Enhanced Open-Circuit Voltage of Wide-Bandgap Perovskite Photovoltaics by Using Alloyed (FA 1– x Cs x )Pb(I 1– x Br x ) 3 Quantum Dots
We report a detailed study on APbX 3 (A=Formamidinium (FA + ), Cs + ; X=I - , Br - ) perovskite quantum dots (PQDs) with combined A- and X-site alloying that exhibit, both, a wide bandgap and high open circuit voltage (V oc ) for the application of a potential top cell in tandem junction photovoltaic (PV) devices. The nanocrystal alloying affords control over the optical bandgap and is readily achieved by solution-phase cation and anion exchange between previously synthesized FAPbI 3 and CsPbBr 3 PQDs. Increasing only the Br - content of the PQDs widens the bandgap but results in shorter carrier lifetimes and associated Voc losses in devices. These deleterious effects can be mitigated by replacing Cs + with FA + , resulting in wide bandgap PQD absorbers with improved charge-carrier mobility and PVs with higher V oc . Although further device optimization is required, these results demonstrate the potential of FA 1– x Cs x )Pb(I 1– x Br x ) 3 PQDs for wide bandgap perovskite PVs with high V oc .