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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Embedding ceramic components in metal structures with hybrid directed energy deposition

The combined benefit of both additive and subtractive manufacturing within the same gantry system enables hybrid directed energy deposition to create complex geometries with smooth surface finish and superior dimensional accuracy. Moreover, with layer-by-layer access to the structure during both the addition and subtraction of material, the insertion of components is now possible, assuming the components can survive the high temperatures associated with the subsequent metal deposition. Ceramic inserts are of interest for a variety of reasons including (1) to create complex interwoven ductile/brittle composites for ballistics or high-temperature applications or (2) to integrate high-temperature strain or temperature sensors protected within ceramic substrate subsumed into a larger metal structure. Here, in this work, stainless steel substrates were machined to create an internal cavity for the insertion of a ceramic component. During the investigation of several different over-the-ceramic deposition strategies, components were inserted, and different process sequences were allowed to continue to envelop the inserted ceramic with varying success. Unmelted powder was used to serve both as a thermal buffer and to provide a flush surface upon which the laser cladding could continue. Subsequent depositions were attempted with both dry and wet powder (addition of machining coolant to wet). The wet powder has previously been demonstrated to not significantly impact the mechanical properties of a final structure and provided a thermal barrier to protect the ceramic piece from the extreme temperatures of the final metal deposition. The wetting of the powder provided stability and minimized displacement caused by the powder flow from the laser cladding head. Finally, the use of an oblique angle for laser cladding allowed for the redirection of some fraction of the introduced thermal energy away from the ceramic component and, consequently, improved the survival of the ceramic inserts. With this combination of techniques, ceramic inserts survived full embedding within a 3D-printed stainless steel structure.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Heat-induced drift reduction of time of flight in fused quartz acoustic waveguides via annealing process

High temperature structural acoustic sensors play an important role in many applications. Fused quartz waveguide is a popular choice due to its resistance to harsh environments and its convenience of modification. However, time of flight between pulse and echo, which is widely used in these sensors, tends to encounter drifts in fast temperature changing process even after temperature returns to initial value. In this article, different annealing process are performed for a special modified fused quartz waveguide with a sensor node. Annealing treatment is found able to reduce the drift when the waveguide undergoes a sudden temperature spike to 1000 °C at 500 kHz operating acoustic frequency, and the best annealing condition could make the drift one magnitude smaller. A following temperature test up to 1000 °C shows consistent measurement readings.

Hileman, Zachary (ORCID:0000000226529274)↗
NASA NTRS1987

Joining of ceramics for high temperature applications

Summarized is a literature survey of the methods for joining ceramics to ceramics or ceramics to metals for high temperature applications. Also mechanical properties and potential applications of the joints are considered. The joining of ceramics is usually carried out by brazing or diffusion bonding. Especially the latter has been found useful, increasing the application of bonded ceramics. The possibility of using electron beam and laser beam welding for joining ceramics has also recently been investigated. The bonding of ceramics has found numerous applications typical for high operating temperatures, i.e., sensors and thermocouples.

Vilpas, Martti↗
NASA NTRS2001

Palladium Implanted Silicon Carbide for Hydrogen Sensing

Silicon carbide is intended for use in fabrication of high-temperature, efficient hydrogen sensors. Traditionally, when a palladium coating is applied on the exposed surface of SiC, the chemical reaction between palladium and hydrogen produces a detectable change in the surface chemical potential. We have produced both a palladium coated SiC as well as a palladium, ion implanted SiC sensor. The palladium implantation was done at 500 C into the Si face of 6H, N-type SiC at various energies, and at various fluences. Then, we measured the hydrogen sensitivity response of each fabricated sensor by exposing them to hydrogen while monitoring the current flow across the p-n junction(s), with respect to time. The sensitivity of each sensor was measured at temperatures between 27 and 300 C. The response of the SiC sensors produced by Pd implantation has revealed a completely different behaviour than the SiC sensors produced by Pd deposition. In the Pd-deposited SiC sensors as well as in the ones reported in the literature, the current rises in the presence of hydrogen at room temperature as well as at elevated temperatures. In the case of Pd-implanted SiC sensors, the current decreases in the presence of hydrogen whenever the temperature is raised above 100 C. We will present the details and conclusions from the results obtained during this meeting.

Muntele, C. I.↗
NASA NTRS2004

Quantification Of 4H- To 3C-Polymorphism In Silicon Carbide (SiC) Epilayers And An Investigation Of Recombination-Enhanced Dislocation Motion In SiC By Optical Emission Microscopy (Oem) Techniques

Environments that impose operational constraints on conventional silicon-(Si) based semiconductor devices frequently appear in military- and space-grade applications. These constraints include high temperature, high power, and high radiation environments. Silicon carbide (SiC), an alternative type of semiconductor material, has received abundant research attention in the past few years, owing to its radiation-hardened properties as well as its capability to withstand high temperatures and power levels. However, the growth and manufacture of SiC devices is still comparatively immature, and there are severe limitations in present crystal growth and device fabrication processes. Among these limitations is a variety of crystal imperfections known as defects. These imperfections can be point defects (e.g., vacancies and interstitials), line defects (e.g., edge and screw dislocations), or planar defects (e.g., stacking faults and double-positioning boundaries). All of these defects have been experimentally shown to be detrimental to the performance of electron devices made from SiC. As such, it is imperative that these defects are significantly reduced in order for SiC devices to become a viable entity in the electronics world. The NASA Glenn High Temperature Integrated Electronics & Sensors Team (HTIES) is working to identify and eliminate these defects in SiC by implementing improved epitaxial crystal growth procedures. HTIES takes two-inch SiC wafers and etches patterns, producing thousands of mesas into each wafer. Crystal growth is then carried out on top of these mesas in an effort to produce films of improved quality-resulting in electron devices that demonstrate superior performance-as well as fabrication processes that are cost-effective, reliable, and reproducible. In this work, further steps are taken to automate HTIES' SiC wafer inspection system. National Instruments LabVIEW image processing and pattern recognition routines are developed that are capable of quantifying and mapping defects on both the substrate and mesa surfaces, and of quantifying polymorphic changes in the grown materials. In addition, an optical emission microscopy (OEM) system is developed that will facilitate comprehensive study of recombination-enhanced dislocation motion (REDM).

Speer, Kevin M.↗
DOE OSTI2021

First Annual Report on Development of Microwave Resonant Cavity Transducer for Fluid Flow Sensing: Development of Sensor Performance Model of Microwave Cavity Flow Meter for Advanced Reactor High Temperature Fluids

We are investigating a microwave cavity-based transducer for in-core high-temperature fluid flow sensing in molten salt cooled reactors (MSCR) and sodium fast reactors (SFR). This sensor is a hollow metallic cylindrical cavity, which can be fabricated from stainless steel, and as such is expected to be resilient to radiation, high temperature and corrosive environment of MSCR and SFR. The principle of sensing consists of making one wall of the cylindrical cavity flexible enough so that dynamic pressure, which is proportional to fluid velocity, will cause membrane deflection. Membrane deflection causes cavity volume change, which leads to a shift in the resonant frequency. Feasibility of the sensor was initially investigated with analytical derivations and with COMSOL RF Module computer simulations of resonant frequency spectral shift due to uniform load. We also investigated the mechanical integrity of the flowmeter’s membrane through analytical modelling and COMSOL Structural Mechanics Module computer simulations. Both the analytic model and COMSOL model showed that maximum stresses on the plate, which are at the radial boundary of the plate, are three orders of magnitude smaller than the material’s yield strength and ultimate tensile strength. This indicates that the sensor is at a low risk of mechanical failure. Using results from models, we have developed an initial design for a microwave K-band sensor. A cylindrical resonator prototype was fabricated from brass for the initial tests. The external dimensions of the cavity are matched to the flange of a standard WR-42 waveguide. Microwave field is coupled into the resonant cavity through a subwavelength-size aperture. A test article was developed consisting of a piping Tee with a bulkhead WR-42 microwave waveguide installed in a leak-proof assembly. A microwave waveguide circulator was installed in the setup to suppress the effect of reflections at the cavity entrance by increasing the isolation between the input and the output port. Preliminary spectral characterization of cavity spectral response was performed with a portable PXIe chassis microwave VNA with a custom GUI. Preliminary dry tests of the transducer response were conducted with a set of calibrated weights. Transducer frequency shift was shown to be monotonically increasing with increasing pressure. The next steps will involve investigation of the transducer performance for water flow sensing.

42 ENGINEERING↗
NASA NTRSDate not supplied

A Brief Overview of Relevant Silicon Carbide Electronics and Sensor Development for Long Duration Venus Surface Exploration

This presentation concentrates on the potential of long duration Venus surface missions, and the role of Silicon Carbide (SiC) electronics and sensor advancements in such exploration. For example, SiC integrated circuit (IC) electronics have matured to a state where a simple long-life scientific probe is feasible for extended Venus surface operations. These electronics have been demonstrated for more than a year at 500˚C, and 60 days in high-fidelity simulated Venus surface conditions [1-2]. Further, high temperature chemical sensing technology, including SiC-based gas sensors, integrated with SiC electronics can enable future exploration of the Venus surface atmosphere [3]. Continued maturation of these high temperature electronics and sensors has been part of the Long-Lived In-Situ Solar System Explorer (LLISSE) project to provide an operational system for in situ exploration of the Venus surface up to 60 days [4]. A key focus of this work includes increasing the complexity and decreasing the power consumption of the ICs which will pave the way to enhanced capabilities, such as long-duration Venus seismic measurements and other mission capabilities currently under development. This is in parallel to work expanding the capabilities of the sensor technology to provide science measurements on the Venus surface. This presentation will give an overview of possible extended duration Venus surface exploration and some of the SiC-based technologies that can enable this exploration.

high temperature Venus surface electronics sensors↗
NASA NTRS1998

Microfabricated Chemical Sensors for Safety and Emission Control Applications

Chemical sensor technology is being developed for leak detection, emission monitoring, and fire safety applications. The development of these sensors is based on progress in two types of technology: 1) Micromachining and microfabrication (MicroElectroMechanical Systems (MEMS)-based) technology to fabricate miniaturized sensors. 2) The development of high temperature semiconductors, especially silicon carbide. Using these technologies, sensors to measure hydrogen, hydrocarbons, nitrogen oxides, carbon monoxide, oxygen, and carbon dioxide are being developed. A description is given of each sensor type and its present stage of development. It is concluded that microfabricated sensor technology has significant potential for use in a range of aerospace applications.

Hunter, G. W.↗
NASA NTRS1996

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Source record↗
DOE OSTI2022

Real-time sensor measurements to evaluate impacts of load cycling on high-temperature fire-side corrosion in a PC boiler

The main objective of this research program is to design, manufacture, and demonstrate a miniaturized, multi-process, monitoring system (mMPMS) for boiler condition management and easy system deployment to obtain a higher spatial resolution. This system will facilitate a Condition-Based Maintenance (CBM) philosophy that actively monitors the health of assets to predict and prevent failures and maximize availability and generating capacity at a reduced cost. CBM systems can provide boiler data that the advanced process control (APC) system can utilize for plant performance optimization, which is increasingly relevant as coal power plants shift from predominantly base-load operation to predominantly transient operation involving large load swings. The mMPMS is based on an electrochemical sensor that provides a real-time indication of the risk of damage to key locations in the radiant or convective section of a coal-fired boiler such as metal loss rates, heat flux, metal surface temperature, and deposit thickness. These indications can be utilized to optimize boiler performance as well as improve boiler availability in conjunction with corresponding operating conditions. This monitoring system was developed and tested in the high-temperature regions of coal-fired utility boilers in this project but can be applied to many other industries and applications as well. This project leveraged the existing electrochemical noise-based monitoring system and the new sensor design is small enough to be installed through the webbing of the waterwalls without the need for long shut-downs to bend tubes and to make it feasible to obtain high spatial resolution in the boiler. Data is transferred to the plant distributed control system (DCS) and any other control system. The sensor body that houses the sensor assembly was designed to ensure good conductive contact with boiler tubes to ensure the sensor is held at an identical temperature to the tube surface temperature. The data acquisition and signal conditioning modules were redesigned into a small footprint with optimized cooling of the module. System software was developed specifically for the new signal conditioning module and is compatible with plant PLCs. After the preliminary testing at a pilot-scale facility, the three mMPMS were installed at a full-scale pulverized coal-fired plant, PacifiCorp’s Hunter 3. The systems were demonstrated over 20,000 hours at the plant during regular operation. Also, the sensor data was fed to the plant’s advanced process control system to evaluate the corrosion control by the operation changes and utilized to understand the impacts of load cycling with different ramping up and down speeds. At the end of the project, the systems were converted to the permanent installation at the power plant to be used with the advanced process control system installed at the plant.

Advanced Sensors, Corrosion, Ash Deposition, Optim↗
DOE OSTI2022

Non-invasive, in situ diagnosis and monitoring of corrosion in high temperature systems

Techniques for non-invasive diagnosis and/or monitoring of corrosion in high temperature systems using specialized sensors that produce multi-mode acoustic signals in situ for accurate determination of wall loss and/or physical property changes for a vessel in contact with a high temperature, highly corrosive substance are disclosed. Sensitivity of a few microns (or about 0.1%) of wall loss, detection of changes in physical properties of vessel contents (e.g., approximately 1%), or both, at temperatures of 500° C., 600° C., or higher may be realized. Corrosion may be identified and/or monitored using time domain, frequency domain, or mixed time domain and frequency domain analysis of signal characteristics, signal delay, or both, for relatively short circumferential acoustic wave propagation (e.g., a few inches), as well as relatively long axial acoustic wave propagation (e.g., tens of feet).

Findikoglu, Alp Tugrul↗
NASA NTRS1992

The trade-off characteristics of acoustic and pressure sensors for the NASP

Results of a trade study for the development of pressure and acoustic sensors for use on the National Aerospace Plane (NASP) are summarized. Pressure sensors are needed to operate to 100 psia; acoustic sensors are needed that can give meaningful information about a 200 dB sound pressure level (SPL) environment. Both sensors will have to operate from a high temperature of 2000 F down to absolute zero. The main conclusions of the study are the following: (1) Diaphragm materials limit minimum size and maximum frequency response attainable. (2) No transduction is available to meet all the NASP requirements with existing technology. (3) Capacitive sensors are large relative to the requirement, have limited resolution and frequency response due to noise, and cable length is limited to approximately 20 feet. (4) Eddy current sensors are large relative to the requirement and have limited cable lengths. (5) Fiber optic sensors provide the possibility for a small sensor, even though present developments do not exhibit that characteristic. The need to use sapphire at high temperature complicates the design. Present high temperature research sensors suffer from poor resolution. A significant development effort will be required to realize the potential of fiber optics. (6) Short-term development seems to favor eddy current techniques with the penalty of larger size and reduced dynamic range for acoustic sensors. (7) Long-term development may favor fiber optics with the penalties of cost, schedule, and uncertainty.

Winkler, Martin↗
NASA NTRS1997

Reliable Breakdown Obtained in Silicon Carbide Rectifiers

The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Neudeck, Philip G.↗
NASA NTRS2017

High Count-Rate Study of Two TES X-Ray Microcalorimeters With Different Transition Temperatures

We have developed transition-edge sensor (TES) microcalorimeter arrays with high count-rate capability and high energy resolution to carry out x-ray imaging spectroscopy observations of various astronomical sources and the Sun. We have studied the dependence of the energy resolution and throughput (fraction of processed pulses) on the count rate for such microcalorimeters with two different transition temperatures T(sub c). Devices with both transition temperatures were fabricated within a single microcalorimeter array directly on top of a solid substrate where the thermal conductance of the microcalorimeter is dependent upon the thermal boundary resistance between the TES sensor and the dielectric substrate beneath. Because the thermal boundary resistance is highly temperature dependent, the two types of device with different T(sub c)(sup s) had very different thermal decay times, approximately one order of magnitude different. In our earlier report, we achieved energy resolutions of 1.6 and 2.eV at 6 keV from lower and higher T(sub c) devices, respectively, using a standard analysis method based on optimal filtering in the low flux limit. We have now measured the same devices at elevated x-ray fluxes ranging from 50 Hz to 1000 Hz per pixel. In the high flux limit, however, the standard optimal filtering scheme nearly breaks down because of x-ray pile-up. To achieve the highest possible energy resolution for a fixed throughput, we have developed an analysis scheme based on the socalled event grade method. Using the new analysis scheme, we achieved 5.0 eV FWHM with 96 Percent throughput for 6 keV x-rays of 1025 Hz per pixel with the higher T(sub c) (faster) device, and 5.8 eV FWHM with 97 Percent throughput with the lower T(sub c) (slower) device at 722 Hz.

Lee, Sang-Jun↗
NASA NTRS2003

Packaging Technology Designed, Fabricated, and Assembled for High-Temperature SiC Microsystems

A series of ceramic substrates and thick-film metalization-based prototype microsystem packages designed for silicon carbide (SiC) high-temperature microsystems have been developed for operation in 500 C harsh environments. These prototype packages were designed, fabricated, and assembled at the NASA Glenn Research Center. Both the electrical interconnection system and the die-attach scheme for this packaging system have been tested extensively at high temperatures. Printed circuit boards used to interconnect these chip-level packages and passive components also are being fabricated and tested. NASA space and aeronautical missions need harsh-environment, especially high-temperature, operable microsystems for probing the inner solar planets and for in situ monitoring and control of next-generation aeronautical engines. Various SiC high-temperature-operable microelectromechanical system (MEMS) sensors, actuators, and electronics have been demonstrated at temperatures as high as 600 C, but most of these devices were demonstrated only in the laboratory environment partially because systematic packaging technology for supporting these devices at temperatures of 500 C and beyond was not available. Thus, the development of a systematic high-temperature packaging technology is essential for both in situ testing and the commercialization of high-temperature SiC MEMS. Researchers at Glenn developed new prototype packages for high-temperature microsystems using ceramic substrates (aluminum nitride and 96- and 90-wt% aluminum oxides) and gold (Au) thick-film metalization. Packaging components, which include a thick-film metalization-based wirebond interconnection system and a low-electrical-resistance SiC die-attachment scheme, have been tested at temperatures up to 500 C. The interconnection system composed of Au thick-film printed wire and 1-mil Au wire bond was tested in 500 C oxidizing air with and without 50-mA direct current for over 5000 hr. The Au thick-film metalization-based wirebond electrical interconnection system was also tested in an extremely dynamic thermal environment to assess thermal reliability. The I-V curve1 of a SiC high-temperature diode was measured in oxidizing air at 500 C for 1000 hr to electrically test the Au thick-film material-based die-attach assembly.

Chen, Liang-Yu↗
NASA NTRS2004

Infrared and Passive Microwave Radiometric Sea Surface Temperatures and Their Relationships to Atmospheric Forcing

The current generation of infrared (IR) and passive microwave (MW) satellite sensors provides highly complementary information for monitoring sea surface temperature (SST). On the one hand, infrared sensors provide high resolution and high accuracy but are obscured by clouds. Microwave sensors on the other hand, provide coverage through non-precipitating clouds but have coarser resolution and generally poorer accuracy. Assuming that the satellite SST measurements do not have spatially variable biases, they can be blended combining the merits of both SST products. These factors have motivated recent work in blending the MW and IR data in an attempt to produce high-accuracy SST products with improved coverage in regions with persistent clouds. The primary sources of retrieval uncertainty are, however, different for the two sensors. The main uncertainty in the MW retrievals lies in the effects of wind-induced surface roughness and foam on emissivity, whereas the IR retrievals are more sensitive to the atmospheric water vapor and aerosol content. Average nighttime differences between the products for the month periods of January 1999 and June 2000 are shown. These maps show complex spatial and temporal differences as indicated by the strong spatially coherent features in the product differences and the changes between seasons. Clearly such differences need to be understood and accounted for if the products are to be combined. The overall goals of this project are threefold: (1) To understand the sources of uncertainty in the IR and MW SST retrievals and to characterize the errors affecting the two types of retrieval as a fiction of atmospheric forcing; (2) To demonstrate how representative the temperature difference between the two satellite products is of Delta T; (3) To apply bias adjustments and to device a comprehensive treatment of the behavior of the temperature difference across the oceanic skin layer to determine the best method for blending thermal infrared and passive microwave measurements of SSTs.

Castro, Sandra L.↗