Radiation effects in silicon solar cells Quarterly progress report, 1 Jul. - 30 Sep. 1970
Defects responsible for degradation in output of silicon solar cells irradiated by space radiation
Berger, R. A.↗
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Observation of structural damage in lithium- doped silicon solar cells produced by neutron irradiation
Form of structural damage in Li-doped p-n silicon solar cells produced by fast neutron irradiation
Ghosh, S.↗
Optimized silicon solar cells for space exploration power systems
A program is described aimed at designing and fabricating improved silicon solar cells for a range of missions extending from 0.1 to 15 astronomical units (Mercury to Jupiter). For missions lying inside Earth radius (Mercury, Venus) the major cell property required was very low series resistance, allowing high curve fill factor to be maintained at the higher intensities. For the Mercury mission, the temperature of the cell had to be kept low. This was achieved by reflecting more of the incident sunlight by use of large area front contacts. For the outer missions (Mars, the Asteroid belts and Jupiter) the formation of a Schottky barrier at the back contact had to be avoided (by use of a P+ layer under the back contact) and the excess leakage current of the PN junction had to be reduced. Optimum grid patterns were also derived and used for these missions.
Iles, P. A.↗
FEP encapsulated N/P silicon solar cells after simulated micrometeoroid exposure.
The effects of simulated micrometeoroid exposure on the performance of N/P silicon solar cells encapsulated for their protection in fluorinated ethylene propylene were determined in a shock tube. It was found that the short-circuit current decreased after exposure to the simulated micrometeoroid particles. The shape of the curve remained the same and was simply translated downward with a concomitant drop in open-circuit voltage.
Mirtich, M. J.↗
The observation of damage regions produced by neutron irradiation in lithium-doped silicon solar cells.
Study regions of lattice disorder produced in lithium-doped float-zone melted n/p-type silicon solar cells by irradiation with monoenergetic neutrons at doses between 10 to the 10th and 10 to the 13th per cu cm. The defect regions were revealed by chemically etching the surface of the solar cells and by observing carbon replicas in an electron microscope. It was found that the defect density increased with increasing irradiation dose and increased lithium content, whereas the average defect diameter was found to decrease. From thermal annealing experiments it was found that in the lithium-doped material the defect structure was stable at temperatures between 300 and 1200 K. This was found to be in contrast to the undoped material where at the lowest doses considerable annealing was observed to occur. These results are discussed in terms of the theoretical predictions and models of defect clusters proposed by Gossick (1959) and Crawford and Cleland (1959).
Ghosh, S.↗
Parametric performance characteristics and treatment of temperature coefficients of silicon solar cells for space application
The electrical performance characteristics of 2 and 10 ohms-cm N/P-type silicon solar cells were measured at simulated solar intensities of 5, 50, 100, 140, 250, 400, 550, 700, and 850 mW/sq cm. At each intensity, the temperature was varied in increments of 20 deg between extremes of +160 and -160 C. Short-circuit current, open-circuit voltage, and maximum power are presented in graphical format. Also described are three methods for predicting solar cell electrical performance as a function of temperature and intensity. Two of the methods are suitable for use at extreme temperature-intensity conditions. These methods were used sucessfully to predict the performance of the transducer on board the Mariner Mars 1971 spacecraft.
Patterson, R. E.↗
Investigation of the double exponential in the current-voltage characteristics of silicon solar cells
A theoretical analysis is presented of certain peculiarities of the current-voltage characteristics of silicon solar cells, involving high values of the empirical constant A in the diode equation for a p-n junction. An attempt was made in a lab experiment to demonstrate that the saturation current which is associated with the exponential term qV/A2kT of the I-V characteristic, with A2 roughly equal to 2, originates in the space charge region and that it can be increased, as observed on ATS-1 cells, by the introduction of additional defects through low energy proton irradiation. It was shown that the proton irradiation introduces defects into the space charge region which give rise to a recombination current from this region, although the I-V characteristic is, in this case, dominated by an exponential term which has A = 1.
Wolf, M.↗
Development of low cost contacts to silicon solar cells
The results of the second phase of the program of developing low cost contacts to silicon solar cells using copper are presented. Phase 1 yielded the development of a plated Pd-Cr-Cu contact system. This process produced cells with shunting problems when they were heated to 400 C for 5 minutes. Means of stopping the identified copper diffusion which caused the shunting were investigated. A contact heat treatment study was conducted with Pd-Ag, Ci-Ag, Pd-Cu, Cu-Cr, and Ci-Ni-Cu. Nickel is shown to be an effective diffusion barrier to copper.
Tanner, D. P.↗
Performance of high resistivity n+pp+ silicon solar cells under 1 MeV electron irradiation
High resistivity (1250 and 84 ohm-cm) n(+)pp(+) silicon solar cells were irradiated and their performance evaluated as a function of fluence. The greatest degradation in power occurred for the higher resistivity cell. The data were analyzed under open circuit conditions, and the components of V sub oc determined as a function of fluence. It was found that the voltage contributions from the front and back junctions decreased while the base component (V sub B) increased with fluence. The anomalous behavior of V sub B was attributed to an increase in the base minority carrier gradient with fluence. An argument that the increased power degradation in the 1250 ohm-cm cells was attributable to an increased voltage drop in the base is presented. Diffusion lengths calculated under high injection conditions were significantly greater than those determined under low injection. This was attributed to a saturation of recombination centers under high injection conditions.
Weinberg, I.↗
Toward a systematic design theory for silicon solar cells using optimization techniques
This work is a first detailed attempt to systematize the design of silicon solar cells. Design principles follow from three theorems. Although the results hold only under low injection conditions in base and emitter regions, they hold for arbitrary doping profiles and include the effects of drift fields, high/low junctions and heavy doping concentrations of donor or acceptor atoms. Several optimal designs are derived from the theorems, one of which involves a three-dimensional morphology in the emitter region. The theorems are derived from a nonlinear differential equation of the Riccati form, the dependent variable of which is a normalized recombination particle current.
Misiakos, K.↗
Analysis of radiation damage in silicon solar cells and annealing or compensation of damage by impurities Final report, 7 Jan. 1964 - 21 Apr. 1966
Radiation damage in silicon solar cells and annealing or compensation of damage by impurities
SOLAR CELL↗
Use of low-energy hydrogen ion implants in high-efficiency crystalline-silicon solar cells
The use of low-energy hydrogen implants in the fabrication of high-efficiency crystalline silicon solar cells was investigated. Low-energy hydrogen implants result in hydrogen-caused effects in all three regions of a solar cell: emitter, space charge region, and base. In web, Czochralski (Cz), and floating zone (Fz) material, low-energy hydrogen implants reduced surface recombination velocity. In all three, the implants passivated the space charge region recombination centers. It was established that hydrogen implants can alter the diffusion properties of ion-implanted boron in silicon, but not ion-implated arsenic.
Fonash, S. J.↗
Silicon Materials Task of the Low Cost Solar Array Project, Phase 3. Effect of Impurities and Processing on Silicon Solar Cells
The effects of impurities, various thermochemical processes, and any impurity process interactions on the performance of terrestrial silicon solar cells are defined. Determinations of the segregation coefficients of tungsten, tantalum, and cobalt for the Czochralski pulling of silicon single crystals are reported. Sensitive neutron activation analysis was used to determine the metal impurity content of the silicon while atomic absorption was used to measure the metal content of the residual liquid from which the doped crystals were grown. Gettering of Ti doped silicon wafers improved cell performance by one to two percent for the highest temperatures and longest times. The HCl is more effective than POCl3 treatments for deactivating Ti but POCl3 and HCl produced essentially identical results for Mo or Fe.
Hopkins, R. H.↗
Towards a 20 percent efficient silicon solar cell
A project is underway at the University of New South Wales aimed at producing a 20 percent efficient silicon solar cell. A prerequisite for obtaining such a significant increase in cell efficiency is the improvement of the open circuit voltage of these cells. Two techniques are described which have produced experimental devices with open circuit voltages of 690 mV or higher. These high voltage techniques have been combined with other high efficiency design features to produce silicon cells with independently measured energy conversion efficiencies in excess of 19 percent under standard terrestrial test conditions (direct beam AM1.5 spectrum, 100 mW/sq cm, 28 C).
Green, M. A.↗
A reliable all-silver front contact for silicon solar cells
The feasibility of making an adherent and moisture degradation resistant silver-only front contact to silicon solar cells was demonstrated. Optimum fabrication processes and process sequences were determined for making such contacts. These contacts were found to also have good electrical characteristics. A back contact of aluminum-silver was also developed. This proved very satisfactory for low-temperature applications.
Lamneck, J. H., Jr.↗
Optimum design of antireflection coating for silicon solar cells
Based on classical electromagnetic theory, reflectivity calculations for various single and double optical coating systems for silicon solar cells are presented. From calculations and considerations of solar spectral response of the solar cells, the number and thickness of coating materials needed to obtain efficient solar cells can be predicted. Some experimental results on single layer coated cells are also presented for comparison with calculations, and agreement is good. By means of microwave transmission line analogy, the design of the multilayer coating can be simplified by using Tchebycheff polynomials.
Wang, E. Y.↗
Effects of high doping levels silicon solar cell performance
The significance of the heavy doping effects (HDE) on the open-circuit voltage of silicon solar cells is assessed. Voltage calculations based on diffusion theory are modified to include the first order features of the HDE. Comparisions of the open-circuit voltage measured for cells of various base resistivities are made with those calculated using the diffusion model with and without the HDE. Results indicate that the observed variation of voltage with base resistivity is predicted by these effects. A maximum efficiency of 19% (AM0) and a voltage of 0.7 volts are calculated for 0.1 omega-cm cells assuming an optimum diffused layer impurity profile.
Godlewski, M. P.↗
Optimized metallization patterns for large-area silicon solar cells
Design criteria is presented for optimizing the front-surface metallization pattern of large-area silicon solar cells. A computer program calculates the spacing of metal fingers which minimizes resistive and shadowing losses. Finger spacing and efficiency for the optimum design are presented as a function of finger width and cell size. It is shown that quantitative evaluation of metallization pattern options can be made without cell fabrication.
Matzen, W. T.↗