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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Low Cost High-Performance HRE-Free 3-in-1 Electric Drive Unit

The project team completed work to expand upon American Axle & Manufacturing’s (AAM) baseline technology and develop a high-speed, AC induction electric drive unit (EDU) with total direct-oil-cooling and integrated power electronics. The project accelerated advancements in EDU technology by allowing AAM to build upon the progress made in developing the underlying baseline technologies. The following seven improvements to AAM’s baseline technology were implemented in this research and development program: 1) Increased speed (30k RPM) AC induction motor, 2) Silver-sintering of discrete silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFET) to heat sinks, 3) Electrically insulated rotor bars, 4) Optimized lamination steel, 5) EDU-integrated 650VDC inverter package, 6) Over-molded stator with molded liners, and 7) 650VDC power-dense stator design. The successful development of the technology resulted in a meaningful cost reduction for EDU systems in the market. Coupled with falling battery system costs, lower EDU costs will likely accelerate the market acceptance and related production scaling of battery electric vehicles. The objective of this project was to research, develop, and test a Heavy Rare Earth (HRE)-free 3-In-1 electric drive unit (EDU) that has class leading power density and cost. The key technologies to be developed were anticipated to meet or exceed the Department of Energy (DOE) targets of a cost ≤ $\$$7/kilowatt (kW), power density ≥ 12 kW/liter, and operating voltage ≥ 600 VDC.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2025

I-V curve analysis of single-nanoparticle Al-doped SrTiO 3

Strontium Titanate (SrTiO 3 or STO) is an oxide-semiconductor material which shows promise for photocatalytic water splitting, but remains poorly understood. To better understand its carrier dynamics, STO nanoparticles deposited onto an Au substrate were placed inside of a Scanning Electron Microscope (SEM) and then contacted with an Au probe. Current-voltage (I-V) measurements were taken with and without electron beam illumination. Fitting to the curves, we estimate the doping density ($N_D \approx 10^{22.1 \pm 1.2}$ cm$^{-3}$) and built-in potential ($\phi_{bi} \approx 0.84 \pm 0.45$ eV). We then used these I-V measurements to estimate the diffusion time ($\tau$) of our samples and observed an exponential dependence of $\tau$ on sample size in the range of 350-550 nm.

36 MATERIALS SCIENCE↗
DOE OSTI2025

PID-Regulated Heating System for PIP-II Reference Line

The Proton Improvement Plan 2 (PIP-II) centers on building a new superconducting linear particle accelerator (Linac) at Fermilab. At the heart of the accelerator is the reference line. It is a critical system that defines the ideal path for the beam as it passes through magnets, RF cavities, and other beamline elements. Temperature stability is crucial for the reliable operation of RF components, such as mixers and filters. Fluctuations affect key performance parameters like conversion loss, isolation, and linearity. To mitigate any drift caused by ambient temperature changes, a heating plate assembly is utilized to maintain key components at a controlled temperature of 40 C. Utilizing an actively regulated heating system, a metal-oxide-semiconductor field-effect transistor (MOSFET) based power control circuit which provides input to a controller; forming a closed-loop system that maintains the desired setpoints with high precision.

Mosher, Alexander [U. Illinois, Chicago]↗
DOE OSTI2023

Ultrafast CMOS image sensors and data-enabled super-resolution for multimodal radiographic imaging and tomography

We summarize recent progress in ultrafast Complementary Metal Oxide Semiconductor (CMOS) image sensor development and the application of neural networks for post-processing of CMOS and charge-coupled device (CCD) image data to achieve sub-pixel resolution (thus ‘super-resolution’). The combination of novel CMOS pixel designs and data-enabled image post-processing provides a promising path towards ultrafast high-resolution multi-modal radiographic imaging and tomography applications.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Overview of CMOS Sensors for Future Tracking Detectors

Depleted Complementary Metal-Oxide-Semiconductor (CMOS) sensors are emerging as one of the main candidate technologies for future tracking detectors in high luminosity colliders. Their capability of integrating the sensing diode into the CMOS wafer hosting the front-end electronics allows for reduced noise and higher signal sensitivity, due to the direct collection of the sensor signal by the readout electronics. They are suitable for high radiation environments due to the possibility of applying high depletion voltage and the availability of relatively high resistivity substrates. The use of a CMOS commercial fabrication process leads to their cost reduction and allows faster construction of large area detectors. In this contribution, a general perspective of the state of the art of CMOS detectors for High Energy Physics experiments is given. The main developments carried out with regard to these devices in the framework of the CERN RD50 collaboration are summarized.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis

The channel conduction in 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even though nitridation reduces the interface trap density, scattering still plays a crucial role in increasing the channel resistance in these transistors. In this work, the dominant scattering mechanisms are distinguished for inversion layer electrons and holes using temperature and body-bias-dependent Hall measurements on nitrided lateral 4H-SiC MOSFETs. The effect of the transverse electric field (E eƒƒ ) on carrier mobility is analyzed under strong inversion condition where surface roughness scattering becomes prevalent. Power law dependencies of the electron and hole Hall mobility for surface roughness scattering are determined to be E$^{-1.8}_{eƒƒ}$ and E$^{-2.4}_{eƒƒ}$, respectively, analogous to those of silicon MOSFETs. Moreover, for n-channel MOSFETs, the effect of phonon scattering is observed at zero body bias, whereas in p-channel MOSFETs, it is observed only under negative body biases. Along with the identification of regimes governed by different scattering mechanisms, these results highlight the importance of the selection of substrate doping and of E eƒƒ in controlling the value of channel mobility in 4H-SiC MOSFETs.

36 MATERIALS SCIENCE↗
DOE OSTI2020

PbE (E = S, Se) Colloidal Quantum Dot-Layered 2D Material Hybrid Photodetectors

Hybrid lead chalcogenide (PbE) (E = S, Se) quantum dot (QD)-layered 2D systems are an emerging class of photodetectors with unique potential to expand the range of current technologies and easily integrate into current complementary metal-oxide-semiconductor (CMOS)-compatible architectures. Herein, we review recent advancements in hybrid PbE QD-layered 2D photodetectors and place them in the context of key findings from studies of charge transport in layered 2D materials and QD films that provide lessons to be applied to the hybrid system. Photodetectors utilizing a range of layered 2D materials including graphene and transition metal dichalcogenides sensitized with PbE QDs in various device architectures are presented. Figures of merit such as responsivity (R) and detectivity (D*) are reviewed for a multitude of devices in order to compare detector performance. Finally, a look to the future considers possible avenues for future device development, including potential new materials and device treatment/fabrication options.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Towards prevention and prediction of infectious diseases with virus sterilization using ultraviolet light and low-temperature plasma and bio-sensing devices for health and hygiene care

Inspired by the ideas of many authors, we provide insight on state-of-the-art potential technologies for the prevention and prediction of infectious diseases before they spread. This review also surveys virus sterilization with ultraviolet light and low temperature plasma technologies. Researchers in the various fields of medicine, materials, electronics, and plasma sciences have addressed increasingly challenging demands and the discussion encompasses the major challenges in societies that are faced with the threat of infectious diseases. In addition, technologies that use nanomaterials are evaluated for infection prevention and hygiene purposes. Advances in biomedical diagnostics for health care in terms of complementary metal-oxide-semiconductor transistors-based devices and telemetry for health monitoring are also reviewed.

60 APPLIED LIFE SCIENCES↗
NASA NTRS1966

MOSFET analog memory circuit achieves long duration signal storage

Memory circuit maintains the signal voltage at the output of an analog signal amplifier when the input signal is interrupted or removed. The circuit uses MOSFET /Metal Oxide Semiconductor Field Effect Transistor/ devices as voltage-controlled switches, triggered by an external voltage-sensing device.

Source record↗
NASA NTRS1968

Engineering Mechanics Division

Screening methods for metal oxide semiconductor field effect transistors and resistors, impact survival testing of spacecraft electronic parts, and parachute jettisoning from planetary capsules

Source record↗
NASA NTRS1969

Read-only Memories Final Report

Integrated, metal oxide semiconductor memories with nonvolatile and electrically programmable characteristics

Cricchi, J. R.↗
NASA NTRS1970

Solid state switch provides high input-to-output isolation

Switch uses a combination of N-channel and P-channel Metal Oxide Semiconductor Field Effect Transistors /MOSFET/ to obtain a normally open switch with no power applied. Series-shunt-series MOSFET switching achieves high input-output isolation.

Magee, R. L.↗