Application of a unidimensional diffusion model to the propagation of solar cosmic rays
Unidimensional diffusion model for solar cosmic ray propagation within bounded layer
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Unidimensional diffusion model for solar cosmic ray propagation within bounded layer
Effect of sintering TiAg contact on p/n cells from effect of heat treatment on lithium diffused cells
Heavy ion diffusion in solar corona, emphasizing flow velocity and density
Effects of radial diffusion in solar corona and solar wind
The work performed to investigate the effect of various process parameters on the performance of lithium doped P/N solar cells is described. Effort was concentrated in four main areas: (1) the starting material, (2) the boron diffusion, (3) the lithium diffusion, and (4) the contact system. Investigation of starting material primarily involved comparison of crucible grown silicon (high oxygen content) and Lopex silicon (low oxygen content). In addition, the effect of varying growing parameters of crucible grown silicon on lithium cell output was also examined. The objective of the boron diffusion studies was to obtain a diffusion process which produced high efficiency cells with minimal silicon stressing and could be scaled up to process 100 or more cells per diffusion. Contact studies included investigating sintering of the TiAg contacts and evaluation of the contact integrity.
Low-melting phosphate and borate glasses were screen printed on silicon wafers and heated to form n and p junctions. Data on surface appearance, sheet resistance and junction depth are presented. Similar data are reported for vapor phase transport from sintered aluminum metaphosphate and boron-containing glass-ceramic solid sources. Simultaneous diffusion of an N(+) layer with screen-printed glass and a p(+) layer with screen-printed Al alloy paste was attempted. No p(+) back surface field formation was achieved. Some good cells were produced but the heating in an endless-belt furnace caused a large scatter in sheet resistance and junction depth for three separate lots of wafers.
In SPRAT XI, we proposed that p(sup +)n diffused junction InP solar cells should exhibit a higher conversion efficiency than their n(sup +)p counterparts. This was mainly due to the fact that our p(sup +)n (Cd,S) cell structures consistently showed higher V (sub OC) values than our n(sup +)p (S,Cd) structures. The highest V(sub OC) obtained with the p(sup +)n (Cd,S) cell configuration was 860 mV, as compared to the highest V(sub OC) 840 mV obtained with the n(sup +)p (S,Cd) configuration (AMO, 25 C). In this work, we present the performance results of our most recent thermally diffused cells using the p(sup +)n (Cd,S) structure. We have been able to fabricate cells with V(sub OC) values approaching 880 mV. Our best cell with an unoptimized front contact grid design (GS greater than or equal to 10%) showed a conversion efficiency of 13.4% (AMO, 25 C) without an AR coating layer. The emitter surface was passivated by a -50A P rich oxide. Achievement of such high V(sub OC) values was primarily due to the fabrication of emitter surfaces, having EPD densities as low as 2E2 cm(sup -2) and N(sub a)N(sub d) of about 3E18 cm (sup -3). In addition, our preliminary investigation of p(sup +)n structures seem to suggest that Cd-doped emitter cells are more radiation resistant than Zn-doped emitter cells against both high energy electron and proton irradiation.
Various aspects of lithium solar cell fabrication processes
Fabrication and characteristics of radiation resistant lithium doped p-n solar cells
TiPdAg and Al contact systems on p/n cells for humidity resistance and strength
Four Surface Energy and Radiation Balance Systems (SERBS) were installed and operated for two weeks in Kansas during July of 1986. Surface energy and radiation balances were investigated on six sites on the Konza Prairie about 3 km south of Manhattan, Kansas. Measurements were made to allow the computation of these radiation components: total solar and diffuse radiation, reflected solar radiation, net radiation, and longwave radiation upward and downward. Measurements were made to allow the computation of the sensible and latent heat fluxes by the Bowen ratio method using differential psychrometers on automatic exchange mechanisms. The report includes a description of the experimental sites, data acquisition systems and sensors, data acquisitions system operating instructions, and software used for data acquisition and analysis. In addition, data listings and plots of the energy balance components for all days and systems are given.
Presently favored mechanisms of coronal heating (current sheet dissipation and Alfven wave resonant heating) deposit heat in thin layers. Classical thermal conduction cannot explain how heat is transported across the magnetic field. If heating occurs in thin layers, large pressure gradients can be created which can give rise to ballooning modes. These instabilities are caused by the pressure gradient and the curvature of the magnetic field, and are stabilized by magnetic tension. The modes are broad band in wavelength and should produce turbulence. A mixing length expression for the turbulent heat transport shows that it is more than adequate to rapidly convect heat into much broader layers. Furthermore, the turbulent resistivity implies that heating occurs over most of the width of these broadened layers. The broadening also implies that much shorter time scales are required for heating. The beta values in the corona suggest that 1-10 turbulent layers are formed in typical loop or arch structures.
Past missions have shown that the earth's albedo can have a significant effect on the sun sensors used for spacecraft attitude control information. In response to this concern, an algorithm was developed to simulate this phenomenon, consisting of two parts, the physical model of albedo and its effect on the sun sensors. This paper contains the theoretical development of this model, practical operational notes, and its implementation in a FORTRAN subroutine.
The spatial variation of minority-carrier diffusion length in the vicinity of a grain boundary for a polycrystalline silicon sheet has been measured by the use of the EBIC technique. The effect of such a variation on solar-cell output has then been computed as a function of grain size. Calculations show that the cell output drops considerably for grain size smaller than three times the bulk diffusion length.
A brief review of the major techniques for measuring minority carrier diffusion lengths in solar cells is given. Emphasis is placed on comparing limits of applicability for each method, especially as applied to silicon cells or to gallium arsenide cells, including the effects of radiation damage.
In solar energy utilization studies, correct measurements of flux arriving at other angles to optical axis must be given. Developed device (Cosine diffuser) significantly reduces measurement errors. In combination of radiation transmitter and diffuser co-operating with collimated optical instrument, relative aperture of instrument is filled.
An experimental and theoretical investigation of the feasibility of using the MOS C-V (capacitance-voltage) technique to determine impurity and surface state concentrations on the diffused face of Si solar cells with Ta2O5 coatings. Impurity concentration 10 A from the diffused surface is found to be 2.9 times 10 to the 20th power per cu cm. Charge density in surface and oxide states is 2.1 times 10 to the 13th power per sq cm. These data agree with theoretical predictions.-
The feasibility of using the MOS C-V technique to obtain information regarding impurity and surface state concentrations on the diffused face of silicon solar cells with Ta2O5 coatings is studied. Results indicate that the MOS C-V technique yields useful information concerning surface parameters which contribute to the high, efficiency limiting, surface recombination velocities on the n+ surface of silicon solar cells.