inlet temperature. In conclusion, the demonstrated thermal performance of the SiC MCHS is an encouraging means for dissipating heat from high power density microelectronic devices.

42 ENGINEERING↗

Radiation-Hardened GaN-Based Wireless Communications Architectures for Terrestrial Nuclear Reactor Sensing and Instrumentation

Wireless technologies have become increasingly common in applications, ranging from close proximity inductive communication links in medical devices to short-range Bluetooth and WiFi communications and longer-range cellular communications. Nonetheless, these technologies are unsuitable for use in or around nuclear reactors due to the extreme radiation and temperatures inherent in these environments and their associated significant degradative effects on electronics hardware. However, recent work in wide bandgap– based electronics has shown promise for gallium nitride (GaN) as an emerging technology for the realization of practical wireless communications systems for use in harsh environments. This report presents initial progress on the development of wireless communications architectures designed specifically for nuclear reactor application, based on inherently radiation-hardened (rad-hard) GaN technology. Prior work on rad-hard analog communications topologies is reviewed, and several digital modulation and encoding schemes that utilize GaN-based electronics devices are newly proposed for application in reactor environments. Continuous-time and discrete-time system simulations were performed, and results are presented for the preliminary transmitter and receiver designs, respectively. In addition, an overview of a software-defined radio testbed, designed for communications protocol development, is provided. Future work will focus on implementing candidate radiation-resistant wireless architectures using a research AlGaN/GaN high electron mobility transistor (HEMT) integrated circuit process, which is available at the Ohio State University, and irradiation studies will be carried out to assess the true potential of this technology for reactor application.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

Thermal analysis of RHIC arc dipole magnet cold mass with EIC beam screen

The existing RHIC storage rings – including their superconducting magnet arcs – will be used for the hadron storage ring of the Electron-Ion Collider (EIC). The vacuum chamber of these magnets was not designed for the EIC hadron beams, with shorter bunches and of higher average current than the RHIC beams. With the current stainless steel beam pipe, the resistive-wall (RW) heating will exceed the dynamic heat load budget. Limiting the RW heating is important to prevent the superconducting magnets from quenching and to maintain a low screen temperature necessary to impede the rise of RW heating (higher resistance at higher temperature) as well as to achieve desired ultra-high vacuum. In addition, simulations predict the formation of electron cloud which would further contribute to the dynamic heat load and could compromise the quality and stability of the beam. To reduce the resistive-wall heating and suppress electron cloud, a beam screen will be installed in the vacuum chamber of the RHIC SC magnets. The screen will have a high RRR copper layer at its inner face – useful to reduce the resistive-wall impedance thanks to its high conductivity especially at cryogenic temperatures – and will be coated with a thin layer of amorphous carbon, a material with low secondary electron yield to suppress the formation of electron clouds. The baseline solution envisages a screen that will be cooled by thermal contact to the 4.55 K beam pipe. Detailed thermal analysis have been conducted in ANSYS 2020 for an arc dipole cold mass equipped with a beam screen in order to study the feasibility of a passively-cooled screen and guide its design. Temperature-dependent thermal conductivity properties of all materials in the operating (cryogenic) temperature range are considered. Suitable assumptions and simplifications are made to model the magnet coil and calculate its homogenized thermal conductivity. Sensitivity studies with respect to layer thicknesses and area of contact are carried out and results are presented.

43 PARTICLE ACCELERATORS↗

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Abstract Resistive switching (RS) devices with ultra‐low‐voltage threshold and reliable switching repeatability exhibits great potential applications in energy‐efficient data storage and neuromorphic computing. Understanding switching mechanisms at nanoscale is critical to design RS devices with improved performance. In this work, a lamella memristive device using focused ion beam (FIB) method based on the metal/TiO x /TiN/Si structure device is fabricated. In situ transmission electron microscopy (TEM) and current–voltage ( I–V ) characteristic demonstrate that the lamella device shows a volatile RS behavior with a threshold switching at ≈ ± 0.4 V. In situ scanning transmission electron microscopy (STEM) experiments with electron energy loss spectroscopy (EELS) reveal that the charge carriers such as oxygen vacancies migrate under positive/negative DC bias and modulate Schottky barriers at the top and bottom metal/semiconductor interfaces. The RS mechanism of the lamella device is based on the Schottky barriers modulation and Joule heating assisted electric field triggered thermal runaway (FTTR) occurred at the metal/semiconductor interfaces. The fundamental insights gained from this study presents a perspective on interface‐type RS devices processing and opens up new technological opportunities of fabricating ultra‐low‐energy memristive devices.

36 MATERIALS SCIENCE↗

Anomalous nematic state to stripe phase transition driven by in-plane magnetic fields

Anomalous nematic states, recently discovered in ultraclean two-dimensional electron gas, emerge from quantum Hall stripe phases upon further cooling. These states are hallmarked by a local minimum (maximum) in the hard (easy) longitudinal resistance and by an incipient plateau in the Hall resistance in nearly half-filled Landau levels. In this work, we demonstrate that a modest in-plane magnetic field, applied either along $\langle$110$\rangle$ or $\langle1\bar{1}0\rangle$ crystal axis of GaAs, destroys anomalous nematic states and restores quantum Hall stripe phases aligned along their native $\langle$110$\rangle$ direction. These findings confirm that anomalous nematic states are distinct from other ground states and will assist future theories to identify their origin.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Antiferromagnetic excitonic insulator state in Sr3Ir2O7

Abstract Excitonic insulators are usually considered to form via the condensation of a soft charge mode of bound electron-hole pairs. This, however, presumes that the soft exciton is of spin-singlet character. Early theoretical considerations have also predicted a very distinct scenario, in which the condensation of magnetic excitons results in an antiferromagnetic excitonic insulator state. Here we report resonant inelastic x-ray scattering (RIXS) measurements of Sr 3 Ir 2 O 7 . By isolating the longitudinal component of the spectra, we identify a magnetic mode that is well-defined at the magnetic and structural Brillouin zone centers, but which merges with the electronic continuum in between these high symmetry points and which decays upon heating concurrent with a decrease in the material’s resistivity. We show that a bilayer Hubbard model, in which electron-hole pairs are bound by exchange interactions, consistently explains all the electronic and magnetic properties of Sr 3 Ir 2 O 7 indicating that this material is a realization of the long-predicted antiferromagnetic excitonic insulator phase.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Systems and methods for resolving a number of incident RF-range photons

A photon-number-resolving detector comprises a detection element, an ohmmeter, and a hardware logic component. The detection element can be formed from a Weyl or Dirac semimetal. Electrons of the detection element are characterized by a surface state that exhibits a Dirac cone and a bulk superconducting state that exhibits a bandgap. When photons having energies less than the bandgap of the bulk superconducting state impinges on the detection element, the photons can be absorbed by electrons of the detection element that are characterized by the surface state. The ohmmeter outputs resistance data indicative of an electrical resistance of the detection element while the photons impinge on the detection element. The hardware logic component can determine, based upon the resistance data, a number of the photons that are absorbed by the surface state electrons of the detection element.

Soh, Daniel Beom Soo↗

Low Temperature Dynamic Polaron Liquid in a Manganite Exhibiting Colossal Magnetoresistance

Polarons - fermionic charge carriers bearing a strong companion lattice deformation - exhibit a natural tendency for self-localization due to the recursive interaction between electrons and the lattice. While polarons are ubiquitous in insulators, how they evolve in transitions to metallic and superconducting states in quantum materials remains an open question. Here, we use resonant inelastic x-ray scattering to track the electron-lattice coupling in the colossal magneto-resistive bi-layer manganite La 1.2 Sr 1.8 Mn 2 O 7 across its metal-to-insulator transition. The response in the insulating high-temperature state features harmonic emissions of a dispersionless oxygen phonon at small energy transfer. Additionally, upon cooling into the metallic state, we observe a drastic redistribution of spectral weight from the region of these harmonic emissions to a broad high energy continuum. In concert with theoretical calculations, we show that this evolution implies a shift in electron-lattice coupling from static to dynamic lattice distortions that leads to a distinct polaronic ground state in the low temperature metallic phase - a dynamic polaron liquid.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The antibiotic sorangicin A inhibits promoter DNA unwinding in a Mycobacterium tuberculosis rifampicin-resistant RNA polymerase

Rifampicin (Rif) is a first-line therapeutic used to treat the infectious disease tuberculosis (TB), which is caused by the pathogen Mycobacterium tuberculosis (Mtb). The emergence of Rif-resistant (Rif R ) Mtb presents a need for new antibiotics. Rif targets the enzyme RNA polymerase (RNAP). Sorangicin A (Sor) is an unrelated inhibitor that binds in the Rif-binding pocket of RNAP. Sor inhibits a subset of Rif R RNAPs, including the most prevalent clinical Rif R RNAP substitution found in Mtb infected patients (S456>L of the β subunit). In this paper, we present structural and biochemical data demonstrating that Sor inhibits the wild-type Mtb RNAP by a similar mechanism as Rif: by preventing the translocation of very short RNAs. By contrast, Sor inhibits the RifR S456L enzyme at an earlier step, preventing the transition of a partially unwound promoter DNA intermediate to the fully opened DNA and blocking the template-strand DNA from reaching the active site in the RNAP catalytic center. By defining template-strand blocking as a mechanism for inhibition, we provide a mechanistic drug target in RNAP. Our finding that Sor inhibits the wild-type and mutant RNAPs through different mechanisms prompts future considerations for designing antibiotics against resistant targets. Also, we show that Sor has a better pharmacokinetic profile than Rif, making it a suitable starting molecule to design drugs to be used for the treatment of TB patients with comorbidities who require multiple medications.

59 BASIC BIOLOGICAL SCIENCES↗

Driving rotamak currents with minimal power dissipation

The Rotamak is a proposed thermonuclear fusion device which employs rotating magnetic fields (RMF) to generate an azimuthal current to produce a field-reversed configuration. The efficiency of the currents that produce the field reversal by RMFs was debated some 40 years ago. The debate revolved around whether the currents would incur dissipation by the conventional Spitzer perpendicular resistivity, or whether some other relation between current and dissipation would be more appropriate. By employing an electron–ion pitch-angle scattering model, we find that the dissipation is non-Spitzer in nature. However, curiously, there appears to exist a regime where the power dissipated to maintain the current becomes vanishingly small.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Interplay of negative electronic compressibility and capacitance enhancement in lightly-doped metal oxide Bi 0.95 La 0.05 FeO 3 by quantum capacitance model

Light-sensitive capacitance variation of Bi 0.95 La 0.05 FeO 3 (BLFO) ceramics has been studied under violet to UV irradiation. The reversible capacitance enhancement up to 21% under 405 nm violet laser irradiation has been observed, suggesting a possible degree of freedom to dynamically control this in high dielectric materials for light-sensitive capacitance applications. By using ultraviolet photoemission spectroscopy (UPS), we show here that exposure of BLFO surfaces to UV light induces a counterintuitive shift of the O 2p valence state to lower binding energy of up to 243 meV which is a direct signature of negative electronic compressibility (NEC). A decrease of BLFO electrical resistance agrees strongly with the UPS data suggesting the creation of a thin conductive layer on its insulating bulk under light irradiation. By exploiting the quantum capacitance model, we find that the negative quantum capacitance due to this NEC effect plays an important role in this capacitance enhancement.

36 MATERIALS SCIENCE↗

Structural modulation, physical properties, and electronic band structure of the kagome metal UCr 6 ⁢Ge 6

The chemical flexibility of the 𝑅⁢𝑀 6 ⁢𝑋 6 stoichiometry, where an 𝑓-block element is intercalated in the CoSn structure type, allows for the tuning of flatbands associated with kagome lattices to the Fermi level and for emergent phenomena due to interactions between the 𝑓- and 𝑑-electron lattices. Yet, 5⁢𝑓 members of the “166” compounds are underrepresented compared with 4⁢𝑓 members. In this work, we report single-crystal growth of UCr 6 ⁢Ge 6 , which crystallizes in a monoclinically distorted Y 0.5⁢ Co 3 ⁢Ge 3 -type structure. The real-space character of the modulation, which is unique within the 𝑅⁢𝑀 6 ⁢𝑋 6 family, is approximated by a 3×1×2 supercell of the average monoclinic cell. The compound has kagome-lattice flatbands near the Fermi level and a moderately enhanced electronic heat capacity, as evidenced by its low-temperature Sommerfeld coefficient (𝛾=86.5 mJ mol −1 K −2 ) paired with band structure calculations. The small, isotropic magnetization and featureless resistivity of UCr 6 ⁢Ge 6 suggest itinerant uranium 5⁢𝑓 electrons and Pauli paramagnetism. Angle-resolved photoemission spectroscopy results provide evidence for uranium 5⁢𝑓 weight at the Fermi level and for a flatband near the Fermi level associated with the chromium 3⁢𝑑 kagome lattice. The isotropic magnetic behavior of the uranium 5⁢𝑓 electrons starkly contrasts with localized behavior in other uranium 166 compounds, highlighting the high tunability of the magnetic ground state across the material family.

36 MATERIALS SCIENCE↗

Comparison of Thermal Management Approaches for Integrated Traction Drives in Electric Vehicles

The continuous push to increase power densities of electric vehicle (EV) traction drive systems necessitates combining electric motor and power electronics into one unit. A single, compact traction drive unit with fewer interconnecting components also facilitates fast, automated assembly of electric vehicles, driving production costs down and enabling wider adoption of EVs. There are a number of challenges associated with the integration of power electronics with the electric machine, including thermal management of the combined traction drive system. However, one important benefit of integration from the thermal management system perspective is the potential for using a single fluid loop instead of two separate cooling systems for the electric machine and the power electronics/inverter. This paper reviews several integration approaches and, employing finite element analysis (FEA), compares thermal management solutions for the combined electric machine and power electronics systems. Namely, three different scenarios are modeled: (1) independent component (motor and power electronics) cooling, which is compared to the combined cooling system approach for (2) radially and (3) axially integrated power electronics modules into the motor enclosure. Temperature distributions for selected thermal loads and thermal resistances from the key heat-generating components to the cooling fluid are compared for each scenario.

47 OTHER INSTRUMENTATION↗

Mapping Conductance and Switching Behavior of Graphene Devices In Situ

Graphene is proposed for use in various nanodevice designs, many of which harness emergent quantum properties for device functionality. However, visualization, measurement, and manipulation become nontrivial at nanometer and atomic scales, representing a significant challenge for device fabrication, characterization, and optimization at length scales where quantum effects emerge. Herein, proof of principle results at the crossroads between 2D nanoelectronic devices, e-beam-induced modulation, and imaging with secondary electron e-beam induced currents (SEEBIC) is presented. A device platform compatible with scanning transmission electron microscopy investigations is introduced. Then how the SEEBIC imaging technique can be used to visualize conductance and connectivity in single layer graphene nanodevices, even while supported on a thicker substrate (conditions under which conventional imaging fails) is shown. Finally, it is shown that the SEEBIC imaging technique can detect subtle differences in charge transport through time in nonohmic graphene nanoconstrictions indicating the potential to reveal dynamic electronic processes.

36 MATERIALS SCIENCE↗