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At least 289 records · Page 16

A Chip-Scale Oscillation-Mode Optomechanical Inertial Sensor Near the Thermodynamical Limits

Modern navigation systems integrate the global positioning system (GPS) with an inertial navigation system (INS), which complement each other for correct attitude and velocity determination. Here, the core of the INS integrates accelerometers and gyroscopes used to measure forces and angular rate in the vehicular inertial reference frame. With the help of gyroscopes and by integrating the acceleration to compute velocity and distance, precision and compact accelerometers with sufficient accuracy can provide small–error location determination. Solid–state implementations, through coherent readout, can provide a platform for high performance acceleration detection. In contrast to prior accelerometers using piezoelectric or capacitive readout techniques, optical readout provides narrow–linewidth high–sensitivity laser detection along with low–noise resonant optomechanical transduction near the thermodynamical limits. Here an optomechanical inertial sensor with an 8.2 µg Hz –1/2 velocity random walk (VRW) at an acquisition rate of 100 Hz and 50.9 µg bias instability is demonstrated, suitable for applications, such as, inertial navigation, inclination sensing, platform stabilization, and/or wearable device motion detection. Driven into optomechanical sustained–oscillation, the slot photonic crystal cavity provides radio–frequency readout of the optically–driven transduction with an enhanced 625 µg Hz –1 sensitivity. Measuring the optomechanically–stiffened oscillation shift, instead of the optical transmission shift, provides a 220× VRW enhancement over pre–oscillation mode detection.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Doping-driven topological polaritons in graphene/$\alpha$-MoO 3 heterostructures

Control over charge carrier density provides an efficient way to trigger phase transitions and modulate the optoelectronic properties of materials. This approach can also be used to induce topological transitions in the optical response of photonic systems. Here we report a topological transition in the isofrequency dispersion contours of hybrid polaritons supported by a two-dimensional heterostructure consisting of graphene and α-phase molybdenum trioxide. By chemically changing the doping level of graphene, we observed that the topology of polariton isofrequency surfaces transforms from open to closed shapes as a result of doping-dependent polariton hybridization. Moreover, when the substrate was changed, the dispersion contour became dominated by flat profiles at the topological transition, thus supporting tunable diffractionless polariton propagation and providing local control over the optical contour topology. We achieved subwavelength focusing of polaritons down to 4.8% of the free-space light wavelength by using a 1.5-μm-wide silica substrate as an in-plane lens. Our findings could lead to on-chip applications in nanoimaging, optical sensing and manipulation of energy transfer at the nanoscale.

36 MATERIALS SCIENCE↗

Direct electron beam patterning of electro-optically active PEDOT:PSS

The optical and electronic tunability of the conductive polymer poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) has enabled emerging applications as diverse as bioelectronics, flexible electronics, and micro- and nano-photonics. High-resolution spatial patterning of PEDOT:PSS opens up opportunities for novel active devices in a range of fields. However, typical lithographic processes require tedious indirect patterning and dry etch processes, while solution-processing methods such as ink-jet printing have limited spatial resolution. Here, we report a method for direct write nano-patterning of commercially available PEDOT:PSS through electron-beam induced solubility modulation. The written structures are water stable and maintain the conductivity as well as electrochemical and optical properties of PEDOT:PSS, highlighting the broad utility of our method. We demonstrate the potential of our strategy by preparing prototypical nano-wire structures with feature sizes down to 250 nm, an order of magnitude finer than previously reported direct write methods, opening the possibility of writing chip-scale microelectronic and optical devices. We finally use the high-resolution writing capabilities to fabricate electrically-switchable optical diffraction gratings. We show active switching in this archetypal system with >95 % contrast at CMOS-compatible voltages of +2 V and -3 V, offering a route towards highly-miniaturized dynamic optoelectronic devices.

42 ENGINEERING↗

High resolution decoding of Multi-Anode Microchannel Array detectors

The Multi-Anode Microchannel Array (MAMA) is a photon counting detector which utilizes a photocathode for photon to electron conversion, a microchannel plate (MCP) for signal amplification and a proximity focused anode array for position sensitivity. The detector electronics decode the position of an event through coincidence discrimination. The decoding algorithm which associates a given event with the appropriate pixel is determined by the geometry of the array. A new algorithm incorporated into a CMOS Application Specific Integrated Circuit (ASIC) decoder which improves the pixel spatial resolution is described. The new algorithm does not degrade the detector throughput and does not require any modifications to the detector tube. The standard MAMA detector has a pixel size of 25 x 25 square microns, but with the new decoder circuit the pixel size is reduced to 12.5 x 12.5 square microns. We have built the first set of decode electronics utilizing the new ASIC chips and report here on the first imaging tests of this system.

Kasle, David B.↗

Frequency combs in optically injected terahertz ring quantum cascade lasers

Quantum cascade lasers (QCLs) have emerged as promising candidates for generating chip-scale frequency combs in mid-infrared and terahertz wavelengths. In this work, we demonstrate frequency comb formation in ring terahertz QCLs using the injection of light from a distributed feedback (DFB) laser. The DFB design frequency is chosen to match the modes of the ring cavity (near 3.3 THz), and light from the DFB is injected into the ring QCL via a bus waveguide. By controlling the power and frequency of the optical injection, we show that combs can be selectively formed and controlled in the ring cavity. Numerical modeling suggests that this comb is primarily frequency-modulated in character, with the injection serving to trigger comb formation. We also show that the ring can be used as a filter to control the output of the DFB QCL, potentially being of interest in terahertz photonic integrated circuits. Our work demonstrates that waveguide couplers are a compelling approach for injecting and extracting radiation from ring terahertz combs and offer exciting possibilities for the generation of new comb states in terahertz, such as frequency-modulated waves, solitons, and more.

47 OTHER INSTRUMENTATION↗

Silicon Nanosheets as Candidates for Silicon-Based Optoelectronics

The growth in computational ability over the past decades has positively impacted global development, the economy, healthcare, and science. As on-chip components are approaching the atomic scale, alternative paradigms are needed to address the thermal and electronic issues that impose bottlenecks for computing. One approach to address this is with optoelectronics. However, silicon—the backbone of microelectronics—is a poor choice due to its indirect bandgap, while existing optoelectronic materials are incompatible with CMOS infrastructure. Monolayer silicon nanosheets (SiNSs) are an intriguing material that exhibit photoluminescence, and are compositionally-compatible with the CMOS process. Here, we synthesize and characterize monolayer SiNSs, and show spectroscopic evidence that they exhibit a quasi-direct bandgap, which is corroborated by DFT calculations. We probe their thermal stability, demonstrating their structure and photoluminescence are stable beyond the required operating temperatures for computing applications. These optoelectronic properties, CMOS-compatibility, and stability make SiNSs a viable candidate for silicon-based photonics.

Ryan, Bradley↗

NASA Tech Briefs, September 2010

Topics covered include: Instrument for Measuring Thermal Conductivity of Materials at Low Temperatures; Multi-Axis Accelerometer Calibration System; Pupil Alignment Measuring Technique and Alignment Reference for Instruments or Optical Systems; Autonomous System for Monitoring the Integrity of Composite Fan Housings; A Safe, Self-Calibrating, Wireless System for Measuring Volume of Any Fuel at Non-Horizontal Orientation; Adaptation of the Camera Link Interface for Flight-Instrument Applications; High-Performance CCSDS Encapsulation Service Implementation in FPGA; High-Performance CCSDS AOS Protocol Implementation in FPGA; Advanced Flip Chips in Extreme Temperature Environments; Diffuse-Illumination Systems for Growing Plants; Microwave Plasma Hydrogen Recovery System; Producing Hydrogen by Plasma Pyrolysis of Methane; Self-Deployable Membrane Structures; Reactivation of a Tin-Oxide-Containing Catalys; Functionalization of Single-Wall Carbon Nanotubes by Photo-Oxidation; Miniature Piezoelectric Macro-Mass Balance; Acoustic Liner for Turbomachinery Applications; Metering Gas Strut for Separating Rocket Stages; Large-Flow-Area Flow-Selective Liquid/Gas Separator; Counterflowing Jet Subsystem Design; Water Tank with Capillary Air/Liquid Separation; True Shear Parallel Plate Viscometer; Focusing Diffraction Grating Element with Aberration Control; Universal Millimeter-Wave Radar Front End; Mode Selection for a Single-Frequency Fiber Laser; Qualification and Selection of Flight Diode Lasers for Space Applications; Plenoptic Imager for Automated Surface Navigation; Maglev Facility for Simulating Variable Gravity; Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection; High-Speed Operation of Interband Cascade Lasers; 3D GeoWall Analysis System for Shuttle External Tank Foreign Object Debris Events; Charge-Spot Model for Electrostatic Forces in Simulation of Fine Particulates; Hidden Statistics Approach to Quantum Simulations; Reconstituted Three-Dimensional Interactive Imaging; Determining Atmospheric-Density Profile of Titan; Digital Microfluidics Sample Analyzer; Radiation Protection Using Carbon Nanotube Derivatives; Process to Selectively Distinguish Viable from Non-Viable Bacterial Cells; and TEAMS Model Analyzer.

Source record↗

Background Count Rates and the Anti-Coincidence Detector on the Instrument on Astro-E2

Minimum ionizing particles incident on the XRS microcalorimeter array will deposit energy in the pixels on the same scale as an x-ray photon and would be confused with x-rays without an anti-coincidence detector. The XRS anti-coincidence detector is a silicon ionization detector placed directly behind the calorimeter array. Given an isotropic particle flux, 98% of those particles that pass through a calorimeter pixel will also deposit energy in the anti-coincidence detector. Particle events that are not rejected by coincidence are those that pass through at small angles relative to the plane of the array, and thus deposit more energy. Modeling with GEANT4 showed that only 0.1% of all protons incident on the array miss the anti-coincidence detector yet deposit less than 10 keV in a pixel. The unrejected background will thus be dominated by secondary events; we will provide an estimate of this rate. Protons incident on the thick silicon frame around the active area of the array deposit enough energy t o heat the whole chip slightly. This results in small simultaneous pulses on multiple pixels. These can be easily rejected by pixel-to-pixel coincidence. We will discuss the impact of these events on the instrument dead time and will present the expected rate. We will present laboratory background data demonstrating the performance of the anti-coincidence detector and the effectiveness of coincidence analysis in the laboratory environment.

Kilbourne, C. A.↗

On-chip non-Hermitian optical parametric amplifiers with a large bandwidth

Recently, our groups have introduced the notion of optical parametric amplification based on non-Hermitian phase matching wherein the incorporation of loss can lead to gain in this nonlinear optical process. Previous simulation results using second-order nonlinear optical coupled-mode theory have demonstrated the potential of this technique as an alternative to the stringent phase-matching condition, which is often difficult to achieve in semiconductor platforms. Here we fortify this notion for the case of third-order nonlinearity by considering parametric amplification in silicon nanowires and illustrate the feasibility of these devices by employing rigorous finite-difference time-domain analysis using realistic materials and geometric parameters. Particularly, we demonstrate that by systematic control of the optical loss of the idler in a four-wave mixing process, we can achieve efficient unidirectional energy conversion from the pump to the signal component even when the typical phase-matching condition is violated. Importantly, our simulations show that a signal gain of ∼ <#comment/> 9 d B for a waveguide length of a few millimeters is possible over a large bandwidth of several hundreds of nanometers ( ∼ <#comment/> 600 n m ). This bandwidth is nearly 2 orders of magnitude larger than what can be achieved in the conventional silicon-photonics-based four-wave mixing process.

Ahmed, Asif (ORCID:0000000152234392)↗

Ultra-high extinction ratio polarization beam splitter with extreme skin-depth waveguide

In this Letter, we present a high extinction ratio and compact on-chip polarization beam splitter (PBS), based on an extreme skin-depth (eskid) waveguide. Subwavelength-scale gratings form an effectively anisotropic metamaterial cladding and introduce a large birefringence. The anisotropic dielectric perturbation of the metamaterial cladding suppresses the TE polarization extinction via exceptional coupling, while the large birefringence efficiently cross-couples the TM mode, thus reducing the coupling length. We demonstrated the eskid-PBS on a silicon-on-insulator platform and achieved an ultra-high extinction ratio PBS ( ≈ <#comment/> 60 d B for TE and ≈ <#comment/> 48 d B for TM) with a compact coupling length ( ≈ <#comment/> 14.5 µ <#comment/> m ). The insertion loss is also negligible ( < <#comment/> 0.6 d B ). The bandwidth is > <#comment/> 80 (30) nm for the TE (TM) extinction ratio > <#comment/> 20 d B . Our ultra-high extinction ratio PBS is crucial in implementing efficient polarization diversity circuits, especially where a high degree of polarization distinguishability is necessary, such as photonic quantum information processing.

Ahmed, Syed Z.↗

Lasing from Finite Plasmonic Nanoparticle Lattices

Small lasers can generate coherent light for integrated photonics, in-vivo cellular imaging, and solid-state lighting. Unlike conventional lasers, plasmonic lasers can generate coherent light at sub-wavelength scales, although cavity architectures based on metal films and semiconducting gain exhibit large radiative losses and lack directional emission. In contrast, two-dimensional (2D) metal nanoparticle arrays surrounded by organic dyes can support lasing with high directionality at room temperature. Yet, the relationship between the number of nanoparticles in a finite lattice and their lasing emission characteristics is unknown. Here we show that the number of units in 2D gold nanoparticle lattices is critical to generate robust cavity resonances and lasing emission. Narrower lattice plasmons associated with stronger electromagnetic near fields are observed as nanoparticle number increases. Experimentally, we demonstrate lasing from a 30x30 nanoparticle lattice. Semi-quantum modeling indicates lower lasing thresholds and faster population inversion dynamics with higher nanoparticle numbers. These findings indicate that finite lattices of nanoparticles integrated with gain can function as independent, coherent light sources for optical multiplexing and lab-on-a-chip applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Ultra broadband yellow emitting lead-free metal halide perovskite like compounds with near-unity emission quantum yields

Metal halide perovskites (MHPs) are interesting semiconductor materials with potential for use in optoelectronic and photonic devices. Their practical applications are hindered due to the negative environmental effects of the lead ions (Pb 2+ ) used in these materials and stability issues. Exploring new environmentally friendly materials with lead-free metal halides and investigating the factors affecting their optical properties and stability are essential. The broadband emission and high (near-unity; ~100%) photoluminescence quantum yield (PLQY) of low-dimensional copper(I) halides make them great candidates for the next-generation luminescent materials for lighting applications. Here, a Cu(I) iodide based organic/inorganic hybrid halide (benzo-15-crown-5) 2 NaH 2 OCu 4 I 6 (BCNCI) with a zero-dimensional (0D) cluster was prepared. The BCNCI has a broadband yellow emission peaked at 548 nm with a near-unity PLQY (99.1%) upon excitation at 365 nm (ultraviolet). Upon excitation at 450 nm (blue), a high PLQY of 82% was also achieved. The luminescence mechanism was discussed in detail. Interestingly, BCNCI exhibits ultra-broad band excitation in the 300–500 nm range, which matches commercially available UV and blue-emitting chips. Compared to commercial YAG:Ce 3+ phosphors, the emission spectrum is sufficiently broad to cover the visible spectral region. This work illustrates a good example of developing an environmentally friendly white light source, using high-performance copper halides with adequate broadband excitation and emission.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Integrated reference cavity with dual-mode optical thermometry for frequency correction

Photonic integrated resonators have advantages over traditional benchtop cavities in terms of size, weight, and cost with the potential to enable applications that require spectrally pure light. However, integrated resonators suffer from temperature-dependent frequency variations and are sensitive to external environmental perturbations, which hinders their usage in precision frequency applications. One solution is to use interrogation of the cavity temperature through dual-mode optical thermometry (DMOT) by measuring the shift of the resonance frequency difference between two polarization or optical frequency modes. Yet this approach has only been demonstrated in bulk-optic whispering gallery mode and fiber resonators. In this paper, we implement dual-mode optical thermometry in an ultra-high Q integrated silicon nitride resonator. A dual-mode resonance frequency difference temperature sensitivity of 188 ± <#comment/> 15 M H z / K is measured. We demonstrate feedforward DMOT frequency correction that, under an applied external temperature ramp, is able to reduce the optical frequency change to 0.31 kHz/s as compared to an uncorrected 10.03 kHz/s, a factor of 30 × <#comment/> reduction. These results show promise for on-chip frequency correction solutions for quantum, metrology, atomic, and coherent optical communications applications.

Zhao, Qiancheng (ORCID:0000000206968667)↗

All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity

Silicon is the most scalable optoelectronic material but has suffered from its inability to generate directly and efficiently classical or quantum light on-chip. Scaling and integration are the most fundamental challenges facing quantum science and technology. We report an all-silicon quantum light source based on a single atomic emissive center embedded in a silicon-based nanophotonic cavity. We observe a more than 30-fold enhancement of luminescence, a near-unity atom-cavity coupling efficiency, and an 8-fold acceleration of the emission from the all-silicon quantum emissive center. Our work opens immediate avenues for large-scale integrated cavity quantum electrodynamics and quantum light-matter interfaces with applications in quantum communication and networking, sensing, imaging, and computing.

36 MATERIALS SCIENCE↗

Additional Trials & Tribulations in Synthesizing a Sulfide Standard

Well-characterized sulfide reference materials that can serve as matrix-matched calibrants for in-situ trace element analyses via laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) remain elusive. Here, we describe the creation an in-house sulfide standard at NASA JSC that will be used to measure siderophile and chalcophile trace elements in low pressure experimental products, specifically pentlandite ([FeNi]9S8) and pyrrhotite ([FeNi]1-xS), as well as natural sulfides in terrestrial and meteoritic mineral assemblages. Recent methods in creating a homogenous sulfide standard include pressed pellets, synthesized chips, or fused glass [e.g. 1-3]. Other studies, however, have had success in forming homogenous FeS standards via synthesization methods [e.g. 4-6]. We present a variation of the method described in [4], in which we create a pyrrhotite standard doped with a variety of trace elements (Zn, As, Se, Mo, Ru, Rh, Pd, Sn, Sb, Te, W, Os, Ir, Pt, Au) at ~10-40 ppm and Cu at ~200 ppm. Sulfide compositions were constructed using Fe and Ni metal and elemental sulfur powders. Trace elements were added to elemental sulfur from Atomic Absorption Spectroscopy (AAS) elemental standards as either nitrate or chloride solutions to prevent oxidation of the metal powders. The dried sulfur mixture was mixed with Fe and Ni powders and mechanically mixed before two aliquots were placed in separate SiO2 tubes. Each tube was held under vacuum for ~30 minutes, sealed under vacuum, and then heated at 800C for 48 hours. Like [4], the synthesis products were composed of pourous sulfide crystals. Major element analyses of both experimental aliquots, collected using an Electron Probe Microanalyser (EPMA), yield indistinguishable major element compositions (uncertainties in 2SE & 2RSE[%]), with an average of 57.90  0.09 (0.16 %), 4.95  0.03 (0.55 %), and 39.70  0.14 (0.34 %), for Fe, Ni, and S, respectively. Trace element data were measured using a Photon Machines 193nm laser ablation system coupled to a Thermo-Scientific Element-XR ICP-MS. Spot sizes were limited to 50 μm due to the porous nature of the sulfide target material. Trace element abundances, normalized to Fe as an internal standard, were also found to be homogenous between the two aliquots, with weighted mean 2RSE (%) values of <3.0 for all trace elements. Synthesized products were re-powdered and absolute concentrations measured via solution ICP-MS. Although the sulfide appears to be homogenous, sintering experiments will be performed to more closely match the standard density to natural sulfides and minimize differences in ablation behavior. Improved density also allows for higher sensitivity (i.e. more compact target material) and larger spot sizes or traverses, as void space is eliminated. Additional major and trace element analyses on the products of the sintering experiments will be undertaken.

Jacob B Setera↗

Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x 10(exp 4) cm(sup -1) for photon energies above 0.2 eV. CrSi2 is of potential utility for detection at photon energies above approximately 0.3 eV.

Mahan, John E.↗

First results from a multiplexed and massive instrument with sub-electron noise Skipper-CCDs

Here, we present a new instrument composed of a large number of sub-electron noise Skipper-CCDs operated with a two stage analog multiplexed readout scheme suitable for scaling to thousands of channels. New, thick, 1.35 Mpix sensors, from a new foundry, are glued into a Multi-Chip Module (MCM) printed circuit board on a ceramic substrate which has 16 sensors each. The instrument, that can hold up-to 16 MCMs, a total of 256 Skipper-CCD sensors (called a Super-Module with ≈ 130 grams of active mass and 346 Mpix), is part of the R&D effort of the OSCURA experiment which will have ≈ 94 super-modules. Experimental results with 10 MCMs and 160 Skipper-CCDs sensors are presented in this paper. This is already the largest ever built instrument with single electron sensitivity CCDs using nondestructive readout, both, in terms of active mass and number of channels.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Strain-concentration for fast, compact photonic modulation and non-volatile memory

A critical figure of merit (FoM) for electro-optic (EO) modulators is the transmission change per voltage, d T / d V . Conventional approaches in wave-guided modulators maximize d T / d V via a high EO coefficient or longer light-material interaction lengths but are ultimately limited by material losses and nonlinearities. Optical and RF resonances improve d T / d V at the cost of spectral non-uniformity, especially for high- Q optical cavity resonances. Here, we introduce an EO modulator based on piezo-strain-concentration of a photonic crystal cavity to address both trade-offs: (i) it eliminates the trade-off between d T / d V and waveguide loss—i.e., enhancement of the resonance tuning efficiency d v c / d V for the fixed EO coefficient, waveguide length, and cavity Q —and (ii) at high DC strains it exhibits a non-volatile (NV) cavity tuning Δ v c ,NV for passive memory and programming of multiple devices into resonance despite fabrication variations. The device is fabricated on a scalable silicon nitride-on-aluminum nitride platform. We measure d v c / d V =177±1MHz/V, corresponding to Δ v c =40±0.32GHz for a voltage spanning ±120V with an energy consumption of δ U /Δ v c =0.17nW/GHz. The modulation bandwidth is flat up to ω BW,3dB /2 π =3.2±0.07MHz for broadband DC-AC and 142±17MHz for resonant operation near a 2.8 GHz mechanical resonance. Optical extinction up to 25 dB is obtained via Fano-type interference. Strain-induced beam-buckling modes are programmable under a “read-write” protocol with a continuous, repeatable tuning range of 5±0.25GHz, allowing for storage and retrieval, which we quantify with mutual information of 2.4 bits and a maximum non-volatile excursion of 8 GHz. Using a full piezo-optical finite-element-model (FEM) we identify key design principles for optimizing strain-based modulators and chart a path towards achieving performance comparable to lithium niobate-based modulators and the study of high strain physics on-chip.

Wen, Y. Henry (ORCID:0009000685423628)↗