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At least 289 records · Page 16

Focal plane infrared readout circuit

An infrared imager, such as a spectrometer, includes multiple infrared photodetectors and readout circuits for reading out signals from the photodetectors. Each readout circuit includes a buffered direct injection input circuit including a differential amplifier with active feedback provided through an injection transistor. The differential amplifier includes a pair of input transistors, a pair of cascode transistors and a current mirror load. Photocurrent from a photodetector can be injected onto an integration capacitor in the readout circuit with high injection efficiency at high speed. A high speed, low noise, wide dynamic range linear infrared multiplexer array for reading out infrared detectors with large capacitances can be achieved even when short exposure times are used. The effect of image lag can be reduced.

Pain, Bedabrata↗

Focal plane infrared readout circuit with automatic background suppression

A circuit for reading out a signal from an infrared detector includes a current-mode background-signal subtracting circuit having a current memory which can be enabled to sample and store a dark level signal from the infrared detector during a calibration phase. The signal stored by the current memory is subtracted from a signal received from the infrared detector during an imaging phase. The circuit also includes a buffered direct injection input circuit and a differential voltage readout section. By performing most of the background signal estimation and subtraction in a current mode, a low gain can be provided by the buffered direct injection input circuit to keep the gain of the background signal relatively small, while a higher gain is provided by the differential voltage readout circuit. An array of such readout circuits can be used in an imager having an array of infrared detectors. The readout circuits can provide a high effective handling capacity.

Pain, Bedabrata↗

Method of fabricating multiwavelength infrared focal plane array detector

A multiwavelength local plane array infrared detector is included on a common substrate having formed on its top face a plurality of In.sub.x Ga.sub.1-x As (x.ltoreq.0.53) absorption layers, between each pair of which a plurality of InAs.sub.y P.sub.1-y (y.ltoreq.1) buffer layers are formed having substantially increasing lattice parameters, respectively, relative to said substrate, for preventing lattice mismatch dislocations from propagating through successive ones of the absorption layers of decreasing bandgap relative to said substrate, whereby a plurality of detectors for detecting different wavelengths of light for a given pixel are provided by removing material above given areas of successive ones of the absorption layers, which areas are doped to form a pn junction with the surrounding unexposed portions of associated absorption layers, respectively, with metal contacts being formed on a portion of each of the exposed areas, and on the bottom of the substrate for facilitating electrical connections thereto.

Forrest, Stephen R.↗

Real-time, continuous-wave terahertz imaging using a microbolometer focal-plane array

The present invention generally provides a terahertz (THz) imaging system that includes a source for generating radiation (e.g., a quantum cascade laser) having one or more frequencies in a range of about 0.1 THz to about 10 THz, and a two-dimensional detector array comprising a plurality of radiation detecting elements that are capable of detecting radiation in that frequency range. An optical system directs radiation from the source to an object to be imaged. The detector array detects at least a portion of the radiation transmitted through the object (or reflected by the object) so as to form a THz image of that object.

Hu, Qing↗

Flagging and Correction of Pattern Noise in the Kepler Focal Plane Array

In order for Kepler to achieve its required less than 20 PPM photometric precision for magnitude 12 and brighter stars, instrument-induced variations in the CCD readout bias pattern (our "2D black image"), which are either fixed or slowly varying in time, must be identified and the corresponding pixels either corrected or removed from further data processing. The two principle sources of these readout bias variations are crosstalk between the 84 science CCDs and the 4 fine guidance sensor (FGS) CCDs and a high frequency amplifier oscillation on less than 40% of the CCD readout channels. The crosstalk produces a synchronous pattern in the 2D black image with time-variation observed in less than 10% of individual pixel bias histories. We will describe a method of removing the crosstalk signal using continuously-collected data from masked and over-clocked image regions (our "collateral data"), and occasionally-collected full-frame images and reverse-clocked readout signals. We use this same set to detect regions affected by the oscillating amplifiers. The oscillations manifest as time-varying moir pattern and rolling bands in the affected channels. Because this effect reduces the performance in only a small fraction of the array at any given time, we have developed an approach for flagging suspect data. The flags will provide the necessary means to resolve any potential ambiguity between instrument-induced variations and real photometric variations in a target time series. We will also evaluate the effectiveness of these techniques using flight data from background and selected target pixels.

Kolodziejczak, Jeffery J.↗

Fabrication of a Cryogenic Bias Filter for Ultrasensitive Focal Plane

A fabrication process has been developed for cryogenic in-line filtering for the bias and readout of ultrasensitive cryogenic bolometers for millimeter and submillimeter wavelengths. The design is a microstripline filter that cuts out, or strongly attenuates, frequencies (10 50 GHz) that can be carried by wiring staged at cryogenic temperatures. The filter must have 100-percent transmission at DC and low frequencies where the bias and readout lines will carry signal. The fabrication requires the encapsulation of superconducting wiring in a dielectric-metal envelope with precise electrical characteristics. Sufficiently thick insulation layers with high-conductivity metal layers fully surrounding a patterned superconducting wire in arrayable formats have been demonstrated. A degenerately doped silicon wafer has been chosen to provide a metallic ground plane. A metallic seed layer is patterned to enable attachment to the ground plane. Thick silicon dioxide films are deposited at low temperatures to provide tunable dielectric isolation without degrading the metallic seed layer. Superconducting wiring is deposited and patterned using microstripline filtering techniques to cut out the relevant frequencies. A low Tc superconductor is used so that it will attenuate power strongly above the gap frequency. Thick dielectric is deposited on top of the circuit, and then vias are patterned through both dielectric layers. A thick conductive film is deposited conformally over the entire circuit, except for the contact pads for the signal and bias attachments to complete the encapsulating ground plane. Filters are high-aspect- ratio rectangles, allowing close packing in one direction, while enabling the chip to feed through the wall of a copper enclosure. The chip is secured in the copper wall using a soft metal seal to make good thermal and electrical contact to the outer shield.

Chervenak, James↗

Fabrication of a Cryogenic Terahertz Emitter for Bolometer Focal Plane Calibrations

A fabrication process is reported for prototype emitters of THz radiation, which operate cryogenically, and should provide a fast, stable blackbody source suitable for characterization of THz devices. The fabrication has been demonstrated and, at the time of this reporting, testing was underway. The emitter is similar to a monolithic silicon bolometer in design, using both a low-noise thermometer and a heater element on a thermally isolated stage. An impedance-matched, high-emissivity coat ing is also integrated to tune the blackbody properties. This emitter is designed to emit a precise amount of power as a blackbody spectrum centered on terahertz frequencies. The emission is a function of the blackbody temperature. An integrated resistive heater and thermometer system can control the temperature of the blackbody with greater precision than previous incarnations of calibration sources that relied on blackbody emission. The emitter is fabricated using a silicon- on-insulator substrate wafer. The buried oxide is chosen to be less than 1 micron thick, and the silicon device thickness is 1-2 microns. Layers of phosphorus compensated with boron are implanted into and diffused throughout the full thickness of the silicon device layer to create the thermometer and heater components. Degenerately doped wiring is implanted to connect the devices to wire-bondable contact pads at the edge of the emitter chip. Then the device is micromachined to remove the thick-handle silicon behind the thermometer and heater components, and to thermally isolate it on a silicon membrane. An impedance- matched emissive coating (ion assisted evaporated Bi) is applied to the back of the membrane to enable high-efficiency emission of the blackbody spectrum.

Chervenak, James↗

Enabling Large Focal Plane Arrays through Mosaic Hybridization

We have demonstrated the hybridization of large mosaics of far-infrared detectors, joining separately fabricated sub-units into a single unit on a single, large substrate. We produced a single detector mockup on a 100mm diameter wafer and four mockup readout quadrant chips from a separate 100mm wafer. The individually fabricated parts were hybridized using a Suss FC150 flip chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion (CTE) match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the mockup mosaic-hybridized detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently demonstrated.

Miller, Timothy M.↗

Focal Plane Alignment Utilizing Optical CMM

In many applications, an optical detector has to be located relative to mechanical reference points. One solution is to specify stringent requirements on (1) mounting the optical detector relative to the chip carrier, (2) soldering the chip carrier onto the printed circuit board (PCB), and (3) installing the PCB to the mechanical structure of the subsystem. Figure 1 shows a sketch of an optical detector mounted relative to mechanical reference with high positional accuracy. The optical detector is typically a fragile wafer that cannot be physically touched by any measurement tool. An optical coordinate measuring machine (CMM) can be used to position optical detectors relative to mechanical reference points. This approach will eliminate all requirements on positional tolerances. The only requirement is that the PCB is manufactured with oversized holes. An exaggerated sketch of this situation is shown in Figure 2. The sketch shows very loose tolerances on mounting the optical detector in the chip carrier, loose tolerance on soldering the chip carrier to the PCB, and finally large tolerance on where the mounting screws are located. The PCB is held with large screws and oversized holes. The PCB is mounted loosely so it can move freely around. The optical CMM measures the mechanical reference points. Based on these measurements, the required positions of the optical detector corners can be calculated. The optical CMM is commanded to go to the position where one detector corner is supposed to be. This is indicated with the cross-hairs in Figure 2(a). This figure is representative of the image of the optical CMM monitor. Using a suitable tapping tool, the PCB is manually tapped around until the corner of the optical detector is at the crosshairs of the optical CMM. The CMM is commanded to another corner, and the process is repeated a number of times until all corners of the optical detector are within a distance of 10 to 30 microns of the required position. The situation is sketched in Figure 2(b) (the figure also shows the tapping tool and where to tap). At this point the fasteners for the PCB are torqued slightly so the PCB can still move. The PCB location is adjusted again with the tapping tool. This process is repeated 3 to 4 times until the final torque is achieved. The oversized mounting holes are then filled with a liquid bonding agent to secure the board in position (not shown in the sketch). A 10- to 30-micron mounting accuracy has been achieved utilizing this method..

Liebe, Carl Christian↗

Enabling Large Focal Plane Arrays Through Mosaic Hybridization

We have demonstrated advances in mosaic hybridization that will enable very large format far-infrared detectors. Specifically we have produced electrical detector models via mosaic hybridization yielding superconducting circuit paths by hybridizing separately fabricated sub-units onto a single detector unit. The detector model was made on a 100mm diameter wafer while four model readout quadrant chips were made from a separate 100mm wafer. The individually fabricated parts were hybridized using a flip-chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the model mosaic-hybrid detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently available.

Miller, TImothy M.↗

Spectral Analysis of the Primary Flight Focal Plane Arrays for the Thermal Infrared Sensor

Thermal Infrared Sensor (TIRS) is a (1) New longwave infrared (10 - 12 micron) sensor for the Landsat Data Continuity Mission, (2) 185 km ground swath; 100 meter pixel size on ground, (3) Pushbroom sensor configuration. Issue of Calibration are: (1) Single detector -- only one calibration, (2) Multiple detectors - unique calibration for each detector -- leads to pixel-to-pixel artifacts. Objectives are: (1) Predict extent of residual striping when viewing a uniform blackbody target through various atmospheres, (2) Determine how different spectral shapes affect the derived surface temperature in a realistic synthetic scene.

Montanaro, Matthew↗

Enabling Large Focal Plane Arrays Through Mosaic Hybridization

We have demonstrated advances in mosaic hybridization that will enable very large format far-infrared detectors. Specifically we have produced electrical detector models via mosaic hybridization yielding superconducting circuit paths by hybridizing separately fabricated sub-units onto a single detector unit. The detector model was made on a 100mm diameter wafer while four model readout quadrant chips were made from a separate 100mm wafer. The individually fabricated parts were hybridized using a flip-chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the model mosaic-hybrid detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently available.

Miller, Timothy M.↗

Enabling Large Focal Plane Arrays Through Mosaic Hybridization

We have demonstrated advances in mosaic hybridization that will enable very large format far-infrared detectors. Specifically we have produced electrical detector models via mosaic hybridization yielding superconducting circuit patbs by hybridizing separately fabricated sub-units onto a single detector unit. The detector model was made on a 100mm diameter wafer while four model readout quadrant chips were made from a separate 100mm wafer. The individually fabric.ted parts were hybridized using a Suss FCI50 flip chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the model mosaic-hybrid detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently available.

Miller, Timothy M.↗

Mixed Linear/Square-Root Encoded Single Slope Ramp Provides a Fast, Low Noise Analog to Digital Converter with Very High Linearity for Focal Plane Arrays

An analog-to-digital converter (ADC) converts pixel voltages from a CMOS image into a digital output. A voltage ramp generator generates a voltage ramp that has a linear first portion and a non-linear second portion. A digital output generator generates a digital output based on the voltage ramp, the pixel voltages, and comparator output from an array of comparators that compare the voltage ramp to the pixel voltages. A return lookup table linearizes the digital output values.

Wrigley, Christopher James↗