Effects of Junction Capacitances and Commutation Loops Associated With Line-Frequency Devices in Three-Level AC/DC Converters
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Bo Liu↗
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Acceleration of Electrical Capacitance Volume Tomography Imaging by Fourier-Based Sparse Representations
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Cagdas Gunes↗
Toward Multiphase Flow Decomposition Based on Electrical Capacitance Tomography Sensors
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Rafiul K. Rasel↗
Ice detector
An ice detector is provided for the determination of the thickness of ice on the outer surface on an object (e.g., aircraft) independently of temperature or the composition of the ice. First capacitive gauge, second capacitive gauge, and temperature gauge are embedded in embedding material located within a hollowed out portion of the outer surface. This embedding material is flush with the outer surface to prevent undesirable drag. The first capacitive gauge, second capacitive gauge, and the temperature gauge are respectively connected to first capacitive measuring circuit, second capacitive measuring circuit, and temperature measuring circuit. The geometry of the first and second capacitive gauges is such that the ratio of the voltage outputs of the first and second capacitance measuring circuits is proportional to the thickness of ice, regardless of ice temperature or composition. This ratio is determined by offset and dividing circuit.
Weinstein, Leonard M.↗
Superlattice barrier varactors
SBV (Single Barrier Varactor) diodes have been proposed as alternatives to Schottky barrier diodes for harmonic multiplier applications. However, these show a higher current than expected. The excess current is due to X valley transport in the barrier. We present experimental results showing that the use of a superlattice barrier and doping spikes in the GaAs depletion regions on either side of the barrier can reduce the excess current and improve the control of the capacitance vs. voltage characteristic. The experimental results consist of data taken from two types of device structures. The first test structure was used to study the performance of AlAs/GaAs superlattice barriers. The wafer was fabricated into 90 micron diameter mesa diodes and the resulting current vs. voltage characteristics were measured. A 10 period superlattice structure with a total thickness of approximately 400 A worked well as an electron barrier. The structure had a current density of about one A/sq cm at one volt at room temperature. The capacitance variation of these structures was small because of the design of the GaAs cladding layers. The second test structure was used to study cladding layer designs. These wafers were InGaAs and InAlAs layers lattice matched to an InP substrate. The layers have n(+) doping spikes near the barrier to increase the zero bias capacitance and control the shape of the capacitance vs. voltage characteristic. These structures have a capacitance ratio of 5:1 and an abrupt change from maximum to minimum capacitance. The measurements were made at 80 K. Based on the information obtained from these two structures, we have designed a structure that combines the low current density barrier with the improved cladding layers. The capacitance and current-voltage characteristics from this structure are presented.
Raman, C.↗
3-D capaciflector
A capacitive type proximity sensor having improved range and sensitivity between a surface of arbitrary shape and an intruding object in the vicinity of the surface having one or more outer conductors on the surface which serve as capacitive sensing elements shaped to conform to the underlying surface of a machine. Each sensing element is backed by a reflector driven at the same voltage and in phase with the corresponding capacitive sensing element. Each reflector, in turn, serves to reflect the electric field lines of the capacitive sensing element away from the surface of the machine on which the sensor is mounted so as to enhance the component constituted by the capacitance between the sensing element and an intruding object as a fraction of the total capacitance between the sensing element and ground. Each sensing element and corresponding reflecting element are electrically driven in phase, and the capacitance between the sensing elements individually and the sensed object is determined using circuitry known to the art. The reflector may be shaped to shield the sensor and to shape its field of view, in effect providing an electrostatic lensing effect. Sensors and reflectors may be fabricated using a variety of known techniques such as vapor deposition, sputtering, painting, plating, or deformation of flexible films, to provide conformal coverage of surfaces of arbitrary shape.
Vranish, John M.↗
Electrically Variable or Programmable Nonvolatile Capacitors
Electrically variable or programmable capacitors based on the unique properties of thin perovskite films are undergoing development. These capacitors show promise of overcoming two important deficiencies of prior electrically programmable capacitors: Unlike in the case of varactors, it is not necessary to supply power continuously to make these capacitors retain their capacitance values. Hence, these capacitors may prove useful as components of nonvolatile analog and digital electronic memories. Unlike in the case of ferroelectric capacitors, it is possible to measure the capacitance values of these capacitors without changing the values. In other words, whereas readout of ferroelectric capacitors is destructive, readout of these capacitors can be nondestructive. A capacitor of this type is a simple two terminal device. It includes a thin film of a suitable perovskite as the dielectric layer, sandwiched between two metal or metal oxide electrodes (for example, see Figure 1). The utility of this device as a variable capacitor is based on a phenomenon, known as electrical-pulse-induced capacitance (EPIC), that is observed in thin perovskite films and especially in those thin perovskite films that exhibit the colossal magnetoresistive (CMR) effect. In EPIC, the application of one or more electrical pulses that exceed a threshold magnitude (typically somewhat less than 1 V) gives rise to a nonvolatile change in capacitance. The change in capacitance depends on the magnitude duration, polarity, and number of pulses. It is not necessary to apply a magnetic field or to cool the device below (or heat it above) room temperature to obtain EPIC. Examples of suitable CMR perovskites include Pr(1-x)Ca(x)MnO3, La(1-x)S-r(x)MnO3,and Nb(1-x)Ca(x)MnO3. Figure 2 is a block diagram showing an EPIC capacitor connected to a circuit that can vary the capacitance, measure the capacitance, and/or measure the resistance of the capacitor.
Shangqing, Liu↗
Computational and Experimental Study of Li-doped Ionic Liquids at Electrified Interfaces
We evaluate the influence of Li-salt doping on the dynamics, capacitance, and structure of three ionic liquid electrolytes, [pyr14][TFSI], [pyr13][FSI], and [EMIM][BF4], using molecular dynamics and polarizable force fields. In this respect, our focus is on the properties of the electric double layer (EDL) formed by the electrolytes at the electrode surface as a function of surface potential (Psi). The rates of EDL formation are found to be on the order of hundreds of picoseconds and only slightly influenced by the addition of Li-salt. The EDLs of three electrolytes are shown to have different energy storage capacities, which we relate to the EDL formation free energy. The differential capacitance obtained from our computations exhibits asymmetry about the potential of zero charge and is consistent with the camel-like profiles noted from mean field theories and experiments on metallic electrodes. The introduction of Li-salt reduces the noted asymmetry in the differential capacitance profile. Complementary experimental capacitance measurements have been made on our three electrolytes in their neat forms and with Li-salt. The measurements, performed on glassy carbon electrodes, produce U-like profiles, and Li-salt doping is shown to strongly affect capacitance at high magnitudes of Psi. Differences in the theoretical and experimental shapes and magnitudes of capacitance are rationalized in terms of the electrode surface and pseudocapacitive effects. In both neat and Li-doped liquids, the details of the computational capacitance profile are well described by Psi-induced changes in the density and molecular orientation of ions in the molecular layer closest to the electrode. Our results suggest that the addition of Li+ induces disorder in the EDL, which originates from the strong binding of anions to Li+. An in-depth analysis of the distribution of Li+ in the EDL reveals that it does not readily enter the molecular layer at the electrode surface, preferring instead to be localized farther away from the surface in the second molecular layer. This behavior is validated through an analysis of the free energy of Li+ solvation as a function of distance from the electrode. Free energy wells are found to coincide with localized concentrations of Li+, the depths of which increase with Psi and suggest a source of impedance for Li+ to reach the electrode.
Haskins, Justin B.↗
Microfabricated Ice-Detection Sensor
Knowledge of ice conditions on important aircraft lift and control surfaces is critical for safe operation. These conditions can be determined with conventional ice-detection sensors, but these sensors are often expensive, require elaborate installation procedures, and interrupt the airflow. A micromachined, silicon-based, flush-mounted sensor which generates no internal heat has been designed, batch fabricated, packaged, and tested. The sensor is capable of distinguishing between an ice-covered and a clean surface. It employs a bulk micromachined wafer with a 7 micrometer-thick, boron-doped, silicon diaphragm which serves as one plate of a parallel-plate capacitor. This is bonded to a second silicon wafer which contains the fixed electrodes, one to drive the diaphragm by application of a voltage, the other to measure the deflection by a change in capacitance. The diaphragm sizes ranged from 1x1 mm to 3x3 mm, and the gap between parallel-plate capacitors is 2 micrometers. A 200 V d.c. was applied to the driving electrode which caused the capacitance to increase approximately 0.6pf, from a nominal capacitance of 0.6pf, when the surface was ice free. After the sensor was cooled below the freezing point of water, the same voltage range was applied to the drive electrode. The capacitance increased by the same amount. Then a drop of water was placed over the diaphragm and allowed to freeze. This created an approximately 2mm-thick ice layer. The applied 200V d.c. produced no change in capacitance, confirming that the diaphragm was locked to the ice layer. Since the sensor uses capacitive actuation, it uses very little power and is an ideal candidate for inclusion in a wireless sensing system.
DeAnna, Russell G.↗
A Technique for Increasing the Sensitivity of a Solid-State Fission Probe
A small silicon p-n junction wafer, when coated with uranium 235, can be used as a compact fission probe for low power flux and power mapping. Because of the inverse relation between the magnitude of a neutron-induced fission pulse and the inherent capacitance of the detecting element (capacitance is proportional to area), the size, and hence the sensitivity, of the semiconductor detector has been limited. New developments in the field of semiconductor detectors have made it possible to fabricate large area detectors which are essentially free from the capacitance effect. However, preliminary results indicate that they are much more susceptible to radiation damage than the detectors described in this report and as such may not be suitable for flux mapping. increasing the sensitivity cannot be accomplished by simply fabricating a larger detector. It has been observed that by combining the silicon p-n junction wafers in a series configuration the capacitance effect can be bypassed, and a fission probe can be made with a resultant increase in sensitivity by a factor of ten while sustaining only a minor decrease in pulse height. Analysis further indicates that for n silicon wafers in series, if n(C(sub i)) + C(sub c)/C(sub b) less than 0.1 where C(sub i) and C(sub c) are the preamplifier input and cable capacitances, respectively, and C(sub b) is the junction capacitance of a single silicon wafer, there should be no substantial reduction in pulse height due to series circuitry.
Steinberg, Robert↗
Two-Phase Quality/Flow Meter
A quality and/or flow meter employs a capacitance probe assembly for measuring the dielectric constant of flow stream, particularly a two-phase flow stream including liquid and gas components.ne dielectric constant of the flow stream varies depending upon the volume ratios of its liquid and gas components, and capacitance measurements can therefore be employed to calculate the quality of the flow, which is defined as the volume ratio of liquid in the flow to the total volume ratio of gas and liquid in the flow. By using two spaced capacitance sensors, and cross-correlating the time varying capacitance values of each, the velocity of the flow stream can also be determined. A microcontroller-based processing circuit is employed to measure the capacitance of the probe sensors.The circuit employs high speed timer and counter circuits to provide a high resolution measurement of the time interval required to charge each capacitor in the probe assembly. In this manner, a high resolution, noise resistant, digital representation of each of capacitance value is obtained without the need for a high resolution A/D converter, or a high frequency oscillator circuit. One embodiment of the probe assembly employs a capacitor with two ground plates which provide symmetry to insure that accurate measurements are made thereby.
Moerk, J. Steven↗
High-Voltage, Asymmetric-Waveform Generator
The shapes of waveforms generated by commercially available analytical separation devices, such as some types of mass spectrometers and differential mobility spectrometers are, in general, inadequate and result in resolution degradation in output spectra. A waveform generator was designed that would be able to circumvent these shortcomings. It is capable of generating an asymmetric waveform, having a peak amplitude as large as 2 kV and frequency of several megahertz, which can be applied to a capacitive load. In the original intended application, the capacitive load would consist of the drift plates in a differential-mobility spectrometer. The main advantage to be gained by developing the proposed generator is that the shape of the waveform is made nearly optimum for various analytical devices requiring asymmetric-waveform such as differential-mobility spectrometers. In addition, this waveform generator could easily be adjusted to modify the waveform in accordance with changed operational requirements for differential-mobility spectrometers. The capacitive nature of the load is an important consideration in the design of the proposed waveform generator. For example, the design provision for shaping the output waveform is based partly on the principle that (1) the potential (V) on a capacitor is given by V=q/C, where C is the capacitance and q is the charge stored in the capacitor; and, hence (2) the rate of increase or decrease of the potential is similarly proportional to the charging or discharging current. The proposed waveform generator would comprise four functional blocks: a sine-wave generator, a buffer, a voltage shifter, and a high-voltage switch (see Figure 1). The sine-wave generator would include a pair of operational amplifiers in a feedback configuration, the parameters of which would be chosen to obtain a sinusoidal timing signal of the desired frequency. The buffer would introduce a slight delay (approximately equal to 20 ns) but would otherwise leave the fundamental timing signal unchanged. The buffered timing signal would be fed as input to the level shifter. The output of the level shifter would serve as a timing and control signal for the high-voltage switch, causing the switch to alternately be (1) opened, allowing the capacitive load to be charged from a high-voltage DC power supply; then (2) closed to discharge the capacitive load to ground. Hence, the output waveform would closely approximate a series of exponential charging and discharging curves (see Figure 2).
Beegle, Luther W.↗
Evaluation of Methods for Molecular Dynamics Simulation of Ionic Liquid Electric Double Layers
We investigate how systematically increasing the accuracy of various molecular dynamics modeling techniques influences the structure and capacitance of ionic liquid electric double layers (EDLs). The techniques probed concern long-range electrostatic interactions, electrode charging (constant charge versus constant potential conditions), and electrolyte polarizability. Our simulations are performed on a quasi-two-dimensional, or slab-like, model capacitor, which is composed of a polarizable ionic liquid electrolyte, [EMIM][BF4], interfaced between two graphite electrodes. To ensure an accurate representation of EDL differential capacitance, we derive new fluctuation formulas that resolve the differential capacitance as a function of electrode charge or electrode potential. The magnitude of differential capacitance shows sensitivity to different long-range electrostatic summation techniques, while the shape of differential capacitance is affected by charging technique and the polarizability of the electrolyte. For long-range summation techniques, errors in magnitude can be mitigated by employing two-dimensional or corrected three dimensional electrostatic summations, which lead to electric fields that conform to those of a classical electrostatic parallel plate capacitor. With respect to charging, the changes in shape are a result of ions in the Stern layer (i.e. ions at the electrode surface) having a higher electrostatic affinity to constant potential electrodes than to constant charge electrodes. For electrolyte polarizability, shape changes originate from induced dipoles that soften the interaction of Stern layer ions with the electrode. The softening is traced to ion correlations vertical to the electrode surface that induce dipoles that oppose double layer formation. In general, our analysis indicates an accuracy dependent differential capacitance profile that transitions from the characteristic camel shape with coarser representations to a more diffuse profile with finer representations.
Haskins, Justin B.↗
Fabrication and optimization of a whiskerless Schottky barrier diode for submillimeter wave applications
The following accomplishments were made towards the goal of an optimized whiskerless diode chip for submillimeter wavelength applications. (1) Surface channel whiskerless diode structure was developed which offers excellent DC and RF characteristics, reduced shunt capacitance and simplified fabrication compared to mesa and proton isolated structures. (2) Reliable fabrication technology was developed for the surface channel structure. The new anode plating technology is a major improvement. (3) DC and RF characterization of the surface channel diode was compared with whisker contacted diodes. This data indicates electrical performance as good as the best reported for similar whisker contacted devices. (4) Additional batches of surface channel diodes were fabricated with excellent I-V and reduced shunt capacitance. (5) Large scale capacitance modelinng was done for the planar diode structure. This work revealed the importance of removing the substrate gallium arsenide for absolute minimum pad capacitance. (6) A surface channel diode was developed on quartz substrate and this substrate was completely removed after diode mounting for minimum parasitic capacitance. This work continues with the goal of producing excellent quality submillimeter wavelength planar diodes which satisfy the requirements of easy handling and robustness. These devices will allow the routine implementation of Schottky receivers into space-based applications at frequencies as high as 1 THz, and, in the future, beyond.
Bishop, W.↗
Silicon micromachined accelerometer/seismometer and method of making the same
A silicon-based microaccelerometer for seismic application is provided using a low-resonant frequency (10 Hz), large proof mass (1 gram), and high Q suspension to achieve high sensitivity of less than 1 ng with a bandwidth a 0.05 to 50 Hz. The proof mass is cut away from a planar substrate in the form of a disk using abrasive cutting, which disk closely fits but does not touch a surrounding angular frame. The spring of the microaccelerometer between the angular frame and the proof mass is provided from two continuous, 3 microns thick membranes. The fixed capacitive electrodes are provided on separate, subsequently bonded substrates, and movable capacitive plates are provided on the membranes. By fabricating capacitive plates on the separate substrates, the gap between the fixed and movable capacitive plates in the differential capacitive sensor is closely controlled. The use of continuous membranes for the spring produces a shock resistant, robust sensor.
Martin, Richard D.↗
Capacitor-Chain Successive-Approximation ADC
A proposed successive-approximation analog-to-digital converter (ADC) would contain a capacitively terminated chain of identical capacitor cells. Like a conventional successive-approximation ADC containing a bank of binary-scaled capacitors, the proposed ADC would store an input voltage on a sample-and-hold capacitor and would digitize the stored input voltage by finding the closest match between this voltage and a capacitively generated sum of binary fractions of a reference voltage (Vref). However, the proposed capacitor-chain ADC would offer two major advantages over a conventional binary-scaled-capacitor ADC: (1) In a conventional ADC that digitizes to n bits, the largest capacitor (representing the most significant bit) must have 2(exp n-1) times as much capacitance, and hence, approximately 2(exp n-1) times as much area as does the smallest capacitor (representing the least significant bit), so that the total capacitor area must be 2(exp n) times that of the smallest capacitor. In the proposed capacitor-chain ADC, there would be three capacitors per cell, each approximately equal to the smallest capacitor in the conventional ADC, and there would be one cell per bit. Therefore, the total capacitor area would be only about 3(exp n) times that of the smallest capacitor. The net result would be that the proposed ADC could be considerably smaller than the conventional ADC. (2) Because of edge effects, parasitic capacitances, and manufacturing tolerances, it is difficult to make capacitor banks in which the values of capacitance are scaled by powers of 2 to the required precision. In contrast, because all the capacitors in the proposed ADC would be identical, the problem of precise binary scaling would not arise.
Cunningham, Thomas↗
Complex polycation redox material interfaced with renewable porous carbon for asymmetric supercapacitors
Mixed polycation transition metal ferrites are known to exhibit unique and superior characteristics for structural, electrical, magnetic, and optical applications. Although a few binary transition metal ferrites are found to be suitable for electrochemical energy storage application, ternary transition metal ferrites are not investigated for asymmetric supercapacitors (ASCs). Mixed polycation oxides are expected to have increased active sites that can facilitate proton and electron transfer impacting the redox reactions. Specific crystal structure and associated lattice parameters as well as surface and morphological characteristics can also influence the energy storage properties. This study for the first time reports a novel complex polycation redox material, (Cu p Mn q Zn r ) x Fe y O z and renewable pinewood (PW) derived porous carbon (POC) as electrodes for ASC. Both (Cu p Mn q Zn r ) x Fe y O z and PW-POC are subjected to electrochemical characterization and used in ASC configuration with aqueous KOH electrolyte. It is anticipated that the Faradaic characteristics of (Cu p Mn q Zn r ) x Fe y O z will make it to serve as a cathode while PW-POC with capacitive behavior will act as anode in ASCs. Relatively higher specific capacitance of > 200 F/g is observed for the (Cu p Mn q Zn r ) x Fe y O z reference electrode and fabricated ASCs. Capacitance retention rate is tested in 10,000 cycles for the working electrodes whereas for ASC, the stability tests are performed over 100 charging-discharging cycles exhibiting relatively higher capacitance retention. (Cu p Mn q Zn r ) x Fe y O z appears to be a promising material for a supercapacitor.
(CupMnqZnr)xFeyOz↗
Fabrication of Large-Area Metal-on-Carbon Catalytic Condensers for Programmable Catalysis
Catalytic condensers stabilize charge on either side of a high-k dielectric film to modulate the electronic states of a catalytic layer for the electronic control of surface reactions. Here, carbon sputtering provided for fast, large-scale fabrication of metal–carbon catalytic condensers required for industrial application. Carbon films were sputtered on HfO 2 dielectric/p-type Si with different thicknesses (1, 3, 6, and 10 nm), and the enhancement of conductance and capacitance of carbon films was observed upon increasing the carbon thickness following thermal treatment at 400 °C. After Pt deposition on the carbon films, the Pt catalytic condenser exhibited a high capacitance of ∼210 nF/cm 2 that was maintained at a frequency ∼1000 Hz, satisfying the requirement for a dynamic catalyst to implement catalytic resonance. Temperature-programmed desorption of carbon monoxide yielded CO desorption peaks that shifted in temperature with the varying potential applied to the condenser (−6 or +6 V), indicating a shift in the binding energy of carbon monoxide on the Pt condenser surface. A substantial increase in capacitance (∼2000 nF/cm 2 ) of the Pt-on-carbon devices was observed at elevated temperatures of 400 °C that can modulate ∼10% of charge per metal atom when 10 V potential was applied. A large catalytic condenser of 42 cm 2 area Pt/C/HfO 2 /Si exhibited a high capacitance of 9393 nF with a low leakage current/capacitive current ratio (<0.1), demonstrating the practicality and versatility of the facile, large-scale fabrication method for metal–carbon catalytic condensers.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗