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Inflatable antenna technology is being developed by JPL/NASA to enable the capabilities of low mass, high packaging efficiency, and low-cost deployment for future spacecraft high-grain and large aperture antennas.
GeoSAR is a program sponsored by DARPA (Defence Advanced Research Projects Agency) and NASA (National Aeronautics and Space Administration) to develop and airborne, radar-based, commercial terrain mapping system for identification of geologic, seismic, and environmental information.
Inflatable structures have been identified as one of the enabling technologies to achieve low mass, high packaging efficiency, and reliable deployment for future NASA spaceborne synthetic aperture radar (SAR) array antennas.
A four-element, suspended patch antenna array that has a parasitic patch layer on top and is electromagnetically coupled to an inverted microstrip feed for linear polarization was demonstrated at K-band frequencies. The layout of the array is shown in the following figure. The antenna has the following advantages over conventional microstrip antennas: 1. The inverted microstrip has lower losses, which result in higher gain and efficiency. 2. The inverted microstrip is easier to fabricate, because the strip width is wider for a given characteristic impedance. 3. A conventional proximity-coupled patch antenna requires a substrate for the feed and a superstrate for the patch. However, the inverted microstrip-fed patch antenna makes use of a single substrate and, hence, is lightweight and inexpensive. 4. Electromagnetic coupling results in a wider bandwidth.
The upper part of the figure depicts an aperture-coupled L-band antenna comprising patterned metal conductor films supported on two thin polyimide membranes separated by an air gap. In this antenna, power is coupled from a microstrip line on the lower surface of the lower membrane, through a slot in a metal ground plane on the upper surface of the lower membrane, to a radiating metal patch on the upper surface of the upper membrane. The two-membrane configuration of this antenna stands in contrast to a three-membrane configuration heretofore considered as the basis for developing arrays of dual-polarization, wideband microwave antennas that could be thin and could be, variously, incorporated into, or supported on, thin structures, including inflatable structures. By reducing the number of membranes from three to two, the present design simplifies the problems of designing and fabricating such antennas or arrays of such antennas, including the problems of integrating such antennas or arrays with thin-membrane-mounted transmit/ receive modules. In addition, the use of aperture (slot) coupling eliminates the need for rigid coaxial feed pins and associated solder connections on thin membranes, making this antenna more mechanically reliable, relative to antennas that include coaxial feed pins. This antenna is designed for a nominal frequency of 1.26 GHz. The polyimide membranes are 0.05 mm thick and have a relative permittivity of 3.4. The radiating patch is square, 8.89 cm on each side. This radiating patch lies 1.27 cm above the ground plane. The feeding microstrip line is 0.12 mm wide and has a characteristic impedance of 50 . The aperture-coupling slot, etched in the ground plane, is 0.48 mm wide and 79.5 mm long. In order to maximize coupling, the microstrip line is extended beyond the middle of the slot by a length of 36 mm, which corresponds to a transmission- line electrical length of about a quarter wavelength. The other end of the microstrip line is transformed to a 50-Ohm coplanar waveguide line, which is used for connection to a transmit/receive module. Some plated-through vias are added to the outer conductors of the coplanar waveguide to suppress parallel-plate modes. The measured and calculated 10-dB-return-loss bandwidth of the antenna is 100 MHz. By eliminating the radiating patch and the upper membrane that supports it, and performing two other simple modifications, one can convert the two-membrane antenna described above to a paper-thin single-membrane antenna, shown in the lower part of the figure. One modification is to increase the slot length to 104.95 mm; the other is to extend the microstrip to 36.68 mm past the middle of the slot. With these modifications, the slot now becomes a half-wavelength radiator with a nearly omnidirectional radiation pattern. In one potential use, such a paper-thin antenna could be pasted on an automobile window to enable omnidirectional communication.
A multichannel dielectric-resonator oscillator (DRO), built as a prototype of a local oscillator for an X-band transmitter or receiver, is capable of being electrically tuned among and within 26 adjacent frequency channels, each 1.16 MHz wide, in a band ranging from 7,040 to 7,070 GHz. The tunability of this oscillator is what sets it apart from other DROs, making it possible to use mass-produced oscillator units of identical design in diverse X-band applications in which there are requirements to use different fixed frequencies or to switch among frequency channels. The oscillator (see figure) includes a custom-designed voltage-controlled-oscillator (VCO) monolithic microwave integrated circuit (MMIC), a dielectric resonator disk (puck), and two varactor-coupling circuits, all laid out on a 25-mil (0.635-mm)-thick alumina substrate having a length and width of 17.8 mm. The resonator disk has a diameter of 8.89 mm and a thickness of 4.01 mm. The oscillator is mounted in an 8.9-mm-deep cavity in a metal housing. The VCO MMIC incorporates a negative- resistance oscillator amplifier along with a buffer amplifier. The resonator disk is coupled to a microstrip transmission line connected to the negative-resistance port of the VCO MMIC. The two varactor-coupling circuits include microstrip lines, laid out orthogonally to each other, for coupling with the resonator disk. Each varactor microstrip line is DC-coupled to an external port via a microwave choke. One varactor is used for coarse tuning to select a channel; the other varactor is used (1) for fine tuning across the 1.16-MHz width of each channel and (2) as a feedback port for a phase-lock loop. The resonator disk is positioned to obtain (1) the most desirable bandwidth, (2) relatively tight coupling with the microstrip connected to the coarse-tuning varactor, and (3) relatively loose coupling with the microstrip connected to the fine-tuning varactor. Measurements of performance showed that the oscillator can be switched among any of the 26 channels and can be phase-locked to a nominal frequency in any channel. The degree of nonlinearity of tuning was found not to exceed 2.5 percent. The tuning sensitivity was found to be 6.15 MHz/V at a bias offset of -2 V on the phase-lock-loop varactor. The phase noise of the oscillator in free-running operation was found to be -107 dBc/Hz (where dBc signifies decibels relative to the carrier signal) at 100 kHz away from the carrier frequency.
An improved suspended-patch antenna has been designed to operate at a frequency of about 23 GHz with linear polarization and to be one of four identical antennas in a rectangular array. The antenna includes a parasitic patch on top of a suspended dielectric superstrate, an active patch on top of a suspended dielectric substrate, a microstrip on the bottom of the dielectric substrate, and a ground plane. The microstrip, the ground plane, the airgap between them, and the dielectric substrate together constitute a transmission line that has an impedance of 50 Ohm and is electromagnetically (EM) coupled to the active patch. The parasitic patch is, in turn, excited by the active patch. The microstrip feed is characterized as inverted because the microstrip is on the bottom of the substrate, whereas microstrips are usually placed on the tops of dielectric substrates
Microstrip patch antennas of a proposed type would be tunable over broad wavelength ranges. These antennas would be attractive for use in a variety of microwave communication systems in which there are requirements for transmission and/or reception at multiple, widely separated frequencies. Prior efforts to construct tunable microstrip patch antennas have involved integration of microstrip circuitry with, variously, ferrite films with magneticfield tuning, solid-state electronic tuning devices, or piezoelectric tuning actuators. Those efforts have been somewhat successful, but have yielded tuning ranges of 20 percent and smaller much smaller than needed in typical practical cases. Like prior microstrip patch antennas (both tunable and non-tunable), the proposed antennas would have instantaneous bandwidths of about 1 percent of their nominal or resonance frequencies. However, these would be tunable over much broader frequency ranges as much as several octaves, depending on specific designs. They could be fabricated relatively simply and inexpensively by use of conventional photolithography, and without need for integration with solid-state electronic or piezoelectric control devices. An antenna as proposed (see figure) would include a microstrip patch radiating element on a thin ferroelectric film on a semiconductor substrate with a ground-plane conductor on the underside of the substrate. The ferroelectric film could be, for example, SrTiO3 with a thickness of the order of 1 or 2 micrometers.
A NASA sponsored program, called the Mobile Satellite (MSAT) system, has prompted the development of several innovative antennas at L-band frequencies. In the space segment of the MSAT system, an efficient, light weight, circularly polarized microstrip array that uses linearly polarized elements was developed as a multiple beam reflector feed system. In the ground segment, a low-cost, low-profile, and very efficient microstrip Yagi array was developed as a medium-gain mechanically steered vehicle antenna. Circularly shaped microstrip patches excited at higher-order modes were also developed as low-gain vehicle antennas. A more recent effort called for the development of a 20/30 GHz mobile terminal antenna for future-generation mobile satellite communications. To combat the high insertion loss encountered at 20/30 GHz, series-fed Monolithic Microwave Integrated Circuit (MMIC) microstrip array antennas are currently being developed. These MMIC arrays may lead to the development of several small but high-gain Ka-band antennas for the Personal Access Satellite Service planned for the 2000s.
The Jet Propulsion Laboratory (JPL), under the sponsorship of NASA, has pioneered the development of land vehicle antennas for commercial mobile satellite communications. Several novel antennas have been developed at L-band frequencies for the Mobile Satellite (MSAT) program initiated about a decade ago. Currently, two types of antennas are being developed at K- and Ka-band frequencies for the ACTS (Advanced Communications Technology Satellite) Mobile Terminal (AMT) project. For the future, several hand-held antenna concepts are proposed for the small terminals of the Ka-band Personal Access Satellite System (PASS). For the L-band MSAT program, a number of omni-directional low-gain antennas, such as the crossed drooping-dipoles, the higher-order-mode circular microstrip patch, the quadrifilar helix, and the wrapped-around microstrip 'mast' array, have been developed for lower data rate communications. Several medium-gain satellite tracking antennas, such as the electronically scanned low-profile phased array, the mechanically steered tilted microstrip array, the mechanically steered low-profile microstrip Yagi array, and the hybrid electronically/mechanically steered low-profile array, have been developed for the MSAT's higher data rate and voice communications. To date, for the L-band vehicle application, JPL has developed the world's lowest-profile phased array (1.8 cm height), as well as the lowest-profile mechanically steered antenna (3.7 cm height). For the 20/30 GHz AMT project, a small mechanically steered elliptical reflector antenna with a gain of 23 dBi has recently been developed to transmit horizontal polarization at 30 GHz and receive vertical polarization at 20 GHz. Its hemispherical radome has a height of 10 cm and a base diameter of 23 cm. In addition to the reflector, a mechanically steered printed MMIC active array is currently being developed to achieve the same electrical requirements with a low profile capability. These AMT antenna developments, along with other Ka-band technologies, will lead to the development of several compact hand-held terminals for the PASS program. A few antenna concepts, such as the lap-top or desk-top terminal's printed array, the hand-held phased array, and the head-mounted low-profile array, have been proposed to achieve a future vision for the personal access communications system.
The parameters of a silicon - dielectric - metal microstrip line were compared with those of a metal - dielectric - metal microstrip line from an actual FLAPS antenna. The proposed structure has higher losses; this is caused by the electrical conductivity of the illuminated silicon electrode being lower than is the case with a line using a copper top electrode. However, the value of these conductive losses is on the same order as the radiative losses in the microstrip line used in FLAPS antenna. These results point to the feasibility of using the proposed type of a microstrip line in a light-controlled reconfigurable MMW antenna with reasonable energy losses and with a reasonable light flux.
Report describes design and low-temperature tests of low-noise GaAs microwave amplifier combined with microstrip band-pass filter. Two versions of microstrip filter used in alternate tests; in one version, microstrips formed as films of high-transition-temperature superconductor Y/Ba/Cu/O on lanthanum aluminate substrate with gold film as ground plane. Other version identical except microstrips as well as ground plane made of gold, normally conductive.
An improved broadband planar magic-T junction that incorporates microstrip/slotline transitions has been developed. In comparison with a prior broadband magic-T junction incorporating microstrip/slotline transitions, this junction offers superior broadband performance. In addition, because this junction is geometrically simpler and its performance is less affected by fabrication tolerances, the benefits of the improved design can be realized at lower fabrication cost. There are potential uses for junctions like this one in commercial microwave communication receivers, radar and polarimeter systems, and industrial microwave instrumentation. A magic-T junction is a four-port waveguide junction consisting of a combination of an H-type and an E-type junction. An E-type junction is so named because it includes a junction arm that extends from a main waveguide in the same direction as that of the electric (E) field in the waveguide. An H-type junction is so named because it includes a junction arm parallel to the magnetic (H) field in a main waveguide. A magic-T junction includes two input ports (here labeled 1 and 2, respectively) and two output ports (here labeled E and H, respectively). In an ideal case, (1) a magic-T junction is lossless, (2) the input signals add (that is, they combine in phase with each other) at port H, and (3) the input signals subtract (that is, they combine in opposite phase) at port E. The prior junction over which the present junction is an improvement affords in-phase-combining characterized by a broadband frequency response, and features a small slotline area to minimize in-band loss. However, with respect to isolation between ports 1 and 2 and return loss at port E, it exhibits narrowband frequency responses. In addition, its performance is sensitive to misalignment of microstrip and slotline components: this sensitivity is attributable to a limited number of quarter-wavelength (lambda/4) transmission-line sections for matching impedances among all four ports, and to strong parasitic couplings at the microstrip/slotline T junction, where four microstrip lines and a slotline are combined. The present improved broadband magic-T junction (see figure) includes a microstrip ring structure and two microstrip- to-slotline transitions. One of the microstrip/slotline transitions is a small T junction between the ring and a slotline; the other microstrip/slotline transition effects coupling between the slotline and port E. The smallness of the T junction and the use of minimum-size slotline terminations help to minimize radiation loss. An impedance-transformation network that includes multiple quarter-wavelength sections is used to increase the operating bandwidth and minimize the parasitic coupling around the microstrip/slotline T junction. As a result, the improved junction has greater bandwidth and lower phase imbalance at the sum and difference ports than did the prior junction.
A stripline-to-microstrip transition has been incorporated into a multilayer circuit board that supports a distributed solid-state microwave power amplifier, for the purpose of coupling the microwave signal from a buried-layer stripline to a top-layer microstrip. The design of the transition could be adapted to multilayer circuit boards in such products as cellular telephones (for connecting between circuit-board signal lines and antennas), transmitters for Earth/satellite communication systems, and computer mother boards (if processor speeds increase into the range of tens of gigahertz). The transition is designed to satisfy the following requirements in addition to the basic coupling requirement described above: (1) The transition must traverse multiple layers, including intermediate layers that contain DC circuitry. (2) The transition must work at a frequency of 32 GHz with low loss and low reflection. (3) The power delivered by the transition to top-layer microstrip must be split equally in opposite directions along the microstrip. Referring to the figure, this amounts to a requirement that when power is supplied to input port 1, equal amounts of power flow through output ports 2 and 3. (4) The signal-line via that is necessarily a part of such a transition must not be what is known in the art as a blind via; that is, it must span the entire thickness of the circuit board.
The figure shows one of four solid-state power amplifiers, each capable of generating an output power greater than or equal to 240 mW over one of four overlapping frequency bands from 71 to 106 GHz. (The bands are 71 to 84, 80 to 92, 88 to 99, and 89 to 106 GHz.) The amplifiers are designed for optimum performance at a temperature of 130 K. These amplifiers were developed specifically for incorporation into frequency-multiplier chains in local oscillators in a low-noise, far-infrared receiving instrument to be launched into outer space to make astrophysical observations. The designs of these amplifiers may also be of interest to designers and manufacturers of terrestrial W-band communication and radar systems. Each amplifier includes a set of six high-electron-mobility transistor (HEMT) GaAs monolithic microwave integrated-circuit (MMIC) chips, microstrip cavities, and other components packaged in a housing made from A-40 silicon-aluminum alloy. This alloy was chosen because, for the original intended spacecraft application, it offers an acceptable compromise among the partially competing requirements for high thermal conductivity, low mass, and low thermal expansion. Problems that were solved in designing the amplifiers included designing connectors and packages to fit the available space; designing microstrip signal-power splitters and combiners; matching of impedances across the frequency bands; matching of the electrical characteristics of those chips installed in parallel power-combining arms; control and levelling of output power across the bands; and designing the MMICs, microstrips, and microstrip cavities to suppress tendencies toward oscillation in several modes, both inside and outside the desired frequency bands.
A cryogenic 160-GHz MMIC heterodyne receiver module has demonstrated a system noise temperature of 100 K or less at 166 GHz. This module builds upon work previously described in Development of a 150-GHz MMIC Module Prototype for Large-Scale CMB Radiation (NPO-47664), NASA Tech Briefs, Vol. 35, No. 8 (August 2011), p. 27. In the original module, the local oscillator signal was saturating the MMIC low-noise amplifiers (LNAs) with power. In order to suppress the local oscillator signal from reaching the MMIC LNAs, the W-band (75 110 GHz) signal had to be filtered out before reaching 140 170 GHz. A bandpass filter was developed to cover 120 170 GHz, using microstrip parallel-coupled lines to achieve the desired filter bandwidth, and ensure that the unwanted W-band local oscillator signal would be sufficiently suppressed. With the new bandpass filter, the entire receiver can work over the 140 180-GHz band, with a minimum system noise temperature of 460 K at 166 GHz. The module was tested cryogenically at 20 K ambient temperature, and it was found that the receiver had a noise temperature of 100 K over an 8-GHz bandwidth. The receiver module now includes a microstrip bandpass filter, which was designed to have a 3-dB bandwidth of approximately 120-170 GHz. The filter was fabricated on a 3-mil-thick alumina substrate. The filter design was based on a W-band filter design made at JPL and used in the QUIET (Q/U Imaging ExperimenT) radiometer modules. The W-band filter was scaled for a new center frequency of 150 GHz, and the microstrip segments were changed accordingly. Also, to decrease the bandwidth of the resulting scaled design, the center gaps between the microstrip lines were increased (by four micrometers in length) compared to the gaps near the edges. The use of the 150-GHz bandpass filter has enabled the receiver module to function well at room temperature. The system noise temperature was measured to be less than 600 K (at room temperature) from 154 to 168 GHz. Additionally, the use of a W-band isolator between the receiver module and the local oscillator source also improved the noise temperature substantially. This may be because the mixer was presented with a better impedance match with the use of the isolator. Cryogenic testing indicates a system noise temperature of 100 K or less at 166 GHz. Prior tests of the MMIC amplifiers alone have resulted in a system noise temperature of 65.70 K in the same frequency range (.160 GHz) when cooled to an ambient temperature of 20 K. While other detector systems may be slightly more sensitive (such as SIS mixers), they require more cooling (to 4 K ambient) and are not as easily scalable to build a large array, due to the need for large magnets and other equipment. When cooled to 20 K, this receiver module achieves approximately 100 K system noise temperature, which is slightly higher than single-amplifier module results obtained at JPL (65.70 K when an amplifier is corrected for back-end noise contributions). If this performance can be realized in practice, and a scalable array can be produced, the impact on cosmic microwave background experiments, astronomical and Earth spectroscopy, interferometry, and radio astronomy in general will be dramatic.
The present invention relates to a symmetric absorber-coupled far-infrared microwave kinetic inductance detector including: a membrane having an absorber disposed thereon in a symmetric cross bar pattern; and a microstrip including a plurality of conductor microstrip lines disposed along all edges of the membrane, and separated from a ground plane by the membrane. The conducting microstrip lines are made from niobium, and the pattern is made from a superconducting material with a transition temperature below niobium, including one of aluminum, titanium nitride, or molybdenum nitride. The pattern is disposed on both a top and a bottom of the membrane, and creates a parallel-plate coupled transmission line on the membrane that acts as a half-wavelength resonator at readout frequencies. The parallel-plate coupled transmission line and the conductor microstrip lines form a stepped impedance resonator. The pattern provides identical power absorption for both horizontal and vertical polarization signals.
A via-less crossover for use in broadband microwave/mm-wave circuitry, including: a dielectric substrate; a top layer disposed on one side of the substrate and including a microstrip line with an input and an output, two tapered sections placed around the microstrip line along a co-planar waveguide (CPW) central line, one microstrip portion having an input and which connects to one top layer, rectangular stub disposed adjacent to one of the tapered sections, and another microstrip portion having an output and which connects to another top layer, rectangular stub disposed adjacent to the other of the tapered sections; and a ground layer disposed on an opposite side of the substrate and including a bottom layer CPW central line situated in a central cutout and which connects between a bottom layer, rectangular stub on one side and a bottom layer, rectangular stub on the other side situated in ground cutouts, respectively.