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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS2013

The DUV Stability of Superlattice-Doped CMOS Detector Arrays

In this paper, we present experimental results and band structure calculations that illuminate the unique properties of superlattice-doped detectors. Numerical band structure calculations are presented to analyze the dependencies of surface passivation on dopant profiles and interface trap densities (Figure 3). Experiments and calculations show that quantum-engineered surfaces, grown at JPL by low temperature molecular beam epitaxy, achieve a qualitative as well as quantitative uniqueness in their near-immunity to high densities of surface and interface traps.

doped silicon surfaces↗
DOE OSTI2020

The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers

The influence of doping of waveguide layers on the output characteristics of lasers based on AlGaAs/GaAs double separate-confinement heterostructures is analysed. The heterostructures with narrow and broadened waveguides are studied. Samples of laser diode bars with undoped and doped waveguide layers are experimentally fabricated and compared. It is shown that the latter type of structures with a broadened waveguide allows one to increase the output power of the laser diode bars by 10 % – 15 %, all other conditions being equal. (lasers. control of laser radiation parameters)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Erbium-implanted materials for quantum communication applications

Erbium-doped materials can serve as spin-photon interfaces with optical transitions in the telecom C band, making them an exciting class of materials for long-distance quantum communication. However, the spin and optical coherence times of Er 3+ ions are limited by currently available host materials, motivating the development of new Er 3+ -containing materials. Here we demonstrate the use of ion implantation to efficiently screen prospective host candidates, and show that disorder introduced by ion implantation can be mitigated through post-implantation thermal processing to achieve inhomogeneous linewidths comparable to bulk linewidths in as-grown samples. We present optical spectroscopy data for each host material, which allows us to determine the level structure of each site, allowing us to compare the environments of Er 3+ introduced via implantation and via doping during growth. Here, we demonstrate that implantation can generate a range of local environments for Er 3+ , including those observed in bulk-doped materials, and that the populations of these sites can be controlled with thermal processing.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2021

Optical coherence and energy-level properties of a Tm 3+ -doped LiNbO 3 waveguide at subKelvin temperatures

We characterize the optical coherence and energy-level properties of the 795-nm 3 H 6 to 3 H 4 transition of Tm 3+ in a Ti 4+ :LiNbO 3 waveguide at temperatures as low as 0.65 K. Coherence properties are measured with varied temperature, magnetic field, optical excitation power and wavelength, and measurement timescale. We also investigate nuclear spin-induced hyperfine structure and population dynamics with varying magnetic field and laser excitation power. Except for accountable differences due to different Ti 4+ - and Tm 3+ -doping concentrations, we find that the properties of Tm 3+ :Ti 4+ :LiNbO 3 produced by indiffusion doping are consistent with those of a bulk-doped Tm 3+ :LiNbO 3 crystal measured under similar conditions. Furthermore, our results, which complement previous work in a narrower parameter space, support using rare-earth ions for integrated optical and quantum signal processing.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2022

Synthesis and structure of carbon-doped H 3 S compounds at high pressure

Understanding of recently reported putative close-to-room-temperature superconductivity in C-S-H compounds at 267 GPa demands a reproducible synthesis protocol as well as knowledge of the compounds' structure and composition. Here, we synthesized C-S-H compounds with various carbon compositions at high pressures from elemental carbon C and methane CH 4 , sulfur S, and molecular hydrogen H 2 . Here, we focus on compounds synthesized using methane as these allow a straightforward determination of their structure and composition by combining single-crystal x-ray diffraction and Raman spectroscopy. We applied a two-stage synthesis of [(CH 4 ) x (H 2 S) (1-x) ] 2 H 2 compounds with various compositions by first reacting sulfur and mixed methane-hydrogen fluids and forming CH 4 -doped H 2 S crystals at 0.5-3 GPa and then by growing single crystals of the desired hydrogen-rich compound. Raman spectroscopy applied to this material shows the presence of CH 4 molecules incorporated into the lattice and allows the determination of the CH 4 content, while single-crystal x-ray diffraction results suggest that the methane molecules substitute H 2 S molecules. The structural behavior of these compounds is very similar to the previously investigated methane-free crystals demonstrating a transition from Al 2 Cu type I4/mcm molecular crystal to a modulated molecular structure at 20-30 GPa and back to the same basic I4/mcm structure in an extended modification with greatly modified Raman spectra. This latter phase demonstrates a distortion into a Pnma structure at 132-159 GPa and then transforms into a common Im$\bar{3}$m H 3 S phase at higher pressures; however, no structural anomaly is detected near 220 GPa, where a sharp upturn in T c has been reported.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Surface Doping Boosts Triplet Generation Yield in Perovskite-Sensitized Upconversion

Triplet–triplet annihilation-based photon upconversion (TTA-UC) can efficiently generate higher energy photons at low relative fluences. Bulk metal halide perovskites have offered promise in efficiently sensitizing molecular triplet states in the solid state, necessary for the integration of TTA-UC into device-based applications. Recent work focused on TTA-UC from a rubrene triplet annihilator sensitized by perovskite thin films has established relatively efficient charge extraction from the perovskite, forming the triplet exciton in rubrene. Yet, the specifics underpinning charge transfer at the perovskite/rubrene interface are not fully elucidated. Here, to improve device performance and study the properties governing charge transfer at the interface, various organic solvents are explored to treat the perovskite surface. Scanning tunneling microscopy and spectroscopy show a difference in the electronic band structure, where both n- and p-type terminated perovskite surfaces are observed depending on the solvent used. Supported by optical spectroscopy, the impact of the perovskite electronic structure is monitored, indicating that n-type perovskite sensitizers feature higher TTA-UC efficiencies due to favorable band bending resulting in efficient hole-mediated triplet formation. Overall, the tuning of the electronic structure of the perovskite sensitizer through solvent treatment is shown to be a key force in tuning the mechanism of efficient triplet generation.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Tuning 2D magnetism in Fe 3+X GeTe 2 films by element doping

Two-dimensional (2D) ferromagnetic materials have been discovered with tunable magnetism and orbital-driven nodal-line features. Controlling the 2D magnetism in exfoliated nanoflakes via electric/magnetic fields enables a boosted Curie temperature (T C ) or phase transitions. One of the challenges, however, is the realization of high T C 2D magnets that are tunable, robust and suitable for large scale fabrication. Here, we report molecular-beam epitaxy growth of wafer-scale Fe 3+X GeTe 2 films with T C above room temperature. By controlling the Fe composition in Fe 3+X GeTe 2 , a continuously modulated T C in a broad range of 185–320 K has been achieved. This widely tunable T C is attributed to the doped interlayer Fe that provides a 40% enhancement around the optimal composition X = 2. We further fabricated magnetic tunneling junction device arrays that exhibit clear tunneling signals. Our results show an effective and reliable approach, i.e. element doping, to producing robust and tunable ferromagnetism beyond room temperature in a large-scale 2D Fe 3+X GeTe 2 fashion.

2D ferromagnetic material↗
DOE OSTI2025

Synthesis and electronic characterization of Nd2−xSrxNiO4 thin films (0≤x≤1.4)

Layered nickelates have been studied extensively over the last three decades due to their structural similarities to the high-Tc superconducting cuprates. Using reactive oxide molecular beam epitaxy (MBE), we synthesize Nd2−xSrxNiO4 thin films for x=0−1.4 to probe the properties and electronic structure as a function of hole doping. The samples with lower doping show semiconducting behavior across the temperatures probed with an onset of metallic conductivity at x=1.4. We also present polarization-dependent O K and Ni L2,3 x-ray absorption spectra to track the evolution of the oxygen-nickel hybridization, distribution of holes between O 2p and Ni 3d states and the nickel oxidation state across the series. Angle-resolved photoemission spectroscopy (ARPES) measurements reveal a Fermi surface that comprises a cupratelike hole pocket of dx2−y2 character with an additional electron pocket of d3z2−r2 character at Γ. The emergence of a quasiparticle peak at the Fermi vector for x=1.4 corroborates the insulator-to-metal transition at x∼1. Finally, observe a fully two-dimensional Fermi surface with no momentum-dependent pseudogap, in contrast to measurements of the related bulk compound, Eu0.9Sr1.1NiO4.

Taylor, Nicole K↗
DOE OSTI2026

Intrinsic even-odd thickness-driven anomalous Hall effect in epitaxial MnBi2⁢Te4 thin films

We demonstrate precise control of magnetism in MnBi2⁢Te4 thin films through careful synthesis by molecular beam epitaxy, achieving minimal defects and accurate layer thickness control. By optimizing Mn-Bi-Te ratios and growth temperatures, we minimize detrimental self-doping effects and accurately target integer-layer films. X-ray diffraction and reflectivity provide quantitative measures of film quality and thickness. When these macroscale probes of structure and thickness are integrated with magnetotransport measurements, a striking even-odd layer dependence of the anomalous Hall effect is revealed. Odd-layer films exhibit a large hysteresis up to the Néel temperature (∼25K), consistent with noncompensated antiferromagnetism, while even-layer films show minimal response, as expected for an antiferromagnet. The sign of the anomalous Hall effect exhibits a sign reversal for intrinsic magnetism versus magnetism associated with defects. This work identifies critical factors for inducing pure, noncompensated ferromagnetism and reveals the characteristics of the intrinsic anomalous Hall effect in MnBi2⁢Te4, which together is a step toward realizing the zero-field quantum anomalous Hall effect in topological materials.

Mallick, Deb [ORNL] (ORCID:000900005806411X)↗
DOE OSTI2023

Hydration of a Side-Chain-Free n-Type Semiconducting Ladder Polymer Driven by Electrochemical Doping

Here, we study the organic electrochemical transistors (OECTs) performance of the ladder polymer, poly(benzimidazobenzophenanthroline) (BBL) in an attempt to better understand how an apparently hydrophobic side-chain-free polymer is able to operate as an OECT with favorable redox kinetics in an aqueous environment. We examine two BBLs of different molecular masses from different sources. Both BBLs show significant film swelling during the initial reduction step. By combining electrochemical quartz crystal microbalance (eQCM) gravimetry, in-operando atomic force microscopy (AFM), and both ex-situ and in-operando grazing incidence wide-angle x-ray scattering (GIWAXS), we provide a detailed structural picture of the electrochemical charge injection process in BBL in the absence of any hydrophilic side-chains. Compared with ex-situ measurements, inoperando GIWAXS shows both more swelling upon electrochemical doping than has previously been recognized, and less contraction upon dedoping. The data show that BBL films undergo an irreversible hydration driven by the initial electrochemical doping cycle with significant water retention and lamellar expansion that persists across subsequent oxidation/reduction cycles. This swelling creates a hydrophilic environment that facilitates the subsequent fast hydrated ion transport in the absence of the hydrophilic side-chains used in many other polymer systems. Due to its rigid ladder backbone and absence of hydrophilic side-chains, the primary BBL water uptake does not significantly degrade the crystalline order, and the original dehydrated, unswelled state can be recovered after drying. The combination of doping induced hydrophilicity and robust crystalline order leads to efficient ionic transport and good stability.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Optical and microstructural characterization of Er 3+ doped epitaxial cerium oxide on silicon

Rare-earth ion dopants in solid-state hosts are ideal candidates for quantum communication technologies, such as quantum memories, due to the intrinsic spin–photon interface of the rare-earth ion combined with the integration methods available in the solid state. Erbium-doped cerium oxide (Er:CeO 2 ) is a particularly promising host material platform for such a quantum memory, as it combines the telecom-wavelength (~ 1.5 μm) 4f–4f transition of erbium, a predicted long electron spin coherence time when embedded in CeO 2 , and a small lattice mismatch with silicon. In this work, we report on the epitaxial growth of Er:CeO 2 thin films on silicon using molecular beam epitaxy, with controlled erbium concentration between 2 and 130 parts per million (ppm). We carry out a detailed microstructural study to verify the CeO 2 host structure and characterize the spin and optical properties of the embedded Er 3+ ions as a function of doping density. In as-grown Er:CeO 2 in the 2–3 ppm regime, we identify an EPR linewidth of 245(1) MHz, an optical inhomogeneous linewidth of 9.5(2) GHz, an optical excited state lifetime of 3.5(1) ms, and a spectral diffusion-limited homogeneous linewidth as narrow as 4.8(3) MHz. We test the annealing of Er:CeO 2 films up to 900 °C, which yields narrowing of the inhomogeneous linewidth by 20% and extension of the excited state lifetime by 40%.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Formation of a Boron-Oxide Termination for the (100) Diamond Surface

A boron-oxide termination of the diamond (100) surface has been formed by depositing molecular boron oxide B 2 O 3 onto the hydrogen-terminated (100) diamond surface under ultrahigh vacuum conditions and annealing to 950 °C. The resulting termination is highly oriented and chemically homogeneous, although further optimization is required to increase the surface coverage beyond the 0.4 monolayer coverage achieved here. This work demonstrates the possibility of using molecular deposition under ultrahigh vacuum conditions for complex surface engineering of the diamond surface, and may be a first step in an alternative approach to fabricating boron doped delta layers in diamond.

36 MATERIALS SCIENCE↗
NASA NTRS1992

Microwave properties of peeled HEMT devices sapphire substrates

The focus of this research is to demonstrate the first full radio frequency characterization of high electron mobility transistor (HEMT) device parameters. The results of this research are used in the design of circuits with peeled HEMT devices, e.g. 10 GHz amplifiers. Devices were fabricated using two HEMT structures grown by molecular beam epitaxy methods. A 500 A AlAs release layer for 'peel off' was included under the active layers of the structure. The structures are a homogeneously doped Al(0.3)GA(0.7)As/GaAs and a delta doped square well Al(.23)Ga(.77)As/GaAs HEMT structure. Devices were fabricated using a mesa isolation process. Contacts were done by sequentially evaporating Au/Ge/Au/Ni/Au followed by rapid thermal anneal at 400 C for 15 seconds. Gates were wet etch recessed and 1 to 1.4 micron Ti/Au gate metal was deposited. Devices were peeled off the GaAs substrate using Apiezon wax to support the active layer and a HF:DI (1:10) solution to remove the AlAs separation layer. Devices were then attached to sapphire substrates using van der Waals bonding.

Young, Paul G.↗
NASA NTRS1994

Long-Wavelength Stacked SiGe/Si Heterojunction Internal Photoemission Infrared Detectors Using Multiple SiGe/Si Layers

Utilizing low temperature silicon molecular beam epitaxy (MBE) growth, long-wavelength stacked SiGe/Si heterojunction internal photoemission (HIP) infrared detectors with multiple SiGe/Si layers have been fabricated and demonstrated. Using an elemental boron source, high doping concentrations (approximately equal to 4 x 10(sup 20) cm(sup -3)) has been achieved and high crystalline quality multiple Si(sub 0.7)Ge(sub 0.3)/Si layers have been obtained. The detector structure consists of several periods of degenerately boron doped (approximately equal to 4 x 10(sup 20) cm(sup -3)) thin (less than or equal to 50 u Si(sub 0.7)Ge(sub 0.3) layers and undoped thick (approximately equal to 300u Si layers. The multiple p(sup +) - Si(sub 0.7)Ge(sub 0.3)/undoped-Si layers show strong infrared absorption in the long-wavelength regime mainly through free carrier absorption. The stacked Si(sub 0.7)Ge(sub 0.3)/Si HIP detectors with p = 4 x 10(sup 20) cm(sup -3) exhibit strong photoresponse at wavelengths ranging from 2 to 20 (micro)m with quantum efficiencies of about 4% and 1.5% at 10 and 15 (micro)m wavelengths, respectively. The detectors show near ideal thermionic-emission limited dark current characteristics.

beam epitaxy↗
DOE OSTI2021

Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO 2

Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials' limitations with regard to their doping asymmetry that impedes their adoption in CMOS technology. Improvements in the ambipolar doping of UWBG materials will enable a wider range of applications in power electronics as well as deep-UV optoelectronics. These advances can be accomplished through theoretical insights on the limitations of current UWBG materials coupled with the computational prediction and experimental demonstration of alternative UWBG semiconductor materials with improved doping and transport properties. As an example, we discuss the case of rutile GeO2 (r-GeO 2 ), a water-insoluble GeO 2 polytype, which is theoretically predicted to combine an ultra-wide gap with ambipolar dopability, high carrier mobilities, and a higher thermal conductivity than β-Ga 2 O 3 . The subsequent realization of single-crystalline r-GeO 2 thin films by molecular beam epitaxy provides the opportunity to realize r-GeO 2 for electronic applications. Future efforts toward the predictive discovery and design of new UWBG semiconductors include advances in first-principles theory and high-performance computing software, as well as the demonstration of controlled doping in high-quality thin films with lower dislocation densities and optimized film properties.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Phase Synergy Enables Low‐Power Ferroelectric Switching in HfO 2 Epitaxial Films

HfO 2 -based ferroelectric materials have emerged as leading candidates for next-generation non-volatile memory technologies, owing to their nanoscale robust ferroelectricity and complementary metal–oxide–semiconductor (CMOS) compatibility. However, challenges and debates persist in advancing and comprehensively understanding their ferroelectric behavior. In particular, conventional approaches typically regard non-ferroelectric phases as detrimental and primarily focus on suppressing their formation, yet overlooking their potentially synergistic contributions—particularly those of the tetragonal (T) phase. Here, we unambiguously clarify the beneficial role of the T-phase and introduce a phase-boundary engineering strategy that deliberately harnesses it to enhance ferroelectricity in HfO 2 films. By stabilizing optimal coherent boundaries between ferroelectric orthorhombic (O) and T phases in epitaxial La-doped HfO 2 films, we achieve significant improvements in ferroelectric properties—doubling the remanent polarization (P r ∼ 30 µC/cm 2 ) and substantially reducing the coercive field (E c ∼ 3 MV/cm) by 30% compared to low-La doped samples without such boundaries. Atomic-scale electron microscopy reveals the structural nature of the atomically sharp, coherent O–T boundaries. Combined with deep-learning enhanced molecular dynamics simulations, our results unravel that these boundaries facilitate intermediate polarization states that lower the switching energy barrier. Consequently, phase coexistence shifts from an inherent drawback to a tunable design element, offering a broadly applicable route to ultra-low-power HfO 2 -based nanoelectronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1991

Advanced Si IR detectors using molecular beam epitaxy

SiGe/Si heterojunction internal photoemission (HIP) long wavelength infrared (LWIR) detectors have been fabricated by MBE. The SiGe/Si HIP detector offers a tailorable spectral response in the long wavelength infrared regime by varying the SiGe/Si heterojunction barrier. Degenerately doped p(+) SiGe layers were grown using elemental boron, as the dopant source allows a low growth temperature. Good crystalline quality was achieved for boron-doped SiGe due to the reduced growth temperature. The dark current density of the boron-doped HIP detectors was found to be thermionic emission limited. HIP detectors with a 0.066 eV were fabricated and characterized using activation energy analysis, corresponding to a 18 micron cutoff wavelength. Photoresponse of the detectors at wavelengths ranging from 2 to 12 microns has been characterized with corresponding quantum efficiencies of 5 - 0.1 percent.

Lin, T. L.↗
NASA NTRS1997

Elucidation of Free Radical and Optogalvanic Spectroscopy Associated with Microgravity Combustion via Conventional and Novel Laser Platforms

Combustion studies under both normal gravity and microgravity conditions depend a great deal on the availability and quality of the diagnostic systems used for such investigations. Microgravity phenomena are specially susceptible to even small perturbations and therefore non-intrusive diagnostic techniques are of paramount importance for successful understanding of reduced-gravity combustion phenomena. Several non-intrusive diagnostic techniques are available for probing and delineating normal as well as reduced gravity combustion processes, such as Rayleigh scattering, Raman scattering, Mie scattering, velocimetry, interferometric and Schlieren techniques, emission and laser-induced fluorescence (LIF) spectroscopy. Our approach is to use the LIF technique as a non-intrusive diagnostic tool for the study of combustion-associated free radicals and use the concomitant optogalvanic transitions to accomplish precise calibration of the laser wavelengths used for recording the excitation spectra of transient molecular species. In attempting to perform spectroscopic measurements on chemical intermediates, we have used conventional laser sources as well as new and novel platforms employing rare-earth doped solid-state lasers. Conventional (commercially available) sources of tunable UV laser radiation are extremely cumbersome and energy-consuming devices that are not very suitable for either in-space or in-flight (or microgravity drop tower) experiments. Traditional LIF sources of tunable UV laser radiation involve in addition to a pump laser (usually a Nd:YAG laser with an attached frequency-doubling stage), a tunable dye laser. In turn, the dye laser has to be provided with a dye circulation system and a subsequent stage for frequency-doubling of the dye laser radiation, together with a servo-tuning system (termed the 'Autotracker') to follow the wavelength changes and also an optical system (called the 'Frequency Separator') for separation of the emanating visible and UV beams. In contrast to this approach, we have devised an alternate arrangement for recording LIF excitation spectra of free radicals (following appropriate precursor fragmentation) that utilizes a tunable rare-earth doped solid state laser system with direct UV pumping. We have designed a compact and portable tunable UV laser system incorporating features necessary for both in-space and in-flight spectroscopy experiments. For the purpose of LIF excitation, we have developed an all-solid-state tunable UV laser that employs direct pumping of the solid-state UV-active medium employing UV harmonics from a Nd:YAG laser. An optical scheme with counterpropagating photolysis and excitation beams focused by suitable lenses into a reaction vacuum chamber was employed.

Misra, Prabhakar↗