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At least 289 records · Page 16

Generation of out-of-plane ferroelectric behavior in a one-atom-thick monolayer

Ferroelectricity with out-of-plane polarization has so far been found in several two-dimensional (2D) materials, including monolayers comprising three to five planes of atoms, e.g. α-In 2 Se 3 and MoTe 2 . Here, we explore the generation of out-of-plane polarization within a one-atom-thick monolayer material, namely hexagonal boron nitride. We performed density-functional-theory calculations to explore inducing ferroelectric-like distortions through incorporation of isovalent substitutional impurities that are larger than the host atoms. This disparity in bond lengths causes a buckling of the h-BN, either up or down, which amounts to a dipole with two equivalent energies and opposing orientations. We tested several impurities to explore the magnitude of the induced dipole and the switching energy barrier for dipole inversion. The effects of strain, dipole–dipole interactions, and vertical heterostructures with graphene are further explored. Our results suggest a highly-tunable system with ground state antiferroelectricity and metastable ferroelectricity. Finally, we expect that this work will help foster new ways to include functionality in layered 2D-material-based applications.

36 MATERIALS SCIENCE↗

Restoration of weak localization in bilayer graphene by a molecular thin film

Quantum coherent effects can be probed in multilayer graphene through electronic transport measurements at low temperatures. In particular, bilayer graphene (BLG) is known to be susceptible to quantum interference corrections of the conductivity, presenting weak localization at all electronic densities, and dependent on different scattering mechanisms such as those related to the trigonal warping of the electron dispersion near the K and K′ valleys. Proximity effects with a molecular thin film influence these scattering mechanisms, which can be quantified through the known theory of magnetoconductance for BLG. Here, we present electronic transport measurements in a copper-phthalocyanine (CuPc) / BLG / hexagonal boron nitride (h-BN) heterostructure that suggest the restoration of weak localization in BLG, associated to a reduction of trigonal warping effects, that are known to suppress weak localization in BLG. Additionally, we observe a charge transfer of 3.6×10 12 cm −2 from the BLG to the molecules, as well as a very small degradation of the mobility of the BLG/h-BN heterostructure upon the deposition of CuPc. The molecular arrangement of the CuPc thin film is characterized in a control sample through transmission electron microscopy, that we relate to the electronic transport results.

bilayer graphene↗

Few-mode and anisotropic quantum transport in InSb nanoribbons using an all-van der Waals material-based gate

High-quality electrostatic gating is a fundamental ingredient for successful semiconducting device physics, and a key element of realizing clean quantum transport. Inspired by the widespread improvement of transport quality when two-dimensional van der Waals (vdW) materials are gated exclusively by other vdW materials, we have developed a method for gating non-vdW materials with an all-vdW gate stack, consisting of a hexagonal boron nitride dielectric layer and a few-layer graphite gate electrode. We demonstrate this gating approach on MOVPE-grown InSb nanoribbons (NRs), a novel variant of the InSb nanowire, with a flattened cross-section. In our all-vdW gated NR devices we observe conductance features that are reproducible and have low- to near-zero gate hysteresis. We also report quantized conductance, which persists to lower magnetic fields and longer channel lengths than typical InSb nanowire devices reported to date. Additionally, we observe level splitting that is highly anisotropic in an applied magnetic field, which we attribute to the ribbon cross-section. The performance of our devices is consistent with the reduced disorder expected from the all-vdW gating scheme, and marks the first report of ballistic, few-modes quantum transport in a non-vdW material with an all-vdW gate. Our results establish all-vdW gating as a promising approach for high-quality gating of non-vdW materials for quantum transport, which is in principle applicable generically, beyond InSb systems. In addition, the work showcases the specific potential of all-vdW gate/InSb NR devices for enabling clean quantum devices that may be relevant for spintronics and topological superconductivity studies.

InSb↗

Neutral but Impactful: Gallium Cluster-Induced Nanopores from Beam-Blanked Gallium Ion Sources

Neutral atoms originating from liquid metal ion sources are an often-overlooked source of contamination and damage in focused ion beam microscopy. Beyond ions and single atoms, these sources also generate atom clusters. While most studies have investigated charged clusters, here we demonstrate that neutral clusters are also formed. These neutral clusters bypass the electrostatic beam blanking system, allowing them to impinge on samples even when the ion beam is blanked. We investigate this phenomenon using thin (≤20 nm) freestanding membranes of hexagonal boron nitride, silicon, and silicon nitride as targets. Randomly dispersed nanopores that form upon neutral cluster exposure are revealed. The average nanopore diameter is ∼2 nm with a narrow size distribution, suggesting that the atom clusters have a preferred size. Various electron microscopy techniques are used to characterize the nanopores, including high-resolution transmission electron microscopy, multislice ptychography, and electron energy-loss spectroscopy. Finally, we show how electron irradiation in the transmission electron microscope can be used to both remove any amorphous material that may clog the pores and to controllably grow the pores to specific sizes. Tunable nanopores such as these are interesting for nanofluidic applications requiring size-selective membranes.

Byrne, Dana O↗

Pairing around a single Dirac point: A unifying view of Kohn-Luttinger superconductivity in Chern bands, quarter metals, and topological surface states

Superconductivity of a single two-dimensional Dirac fermion offers a natural route to topological superconductivity. While usually considered extrinsic—arising from proximity to a conventional superconductor—we investigate when a doped Dirac cone can develop superconductivity from a short-range repulsive interaction 𝑈 via the Kohn–Luttinger mechanism. We show that an ideal, linear Dirac cone is immune to pairing at leading order in 𝑈 2 . Superconductivity instead emerges only through higher-order in 𝑘 corrections to the dispersion, which are unavoidable in any lattice realization and crucially dictate the pairing symmetry. The form of the pairing thus reflects how the well-known obstruction to realizing a single Dirac cone on a lattice is circumvented. When a Dirac cone arises from broken time-reversal symmetry—for instance, at a transition between Chern insulators or in a valley-polarized phase—we find a topological 𝑝−𝑖⁢𝑝 state whose chirality is opposite to that of the parent chiral metal above 𝑇 𝑐 . By contrast, for a surface Dirac cone of a 3D topological insulator, superconductivity is stabilized by anisotropies in the dispersion. For 𝐶 3⁢𝑣 -symmetric warping, as in , pairing is strongest when the Fermi surface becomes hexagonal, leading to order in the (𝑑±𝑖⁢𝑑)×(𝑝+𝑖⁢𝑝) channel with accidental near-nodes. In the highly anisotropic limit 𝑣 𝑥 ≫𝑣 𝑦 , relevant to side surfaces of layered materials, the Fermi surface splits into two branches, and nesting favors a pairing symmetry 𝛥∼s⁢g⁡n⁢(𝑘 𝑥 )⁢cos⁡(𝑘 𝑦 ) reminiscent of organic superconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Chirality reversal at finite magnetic impurity strength and local signatures of a topological phase transition

Here, we study the honeycomb lattice with a single magnetic impurity modeled by adding imaginary next-nearest-neighbor hopping 𝑖⁢ℎ on a single hexagon. This Haldane defect gives a topological mass term to the gapless Dirac cones and generates chirality. For a small density of defects, Neehus et al. [Phys. Rev. Lett. 135, 126604 (2025)] found that the system's chirality reverses at a critical ℎ 𝑐 ≈ 0.95 associated with an unexpected tricritical point of Dirac fermions at zero defect density. We investigate this zero-density limit by analyzing a single defect and computing two experimentally relevant measures of chirality: (1) orbital magnetization via local Chern marker, a bulk probe of all occupied states; and (2) electronic currents of low-energy states. Both probes show a chirality reversal at a critical ℎ 𝑐 ≈ 0.9–1.0. Motivated by this consistency, we propose a defect-scale toy model whose low-energy states reverse their chirality at ℎ$^{'}_{c}$ ≈ 0.87. Remarkably, the same pair of zero-energy bound states also generates the critical point ℎ 𝑐 in the full impurity projected T-matrix. Our results show how the chirality reversal produced by an impurity can be observed either in local probes or in the global topology, and suggest a possible role of the microscopic defect structure at the critical point.

Chern insulators↗

Conventional superconductivity in single-crystalline BiPt

Binary Bi-Pd/Pt systems have attracted a lot of interest because of their topologically nontrivial nature along with superconductivity. We report the structural and superconducting properties of high-quality single-crystalline BiPt using a comprehensive range of experimental techniques, including X-ray diffraction, electron microscopy, muon spin rotation/relaxation (𝜇⁢SR), magnetization, resistivity, and heat capacity. Our findings establish that BiPt is a weak type-II superconductor with a transition temperature (𝑇 𝑐 ) of 1.2 K which exhibits pronounced anisotropic superconducting characteristics attributed to its hexagonal crystal structure. Magnetization and electronic transport studies reveal that BiPt lies within the dirty limit, while 𝜇⁢SR and heat capacity data indicate conventional 𝑠-wave superconductivity that maintains time-reversal symmetry. Here, this work provides valuable insights into the pairing symmetry and superconducting mechanism of topologically trivial BiPt, a sound comparison system for other Bi-based topologically nontrivial superconductors.

Demagnetization↗

Stabilization of magnetic bubbles in [Ni/Co]n multilayers on an oxygen-reconstructed Nb(110) surface via an ultra-thin Cu interlayer

Magnetic thin films hosting topological spin textures, such as magnetic skyrmions, hold high potential for breakthroughs in the field of spintronics, due to good scalability and energy efficiency. Novel computational architectures such as memory-in-logic devices rely on material platforms able to host those topological spin textures. Furthermore, recently proposed designs of novel quantum information technologies are based on heterostructures where topological spin textures are in direct proximity to a superconducting layer. Here, we demonstrate the stabilization of out-of-plane magnetic bubbles in highly ordered [Ni/Co]n multilayers on a Nb(110) single crystal. This is achieved without the need for the removal of the well-known Nb(110)-oxide surface reconstruction, due to the introduction of an ultra-thin Cu interlayer in between the Nb substrate and the magnetic multilayer. The Cu interlayer generates a well-ordered hexagonal surface, which is key for the epitaxial growth of the [Ni/Co]n multilayers hosting the desired out-of-plane anisotropy. The magnetic ground state of the prepared material stacks is directly imaged via spin-polarized low-energy electron microscopy, revealing the presence of magnetic bubble domains with lateral sizes as small as 450 nm.

Dibajeh, Ahmad↗

Anisotropic magnetic behavior of Nd 3 ⁢ScBi 5 and Pr 3 ⁡ScBi 5 single crystals

Here, we report an investigation of the magnetic, thermodynamic, and transport properties of single-crystalline Nd 3 ⁢ScBi 5 and Pr 3 ⁡ScBi 5 . Both compounds crystallize in the hexagonal 𝑃⁢6 3 /𝑚⁢𝑐⁢𝑚 space group that is common to related materials with rare-earth atoms that form twisted kagome nets. Nd 3 ⁢ScBi 5 undergoes two successive antiferromagnetic transitions, at 𝑇 𝑁 =5.6K and 𝑇 2 =4.7K. When a magnetic field is applied along [100], both 𝑇 𝑁 and 𝑇 2 are suppressed with increasing field, and multiple metamagnetic transitions are observed; in-plane anisotropy is demonstrated by a slight broadening and movement of the metamagnetic transitions when the field is applied along [110]. For H ∥ [001], 𝑇 𝑁 and 𝑇 2 exhibit only a weak field dependence and metamagnetic transitions are not observed. The magnetoresistance and Hall effect respond strongly to the metamagnetic transitions and further motivate a detailed characterization of the magnetic structures under applied fields. Pr 3 ⁡ScBi 5 , in contrast, undergoes a single antiferromagnetic transition at 𝑇 𝑁 =5.3K and a single metamagnetic transition at higher fields. These findings place Nd 3 ⁢ScBi 5 and Pr 3 ⁡ScBi 5 as promising systems for exploring anisotropic magnetism and field-driven magnetic phase transitions in intermetallic compounds.

36 MATERIALS SCIENCE↗

Interlayer Exciton Condensates between Second Landau Level Orbitals in Double Bilayer Graphene

Here, we present Coulomb-drag measurements on a heterostructure comprising two Bernal-stacked bilayer graphene (BLG) sheets separated by a 2.5 nm hexagonal boron nitride (hBN) spacer in the quantum Hall (QH) regime. Using top and bottom gate control, together with an interlayer bias, we independently tune the two BLG layers into either the lowest (N = 0) or second (N = 1) Landau level (LL) orbital and probe their interlayer QH states. When both layers occupy the N = 0 orbital, we observe both interlayer exciton condensates (ECs) at integer total filling and interlayer fractional QH states, echoing the results in double monolayer graphene. In contrast to previous studies, however, when both BLG layers occupy the N = 1 orbital, we also observe quantized drag signals, signifying an interlayer exciton condensate formed between the second LLs. By tuning the layer degree of freedom, we find that this N = 1 EC state arises only when the N = 1 wave function in each BLG is polarized toward the hBN interface to maximize the interlayer Coulomb interaction.

Electrical conductivity↗

Electrical readout of topological spin order in ultrathin insulators with small magnetization

Probing magnetic order in insulators with small magnetization is particularly challenging in the ultrathin limit, where magnetometry and diffraction lose sensitivity. Here, in this study, we show that topological spin order with vanishingly small magnetization can be electrically detected through an interfacial topological Hall effect in heavy-metal/magnetic-insulator heterostructures. Using Pt coupled to the canted antiferromagnetic insulator hexagonal LuFe⁢O 3 (h-LuFe⁢O 3 ) we observe an unusually large and robust Hall response arising from the transfer of real-space spin topology across the interface via magnetic proximity effect (MPE). This interfacial signal enables detection of magnetic order in h-LuFe⁢O 3 with an extremely small net magnetization (0.025 𝜇 B /Fe), corresponding to Hall-conductivity-magnetization ratio ≈ 2 V −1 , which is one to two orders of magnitude large than other MPE-induced Hall effects and anomalous Hall effects of conducting magnets. This high sensitivity allows detection of magnetic order in h-LuFe⁢O 3 down to a thickness of only 1.5 unit cells. Our results establish an interfacial Hall-based approach for electrically probing topological spin structures in ultrathin insulators and the related interfaces, enabling access to magnetic order in regimes where conventional probes fail.

Topological Hall Effect↗

From diamond to BC8 to simple cubic and back: Kinetic pathways to post-diamond carbon phases from metadynamics

Understanding the kinetic pathways connecting carbon polymorphs at multimegabar pressures remains a major unsolved problem in high-pressure physics. Here, we provide insights into the long-standing question of BC8 formation and stability by combining a state-of-the-art SNAP machine-learning interatomic potential with enhanced sampling via metadynamics, enabling direct access to transition mechanisms far beyond the reach of standard molecular dynamics. Our simulations show that carbon phase transformations are intrinsically complex, proceeding through multiple intermediate disordered and crystalline states governed by nontrivial kinetic ordering. We determine the upper pressure limit for BC8 formation and reveal that hexagonal diamond transforms to BC8 faster than cubic diamond—an unexpected and experimentally testable prediction. We also identify a 𝑃⁢222 carbon phase that becomes competitive with diamond and simple cubic above 1.8 TPa, and we demonstrate that BC8 may be quenched to ambient conditions at moderate temperatures. Altogether, these results establish a general and transferable framework for resolving kinetic pathways in solid-solid phase transitions and provide physical insights into carbon's complex high-pressure landscape.

36 MATERIALS SCIENCE↗

Tuning the magnetic properties of the spin-split antiferromagnet MnTe through pressure

The hexagonal antiferromagnet MnTe has attracted enormous interest as a prototypical example of a spin-compensated magnet in which the combination of crystal and spin symmetries lifts the spin degeneracy of the electron bands without the need for spin-orbit coupling, a phenomenon called nonrelativistic spin splitting (NRSS). Subgroups of NRSS are determined by the specific spin-interconverting symmetry that connects the two opposite-spin sublattices. In MnTe, this symmetry is rotation, leading to the subgroup with spin splitting away from the Brillouin zone center, often called altermagnetism. MnTe also has the largest spontaneous magnetovolume effect of any known antiferromagnet, implying strong coupling between the magnetic moment and volume. This magnetostructural coupling offers a potential knob for tuning the spin-splitting properties of MnTe. Here, we use neutron diffraction with in situ applied pressure to determine the effects of pressure on the magnetic properties of MnTe and further explore this magnetostructural coupling. We find that applying pressure significantly increases the Néel temperature, but decreases the ordered magnetic moment. We explain this as a consequence of strengthened magnetic exchange interactions under pressure, resulting in higher 𝑇 N , with a simultaneous reduction of the local moment of individual Mn atoms, described here via density functional theory. This reflects the increased orbital hybridization and electron delocalization with pressure. In conclusion, these results shed light on the competition between magnetic exchange interactions and the strength of individual magnetic moments and show that the magnetic properties of MnTe can be controlled by pressure, opening the door to improved properties for spintronic applications through tuning via physical or chemical pressure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetic order and physical properties of the kagome metal UNb 6 ⁢Sn 6

The 𝑅⁢𝑀 6 ⁢𝑋 6 family of materials (𝑅 = rare-earth, 𝑀 = transition metal, 𝑋 = Ga, Si, Ge, Sn) produces an array of emergent phenomena, such as charge density waves, intrinsic Hall effects, and complex magnetic order, due to its kagome net of transition metal atoms, its local-moment magnetic anisotropies, and its extensive chemical tunability. Here, in this study, we report UNb 6⁢ Sn 6 , a new “166” material containing both an actinide and a 4⁢𝑑 transition metal, along with its nonmagnetic analog ThNb6⁢Sn6, to investigate the properties of a 5⁢𝑓−4⁢𝑑 electron 166 system. UNb 6 ⁢Sn 6 crystallizes in the hexagonal 𝑃⁢6/𝑚⁢𝑚⁢𝑚 space group with a small degree of disorder due to shifts in the size of the CoSn-like cages along the 𝑐 axis. Upon cooling at zero magnetic field, the material undergoes two magnetic phase transitions at 𝑇 2 = 46K and 𝑇 N = 43K. The low-temperature, zero-field phase is an antiferromagnet with ordered uranium moments and a k = (0,0,1/2) propagation vector determined by neutron diffraction. Remarkably, with a magnetic field applied along the 𝑐 axis, five additional magnetic transitions occur, evidenced by magnetization and resistivity data, before the moment saturates at 2.62 𝜇 B /U at 2 K and ≥ 13.6T. In two magnetic phase regions, the Hall resistivity of UNb 6⁢ Sn 6 significantly deviates from the magnetization, suggesting that the phases have a large Berry curvature or a change in the Fermi surface. The unknown magnetic ordering of the field-dependent phases of UNb 6⁢ Sn 6 demonstrates the complexity of the 5⁢𝑓−4⁢𝑑 166 system and encourages further study of its properties.

36 MATERIALS SCIENCE↗

Anisotropic magnetism and Kondo-lattice behavior in the frustrated antiferromagnet Ce 3 ⁢MgBi 5

Here, we report the synthesis and physical characterization of single-crystalline Ce 3 ⁢MgBi 5 , a previously unexplored member of the Ce 3 ⁢𝑀⁢𝑃⁢𝑛 5 family. This compound crystallizes in the hexagonal 𝑃⁢6 3 /𝑚⁢𝑐⁢𝑚 structure, featuring an anisotropic Ce sublattice composed of zigzag chains along the 𝑐 axis and a distorted kagome-like network in the basal plane. Magnetization measurements reveal antiferromagnetic order below 𝑇 𝑁 ≈ 4.2K with strong magnetic anisotropy and multiple field-induced metamagnetic transitions for fields applied perpendicular to [001], leading to a dome-shaped 𝐻–𝑇 phase diagram. Electrical transport exhibits characteristic signatures of a Ce-based Kondo lattice, including broad resistivity maxima and pronounced field-dependent anomalies in the magnetoresistance and Hall response that track the magnetic phase boundaries. Specific-heat measurements confirm the magnetic transition and show that the full R ⁢ln⁡ 2 entropy expected for a Ce 3+ Kramers doublet is recovered by 20 K, indicating an extended temperature range of magnetic fluctuations consistent with Kondo correlations. Our results establish Ce 3 ⁢MgBi 5 as a platform within the Ce 3 ⁢𝑀⁢𝑃⁢𝑛 5 family for exploring the interplay of geometric frustration, magnetic anisotropy, and Kondo-lattice physics under applied magnetic fields.

Kondo effect↗

Heterostructural interface engineering for ultrawide-gap nitrides from first principles: Ta C / Al N and Ta C / Ga N rocksalt-wurtzite interfaces

Epitaxial lattice matching is an important condition for the formation of coherent interfaces with low defect densities. However, lattice-matched substrates with the same crystal structure as the active layer are often not available, suggesting opportunities for utilizing heterostructural interfaces. For example, at high Al contents that are interesting for ultrawide-gap applications in power electronics, Al x ⁢Ga 1-x ⁢N semiconductor alloys in the (0001) orientation of the wurtzite (wz) structure become lattice-matched to (111)-oriented rocksalt (rs) Ta⁢C substrates. To predict the expected interface atomic structures under different synthesis conditions, we perform high-throughput density-functional-theory calculations, using an algorithm for systematic sampling of the possible stacking sequences of the atomic layers on the in-plane hexagonal lattice. The approach considers octahedral, tetrahedral, and prismatic coordination motifs, and is generally applicable for the modeling of commensurate rs/wz heterostructural interfaces. Our results provide guidance for synthesis control of substrate-film bonding and the polarity of ultrawide-gap Al x⁢ Ga 1-x⁢ N alloys on Ta⁢C substrates.

36 MATERIALS SCIENCE↗

Atomic structure and melting of Ni and Fe 36 Ni up to 400 GPa

Iron, nickel and its alloys are critically important materials for industrial and technological applications due to their unique magnetic properties, strength, and thermal expansion. In this study, lasers were used to compress and heat Fe 36 Ni alloy (36 wt% Ni) and pure nickel up to the melting temperature using a combination of shock and ramp compression. The structure was measured using nanosecond in-situ x-ray diffraction, and simultaneous velocimetry was used to measure the pressure up to 454 GPa. A mixed face-centered-cubic (fcc) solid–liquid phase in Fe 36 Ni at 311 GPa provides experimental evidence that, compared to pure iron, the incorporation of nickel expands the stability field of the fcc phase to the melting curve. At lower temperatures, a mixed fcc and hexagonal-close-packed (hcp) phase is observed in ramp-compressed Fe 36 Ni at 278 GPa. At the higher compressions, a structure inconsistent with fcc, hcp, and body-centered cubic (bcc) is observed. In the case of pure Ni, the fcc phase is stable under ramp compression up to 402 GPa.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electronic and magnetic structures of a mixed triple perovskite: Ba 3 NiRuIrO 9

In search of spin-orbit coupling driven nonmagnetic J = 0 ground state and excitonic magnetism, various pentavalent iridates have been studied in recent years. However, a finite moment was observed in most of the cases due to solid state effects. Here, in this work, we investigate the electronic and magnetic structure of 6H hexagonal compound Ba 3 NiRuIrO 9 , where Ir 5+ is present along with magnetic Ni 2+ and Ru 5+ ions. Magnetic susceptibility measurements and neutron powder diffraction (NPD) experiments demonstrate the appearance of short-range magnetic ordering below 170 K and a long-range antiferromagnetic ordering below 80 K. The refinement of the NPD pattern further shows that the Ru and Ir moments interact antiferromagnetically within the dimer and interact ferromagnetically with the Ni sublattice. These experimental findings have been complemented by first-principles density functional theory calculations incorporating spin-orbit coupling effects and electronic correlations for the transitional metal d states. The computed magnetocrystalline anisotropy is also found to be significant and the crystallographic c axis comes out to be the easy axis of magnetization, consistent with the spin alignment direction found from NPD. This study shows that the mixed ruthenate iridate triple perovskite series is a promising family to study the interplay among spin-orbit coupling, electron correlation, and electron filling as a variety of Ba 3 M RuIrO 9 with M as a transition metal ion, rare-earth ion, and alkali metal ions can be synthesized.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗