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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

SurFE-XD (Surface curvature-driven Finite Elements model for Diffusion under eXtreme conditions)

SurFE-XD is a mesoscale finite element framework to model surface diffusion under mutliphysics environments. The code uses legacy C++ library dolphin wrapped with python in a FEniCS driven unified form language and just-in-time (JIT) compilation setting. The purpose of the release is to attract wide-ranging usage of the code along with publication supplementation to support reproducibility of scientific data. SurFE-XD has been originally conceived under the LDRD-DR funding for “High-Gradient (C-BAND) Breakdown tolerant accelerator materials project. Currently SrFE-XD support electrostatics and Thermo-elasticity driven surface diffusion kernels. Releasing the code will also enable to include contributions from other physical regimes e.g., plasticity and electrodynamics etc as well portability to GPU-based platforms.

Bagchi, Soumendu↗
NASA NTRS1973

Enhanced diffusion welding

Surfaces of unrecrystallized alloys are sanded and polished. This is followed by a two-step welding process by which the strength of the parent metal is retained at the weld joint. The first step forces the surfaces into intimate contact at a temperature where the metal still has good ductility. The second step causes diffusion, recrystallization, and grain growth across the original weld interface.

Holko, K. H.↗
NASA NTRS1975

Application of the MOS-C-V technique to determine impurity concentrations and surface parameters on the diffused face of silicon solar cells

The feasibility of using the MOS C-V technique to obtain information regarding impurity and surface state concentrations on the diffused face of silicon solar cells with Ta2O5 coatings is studied. Results indicate that the MOS C-V technique yields useful information concerning surface parameters which contribute to the high, efficiency limiting, surface recombination velocities on the n+ surface of silicon solar cells.

Weinberg, I.↗
NASA NTRS1985

Quantification of the effects of generation volume, surface recombination velocity, and diffusion length on the electron-beam-induced current and its derivative Determination of diffusion lengths in the low micron and submicron ranges

A systematic and quantitative analysis is carried out to investigate the effects of the shape (point, cube, Gaussian) and size of the generation volume, the surface recombination velocity, and the diffusion length on the electron-beam-induced current (EBIC) and its derivative (DEIC). Thick homogeneously doped samples exhibiting diffusion lengths in the low micron and submicron range are considered. The results are presented in computed EBIC curves as a function of scanning distance and of the ratio true diffusion length/effective diffusion length. Shown using these curves are: (1) a simple and yet rigorous method for the determination of the true diffusion length, taking into consideration all of the factors cited above, (2) a method for the rapid determination of the surface recombination velocity, (3) the condition under which the source shape becomes insignificant, and (4) a new value for the lower limit of the diffusion length which can be determined by the EBOC technique.

Luke, K. L.↗
NASA NTRS1979

A calculation of the diffusion energies for adatoms on surfaces of F.C.C. metals

The activation energies for diffusion were determined for gold, platinum and iridium adatoms on plane and plane PT surfaces and were found to be in good agreement with the measurements reported by Bassett and Webber. The Lennard-Jones pair potentials were used to model the interatomic forces, and relaxation of the substrate atoms in near proximity to the adatom was considered in detail. The present calculations clarify the mechanism of the observed two-dimensional diffusion of platinum and iridium atoms on a plane PT surface. The results are compared with those obtained using Morse potential functions and different relaxation techniques.

Halicioglu, T.↗
NASA NTRS1994

Escarpment evolution on high-elevation rifted margins: Insights derived from a surface processes model that combines diffusion, advection and reaction

Experiments with a surface processes model of large-scale (1-1000 km) long-term (1-100 m.y.) erosional denudation are used to establish the controls on the evolution of a model escarpment that is related to the rifting of a continent. The mdoel describes changes in topographic form as a result of sumultaneous short- and long-range mass transport representing hillslope (diffusive) processes and fluvial transport (advection), repsectively. Fluvial entrainment is modeled as a first-order kinetic reaction which reflects the erodibility of the substrate, and therefore the fluvial system is not necessarily carrying at capacity. One dimensional and planform models demonstrate that the principal controls on the evolution of an initially steep model escarpment are (1) antecedent topography/drainage; (2) the timesale (or equivalently a length scale) in the fluvial entrainment reaction; (3) the flexural response of the lithosphere to denudation; and (4) the relative efficiencies of the short- and long-range transport processes. When rainfall and substrate lithology are uniform, a significant amount of discharge draining over the escarpment top causes it to degrade. Only when the top of the model escarpment coincides with a drainage divide can escarpment retreat occur for these conditions. An additional requirement for retreat of a model escarpment without decline is a long reaction time scale for fluvial entrainment. This corresponds to a substrate that is hard to detach by flucial erosion, and therefore to fluvial erosion that is not transport limited. Coninuous backtilting of an escarpment due ot flexural isostatic uplift in response to denudational unloading helps maintain the scarp top as a divide. It is essntial if the escarpment gradient is to be preserved during retreat in a uniform lithology. Low flexural rigidieties propote steep and slowly retreating escarpments. For given rainfall and substrate conditions, the morphology of a retraeating model escarpment is determined by the ratio of hte short-range diffusive and long range advective transport efficiencies. A low ration (which is interpreted to correspond to a more humid, temperate climate) produces a convex upper slope, and concave lower slope morphology and only major escarpments are predicted to preserve a high scarp gradient. Lithological contrasts in hte model produce more complex morphologies and predict the formation of scarps crowned by an erosionaly resistant caprock. However, resistant caprocks are not an essential requirement for model scarps to retreat. We conclude that the inferred controls and model behavior are both consistent with the present-day morphology of rifted continental margins and with modern conceptual models of landscape evolution.

Kooi, Henk↗
DOE OSTI2020

Effect of synthesis temperature on the phase formation of NiTiAlFeCr compositionally complex alloy thin films

Here, the synthesis temperature dependent phase formation of Ni 10 Ti 10 Al 25 Fe 35 Cr 20 thin films is compared to a bulk processed sample of identical composition. The as-cast alloy exhibits a dual-phase microstructure which is composed of a disordered BCC phase and AlNiTi-based B2- and/or L2 1 -ordered phase(s). Formation of the BCC phase as well as an ordered AlNi-based B2 phase is observed for a thin film synthesised at 500 °C (ratio of synthesis temperature of thin film to melting temperature of bulk alloy: T/T m = 0.49), which is attributed to both surface and bulk diffusion mediated growth. Post deposition annealing at 900 °C (T/T m = 0.75) of a thin film deposited without intentional heating results in the formation of NiAlTi-based B2 and/or L2 1 -phase(s) similar to the bulk sample, which is attributed to bulk diffusion. Depositions conducted at room temperature without intentional substrate heating (T/T m = 0.20) resulted in the formation of an X-ray amorphous phase, while a substrate temperature increase to 175 °C (T/T m = 0.28) causes the formation of a BCC phase. Atom probe tomography of the thin films deposited without intentional substrate heating and at 175 °C indicates the formation of ~5 nm and ~10 nm FeAl-rich domains, respectively. This can be rationalized based on the activation energy for surface diffusion, as Ti and Ni exhibt 2.5 to 4 times larger activation energy barriers than Al, Fe and Cr. It is evident from the homologous temperature that the phase formation observed at 500 °C (T/T m = 0.49) is a result of both surface and bulk diffusion. As the temperature is reduced, the formation of FeAl-rich domains can be understood based on the differences in activation energy for surface diffusion and is consistent with kinetically limited thin film growth.

36 MATERIALS SCIENCE↗
NASA NTRS1971

Solutions for Reacting and Nonreacting Viscous Shock Layers with Multicomponent Diffusion and Mass Injection

Numerical solutions are presented for the viscous shocklayer equations where the chemistry is treated as being either frozen, equilibrium, or nonequilibrium. Also the effects of the diffusion model, surface catalyticity, and mass injection on surface transport and flow parameters are considered. The equilibrium calculations for air species using multicomponent: diffusion provide solutions previously unavailable. The viscous shock-layer equations are solved by using an implicit finite-difference scheme. The flow is treated as a mixture of inert and thermally perfect species. Also the flow is assumed to be in vibrational equilibrium. All calculations are for a 45 deg hyperboloid. The flight conditions are those for various altitudes and velocities in the earth's atmosphere. Data are presented showing the effects of the chemical models; diffusion models; surface catalyticity; and mass injection of air, water, and ablation products on heat transfer; skin friction; shock stand-off distance; wall pressure distribution; and tangential velocity, temperature, and species profiles.

Moss, J. N.↗
DOE OSTI2021

An Analysis of the Impact of Particle Growth on Transport Losses in Polymer-Electrolyte Fuel Cells

Voltage cycling causes catalyst nanoparticles in polymer-electrolyte fuel cells to grow. The concomitant loss of interfacial area results in larger kinetic, transport, and possibly ohmic overpotentials. This paper uses recently published experimental data and mathematical models to investigate the evolutions of transport and ohmic resistances to platinum nanoparticles located on the surface and inside the micropores of carbon black supports. Resistance to oxygen transport rises as surface area declines primarily because the flux to each remaining larger platinum particle increases. The path lengths governing oxygen diffusion to surface and buried platinum sites also increase as nanoparticles grow. Platinum nanoparticles on the surface become relatively less favorable as voltage cycling proceeds because they grow faster than platinum in micropores. Because voltage cycling causes total interfacial area to decline, and the fraction located inside micropores to increase, nanoscale ohmic losses increase as a catalyst layer decays. The practical importance of this effect is difficult to discern because proton conductivity in carbon micropores is not well characterized.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2022

Novel and effective surface passivation for high efficiency n- and p-type Silicon solar cell

The project objective was to develop a novel Si surface passivation method using chalcogens, sulfur (S) and/or selenium (Se), as passivating elements, to withstand industry-standard high temperature contacting and metallization schemes for p-type Si based passivated emitter and rear contact (p-PERC) solar cells. The back surface passivation of PERC cells has been improved drastically with the invention and successful application of an Al 2 O 3 passivation layer. However, the front n + diffused junction surface is still poorly passivated by the standard amorphous silicon nitride (SiNx) anti-reflection coating (ARC) layer. This project sought to address the passivation challenges of both front n+ emitter and undiffused p-Si back surface. Improved p-PERC solar cell performance with open circuit voltage (V OC ) > 680 mV and efficiency of 22% were targeted to validate superior defect passivation properties as compared to standard SiO 2 / Al 2 O 3 passivation. During this project, we systematically investigated process-structure-properties-performance relationships of this novel advanced defect passivation approach. The S/Se passivation was carried out by reacting industrial Czochralski (Cz) Si wafers in H 2 S and H 2 Se gases in a chemical vapor deposition (CVD) reactor at temperatures up to 700°C. After an exhaustive optimization of the process parameters (temperature, time, and gas concentration), we established an optimized process and demonstrated extremely low surface recombination velocities (SRVs) of 1.5 cm/s and 8 cm/s on n-type and p-type Si, respectively, by S-passivation. In-depth surface and interface characterization were performed using soft x-ray and photoelectron spectroscopies (XPS, UPS, XES), combined with capacitance-voltage-frequency (C-V-f) measurements, to decipher the surface chemical/electronic structure and interface defect state densities. These measurements provided critical understanding of the defect passivation mechanism and elucidated the presence of surface S-Si bonds, a reduction of surface dipoles, and low interface state densities (D it ) < 10 11 cm -2 ev -1 . We also found that the Se-passivation is inferior to the S-passivation (by at least one order of magnitude in SRV). Application of the optimized S-passivation to the n+ diffused emitter surface led to a low surface recombination current density, J0 ≈ 40 fA/cm 2 (~ 1/4 of the industry-standard SiNx-passivation), and high implied V OC (686 mV) in p-PERC solar cell structures. The S-passivation process also was found to improve the bulk quality of the p-type Si, better than the SiO 2 or Al 2 O 3 passivation processes. After successful demonstration of efficient passivation of Si surface defects by S, we extensively studied the air, thermal, and illumination stability of the passivation structure. S-passivation itself degrades in air due to competing reactions with moisture and oxygen to form oxides, which can be eliminated by a SiNx capping layer (also acting as a anti-reflective coating). After SiNx process optimization, we demonstrated illumination and thermally stable S-passivation with SRV < 5 cm/s and J 0 < 80 fA/cm 2 . These enhancements in Si passivation, incorporated into p-PERC cells, achieved an efficiency of 19.93% with V OC = 649 mV, using manufacturing metallization and contacting schemes. The low cell performance (cell V OC is much less than the implied V OC = 686 mV, anticipated from surface passivation) was identified due to degradation of S-passivation during the metal firing step (out-diffusion of S from the Si interface to the SiNx surface). The S-passivation of Si surfaces shows significant promise with excellent passivation quality, essential for high performance (high V OC , high efficiency) solar cells. Integration of this innovative defect passivation into devices, however, demands further development of the capping layer, low temperature (<700°C) metallization process, and/or engineering of advanced device structures. Surface passivation-dominated advanced Si solar cells, such as tunnel oxide passivated contacts and Si heterojunctions, are increasingly of interest due to their high-performance potential and will have a growing photovoltaic market share in the near future.

14 SOLAR ENERGY↗
NASA NTRS1977

Surface recombination velocity and diffusion length of minority carriers in heavily doped silicon layers

Quantitative analysis of the electron beam-induced current and the dependence of the effective diffusion length of the minority carriers on the penetration depth of the electron beam were employed for the analysis of the carrier recombination characteristics in heavily doped silicon layers. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two dimensional mapping of the surface recombination velocity of P-diffused Si layers will be presented together with a three dimensional mapping of minority carrier lifetime in ion implanted Si. Layers heavily doped with As exhibit improved recombination characteristics as compared to those of the layers doped with P.

Gatos, H. C.↗
DOE OSTI2020

Oligomeric Ruthenium Polypyridyl Dye for Improved Stability of Aqueous Photoelectrochemical Cells

Water-splitting dye-sensitized photoelectrochemical cells rely on molecular sensitizers to harvest light energy and drive the catalytic reactions necessary to generate hydrogen and oxygen from water. The desorption of sensitizer molecules from the semiconductor–aqueous electrolyte interface is a significant barrier to the practical implementation of these cells. To address this problem, we synthesized an oligomeric ruthenium dye ([RuP] n ) that has dramatically improved stability as a photosensitizer for TiO 2 electrodes over the pH range of interest (4–7.8) for DSPECs. Additionally, the efficiency of photoelectrochemical charge separation is known to depend on the rate of cross-surface hole diffusion between dye molecules. The oligomeric dye ([RuP] n ) shows an order of magnitude faster cross-surface hole diffusion than the commonly used monomeric [Ru(bpy) 2 (4,4-PO 3 H 2 ) 2 bpy] 2+ (RuP) sensitizer. Finally, the enhanced stability of the polymeric dye also enables the use of intensity-modulated photovoltage spectroscopy to measure the recombination rate of photogenerated electrons and holes as a function of electrolyte pH.

14 SOLAR ENERGY↗
NASA NTRS1982

Radar scattering from a diffuse vegetation layer over a smooth surface

A simple model is presented for the oblique backscatter and bistatic scatter from a smooth surface overlain by a diffuse layer. Only single scattering in the diffuse layer is taken into account. The model analysis shows that the combination of volume scattering and oblique reflection at the surface may increase appreciably the waves scattering. The scattering strongly depends on the properties of the smooth surface. These results support some of the observations made with the Seasat spaceborne imaging radar over flooded regions with heavy vegetation cover.

Engheta, N.↗
DOE OSTI2025

Time-Domain Extreme-Ultraviolet Diffuse Scattering Spectroscopy of Nanoscale Surface Phonons

Here, we report the observation of dynamic fringe patterns in the diffuse scattering of extreme ultraviolet light from surfaces, following femtosecond optical excitation. At each point on the detector, the diffuse scattering intensity exhibits oscillations at well-defined frequencies that correspond to surface phonons with wave vectors determined by the scattering geometry, indicating that the optical excitation generates coherent surface phonons propagating in all directions and spanning a wavelength range from 60 to 300 nm. This phenomenon is observed on a variety of samples, including single-layer and multilayer metal films, as well as bulk semiconductors. The measured surface phonon dispersions show good agreement with theoretical calculations. By comparing signal amplitudes from samples with different surface morphologies, we find that the excitation mechanism is linked to the natural surface roughness of the samples. However, the signal is still detectable on extremely smooth surfaces with subnanometer roughness. Our findings demonstrate a simple and effective method for optically exciting coherent surface phonons with nanoscale wavelengths on a wide range of solid samples and establish a foundation for surface phonon spectroscopy in a wave vector range well beyond the limit of conventional surface Brillouin scattering.

Capotondi, F. [Elettra-Sincrotrone Trieste (Italy)↗
DOE OSTI2021

Adapting confocal Raman microscopy for in situ studies of redox transformations at electrode-electrolyte interfaces

Confocal Raman microscopy was applied to quantify redox species present within the diffusion layer adjacent to an electrode surface under potentiostatic control. A glass microscope coverslip with a thin indium tin oxide (ITO) coating served as both the working electrode and optical window for a microscope-stage mountable spectroelectrochemical cell. A high numerical aperture objective mounted in an inverted microscope frame just below the stage brought excitation radiation through the coverslip window and to a tight focus a few micrometers above the ITO film surface. Species diffusing into the confocal probe volume defined by the excitation beam focus and the collected light region were detected, identified and quantified based on their Raman scattering frequencies and intensities. Here, in measurements that interrogated the interconversion of ferrocyanide and ferricyanide ions as a function of applied voltage, least-squares regression analysis of spectral datasets predicted the formal potential and relative surface concentrations of the ions in good agreement with the expected Nernstian response. Preliminary studies of methyl viologen reduction at an ITO film/Nafion membrane interface were conducted and show the possibility for estimation of mass transport coefficients of redox species within ionic polymer materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

NETL Electrical Conductivity Relaxation(ECR) Analysis Tool

This application was developed within the solid oxide fuel cell (SOFC) work plan. It calculates the oxygen surface exchange coefficient (k) and oxygen diffusion coefficient (D) for an oxide sample using electrical conductivity relaxation (ECR) data. The tool also produces a heat map showing the associated uncertainty in fitting the ECR data for given pairs of k and D values, so the user can determine the most likely range of k and D values for the tested values. Multiple datasets for the same material can be plotted to decrease uncertainty. The tool can also simulate ECR curves for inputted k and D values and overlay the simulated curves with experimental data for comparison.

electrical conductivity relaxation↗