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At least 289 records · Page 16

Characterization of Digital Silicon Photomultipliers

Digital Silicon photomultipliers (Digital SiPMs) have become an increasingly viable option for single-photon detection due to their compact size and precise timing and resolution. The following work characterizes the noise performance of a diSiPM designed and tested in-house at Fermilab. The SiPM consists of a 26x32 array of single-photon avalanche diode (SPAD) cells. Through the implementation of a shift register masking circuit, individual SPAD cells can be enabled and disabled at will, allowing for precise detection measurements of single columns (accumulator channels) and cells. The provided circuit design operates on voltage clock pulses and collects data on clock edges allowing for precise tuning of the data collection process by varying the clock frequency, pulse width, and integration period.

Shoemaker, Oliver [U. Chicago (main)]↗

Using Cosmic Ray Muons to Assess Geological Characteristics in the Subsurface

Cosmic rays are energetic nuclei and elementary particles that originate from stars and intergalactic events. The interaction of these particles with the upper atmosphere produces a wide range of secondary particles that reach the surface of the earth, of which muons are the most prominent. With enough energy, muons can travel up to a few kilometers beneath the surface of the earth before being stopped completely. The terrestrial muon flux profile and associated zenith angle can be utilized to determine geological characteristics of a location (e.g., rock overburden and density) without having to use conventional methods such as boreholes. This work uses a low-power plastic scintillator-based muon detection system as a prototype for this non-destructive geological assay methodology. Four custom designed 102 cm x 51 cm x 5 cm plastic scintillation panels are used to realize two orthogonal detection planes. Optical photons from each scintillation panel are read using OnSemi J-Series 4x4 silicon photomultiplier (SiPM) arrays in conjunction with preamplifiers. Simultaneous triggers between detectors from two planes indicate a coincidence event which is recorded using the QuarkNet data acquisition system (DAQ) from Fermi National Accelerator Laboratory. A custom detector holder was designed to securely mount the detection system and rotate the panels along the zenith to collect data at variable angles. In order to quantify the systematic uncertainties associated with the detector, such as energy depositions and angular resolution of the detector design, a Monte Carlo (MC) simulation using Geant4 is being developed. Cosmic ray flux prediction will be included in the project by adding the CORSIKA MC code to the simulation toolchain. Simulated and experimental data will drive the development and validation of a reconstruction algorithm that, upon completion, is expected to predict average overburden and rock density. Extended detector exposure to muons can be used as a means to understand changes in the surrounding environment like rock porosity. On the experimental front, muons will initially be measured at the surface, establishing the baseline flux. This is followed by recording the muon flux at variable depths and zenith angles, where the data will be used by the reconstruction algorithm to predict the overburden. The result will be benchmarked against geological surveys. The measured flux data will also be used to benchmark independent and established models. Successful proof-of-concept demonstration of this technology can open doors for long term non-invasive geological monitoring. The detector design, experimental methodology, and the benchmarking efforts are detailed in this work.

Gadey, Harish Reddy↗

Modular chip-integrated photonic control of artificial atoms in diamond waveguides

A central goal in creating long-distance quantum networks and distributed quantum computing is the development of interconnected and individually controlled qubit nodes. Atom-like emitters in diamond have emerged as a leading system for optically networked quantum memories, motivating the development of visible-spectrum, multi-channel photonic integrated circuit (PIC) systems for scalable atom control. However, it has remained an open challenge to realize optical programmability with a qubit layer that can achieve high optical detection probability over many optical channels. Here, we address this problem by introducing a modular architecture of piezoelectrically actuated atom-control PICs (APICs) and artificial atoms embedded in diamond nanostructures designed for high-efficiency free-space collection. The high-speed four-channel APIC is based on a splitting tree mesh with triple-phase shifter Mach–Zehnder interferometers. This design simultaneously achieves optically broadband operation at visible wavelengths, high-fidelity switching (>40dB) at low voltages, submicrosecond modulation timescales (>30MHz), and minimal channel-to-channel crosstalk for repeatable optical pulse carving. Via a reconfigurable free-space interconnect, we use the APIC to address single silicon vacancy color centers in individual diamond waveguides with inverse tapered couplers, achieving efficient single photon detection probabilities (∼15%) and second-order autocorrelation measurements g (2) (0)<0.14 for all channels. The modularity of this distributed APIC–quantum memory system simplifies the quantum control problem, potentially enabling further scaling to thousands of channels.

47 OTHER INSTRUMENTATION↗

Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform

Two-dimensional (2D) materials are promising candidates for future electronics due to their excellent electrical and photonic properties. Although promising results on the wafer-scale synthesis (≤150 mm diameter) of monolayer molybdenum disulfide (MoS 2 ) have already been reported, the high-quality synthesis of 2D materials on wafers of 200 mm or larger, which are typically used in commercial silicon foundries, remains difficult. The back-end-of-line (BEOL) integration of directly grown 2D materials on silicon complementary metal–oxide–semiconductor (CMOS) circuits is also unavailable due to the high thermal budget required, which far exceeds the limits of silicon BEOL integration (<400 °C). This high temperature forces the use of challenging transfer processes, which tend to introduce defects and contamination to both the 2D materials and the BEOL circuits. Here we report a low-thermal-budget synthesis method (growth temperature < 300 °C, growth time ≤ 60 min) for monolayer MoS 2 films, which enables the 2D material to be synthesized at a temperature below the precursor decomposition temperature and grown directly on silicon CMOS circuits without requiring any transfer process. We designed a metal–organic chemical vapour deposition reactor to separate the low-temperature growth region from the high-temperature chalcogenide-precursor-decomposition region. We obtain monolayer MoS 2 with electrical uniformity on 200 mm wafers, as well as a high material quality with an electron mobility of ~35.9 cm 2 V -1 s -1 . Finally, we demonstrate a silicon-CMOS-compatible BEOL fabrication process flow for MoS 2 transistors; the performance of these silicon devices shows negligible degradation (current variation < 0.5%, threshold voltage shift < 20 mV). We believe that this is an important step towards monolithic 3D integration for future electronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Mechanical Design Guidelines to Inhibit Fracture in Perovskite Solar Cells

Perovskite (PVSK) solar cells offer significant benefits over conventional silicon cells including low-cost solution processibility, minimal materials usage related to strong photon absorption in thin-film cell architectures, and a tunable bandgap. However, PVSK films are mechanically fragile, and fracture of PVSK layers and adjacent interfaces are a significant concern during fabrication, encapsulation, and operation. Herein, a thin-film mechanics fracture analysis tailored for p–i–n and n–i–p PVSK solar cells on both soda lime glass and polyimide substrates fabricated with three PVSK crystallization methods is presented. Here, the role of thermal processing of each cell layer is explored to determine the maximum allowable temperature below which fracture is inhibited. In the analysis, the mechanics basis for processing and materials selection guidelines for preventing fracture in PVSK solar cells is provided.

adhesion↗

Earth-scattering induced modulation in low-threshold dark matter experiments

Dark matter particles with sufficiently large interactions with ordinary matter can scatter in the Earth before reaching and scattering in a detector. This induces a modulation in the signal rate with a period of one sidereal day. We calculate this modulation for sub-GeV dark matter particles that interact either with a heavy or an ultralight dark-photon mediator and investigate the resulting signal in low-threshold detectors consisting of silicon, xenon, or argon targets. The scattering in the Earth is dominated by dark matter scatters off nuclei, while the signal in the detector is easiest to observe from dark matter scattering off electrons. We investigate the properties of the modulation signal and provide projections of the sensitivity of future experiments. We find that a search for a modulation signal can probe new regions of parameter space near the energy thresholds of current experiments, where the data are typically dominated by backgrounds.

Models for Dark Matter↗

Highly efficient visible and near-IR photon pair generation with thin-film lithium niobate

Efficient on-chip entangled photon pair generation at telecom wavelengths is an integral aspect of emerging quantum optical technologies, particularly for quantum communication and computing. However, moving to shorter wavelengths enables the use of more accessible silicon detector technology, and opens up applications in imaging and spectroscopy. Here, we present high brightness ((1.6 ± 0.3) × 10 9 pairs/s/mW/nm) visible–near-IR photon pair generation in a periodically poled lithium niobate nanophotonic waveguide. The degenerate spectrum of the photon pairs is centered at 811 nm with a bandwidth of 117 nm when pumped with a spectrally multimode laser diode. The measured on-chip source efficiency of (2.3 ± 0.5) × 10 11 pairs/s/mW is on par with source efficiencies at telecom wavelengths and is also orders of magnitude higher than the efficiencies of other visible sources implemented in bulk crystal or diffused waveguide-based technologies. Further improvements in the brightness and efficiencies are possible by pumping the device with a single-frequency laser, which would also shrink the pair bandwidth. These results represent the shortest wavelength of photon pairs generated in a nanophotonic waveguide reported to date by nearly an octave.

42 ENGINEERING↗

Enabling Ultrathin III-V Solar Cells Using Dual Photonic Crystals

III-V materials provide the highest efficiencies, but the higher cost of these materials compared to other alternatives such as silicon has limited their applications. One way of reducing the costs is by minimizing the amount of material needed. In this work, using optical simulations we test light trapping layers in the front and in the back of a GaAs single junction solar cell. By using these layers, we predict that we can obtain near optically thick GaAs single junctions with only 300 nm active material, with maximum calculated J sc of 28.7 mA/cm 2 under the radiative limit.

14 SOLAR ENERGY↗

Ultralow 0.034 dB/m loss wafer-scale integrated photonics realizing 720 million Q and 380 μW threshold Brillouin lasing

We demonstrate 0.034 dB/m loss waveguides in a 200-mm wafer-scale, silicon nitride (Si 3 N 4 ) CMOS-foundry-compatible integration platform. We fabricate resonators that measure up to a 720 million intrinsic Q resonator at 1615 nm wavelength with a 258 kHz intrinsic linewidth. This resonator is used to realize a Brillouin laser with an energy-efficient 380 µW threshold power. The performance is achieved by reducing scattering losses through a combination of single-mode TM waveguide design and an etched blanket-layer low-pressure chemical vapor deposition (LPCVD) 80 nm Si 3 N 4 waveguide core combined with thermal oxide lower and tetraethoxysilane plasma-enhanced chemical vapor deposition (TEOS–PECVD) upper oxide cladding. This level of performance will enable photon preservation and energy-efficient generation of the spectrally pure light needed for photonic integration of a wide range of future precision scientific applications, including quantum, precision metrology, and optical atomic clocks.

Liu, Kaikai (ORCID:0000000213609646)↗

The CLAS12 Silicon Vertex Tracker

Silicon Vertex Tracker (SVT) has been designed for the CLAS12 spectrometer using single-sided microstrip sensors fabricated by Hamamatsu Photonics. The sensors have a graded angle design to minimize dead areas and a readout pitch of 156 um, with intermediate strips. Each double-sided SVT module hosts three daisy-chained sensors on each side with a full strip length of 33 cm. There are 512 channels per module, read out by four Fermilab Silicon Strip Readout (FSSR2) chips, featuring data-driven architecture, mounted on a rigid–flex hybrid board. The modules are assembled in a barrel configuration using a unique cantilevered geometry to minimize the amount of material in the tracking volume. This paper is focused on the design, qualification of the performance, and experience in operating and commissioning the tracker during the first year of the data taking.

47 OTHER INSTRUMENTATION↗

Optical and microstructural characterization of Er 3+ doped epitaxial cerium oxide on silicon

Rare-earth ion dopants in solid-state hosts are ideal candidates for quantum communication technologies, such as quantum memories, due to the intrinsic spin–photon interface of the rare-earth ion combined with the integration methods available in the solid state. Erbium-doped cerium oxide (Er:CeO 2 ) is a particularly promising host material platform for such a quantum memory, as it combines the telecom-wavelength (~ 1.5 μm) 4f–4f transition of erbium, a predicted long electron spin coherence time when embedded in CeO 2 , and a small lattice mismatch with silicon. In this work, we report on the epitaxial growth of Er:CeO 2 thin films on silicon using molecular beam epitaxy, with controlled erbium concentration between 2 and 130 parts per million (ppm). We carry out a detailed microstructural study to verify the CeO 2 host structure and characterize the spin and optical properties of the embedded Er 3+ ions as a function of doping density. In as-grown Er:CeO 2 in the 2–3 ppm regime, we identify an EPR linewidth of 245(1) MHz, an optical inhomogeneous linewidth of 9.5(2) GHz, an optical excited state lifetime of 3.5(1) ms, and a spectral diffusion-limited homogeneous linewidth as narrow as 4.8(3) MHz. We test the annealing of Er:CeO 2 films up to 900 °C, which yields narrowing of the inhomogeneous linewidth by 20% and extension of the excited state lifetime by 40%.

36 MATERIALS SCIENCE↗

Nucleon Structure Studies at Jefferson Lab and the Electron Ion Collider

The research programs of Thomas Jefferson Laboratory (JLab) and the future Electron- Ion Collider (EIC) focus on one of the main goals of strong interaction studies : understanding the structure of nucleons in terms of the quarks and gluons composing them. Their structure is encoded in functions such as Generalized Parton Distributions (GPDs), which describe how quarks and gluons’ transverse position and longitudinal momentum are distributed inside nucleons. GPDs allow to obtain three-dimensional pictures of nucleons and to understand some of their fundamental properties, such as their internal pressure or the emergence of their spin from the dynamics of the partons composing them. At JLab and the EIC, electron beams are used to probe nucleons. Measurement of reactions such as Deeply Virtual Compton Scattering (DVCS) allows access to GPDs. The first longitudinally polarized-target experiment of the CLAS12 program at Jlab took place in 2022-2023. Combining polarized electron beams and nucleon targets, this experiment offers unique access to observables that allow the measurement of different types of GPDs. In particular, the DVCS beam- and target-spin asymmetries for protons and neutrons in deuterium will be measured for the first time. They give access to kinds of GPDs that are still poorly known, and the comparison between proton and neutron data will allow the extraction of the flavor dependence of the structure of nucleons. Specific analysis methods have been implemented to work with a polarized nuclear target and are presented in this thesis. These methods allow to obtain preliminary results for the asymmetries, waiting for the complete statistics to be available. In the long term, the experimental program for the EIC has been established with a strong emphasis on the measurement of the structure of nucleons at high energy. Measurements of reactions such as DVCS impose strict requirements on the electromagnetic calorimeter that will allow to measure the energy of the scattered electrons and photons. This calorimeter, which is under development, will be based on scintillating crystals read by Silicon Photomultipliers (SiPMs). A new type of glass-based scintillating material was tested, evaluating the possibilities to meet the technical requirements concerning their light yield and resistance to radiation damage in particular. Several models of SiPMs have been characterized, demonstrating they can operate over the vast energy range necessary to address the physics case at the EIC and providing guidelines for developing their readout electronics.

Pilleux, Noemie↗

Nanoscale dynamics during self-organized ion beam patterning of Si. I. Ar + bombardment

X-ray photon correlation spectroscopy (XPCS) is used to investigate the fluctuation dynamics during self- organized nanopatterning of silicon by Ar + bombardment at 65° polar angle. Rich structure is observed in the development of the correlation dynamics as seen in the evolving correlation time τ(q || ) and fluctuation relaxation exponent n(q || ). Furthermore, on length scales of the ripple structure, local structure becomes ever more long lived as coarsening progresses. In addition, τ (q || ) develops a peak on length scales corresponding to the ripple wavelength. As patterning progresses, correlation times become asymmetric between the positive and negative directions, suggesting the possibility of different dynamics on the slopes facing toward and away from the ion beam. Relaxation exponents show evolution from linear dynamics at early times to compressed exponential relaxation at low wave numbers and stretched exponential relaxation at high wave numbers. Compressed exponential behavior is reminiscent of stress relaxation processes observed in glasses.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Defect engineering in wide-bandgap perovskites for efficient perovskite–silicon tandem solar cells

Wide-bandgap (WBG) mixed-halide perovskites show promise of realizing efficient tandem solar cells but at present suffer from large open-circuit voltage loss and the mechanism is still unclear. Here we show that WBG perovskites with iodide–bromide compositions have an increased concentration of deep traps induced by iodide interstitials, which limits performance of WBG perovskite cells. We employ tribromide ions to suppress the iodide interstitial formation and thus reduce charge recombination in bladed WBG perovskite films of Cs 0.1 FA 0.2 MA 0.7 Pb(I 0.85 Br 0.15 )3. The 1-µm-thick opaque WBG perovskite solar cells have an efficiency of 21.9%, a small open-circuit voltage deficit of 0.40 V and a large fill factor of 83%. The efficiency of the best-performing monolithic perovskite–silicon tandem cell using this perovskite reaches 28.6%. Furthermore, the tribromide addition also suppresses light-induced phase segregation in WBG perovskites and thus enhance device stability. Encapsulated tandem cells maintain 93% of their initial efficiency after operation for 550 h.

14 SOLAR ENERGY↗

Design and performance of silicon strip sensors with slim edges for HPS experiment

In this paper, we report on design and performance of new strip sensors for the Heavy Photon Search (HPS) experiment. The sensors feature a slim edge implementation using the Scribe–Cleave–Passivate (SCP) method. The slim edge design has allowed the introduction of a new layer closer to the target, which increased the tracking acceptance and vertex precision, improving physics reach of the experiment. We describe the production, testing, and operational experience with the new sensors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

ATLAS ITk strip sensor quality control procedures and testing site qualification

Abstract The high-luminosity upgrade of the Large Hadron Collider, scheduled to become operational in 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker. Radiation hard n + -in-p micro-strip silicon sensors were developed by the ATLAS Inner Tracker strip collaboration and are produced by Hamamatsu Photonics K.K. Production of the total amount of 22000 strip sensors has started in 2020 and will continue until 2025. The ATLAS strip sensor collaboration has the responsibility to monitor the quality of the fabricated devices by performing detailed measurements of individual sensor characteristics and by comparing the obtained results with the tests done by the manufacturer. Dedicated Quality Control procedures were developed to check whether the delivered large-format sensors adhere to the ATLAS specifications. The institutes performing the Quality Control testing of the pre-production and production ATLAS ITk strip sensors had to initially be qualified for multiple high-throughput tests by successfully completing the Site Qualification process. The Quality Control procedures and the qualification process are described in this paper.

Instruments & Instrumentation↗

Ultra-thin photonic crystal slab metalenses [Invited]

We report a novel ultra-thin metalens design based on photonic crystal slab (PCS) resonance modes. We experimentally verified with a metalens structure based on amorphous silicon on a quartz material platform by implementing the optical guided resonance on the PCS. The PCS metalens designs feature an ultra-thin device layer of about 160 nm at an operation wavelength of 940 nm. A full 2π transmission phase transition is realized by varying the air hole sizes at the design wavelength. Metalens devices with different phase change gradients were designed and fabricated to achieve different NAs. A maximum of 86.4% focusing efficiency is achieved. Imaging capabilities are characterized, and clear images are observed within the field of view. The PC resonance-based phase modulation design can be applied to optical beam manipulation, phase plate design, imaging, and laser beam formation applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Telecom-to-visible quantum frequency converter on a silicon nitride chip

Quantum frequency conversion serves a key role in the realization of hybrid quantum networks by interfacing between wavelength-incompatible platforms. Here we present what is believed to be the first quantum frequency converter connecting visible and telecom domains on a silicon nitride (SiN) chip, using Bragg-scattering four-wave mixing to upconvert heralded single photons from 1260 to 698 nm, which covers a 192 THz span. We examine the noise sources in SiN and devise approaches to suppress noise photons at the source and target frequencies to enable measurements at the single-photon level. We demonstrate an on-chip conversion efficiency of 5% in photon flux and describe design modifications that can be implemented to significantly improve it. Our results pave the way for the implementation of complementary metal-oxide-semiconductor (CMOS)-compatible devices in quantum networks.

59 BASIC BIOLOGICAL SCIENCES↗