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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Carrier synchronization techniques for unbalanced QPSK signals. I

This paper uses MAP estimation techniques to obtain carrier reconstruction circuits for unbalanced QPSK signals. In addition, the performance analysis of these circuits is carried out to the extent that a loop design can proceed. Numerical results are presented in order to demonstrate the utility of the theory developed. This signal design will be used in the development of the Tracking and Data Relay Satellite System (TDRSS) and the Navigation Satellite Timing and Ranging Global Positioning System (NAVSTAR GPS).

Braun, W. R.↗
NASA NTRS1977

Shuttle carrier aircraft flight tests

Since the Space Shuttle will need to be transported from its place of assembly to the launch site, a method has been developed whereby the Shuttle rides piggyback on a modified Boeing 747, called the Shuttle carrier aircraft (SCA). This paper describes tests of the SCA in its mated configuration. Tests include: flutter, found to decrease when fiberglass and wood fairings were added to the base of each supporting pylon; stability and control, found to be acceptable after damping with control pulses; noise and buffet, found high but acceptable; and climb, in which drag was marked but acceptable with the special rated thrust (SRT) power setting. Simulated launch maneuvers were undertaken at an airspeed of 273 KCAS. Transport of the Shuttle takes place with the Shuttle tail cone on, at a cruise speed of 288 KCAS at an altitude of 22,000 feet.

Fulton, F. L., Jr.↗
NASA NTRS1978

Interpretation of scanning electron microscope measurements of minority carrier diffusion lengths in semiconductors

In scanning electron microscope (SEM) injection measurements of minority carrier diffusion lengths some uncertainties of interpretation exist when the response current is nonlinear with distance. This is significant in epitaxial layers where the layer thickness is not large in relation to the diffusion length, and where there are large surface recombination velocities on the incident and contact surfaces. An image method of analysis is presented for such specimens. A method of using the results to correct the observed response in a simple convenient way is presented. The technique is illustrated with reference to measurements in epitaxial layers of GaAs. Average beam penetration depth may also be estimated from the curve shape.

Flat, A.↗
NASA NTRS1978

Effect of grain boundaries in silicon on minority-carrier diffusion length and solar-cell efficiency

The spatial variation of minority-carrier diffusion length in the vicinity of a grain boundary for a polycrystalline silicon sheet has been measured by the use of the EBIC technique. The effect of such a variation on solar-cell output has then been computed as a function of grain size. Calculations show that the cell output drops considerably for grain size smaller than three times the bulk diffusion length.

Daud, T.↗
NASA NTRS1979

On the optimality of the MAP estimation loop for carrier phase tracking BPSK and QPSK signals

Starting with MAP estimation theory as a basis for optimally estimating carrier phase of BPSK and QPSK modulations, it is shown in this paper that the closed loop phase trackers, which are motivated by this approach, are indeed closed loop optimum in the minimum mean-square phase tracking jitter sense. The corresponding squaring loss performance of these so-called MAP estimation loops is compared with that of more practical implementations wherein the hyperbolic tangent nonlinearity is approximated by simpler functions.

Simon, M. K.↗
NASA NTRS1981

Improving MOS minority-carrier lifetime

Fluorine implantation increases minority-carrier lifetime in silicon by factor of 100, enhancing power efficiency in MOS applications. Implantation does not increase microdefects at silicon surface when thin oxide layers are grown, and process gathers existing impurities near surface without adversely affecting MOS electrical parameters. With these advantages, fluorine may be left on wafer surfaces after processing.

Cockrum, R. H.↗
NASA NTRS1980

The determination of transport parameters of minority carriers in n-p junctions by means of an electron microscope - Critique of recent developments

It has recently been shown that amplitude modulated electron beams provide a novel means for the determination of minority carrier lifetimes, diffusion lengths, etc., in n-p junctions. In this paper it is shown that: (1) a recently published analysis based on a cylindrically symmetric configuration is incorrect, (2) the correct approach leads to a system of dual integral equations for which the formal solution is given, (3) in general, the short circuit current can only be determined by means of extensive computer calculations except in the case of large front surface recombination velocities, and (4) the difficulties encountered with cylindrically symmetric configurations (circular ohmic contacts and the like) are completely avoided with a choice of a planar geometry since simple closed form expressions for the short circuit current are readily available in this case.

Von Roos, O.↗
NASA NTRS1981

The use of total simulator training in transitioning air-carrier pilots: A field evaluation

A field study was conducted in which the performance of air carrier transitioning pilots who had landing training in a landing maneuver approved simulator was compared with the performance of pilots who had landing training in the aircraft. Forty-eight trainees transitioning to the B-727 aircraft and eighty-seven trainees transitioning to the DC-10 were included in the study. The study results in terms of both objectively measured performance indicants and observer and check-pilot ratings did not demonstrate a clear distinction between the two training groups. The results suggest that, for these highly skilled transitioning pilots, a separate training module in the aircraft may be of dubious value.

Randle, R. J., Jr.↗
NASA NTRS1981

Ion plume/S-band carrier interaction study

A study was performed to determine the effects of a mercury ion thruster plume on an S-band telecommunication carrier. Experiments were carried out on a 30 cm thruster in a JPL test chamber. Results from simple analytical models were compared with the above measurements and major discrepancies were discovered. Modifications to the electron density model provided a qualitative explanation, but further work is necessary for a quantitative answer. The results indicate the effects of the plume, on S and X Band telecommunications will be minor, with the possible exception of critical angle blockage.

Stanton, P.↗
NASA NTRS1981

Telemetry degradation due to a CW RFI induced carrier tracking error for the block IV receiving system with maximum likelihood convolution decoding

Models to characterize the behavior of the Deep Space Network (DSN) Receiving System in the presence of a radio frequency interference (RFI) are considered. A simple method to evaluate the telemetry degradation due to the presence of a CW RFI near the carrier frequency for the DSN Block 4 Receiving System using the maximum likelihood convolutional decoding assembly is presented. Analytical and experimental results are given.

Sue, M. K.↗
NASA NTRS1981

The effect of minority carrier mobility variations on solar cell spectral response

Analysis of multistep diffused, high voltage 0.1 ohm-cm solar cells suggests that the increased voltage capability of these cells is correlated with localized variations in the base minority carrier mobility. An attempt to calculate the behavior of those cells revealed unexpected results. It is shown, contrary to what was expected, that spatial variations in the mobility effects severe changes in the short-circuit current and the spectral response. Variations in cell output as a result of imposing abrupt, linear, and exponential mobility variations are presented.

Weizer, V. G.↗
NASA NTRS1980

Study of thermal control systems for orbiting power systems. Materials experiment carrier thermal control system study

Four possible arrangements of the materials experiment carrier (MEC) and power system (PS) thermal control loops were defined which would provide one kW of heat rejection for each kW of power to the MEC payload. These arrangements were compared to the baseline reference concept which provides only 16 kW heat rejection to show the cost of obtaining symmetry in terms of dollars, weight, complexity, growth potential, ease of integration, technology and total launch weight. The results of these comparisons was that the concept which splits the PS thermal control loop into two systems, one to reject PS waste heat and one payload waste heat, appeared favorable. The fluid selection study resulted in recommendation of FC72 as the MEC heat transport fluid based on the thermal and physical characteristics. The coatings reviewed indicated anodized and alodine treated aluminum surfaces or silver teflon are the best choices for the MEC vehicle where durability is an important factor. For high temperature radiators silver teflon or zinc orthotitanate are recommended choices.

Fleming, M. L.↗
NASA NTRS1979

Carrier phase recovery performance for PN-spread TDRSS link with radio-frequency interference

The carrier-phase recovery performance of a Costas loop for a nonlinear satellite channel with uplink and downlink noise is analyzed, and the extension of these results to the case where uplink radio-frequency interference (RFI) is present is considered. The signal format here is binary phase-shift-keyed (BPSK) or unbalanced quaternary phase-shift-keyed (UQPSK), the signals being either the non-return-to-zero (NRZ) or biphase (Manchester) type. With UQPSK, at least one data stream must be PN-spread. The channel comprises additive white Gaussian noise (WGN), a wideband filter, a bandpass nonlinearity and more additive WGN. The RFI being considered is pulsed continuous-wave, pulsed WGN, or a combination of the two. It is noted that the Tracking and Data Relay Satellite System (TDRSS) will be subjected to RFI from certain locations, especially in the S-band of frequencies. The characteristics of this link are generalized to form the assumptions underlying this analysis. The analytical results given include the S-curve of the equivalent loop and the phase-error variance of the linearized loop.

Mckenzie, T. M.↗
NASA NTRS1979

Carrier - Interference ratios for frequency sharing between satellite systems transmitting frequency modulated and digital television signals

As the data rates required for digitally encoded television are reduced, satellite systems employing the transmission of digitally encoded television will become attractive. It is likely that television transmitted in this format will be adjacent to or in the same frequency band as television transmissions in other modulation formats, so a knowledge of carrier to interference power ratios as a function of assessed picture quality will be required for frequency sharing between these different modulation formats. This paper presents the results of subjective and quantitative tests describing the results of interference to a particular digital television system from a frequency modulated (FM) television system, and for interference to an FM television system from a digital television system.

Barnes, S. P.↗
NASA NTRS1980

Nordheim-Gorter like behavior and one carrier conduction in a quasi-one-dimensional system

A linear correlation has been observed between the thermopower and the conductivity in the high-temperature state (T greater than 220 K) of the TTF halide and pseudohalide salts. It is suggested that this correlation indicates conduction by a single type of carrier under two types of scattering and represents the first reported extension of the Nordheim-Gorter behavior to any quasi-one-dimensional conductor.

Datta, T.↗
NASA NTRS1980

Minority carrier diffusion lengths and absorption coefficients in silicon sheet material

Most of the methods which have been developed for the measurement of the minority carrier diffusion length of silicon wafers require that the material have either a Schottky or an ohmic contact. The surface photovoltage (SPV) technique is an exception. The SPV technique could, therefore, become a valuable diagnostic tool in connection with current efforts to develop low-cost processes for the production of solar cells. The technique depends on a knowledge of the optical absorption coefficient. The considered investigation is concerned with a reevaluation of the absorption coefficient as a function of silicon processing. A comparison of absorption coefficient values showed these values to be relatively consistent from sample to sample, and independent of the sample growth method.

Dumas, K. A.↗