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At least 289 records · Page 16

Fabricating and using a micromachined magnetostatic relay or switch

A micromachined magnetostatic relay or switch includes a springing beam on which a magnetic actuation plate is formed. The springing beam also includes an electrically conductive contact. In the presence of a magnetic field, the magnetic material causes the springing beam to bend, moving the electrically conductive contact either toward or away from another contact, and thus creating either an electrical short-circuit or an electrical open-circuit. The switch is fabricated from silicon substrates and is particularly useful in forming a MEMs commutation and control circuit for a miniaturized DC motor.

Tai, Yu-Chong↗

Dust Abrasion Damage on Martian Solar Arrays: Experimental Investigation and Opportunity Rover Performance Analysis

Here we investigate the effects of erosion and weathering that occur on III-V cover-glass interconnected cells (CICs) after exposure to Mars dust storm conditions. The durability of these materials in a Martian environment is not well characterized so we perform analogous experimentation. To replicate the dust impingement, test coupons were placed in an enclosure and sandblasted with Mars dust simulant. We show the J-V response dependency on both incident angle and exposure times. We find that the simulated Martian dust storm often results in damage to the anti-reflective coating and subsequent reduced short circuit current. Reduction in the open circuit voltage is observed, likely caused by structural damage to the crystal lattice after CIC fracture. We employ data-driven modeling to determine a performance degradation rate that is consistent with zero within uncertainty. We also quantify the soiling contribution and power degradation of the photovoltaic cells on Mars through analysis of 4.95 Martian years of report-out power conditions from the Opportunity rover. We find that atmospheric dust suspended due to a weather event does not result in instantaneous settled dust on the PV cells. We calculate via autocorrelation function that the dust settling rate is approximately 21 Sols from atmospheric dust suspension. The findings presented here deliver a realistic approximation for the insolation values and subsequent PV power expected over time on the Martian surface thus informing future dust abatement systems.

McMillon-Brown, Lyndsey↗

Dust Abrasion Damage on Martian Solar Arrays: Experimental Investigation and Opportunity Rover Performance Analysis

Here we investigate the effects of erosion and weathering that occur on III-V cover-glass interconnected cells (CICs) after exposure to Mars dust storm conditions. The durability of these materials in a Martian environment is not well characterized so we perform analogous experimentation. To replicate the dust impingement, test coupons were placed in an enclosure and sandblasted with Mars dust simulant. We show the J-V response dependency on both incident angle and exposure times. We find that the simulated Martian dust storm often results in damage to the anti-reflective coating and subsequent reduced short circuit current. Reduction in the open circuit voltage is observed, likely caused by structural damage to the crystal lattice after CIC fracture. We employ data-driven modeling to determine a performance degradation rate that is consistent with zero within uncertainty. We also quantify the soiling contribution and power degradation of the photovoltaic cells on Mars through analysis of 4.95 Martian years of report-out power conditions from the Opportunity rover. We find that atmospheric dust suspended due to a weather event does not result in instantaneous settled dust on the PV cells. We calculate via autocorrelation function that the dust settling rate is approximately 21 Sols from atmospheric dust suspension. The findings presented here deliver a realistic approximation for the insolation values and subsequent PV power expected over time on the Martian surface thus informing future dust abatement systems.

McMillon-Brown, Lyndsey↗

Cumulative Distribution of Ballistic Impact Failures of Common Twisted-Pair Data Cables at Orbital Speeds

Data wire cable runs are a significant presence on the exterior of the International Space Station (ISS), and continued ISS mission support requires detailed assessment of cables due to micrometeoroid and orbit debris (MMOD) impact. These data wire cables are twisted-pair cables consisting of two 22AWG stranded conductors and fillers inside a tight fitting braided copper shield. The copper shield and its contents are covered with a jacket that has a nominal outer diameter of 3.76 mm and beta-cloth tape. The ISS engineering community has identified two loss-of-function mechanisms for these cables: open circuits due to severed conductors within the cable, and short circuits due to contact between conductors or grounded components. As these data cables are low power systems, short circuits are not expected to burn away the contact, so both open and short circuits are considered permanent loss-of-function for the cable. A total of ninety-seven impact experiments have been performed into these cables to develop a statistical model for the failure of these cables to be used in reliability studies. The experimental work has yielded cumulative distribution functions for these cables for steel and aluminum components of the orbital debris environment at representative speeds and impact obliquities.

Miller, Joshua E.↗

In‐Silico Device Performance Prediction of Cosensitizer Dye Pairs for Dye‐Sensitized Solar Cells

Abstract Endeavors in the field of dye‐sensitized solar cells (DSCs) have shown great promise when adopting a data‐driven approach to materials discovery, such as successful molecular‐scale predictions of light‐harvesting chromophores. However, predictions of DSC dyes would become much more sophisticated if a molecular‐to‐macroscopic DSC device prediction methodology existed. Thereby, a fully computational pipeline is presented that predicts device‐performance parameters of DSCs which contain varying dye combinations. Optimal pairing of complementary dyes is identified via a data‐driven workflow that affords cosensitized DSCs with maximum power‐conversion efficiencies. Six high‐performing DSC dyes are paired with partner dyes that are screened from a database of 8488 compounds using sequential heuristic filters. Existing models that predict short‐circuit‐current density ( J SC ) and open‐circuit voltage ( V OC ) parameters are adapted to predict singly sensitized and cosensitized DSC performance. The predictions for J sc values of singly sensitized devices match experimental literature values with comparable accuracy to more computationally costly methods. Five out of six dye pairings are predicted to have greater J SC values when cosensitized compared to their corresponding singly sensitized devices, including two pairs that show strong J sc boosts of +13% and +12% when cosensitized. Thus, the prospect of an entirely in‐silico prediction pipeline for DSC performance that can be used to realize the fully automated design of optimized cosensitized DSCs is demonstrated.

14 SOLAR ENERGY↗

InGaSb Defect Filter Layer to Improve Performance of GaSb Solar Cells Grown on GaAs Substrates

The reduction of the threading dislocation density in metamorphic GaSb grown on GaAs substrates through the use of InGaSb defect filter layers has been investigated. More specifically, we study the effects of strain and thickness on the ability of a InGaSb defect filter layer to reduce threading dislocations in GaSb solar cells grown on GaAs substrates. The strain between the GaSb metamorphic layer on GaAs substrate (99.5% relaxed) and the InGaSb defect filter layer is varied by changing the indium composition in the InGaSb layer. Here, it is demonstrated that an InGaSb defect filter layer with 0.6% strain is more effective for blocking threading dislocations compared with higher-strain layers, resulting in improved short-circuit current (J sc ) and open-circuit voltage (V oc ) for the metamorphic GaSb solar cell. The optimization of the defect filter layer involves varying the thickness of the layer to achieve the lowest possible threading dislocation density. This also takes into account the critical thickness of the InGaSb layer on GaSb to avoid generation of threading dislocations from the InGaSb layer itself. It is shown that adding an In 0.11 Ga 0.89 Sb defect filter layer with thickness of 250 nm and 0.6% strain beneath a GaSb solar cell grown on a GaAs substrate improves V oc from 0.1 V to 0.16 V and J sc from 19.7 mA/cm 2 to 24.7 mA/cm 2 .

36 MATERIALS SCIENCE↗

Advanced Photovoltaic Module Characterization: Using Image Transformers for Current–Voltage Curve Prediction From Electroluminescence Images

Individual photovoltaic (PV) module health monitoring can be a daunting task for operation and maintenance of solar farms. Modules can be inspected through luminescence, thermal imaging, and current–voltage (I–V) curve analyzes for identification of damage and power loss. I–V curves provide easily interpretable data to determine module health as they directly provide electrical performance metrics. However, in order to obtain these curves, modules must be disconnected from the array and either removed to a solar simulator or characterized in situ with corrections for module temperature, the incident solar spectrum, and intensity. Luminescence or thermal images of a module are relatively easy to acquire in situ. Electroluminescence (EL) images highlight physical defects in the modules but do not provide easily interpretable features to correlate with electrical performance. This work presents a SWin transformer network to predict I–V curves for PV modules from their corresponding EL images. The predicted I–V curves allow the accurate prediction of the maximum power point (MPP), short-circuit current I sc , and open-circuit voltage V oc with a mean error less of than 1%. Comparing single diode model (SDM) parameters extracted from the predicted curves to those extracted from the true curves, the series resistance R s demonstrates a mean error of 5.19%, and the photocurrent I a mean error of 0.197%. The shunt resistance R sh and dark current Io parameters are predicted with larger errors because of their sensitivity to small changes in the I–V curve.

Byford, Brandon K. [New Mexico State Univ., Las Cr↗

Operating manual: Fast response solar array simulator

The fast response solar array simulator (FRSAS) is a universal solar array simulator which features an AC response identical to that of a real array over a large range of DC operating points. In addition, short circuit current (I sub sc) and open circuit voltage (V sub oc) are digitally programmable over a wide range for use not only in simulating a wide range of array sizes, but also to simulate (I sub sc) and (V sub oc) variations with illumination and temperature. A means for simulation of current variations due to spinning is available. Provisions for remote control and monitoring, automatic failure sensing and warning, and a load simulator are also included.

Vonhatten, R.↗

Backside damage-gettering in cast polycrystalline silicon

The technique of backside-damage gettering improves the performance of short minority-carrier diffusion length, large-grain (grain diameter greater than 1 to 2 mm), cast polycrystalline silicon. On average, increases of nearly 20 percent in short-circuit current, 10 mV in open-circuit voltage, and 15 percent in peak-power were obtained by heat-treating 300 micron thick polycrystalline wafers at 1000 C in flowing nitrogen for 5 hours. Additional measurements of the bulk and space-charge recombination current components indicate that this improvement results from a significant increase in the minority-carrier diffusion length due to gettering of impurities from the bulk.

Culik, J.↗

Channelized coplanar waveguide: Discontinuities, junctions, and propagation characteristics

A new variant of CPW which has been termed channelized CPW, CCPW, is presented. Measured and computed propagation characteristics are presented. Lumped equivalent circuit element values for a CCPW open circuit and right angle bend have been obtained. CCPW power divider junctions and a coax-to-CCPW in-phase, radial power divider are also presented.

Simons, Rainee N.↗

Y-Type Non-Fullerene Acceptors with Outer Branched Side Chains and Inner Cyclohexane Side Chains for 19.36% Efficiency Polymer Solar Cells

Raising the lowest unoccupied molecular orbital (LUMO) energy level of Y-type non-fullerene acceptors can increase the open-circuit voltage (V oc ) and thus the photovoltaic performance of the current top performing polymer solar cells (PSCs). One of the viable routes is demonstrated by the successful Y6 derivative of L8-BO with the branched alkyl chains at the outer side. This will introduce steric hindrance and reduce intermolecular aggregation, thus open up the bandgap and raise the LUMO energy level. To take further advantages of the steric hindrance influence on optoelectronic properties of Y6 derivatives, two Y-type non-fullerene acceptors of BTP-Cy-4F and BTP-Cy-4Cl are designed and synthesized by adopting outer branched side chains and inner cyclohexane side chains. An outstanding V oc of 0.937 V is achieved in the D18:BTP-Cy-4F binary blend devices along with a power conversion efficiency (PCE) of 18.52%. With the addition of BTP-eC9 to extend the absorption spectral coverage, a remarkable PCE of 19.36% is realized finally in the related ternary blend devices, which is one of the highest values for single-junction PSCs at present. The results illustrate the great potential of cyclohexane side chains in constructing high-performance non-fullerene acceptors and their PSCs.

36 MATERIALS SCIENCE↗

Simultaneously improved J sc and V oc achieving 19.15% efficiency in ternary blend polymer solar cell containing a Y-type acceptor with thiophene based end groups

Simultaneously enhancing the short-circuit current density (J sc ) and open-circuit voltage (V oc ) of current state-of-the-art polymer solar cells (PSCs) containing wide bandgap polymers as donors and Y6 derivatives as acceptors is of great challenge but essential for further improvement of the photovoltaic performances. Here, in this work, two Y-type non-fullerene acceptors of BTP-T and BTP-TCl were designed and successfully synthesized with relatively weak electron-accepting thiophene based end groups, where blue-shifted absorption and upshifted LUMO energy levels were achieved to fill the well-known absorption gap at 700 nm of typical binary devices based Y-type molecules and rise the output voltage, respectively. Simultaneously increased J sc and V oc were achieved in ternary blend devices containing D18:BTP-eC9:BTP-TCl with a significantly improved PCE up to 19.15 %, which is over 7 % increase compared to the binary device. Our results illustrated the great potential of rational design of Y6 derivatives for constructing ternary PSCs to improve their performances.

36 MATERIALS SCIENCE↗

Bulk photovoltaic effect in hexagonal LuMnO 3 single crystals

Hexagonal manganites, such as h-LuMnO 3 , are ferroelectric and have a narrow electronic band gap of ≈1.5eV. Here we report on the photoresponse of h-LuMnO 3 single crystals. It is found that the short circuit photocurrent density (J sc ) and the open circuit voltage (V oc ) are dependent on the direction of the polarization plane of a linearly polarized impinging light. Its angular dependence indicates the contribution of bulk photovoltaic effect to the short circuit photocurrent (J BPE ). It is also observed that a switchable drift photocurrent, originating from the depoling field of the ferroelectric and thus tunable(<10%) by its polarization direction, also contributes to J sc . Although its presence precludes accurate determination of the bulk photovoltaic tensor elements and Glass coefficients, some bounds can be established. The Glass coefficients are found to be significantly larger than those obtained in BiFeO 3 . We argue that the smaller band gap of h-LuMnO 3 , its distinctive bipyramidal crystal field, and electronic configuration (3d 4 vs 3d 5 ), account for the difference and suggest a path towards ferroelectrics of higher photoconversion efficiency.

14 SOLAR ENERGY↗

Impulse commutating circuit with transformer to limit reapplied voltage

Silicon controlled rectifier opens circuit with currents flowing up to values of 30 amperes. Switching concept halves both current and voltage in middle of commutating cycle thereby lowering size and weight requirements. Commutating circuit can be turned on or off by command and will remain on in absence of load due to continuous gate.

Mcconville, J. H.↗

A review of the thermoelectronic laser energy converter (TELEC) program at Lewis Research Center

The investigation of the Thermoelectronic Laser Energy Converter (TELEC) concept began with a feasibility study of a 1 megawatt sized TELEC system. The TELEC was to use either cesium vapor or hydrogen as the plasma medium. The cesium vapor TELEC appears to be the more practical device studied with an overall calculated conversion efficiency of greater than 48%. Following this study, a small TELEC cell was fabricated which demonstrated the conversion of a small amount of laser power to electrical power. The cell developed a short circuit current of 0.7 amperes and an open circuit voltage, as extrapolated from volt-ampere curves, of about 1.5 volts.

Alger, D. L.↗

A review of the Thermoelectronic Laser Energy Converter /TELEC/ Program at Lewis Research Center

The investigation of the Thermoelectronic Laser Energy Converter (TELEC) concept at the Lewis Research Center (LeRC) began with a feasibility study of a 1 megawatt sized TELEC system. The TELEC was to use either cesium vapor or hydrogen as the plasma medium. The cesium vapor TELEC appears to be the more practical device studied with an overall calculated conversion efficiency of greater than 48%. Following this study, a small TELEC cell was fabricated which demonstrated the conversion of a small amount of laser power to electrical power. The cell developed a short circuit current of 0.7 amperes and an open circuit voltage, as extrapolated from volt-ampere curves, of about 1.5 volts. Work is now in progress to construct and test a cesium vapor TELEC capable of absorbing 20% of an incident 10 kW, 10.6 micrometer beam, and converting 35% of this power to electrical power.

Alger, D. L.↗

P/N In(Al) GaAs Multijunction Laser Power Converters

Eight In(Al)GaAs P/N junctions grown epitaxially on a semi-insulating wafer were monolithically integrated in series to boost the approx. 0.4 V photovoltage per typical In(Al)GaAs junction to over 3 volts for the 1 sq cm laser power converter (LPC) chip. This is the first report of a multijunction LPC for the 1.3 to 1.5 microns wavelength range. This wavelength range is optimum for laser power transmission over low- loss single-mode silica optical fiber, and is also useful with high efficiency 1.315 microns iodine lasers in free-space power transmission. Advantages of multijunction LPC designs include the need for less circuitry for power reconditioning and the potential for lower I(exp 2)R power loss. As an example, these LPCs have a responsivity of approx.1 amp/watt. With a single junction LPC, 100 watts/sq cm incident power would lead to about 100 A/sq cM short-circuit current at approx. 0.4 V open-circuit voltage. One disadvantage is the large current would lead to a large 1(exp 2)R loss which would lower the fill factor so that 40 wattS/sq cm output would not be obtained. Another is that few circuits are designed to work at 0.4 volts, so DC-DC power conversion circuitry would be necessary to raise the voltage to a reasonable level. The multijunction LPC being developed in this program is a step toward solving these problems. In the above example, an eight-junction LPC would have eight times the voltage, approx. 3 V, so that DC-DC power conversion may not be needed in many instances. In addition, the multijunction LPC would have 1/8 the current of a single-junction LPC, for only 1/64 the 1(exp 2)R loss if the series resistance is the same. Working monolithic multijunction laser power converters (LPCs) were made in two different compositions of the ln(x)Al(y)Ga(l-x-y)As semiconductor alloy, In(0.53)Ga(0.47)As (0.74 eV) and In(0.5)Al(0.1)Ga(0.4)As (0.87 eV). The final 0.8 sq cm LPCs had output voltages of about 3 volts and output currents up to about one-half amp. Maximum 1.3 microns power conversion efficiencies were approx. 22%. One key advantage of multijunction LPCs is that they have higher output voltages, so that less DC-DC power conversion circuitry is needed in applications.

Wojtczuk, Steven↗

Highly Efficient Ternary Solar Cells with Efficient Förster Resonance Energy Transfer for Simultaneously Enhanced Photovoltaic Parameters

Introducing a third component into organic bulk heterojunction solar cells has become an effective strategy to improve photovoltaic performance. Meanwhile, the rapid development of non-fullerene acceptors (NFAs) has pushed the power conversion efficiency (PCE) of organic solar cells (OSCs) to a higher standard. In this study, a series of fullerene-free ternary solar cells are fabricated based on a wide bandgap acceptor, IDTT-M, together with a wide bandgap donor polymer PM6 and a narrow bandgap NFA Y6. Insights from the morphological and electronic characterizations reveal that IDTT-M has been incorporated into Y6 domains without disrupting its molecular packing and sacrificing its electron mobility and work synergistically with Y6 to regulate the packing pattern of PM6, leading to enhanced hole mobility and suppressed recombination. IDTT-M further functions as an energy-level mediator that increases open-circuit voltage ( V OC ) in ternary devices. In addition, efficient Förster resonance energy transfer (FRET) between IDTT-M and Y6 provides a non-radiative pathway for facilitating exciton dissociation and charge collection. As a result, the optimized ternary device features a significantly improved PCE up to 16.63% with simultaneously enhanced short-circuit current ( J SC ), V OC , and fill factor (FF).

36 MATERIALS SCIENCE↗