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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Remote Epitaxy of III-V Solar Cells via Hydride Vapor Phase Epitaxy

The promise of remote epitaxy, in which epitaxial registry of a film can still be maintained through two-dimensional layers, has emerged from an advanced understanding of the interactions between two dimensional materials and bulk semiconductors. A promising application of this technology is to facilitate substrate reuse in epitaxial III-V systems, which could significantly reduce material cost and improve commercial viability of this high-efficiency photovoltaic technology. In this process the weak van der Waal bonds between the 2D layer and the III-V substrate make separation of epitaxially-grown layers simple and leaves a smooth substrate that can be reused for cost reduction. Here we present a study of growth parameters of GaAs on AlGaAs through a low dimensional carbon interlayer via hydride vapor phase epitaxy (HVPE). We Investigate the effect of various GaAs nucleation conditions such as V/III ratio, temperature and growth rate on film roughness, crystallinity, and degree of epitaxial alignment. We demonstrate growth of single crystal GaAs layer on top of the low dimensional carbon that follow the crystal orientation of the substrate. Surface roughness measured via AFM found that lower V/III ratios result in smoother III-V films grown on the low dimensional carbon, with a lowest RMS of ~60 nm obtained at a V/III ratio of 5. Growth temperatures are optimized at 650 C, as temperatures below 550 C show non-crystalline growth and higher temperature samples display very rough surfaces. Additionally, we investigate HVPE growth on various forms of low-dimensional carbon including transferred graphene, CVD-grown graphene, and MOCVD-growth amorphous carbon and find the latter to be most well suited for III-V growth as this method results in cleaner interface and potential for direct, large-area coverage. We also identify techniques to mitigate surface degradation in carbon layers as a function of both exposure time and growth environment by analyzing surface changes via x-ray reflectivity. We show growth of heteroepitaxial III-V solar cells on carbon interlayers and preliminary cell results, which are currently limited to 4% efficiency under one sun.

AlGaAs↗
NASA NTRS1984

Control of Thermal Stress in Dendritic Web Growth

The temperature distributions which are present during the growth of ribbon crystals generate stresses which can adversely affect the growth or perfection of the material. Several different effects occur which depend on the magnitude and distribution of these stresses. In most cases, the observed phenomena are the result of complex interactions of a number of mechanisms. In many instances, however, one mechanism predominates to such an extent that a simplified distinction between the various effects can be made. Definitions based on observed behavior in dendritic web growth are outlined.

Seidensticker, R. G.↗
DOE OSTI2021

Scaling of silicon nanoparticle growth in low temperature flowing plasmas

Low temperature plasmas are an emerging method to synthesize high quality nanoparticles (NPs). An established and successful technique to produce NPs is using a capacitively coupled plasma (CCP) in cylindrical geometry. Although a robust synthesis technique, optimizing or specifying NP properties using CCPs, is challenging. In this paper, results from a computational investigation for the growth of silicon NPs in flowing inductively coupled plasmas (ICPs) using Ar/SiH 4 gas mixtures of up to a few Torr are discussed. ICPs produce more locally constrained and quiescent plasma potentials. These positive plasma potentials produce an electrostatic trap for negatively charged NPs, which can significantly extend the residence time of NPs in the plasma, which in turn provides a controllable period for particle growth. The computational platforms used in this study consist of a two-dimensional plasma hydrodynamics model, a three-dimensional nanoparticle growth and trajectory tracking model, and a molecular dynamics simulation for deriving reactive sticking coefficients of silane radicals on Si NPs. Trends for the nanoparticle growth as a function of SiH 4 inlet fraction, gas residence time, energy deposition per particle, pressure, and reactor diameter are discussed. The general path for particle synthesis is the trapping of small NPs in the positive electrostatic potential, followed by entrainment in the gas flow upon reaching a critical particle size. Optimizing or controlling NP synthesis then depends on the spatial distribution of plasma potential, the density of growth species, and the relative time that particles spend in the electrostatic trap and flowing through higher densities of growth species upon leaving the trap.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2019

NtGCM User's Manual: 1.1 (High Pressure High Temperature Laser based) Nanotube Growth Chamber Monitor

This manual describes the installation and use of NtGCM software. NtGCM is software designed for monitoring the growth of nanotubes in a high temperature and high pressure chamber using a laser*. NtGCM software monitors a dozen dierent parameters that are important to understanding the growth of the nanomaterials including the laser input power, the temperature at eight separate locations inside and outside the growth chamber, as well as the pressure and ow rate of the gaseous media that control the environment in the chamber. The measurements are all made in real time. The program features a robust user account management layer and a rich data display manager that allows plotted data, displayed units and other parameters to be changed on the y for the operator's convenience.

Sauti, Godfrey↗
DOE OSTI2023

Phase-field modeling of alloy oxidation at high temperatures

Oxide growth is a complex process involving transport of reactive species, heterogeneous reactions, and microstructure evolution. Predicting oxidation kinetics and especially the oxide morphological change has been a long-standing challenge. Here we develop a phase-field model for predicting the oxide growth kinetics of a multicomponent alloy during high temperature oxidation, focusing on internal oxidation (non-protective) and its transition to external oxidation (protective). In this work, the predicted kinetics and oxide morphology are analyzed and compared to the classical Wagner’s theory and an existing analytical model by Zhao and Gleeson. Some assumptions used in the analytical models and the limitation are discussed. In addition, it is demonstrated that the morphology and distribution of the initial oxide nuclei play an important role in the later stage oxide connectivity and thus the transition to external oxidation.

36 MATERIALS SCIENCE↗
NASA NTRS1994

Elevated Temperature Slow Crack Growth of Silicon Nitride Under Dynamic, Static and Cyclic Flexural Loading

The slow crack growth parameters of a hot-pressed silicon nitride were determined at 1200 and 1300 C in air by statically, dynamically and cyclicly loading bend specimens. The fatigue parameters were estimated using the recently developed CARES/Life computer code. Good agreement exists between the flexural results. However, fatigue susceptibility under static uniaxial tensile loading, reported elsewhere, was greater than in flexure. Cyclic flexural loading resulted in the lowest apparent flexural fatigue susceptibility.

Choi, Sung R.↗
NASA NTRS1995

High Temperature Slow Crack Growth of Si3N4 Specimens Subjected to Uniaxial and Biaxial Dynamic Fatigue Loading Conditions

The slow crack growth of a hot-pressed silicon nitride was determined at 1300 C in air using dynamic fatigue testing under both uniaxial and biaxial stress states. Good agreement in fatigue parameter exists between the data obtained from uniaxial and biaxial loading conditions. A reasonable prediction of dynamic fatigue from one stress state to another was made using the recently developed CARES/LIFE computer code.

Choi, Sung R.↗
NASA NTRS1972

The influence of temperature on fatigue crack growth in a mill annealed Ti-6Al-4V alloy.

To study the influence of temperature on the rate of fatigue crack growth in high strength metal alloys, constant load amplitude fatigue crack growth experiments were carried out using a .25-in.-thick mill annealed Ti-6Al-4V alloy plate. The rates of fatigue crack growth were determined as a function of temperature, ranging from room temperature to about 290 C, and as a function of the crack tip stress intensity factor in a dehumidified high purity argon environment. Limited correlative experiments were carried out in distilled water, dehumidified oxygen and hydrogen, and in vacuum. The results indicate that the rate of fatigue crack growth is essentially independent of test temperature in this alloy, and is affected by residual moisture in very small concentrations. Companion fractographic examinations suggest that the mechanims for fatigue crack growth in the various environments are essentially the same.

Wei, R. P.↗
NASA NTRS1990

Study of temperature-dependent ultrathin oxide growth on Si(111) using variable-angle spectroscopic ellipsometry

The monolayer-sensitive variable-angle spectroscopic ellipsometry technique was used to study the temperature-dependent growth mechanisms of an ultrathin oxide layer on top of silicon. The oxidation was done in atomic oxygen produced in a pure oxygen plasma and driven by an RF power source. The results have been compared with the recently proposed model of Murali and Murarka for ultrathin oxide growth on top of silicon. The activation energies of different growth parameters associated with the oxide growth have also been determined.

De, Bhola N.↗
NASA NTRS1999

Effect of Growth Rate on Elevated Temperature Plastic Flow and Room Temperature Fracture Toughness of Directionally Solidified NiAl-31Cr-3Mo

The eutectic system Ni-33Al-31Cr-3Mo was directionally solidified at rates ranging from 7.6 to 508 mm/h. Samples were examined for microstructure and alloy chemistry, compression tested at 1200 and 1300 K, and subjected to room temperature fracture toughness measurements. Lamellar eutectic grains were formed at 12.7 mm/h; however cellular structures with a radial eutectic pattern developed at faster growth rates. Elevated temperature compression testing between 10(exp -4) to 10(exp -7)/s did not reveal an optimum growth condition, nor did any single growth condition result in a significant fracture toughness advantage. The mechanical behavior, taken together, suggests that Ni-33Al-31Cr-3Mo grown at rates from 25.4 to 254 mm/h will have nominally equivalent properties.

Whittenberger, J. Daniel↗
NASA NTRS1999

Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone and Microgravity

A silicon crystal growth experiment has been accomplished using the floating-zone technique under microgravity on a sounding rocket (TEXUS 36). Measurements of temperature fluctuations in the silicon melt zone due to time dependent thermocapillary convection (Marangoni convection) and an observation of the microscopic growth rate were simultaneously performed during the experiment. Temperature fluctuations of about 0.5 - 0.7 C with a frequency range < 0.5Hz were detectable. The microscopic growth rate fluctuates considerably around the average growth rate of 1 mm/min: Growth rates up to 3 to 4mm/min, close to zero mm/min, as well as negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. They were characterized by Spreading Resistance measurements and Differential Interference Contrast microscopy. The frequencies of temperature fluctuations, microscopic growth rates, and the dopant inhomogeneities correspond quite well, with main frequencies between 0.1 and 0.3 Hz. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, and the characteristic temperature amplitudes and frequencies. At a position 3.4mm above the interface and 1.4mm inside the melt, equivalent to the sensor tip position in the experiment, temperature fluctuations up to 1.8 C and frequencies ? 0.25Hz were found in the simulations.

Schweizer, Markus↗
NASA NTRS1999

Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone on TEXUS36

Several earlier (micro)g experiments have shown that time-dependent thermocapillary (Marangoni) convection is the major cause for the formation of dopant striations in floating-zone grown semiconductor crystals, at least in small-scale systems not employing RF heating. To quantify this correlation, a silicon floating-zone experiment was performed on the TEXUS36 flight (February 7, 1 998) in the monoellipsoid mirror furnace TEM02-ELLI. During the experiment, temperature fluctuations in the silicon melt zone and the microscopic growth rate were simultaneously measured. Temperature fluctuations of 0.5 C - 0.7 C with main frequencies between 0.1 Hz and 0.3 Hz were detectable. The microscopic growth rate fluctuated considerably around the average growth rate of 1 mm/min: rates from 4mm/min to negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. The frequencies associated with the dopant inhomogeneities correspond quite well with those of the temperature fluctuations and microscopic growth rates. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, to evaluate characteristic temperature amplitudes and frequencies, and to give insight into the instability mechanisms of Maran-goni convection in this configuration. The simulations were in good agreement with the experimental values, showing temperature fluctuations with frequencies f? 0.25 Hz and amplitudes up to 1.8 C at a position equivalent to that of the sensor tip in the experiment.

Croell, Arne↗
NASA NTRS1999

Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone on TEXUS36

Several pg experiments on sounding rockets and the Space Shuttle have shown that time-dependent thermocapillary (Marangoni) convection is the major cause for the formation of dopant striations in floating-zone grown semiconductor crystals, at least in small-scale systems not employing RF heating. To quantify this correlation, a silicon floating-zone experiment was performed during the TEXUS36 flight (February 7, 1 998) in the monoellipsoid mirror furnace TEM02-ELLI. During the experiment, temperature fluctuations in the silicon melt zone and the microscopic growth rate were simultaneously measured. Temperature fluctuations of 0.5 C - 0.7 C with main frequencies between 0.1 Hz and 0.3Hz were detectable. The microscopic growth rate fluctuated considerably around the average growth rate of 1 mm/min: rates from 4mm/min to negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. They were characterized by Spreading Resistance measurements and Differential Interference Contrast microscopy. The frequencies associated with the dopant inhomogeneities correspond quite well with those of the temperature fluctuations and microscopic growth rates. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, to evaluate characteristic temperature amplitudes and frequencies, and to give insight into the instability mechanisms of Marangoni convection in this configuration. The simulations were in good agreement with the experimental values, showing temperature fluctuations with frequencies? 0.25 Hz and amplitudes up to 1.8 C at a position equivalent to that of the sensor tip in the experiment.

Croell, Arne↗
NASA NTRS1999

Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone Under Microgravity

USA Several microgravity experiments on sounding rockets and the Space Shuttle have shown that time-dependent thermocapillary (Marangoni) convection is the major cause for the formation of dopant striations in floating-zone grown semiconductor crystals, at least in small-scale systems not employing RF heating. To quantify this correlation, a silicon floating-zone experiment was performed during the TEXUS36 flight (February 7, 1998) in the monoellipsoid mirror furnace TEM02-ELLI. During the experiment, temperature fluctuations in the silicon melt zone and the microscopic growth rate were simultaneously measured. Temperature fluctuations of 0.5 C - 0.7 C with main frequencies between 0.1 Hz and 0.3 Hz were detectable. The microscopic growth rate fluctuated considerably around the average growth rate of 1 mm/min: rates from 4 mm/min to negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. They were characterized by Spreading Resistance measurements and Differential Interference Contrast microscopy. The frequencies associated with the dopant inhomogeneities correspond quite well with those of the temperature fluctuations and microscopic growth rates. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, to evaluate characteristic temperature amplitudes and frequencies, and to give insight into the instability mechanisms of Marangoni convection in this configuration. The simulations were in good agreement with the experimental values, showing temperature fluctuations with frequencies ? 0.25 Hz and amplitudes up to 1.8 C at a position equivalent to that of the sensor tip in the experiment.

Croell, Arne↗
NASA NTRS2013

Method of Promoting Single Crystal Growth During Melt Growth of Semiconductors

The method of the invention promotes single crystal growth during fabrication of melt growth semiconductors. A growth ampoule and its tip have a semiconductor source material placed therein. The growth ampoule is placed in a first thermal environment that raises the temperature of the semiconductor source material to its liquidus temperature. The growth ampoule is then transitioned to a second thermal environment that causes the semiconductor source material in the growth ampoule's tip to attain a temperature that is below the semiconductor source material's solidus temperature. The growth ampoule so-transitioned is then mechanically perturbed to induce single crystal growth at the growth ampoule's tip.

Su, Ching-Hua↗
NASA NTRS1984

A dynamic model for plant growth: validation study under changing temperatures

A dynamic simulation model to describe vegetative growth of plants, for which some functions and parameter values have been estimated previously by optimization search techniques and numerical experimentation based on data from constant temperature experiments, is validated under conditions of changing temperatures. To test the predictive capacity of the model, dry matter accumulation in the leaves, stems, and roots of tobacco plants (Nicotiana tabacum L.) was measured at 2- or 3-day intervals during a 5-week period when temperatures in controlled-environment rooms were programmed for changes at weekly and daily intervals and in ascending or descending sequences within a range of 14 to 34 degrees C. Simulations of dry matter accumulation and distribution were carried out using the programmed changes for experimental temperatures and compared with the measured values. The agreement between measured and predicted values was close and indicates that the temperature-dependent functional forms derived from constant-temperature experiments are adequate for modelling plant growth responses to conditions of changing temperatures with switching intervals as short as 1 day.

NASA Discipline Number 60-40↗