Search NASA⌕ Search

SEARCH · Search NASA

Results for “single-crystals”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Silicon carbide - Progress in crystal growth

Recent progress in the development of two processes for producing large-area high-quality single crystals of SiC is described: (1) a modified Lely process for the growth of the alpha polytypes (e.g., 6H SiC) initially developed by Tairov and Tsvetkov (1978, 1981) and Ziegler et al. (1983), and (2) a process for the epitaxial growth of the beta polytype on single-crystal silicon or other substrates. Growth of large-area cubic SiC on Si is described together with growth of defect-free beta-SiC films on alpha-6H SiC crystals and TiC lattice. Semiconducting qualities of silicon carbide crystals grown by various techniques are discussed.

Powell, J. Anthony↗
NASA NTRS1988

Direct-current magnetron fabrication of indium tin oxide/InP solar cells

Efficient solar cells of indium tin oxide (ITO)/InP have been fabricated using dc magnetron deposition of the ITO into single-crystal InP substrates. Efficiencies of over 16.5 percent have been achieved, the highest ever recorded for devices of this construction. The results of studies of the annealing behavior of the cells and observations of interfacial changes using Raman spectroscopy and secondary ion mass spectroscopy, together with measurements of light and dark current/voltage and quantum efficiency characteristics, are used to model the behavior of the cells and explain their lack of sensitivity to fabrication conditions.

Coutts, T. J.↗
NASA NTRS1988

Raman scattering studies of chemical-vapor-deposited cubic SiC films of (100)Si

Raman scattering studies for a series of CVD-grown cubic SiC single-crystal films with film thickness from 600 A to 17 microns are discussed. The results suggest that the crystalline orientations of the Si substrate and the 3C-SiC film are the same. It is found that the Si 522/cm phonon from a Si wafer is enhanced in intensity by a factor of 2-3 due to a CVD overlayer of cubic SiC, and that the 3C-SiC longitudinal optical phonon at the Gamma point from SiC/Si samples is enhanced by a factor of two or three following the removal of the Si substrate. The variation of the Raman spectrum with incident power is investigated, and a method for determining the Raman cross section for 3 C-SiC is proposed.

Feng, Z. C.↗
NASA NTRS1989

Laser-Assisted Growth Of AlGaAs Films

Films of aluminum gallium arsenide grown on gallium arsenide by laser-assisted organometallic chemical-vapor deposition. Films single-crystal and contain no detectable oxygen or carbon. Laser beam impinges on substrate in quartz reaction chamber surrounded by radio-frequency induction coils. Film grows much more rapidly at 500 degree C than 450 degree C. Slight amount of interfacial oxygen detectable in film deposited at lower temperature.

Warner, Joseph D.↗
NASA NTRS1989

Roughening Surfaces Of Solar Cells

Proposed treatment involving bombardment by ions gives silicon solar cells rough surfaces and increases amount of light absorbed by cells. First step of treatment, wafer of single-crystal silicon held at temperature of 70 degree C or higher while bombarded with argon or hydrogen ions at kinetic energies between 100 and 2,000 eV. This high dose produces damaged layer on surface, consisting of outer polycrystalline sublayer and underlying sublayer containing extended defects. Bombarded wafer then etched chemically. Photovoltaic conversion efficiency increases with number of reflections at surface of silicon cell because large part of light absorbed at each reflection. Deeply textured surface provides opportunities for multiple reflections.

Singh, Ranbir↗
NASA NTRS1989

Deposition Of Pinhole-Free CoSi2 Film

New fabrication method produces pinhole-free film of cobalt silicide on silicon substrate. In new method, cobalt and silicon evaporated from electron-beam sources onto substrate of silicon having <111> crystal orientation. Materials deposited in stoichiometric ratio of two silicon atoms to one of cobalt, yielding single-crystal CoSi2 film 5 to 10 nm thick. Layer of amorphous silicon 1 to 2 nm thick deposited on CoSi2. Specimen then annealed at 550 degree C for 10 min. Absence of pinholes critical to operation of multilayer devices employing CoSi2 layers, such as metal base transistor.

Lin, True-Lon↗
NASA NTRS1989

Surrogate Seeds For Growth Of Crystals

Larger crystals of higher quality grown. Alternative method for starting growth of crystal involves use of seed crystal of different material instead of same material as solution. Intended for growing single-crystal proteins for experiments but applicable in general to growth of crystals from solutions and to growth of semiconductor or other crystals from melts.

Shlichta, Paul J.↗
NASA NTRS1989

Ultra-thin, light-trapping silicon solar cells

Design concepts for ultra-thin (2 to 10 microns) high efficiency single-crystal silicon cells are discussed. Light trapping allows more light to be absorbed at a given thickness, or allows thinner cells of a given Jsc. Extremely thin cells require low surface recombination velocity at both surfaces, including the ohmic contacts. Reduction of surface recombination by growth of heterojunctions of ZnS and GaP on Si has been demonstrated. The effects of these improvements on AM0 efficiency is shown. The peak efficiency increases, and the optimum thickness decreases. Cells under 10 microns thickness can retain almost optimum power. The increase of absorptance due to light trapping is considered. This is not a problem if the light-trapping cells are sufficiently thin. Ultra-thin cells have high radiation tolerance. A 2 microns thick light-trapping cell remains over 18 percent efficient after the equivalent of 20 years in geosynchronous orbit. Including a 50 microns thick coverglass, the thin cells had specific power after irradiation over ten times higher than the baseline design.

Landis, Geoffrey A.↗
NASA NTRS1989

Advances in thin-film solar cells for lightweight space photovoltaic power

The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuIn Se2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuIn Se2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

Landis, Geoffrey A.↗
NASA NTRS1987

High temperature isothermal and cyclic oxidation behavior of a single crystal Ni base superalloy

High-temperature oxidation behavior of a Ni-base superalloy, PWA1480, developed for use as single-crystal blades and vanes in advanced gas turbines, has been assessed. Isothermal and cyclic oxidation tests up to 200 hours were conducted at 1323, 1410, and 1473 K. The alloy was evaluated as to sample weight change, type of scale formed, type and amount of spall, and microstructural changes. The oxidation attack was more severe in cyclic as compared with isothermal oxidation. Also, enormous growth of the gamma-prime precipitate was observed at 1423 K during cyclic oxidation.

Hebsur, M. G.↗
NASA NTRS1988

Study of high temperature oxide superconductors

Experimental studies are reported whose results indicate that proper processing procedures are critical to the formation of high-temperature copper oxide superconductors. Superconducting 123 films can be fabricated using the green 211 phase as a substrate. The transition temperature and transition width characteristics of these films are better than those obtained when other oxide compounds are used as substrates. A compact or single-crystal 211 phase will be desirable as a substrate for high-quality thin films. A new high T(c) copper oxide compound with nonrare earth elements was prepared using high-temperature processing. A YBa2Cu3O7-Ag composite with improved electrical conductivity was also prepared.

Wu, M. K.↗
NASA NTRS1989

Influence of precipitate morphology on intermediate temperature creep properties of a nickel-base superalloy single crystal

The relative creep behavior of cuboidal (as-heat treated) and rafted (precrept at 1000 C) gamma-prime microstructures in the single-crystal Ni-based superalloy NASAIR 100 at 760 C was investigated using SEM and TEM examinations of materials at various stages of creep. It was found that, at high applied stresses, the crystals with cuboidal gamma-prime structure had both lower minimum creep rates and longer rupture lives than the crystals with lamellar gamma-prime. At lower stress levels, the initially cuboidal gamma-prime microstructure maintained a lower creep rate, but exhibited a similar rupture life compared to the prerafted crystals.

Nathal, M. V.↗
NASA NTRS1988

The influence of high thermal gradient casting, hot isostatic pressing and alternate heat treatment on the structure and properties of a single crystal nickel base superalloy

A development program has been conducted to improve the cyclic properties of the PWA 1480 single-crystal superalloy by reducing or entirely eliminating casting porosity at fatigue-initiation sites, through the use of improved casting process parameters and HIPing; potential mechanical property improvements in a high-pressure hydrogen environment were also sought in alternatives to the standard coating and heat-treatment cycle. High thermal gradient casting was found to yield a reduction in overall casting porosity density and pore sizes. The most dramatic mechanical property improvement resulted from HIPing.

Fritzemeier, L. G.↗
NASA NTRS1988

The effect of hydrogen on the deformation and fracture of PWA 1480

The effect of internal hydrogen on mechanical properties and fracture behavior is studied in the single-crystal nickel-base superalloy PWA 1480. In particular, plane strain fracture toughness and tensile tests have been performed in hydrogen-free samples and hydrogen-gas phase-charged samples in two different sample orientations. The mechanical properties, as well as the fracture process, were found to be very dependent on orientation. Hydrogen did not affect the yield strength but reduced the uniform tensile elongation more than 75 percent. However, hydrogen reduced the tensile reduction-in-area and the fracture toughness by only 10 percent. Cleavage of the eutectic gamma-prime, as well as the role of hydrogen trapping, will be discussed. These results will be analyzed in terms of the effects that orientation, microstructure, and hydrogen have on the fracture process.

Walston, W. S.↗
NASA NTRS1989

Flow-induced morphological instabilities due to temporally-modulated stagnation-point flow

The influence of periodically-modulated planar stagnation-point flow on the morphological stability of a directionally-solidifying interface is presently considered with a view to the effect of unsteady nonparallel flows on single-crystal growth. The modeling of the system assumes that the viscous boundary layer thickness is much greater than that of the solute boundary layer, and that the modulation frequency is much smaller than the strength of plane stagnation-point flow. The solidifying interface is either stabilized or destabilized depending on the ratio of the period of modulation to the solute-diffusion time.

Merchant, G. J.↗
NASA NTRS1990

Interferometric Measurement Of Residual Stress

Stress averaged through thickness of plate measured nondestructively. Theory of elasticity combined with laser interferometric technique into technique for measurement of residual stresses in solid objects - usually in thin, nominally-flat plates. Measurements particularly useful in inspection of wafers of single-crystal silicon for making solar cells or integrated circuits, because stresses remaining after crystal-growing process cause buckling or fracture. Used to predict deflections of plates caused by known applied loads under specified boundary condition, or to infer applied loads that cause known deflections. Also used to relate known deflections to residual stresses equivalent to stresses produced by fictitious applied loads.

Danyluk, Steven↗
NASA NTRS1990

Spectroscopic Analysis Of Insulating Crystal Fibers

New method provides rapid characterization of optical properties. Technique for determining optical properties of insulating single-crystal fibers developed and applied to sapphire, spinel, and YAIO crystalline host fibers doped with triply ionized titanium. Crystal fibers grown more rapidly and less expensively.

Buoncristiani, A. M.↗
NASA NTRS1988

Modeling and simulation of InP homojunction solar cells

Modeling and simulation of single-crystal InP homojunction solar cells has been performed using the PC-1D code. Cell design and performance have been optimized using the best available estimates of the various materials parameters. A comparison has been made of the predictions of the PC-1D model to those of other models. The optimum performance is predicted to give an efficiency approaching 21 percent at AM0. It is shown that in order to describe the performance of actual cells it is necessary to use larger values of the intrinsic carrier concentration and the surface recombination velocity (SRV) than have been reported in the literature. However, even with a near-maximum value of SRV (e.g., 10 to the 7th cm/s) it is necessary to reduce the minority carrier diffusion length in the emitter to only 0.01 micron in order to account for the relatively low quantum efficiency in the blue part of the spectrum. This indicates that improvement in the emitter bulk properties could be much more important than the SRV. Other loss mechanisms are also discussed; in particular, it is shown that recombination in the base, for good quality material, is relatively insignificant.

Yahia, A. H.↗