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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Ultraviolet to far-infrared dielectric function of n -doped cadmium oxide thin films

Spectroscopic ellipsometry and Fourier transform infrared spectroscopy were applied to extract the ultraviolet to far-infrared (150 – 33333 cm -1 ) complex dielectric functions of high-quality, sputtered indium-doped cadmium oxide (In:CdO) thin crystalline films on MgO substrates possessing carrier densities (N d ) ranging from 1.1 x 10 19 cm -1 to 4.1 x 10 20 cm -1 . A multiple oscillator fit model was used to identify and analyze the three major contributors to the dielectric function and their dependence on doping density: interband transitions in the visible, free-carrier excitations (Drude response) in the near- to far-infrared, and IR-active optic phonons in the far-infrared. More specifically, values pertinent to the complex dielectric function such as the optical band gap (E g ), are shown here to be dependent upon carrier density, increasing from approximately 2.5–3 eV, while the high-frequency permittivity (ε ∞ ) decreases from 5.6 to 5.1 with increasing carrier density. The plasma frequency (ω p ) scales as $\sqrt{N_d}$, resulting in ω p values occurring within the mid- to near-IR, and the effective mass (m *) was also observed to exhibit doping density-dependent changes, reaching a minimum of 0.11 m o in unintentionally doped films (1.1 x 10 19 cm -1 ). Good quantitative agreement with prior work on polycrystalline, higher-doped CdO films is also demonstrated, illustrating the generality of the results. The analysis presented here in this paper will aid in predictive calculations for CdO-based next-generation nanophotonic and optoelectronic devices, while also providing an underlying physical description of the key properties dictating the dielectric response in this atypical semiconductor system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Ferromagnetic MnBi 4 Te 7 obtained with low-concentration Sb doping: A promising platform for exploring topological quantum states

The tuning of the magnetic phase, chemical potential, and structure is crucial to observe diverse exotic topological quantum states in Mn Bi 2 Te 4 (Bi 2 Te 3 ) m (m = 0–3). Here we show a ferromagnetic (FM) phase with a chiral crystal structure in Mn (Bi 1–x Sb x ) 4 Te 7 , obtained via tuning the growth conditions and Sb concentration. Unlike previously reported Mn (Bi 1–x Sb x ) 4 Te 7 , which exhibits FM transitions only at high Sb doping levels, our samples show FM transitions (T C = 13.5 K) at 15%–27% doping levels. Furthermore, our single-crystal x-ray-diffraction structure refinements find Sb doping leads to a chiral structure with the space group of P3, contrasted with the centrosymmetric $P\bar{3}m1$ crystal structure of the parent compound MnBi 4 Te 7 . Through angle-resolved photoemission spectroscopy measurements, we also demonstrated that the nontrivial band topology is preserved in the Sb-doped FM samples. Given that the nontrivial band topology of this system remains robust for low Sb doping levels, our success in making FM Mn(Bi 1–x Sb x ) 4 Te 7 with x = 0.15, 0.175, 0.2, and 0.27 paves the way for realizing the predicted topological quantum states, such as the axion insulator and Weyl semimetals. Additionally, we also observed magnetic glassy behavior in both antiferromagnetic MnBi 4 Te 7 and FM Mn (Bi 1–x Sb x )4 Te 7 samples, which we believe originates from cluster spin-glass phases coexisting with long-range antiferromagnetic/FM orders. Further, we have also discussed how the antisite Mn ions impact the interlayer magnetic coupling and how FM interlayer coupling is stabilized in this system.

36 MATERIALS SCIENCE↗
DOE OSTI2022

First-principles ionized-impurity scattering and charge transport in doped materials

Scattering of carriers with ionized impurities governs charge transport in doped semiconductors. However, electron interactions with ionized impurities cannot be fully described with quantitative first-principles calculations, so their understanding relies primarily on simplified models. Here we show an ab initio approach to compute the interactions between electrons and ionized impurities or other charged defects. It includes the short- and long-range electron-defect (e-d) interactions on equal footing and allows for efficient interpolation of the e-d matrix elements. Here we combine the e-d and electron-phonon interactions in the Boltzmann transport equation to compute the carrier mobilities in doped silicon over a wide range of temperature and doping concentrations, seamlessly spanning the defect- and phonon-limited transport regimes. The individual contributions of the defect- and phonon-scattering mechanisms to the carrier relaxation times and mean-free paths are analyzed. Our method provides a powerful tool to study electronic interactions in doped materials. It broadens the scope of first-principles transport calculations, enabling studies of a wide range of doped semiconductors and oxides with application to electronics, energy, and quantum technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Nanometer-Scale Imaging of Inhomogeneous Active Charge Carriers in Arsenic-Doped CdTe Thin Films

We report nanometer-scale imaging of active carrier distribution of As-doped CdTe films by scanning capacitance microscopy (SCM). We developed SCM sample preparation for CdTe by ion-milling followed by thermal processing. The nanometer-resolution carrier delineation for CdTe was validated by imaging on a CdTe cross-section sample made by a molecular beam epitaxy layer stack with As-doping concentrations of 10^15 ~10^18 /cm 3 . We found that the carrier distribution in As-doped films was significantly nonuniform, with inhomogeneity ranging from sub-um to a few um and concentration variation of one order of magnitude (low 10^16 to low 10^17 /cm 3 ). This nonuniformity is distributed randomly, independent of grain structure and grain boundary (GB). We used Kelvin probe force microscopy (KPFM) and cathodoluminescence (CL) to further map the surface potential and radiative illumination on the same area as the SCM image. Higher potential and lower CL intensity were found on GBs but not on SCM contrast, illustrating positive GB charging and GB recombination but not GB-distinguished doping. The overall KPFM potential image is in rough agreement with the SCM carrier distribution, in terms of Fermi-level position relative to the bandgap edge - thus resulting in the band-edge potential fluctuation. Nonuniform carrier concentration, potential fluctuation, and defect recombination can all together cause the Voc deficit of the As-doped CdTe device.

14 SOLAR ENERGY↗
DOE OSTI2025

Crystal Growth, Optical and Scintillation Properties of Eu 2+ -doped TlSr 2 Br 5

Crystals of undoped and Eu 2+ -doped TlSr 2 Br 5 of up to 16 mm in diameter and 50 mm in length were grown by the Vertical Bridgman technique. TlSr 2 Br 5 has the monoclinic crystal structure with space group P21/c. Its density and Z eff are 5.03 g/cm 3 and 58.6, respectively. Radioluminescence spectra of undoped and Eu 2+ -doped TlSr 2 Br 5 feature a broad emission band peaking at about 440 nm for undoped and 520 nm for Eu 2+ -doped crystals. The light yield of undoped TlSr 2 Br 5 is 42,000 ph/MeV, which increases to 55,000 ph/MeV for Eu 2+ -doped crystals. The energy resolution at 662 keV ( 137 Cs) is about 5 – 6% (FWHM). As a result, the scintillation decay of undoped and Eu 2+ -doped TlSr 2 Br 5 is of the order of 100s of nanoseconds.

Bridgman technique↗
DOE OSTI2020

The ionic conductivity of Sm‐doped ceria

Abstract The oxygen ion conductivity of polycrystalline samples of Sm‐doped ceria and of Gd‐doped ceria is studied as a function of doping fraction and temperature using impedance spectroscopy allowing the separation of bulk and grain boundary conductivity. The introduction of a fine spacing for the Sm dopant fraction allows the clear identification of the dopant fraction leading to the largest bulk conductivity. At 267°C, the largest bulk conductivity is shown for Ce 0.93 Sm 0.07 O 1.965 . With increasing temperature, indications of an increase in the dopant fraction, which leads to the maximum in conductivity, are found. For the grain boundary conductivity, the maximum appears at larger dopant fractions compared to the bulk conductivity. The largest total conductivity for both dopants is again found for Sm‐doped ceria. In literature, different syntheses and sample preparation methods led to larger total conductivities for Gd‐doped ceria. In this work, we demonstrate that the variation of sintering conditions leads to scattering in the conductivity over one order of magnitude. Finally, we demonstrate that, in nominally pure cerium oxide, impurities dominate the ionic conductivity.

Koettgen, Julius↗
DOE OSTI2025

Mitigation of Pitting on Nitrogen-Doped Niobium Surfaces through Two-Step Electropolishing

Surface processing of niobium superconducting RF cavities used in particle accelerators is crucial for determining their performance. The nitrogen (N)-doping method, developed at Fermilab, enhances the cavities’ quality factor by doping the cavity’s interior surface with N atoms at 800 °C. After N-doping, electropolishing (EP) is employed to remove the niobium nitride phases and attain the desired concentration of interstitial N atoms. This study explores the effects of EP conditions on N-doped niobium samples. The samples were electropolished at 5 to 40 °C and voltages between 3 and 22 V. Different EP voltage ranges produced two types of pits, classified based on their sizes. Larger pits, linked to higher voltages, are also affected by the reaction rate. Pitting could be reduced at a lower temperature and adequate EP voltage. However, to effectively minimize gas evolution forming large-sized pitting, peeling off the top nitride layer before EP might be beneficial. This was achieved through precise low-voltage etching, forming a two-step EP process. The process involves removing the top 100–200 nm layer at a low voltage, followed by standard EP to remove the required material. This two-step EP process effectively mitigated the pitting risk associated with gas evolution on N-doped surfaces.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Frequency dependence of BCS and residual resistance using multi-mode measurement of nitrogen-doped single-cell elliptical cavities

Various cavity surface treatments have been found to significantly improve cavity quality factor, Q0, with one such treatment being nitrogen-doping (N-doping). N-doped 1.3 GHz cavities were the first found to exhibit anti-Q slope, the increase of Q0 with accelerating field, Eacc. However, even with the use of the same N-doping recipes, this anti-Q slope behavior has not been realized in sub-GHz frequency cavities. In this study, we measured the Q0 and surface resistance, RS, of our N-doped, single-cell, elliptical cavity for both the 644 MHz fundamental mode (FM) and 1.45 GHz higher-order mode (HOM). As a result of multi-mode measurements, the BCS and residual resistances, the temperature-dependent and temperature-in-dependent RF surface resistances, could be determined without the influence of cavity-to-cavity surface treatment variations. We will discuss the frequency-dependent behaviors of the BCS and residual resistances.

Accelerator Physics↗
DOE OSTI2024

Materials Science of the Interstitial Doping Process

Particle accelerators are an increasingly important tool for frontier science. Growing initial and operating costs are a significant barrier for upgrades and for new machines. While everything matters, the major cost contributor is the SRF cavities and their ancillary facilities (e.g., cryoplant). Accordingly, the accelerator science community devotes much R&D effort to improving their energy efficiency (increased Q o ) and gradient (E acc ). While improved gradient is at the forefront for certain machines (ILC), improved quality factor has broader impact, benefitting all SRF applications. An important opportunity for accelerator science and technology to move forward arose in the course of building the LCLS-II, the second generation Linac Coherent Light Source at SLAC. At more or less the same time, researchers at Fermilab discovered that introducing a small amount of nitrogen to the niobium surface could improve the mid-range quality factor as much as three-fold. A firm resolution of how nitrogen confers its benefit attracts much current research interest. The key elements of the “nitrogen doping” process were vacuum bake at 800 °C, brief exposure to mTorr of nitrogen at several hundred degrees followed by electropolish (EP) to remove several microns from the surface to eliminate unwanted nitrides: While the process as a whole was novel, the comprising unit operations are familiar to the accelerator community. It was judged reasonable to adopt it as a cost-reduction technology for LCLS-II. Researchers carried out a program of varying process parameters and measuring performance in single-cell cavities, leading to a consensus stable protocol for the project. The transition to vendor fabrication and multiple niobium sources has presented unforeseen challenges of performance variation evidently not connected to anything that could be incorporated in a purchase specification. Moving beyond the high temperature N-doping process above, researchers reported a simplified process consisting entirely of tens of hours anneal in a N atmosphere at low temperatures (~120°C – 160°C) after 800 °C UHV bake. These processes typically yield a few-nm doped layer while the high temperature process yields at least a few to many micron doped layer. Even more recently, oxygen has been used to dope instead of nitrogen which leaves a few-µm O-alloyed layer upon vacuum annealing for 300 °C for ~3 hours. The investigation of these materials is just beginning, but the process simplification they may offer is surely attractive. The very low quantity of material that appears to be significant in the “infusion” process indicates the need for very careful control of gas species available for diffusion into the surface during low temperature treatment, both for process control and research to characterize the underlying dynamics. Oxygen alloying offers the further opportunity to utilize the decomposition of the surface native oxide as the dopant source. It is necessary to understand and (thus) manage this process. We have been supported by the Department of Energy Offices of High Energy Physics and Nuclear Physics to pursue this goal.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Beating the Auditors: Comparing Doping in Sport to Nuclear Proliferators

The Berlinger Bottle (Figure 1, below) is the central part of the BEREG-Kit that has been used by anti-doping agencies worldwide for over 25 years. As documented in the World Anti-Doping Agency’s investigative report [Ref 1], in 2014, Russian state-level actors found ways to defeat these bottles and was able to secretly replace an athlete’s drug-laced urine with clean urine samples that had been collected earlier. This cheating scheme allowed rampant performance enhancing drug use by its athletes, and (before disqualifications) earned Russia 33 medals in the 2014 Sochi Olympics – more than double its haul of 15 medals at the 2010 Winter Olympics in Vancouver. All this activity was conducted despite the watchful eye of the World Anti-Doping Agency. Similarly, Lance Armstrong and the US Postal Team infamously used performance enhancing drugs and blood transfusions to win 7 Tour de France titles (again, before disqualification) in a row, all under the supervision of L’Union Cycliste Internationale (UCI) and the US Anti Doping Agency. The inspection role of anti-doping agencies is similar in scope to the role of a Safeguards Inspector with the International Atomic Energy Agency: detect the misuse of facilities, and conduct scheduled and randomized testing to detect and deter would-be cheaters. This paper will explore the motivation, the means, and the mistakes which led to discovery – and will draw out commonalities between those who seek to cheat in sports, and those who seek to undermine international nuclear safeguards as Iraq tried in the 1980s.

98 NUCLEAR DISARMAMENT, SAFEGUARDS, AND PHYSICAL P↗
DOE OSTI2024

Sulfur-Doped Carbon Support Boosts CO2RR Activity of Ag Electrocatalysts

For presentation at the 70th AVS International Symposium and Exhibition. In this work, we show that the activity of Ag electrocatalysts for electrochemical CO2 to CO conversion is improved when supported on sulfur-doped (S-doped) carbon materials. S-doped carbon support was created by treating the heavily sputtered, highly oriented pyrolytic graphite (HOPG) in H2S at elevated temperatures, as confirmed by the S 2p X-ray photoelectron spectroscopy (XPS) peak. Scanning tunneling microscopy (STM) images indicated that Ag nanoparticles supported on S-doped HOPG had similar size distributions as those supported on sulfur-free (S-free) HOPG. While both catalysts reached > 90% CO Faradaic efficiency (FECO) at E = -1.3 V vs. the reversible hydrogen electrode (RHE) in the CO2 reduction reaction (CO2RR), Ag catalysts supported on S-doped HOPG demonstrated 70% higher CO turnover frequency (TOFCO = 3.4 CO/atomAg/s) than those supported on S-free HOPG (TOFCO = 2.0 CO/atomAg/s). Preliminary calculations based on density functional theory (DFT) indicated a more favorable energetic pathway of CO2-to-CO at the C-S-Ag interface, tentatively consistent with experiments. These results hint at a new approach to design active and selective electrocatalysts for CO2 conversion.

Deng, Xingyi↗
DOE OSTI2026

Boosting CO2R Performance of Ag Electrocatalysts by Sulfur-Doped Carbon Support

We find that S-doped carbon support can boost the CO2 reduction (CO2R) performance of Ag electrocatalysts. Firstly, surface science enabled electrocatalysis showed that Ag supported on S-doped highly oriented pyrolytic graphite (HOPG), a model electrocatalyst, demonstrated 100% higher CO turnover frequency (TOFCO = 3.6 ± 0.2 CO/atomAg/s) than that supported on S-free HOPG (TOFCO = 1.8 ± 0.2 CO/atomAg/s). Computational modeling based on density functional theory (DFT) revealed a more stabilized *COOH intermediate on Ag supported on S-doped carbon and thus a more favorable energetic pathway of CO2-to-CO, consistent with experimental results from the model electrocatalysts studies. Finally, this proof of concept was translated to the synthesis of powder electrocatalyst with 2 wt% Ag supported on S-doped carbon black, demonstrating > 40-fold high CO mass activity than a commercial Ag cathode with steady FECO ~ 96% at 100 mA/cm2 for 50 hours of continuous operation in a gas diffusion electrode (GDE) electrolyzer. For comparison, 2 wt% Ag supported on carbon black without S- doping showed a maximum FECO ~ 70% at 100 mA/cm2. This work demonstrates a successful bottom-up design of CO2R electrocatalysts guided by surface science enabled electrocatalysis.

CO2 conversion↗
DOE OSTI2021

Novel Poly-Si:Ga/SiOx Passivating Contacts through Non-Equilibrium Doping

Poly-Si/SiOx passivating contacts are one of the key enablers for high-efficiency, low-cost c-Si solar cells. In recent years, record devices have reached efficiencies of 26% in the laboratory and 25% in the industry. The current cell structure utilizing a tunneling oxide passivating contact structure with a back phosphorus-doped poly- Si/SiOx passivating contact and a front boron diffused emitter suffers from large emitter recombination. Thus, replacing the front B diffused emitter with a p-type passivating contact is a route to overcome this deficiency. This gives rise to front/back poly-Si based passivating contacts. To address the low passivation performance of the B-doped poly-Si passivating contacts, we replace B with Ga as a novel p-type dopant to avoid dopant accumulation in the tunneling oxide, which is known to lead to large degradation loss in passivation quality. Here, we introduce a non-equilibrium method via pulsed laser melting to thermally melt and recrystallize the poly-Si and redistribute the dopants, achieving doping concentrations above the solid solubility limit (~4E19 cm-3). We demonstrate a good passivation quality with an iVoc of 721 mV with an active Ga doping concentration in poly-Si >1020 cm-3. Furthermore, we show a low contact resistivity of 33.2 +/- 9.3 mO cm2 using a diode model calculation. Finally, cross-section scanning spreading resistance microscopy was performed to determine the resistance profile across the non-homogeneously doped poly-Si layer.

c-Si↗
NASA NTRS1972

Piezoresistance and hole transport in beryllium-doped silicon.

The resistivity and piezoresistance of p-type silicon doped with beryllium have been studied as a function of temperature, crystal orientation, and beryllium doping concentration. It is shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gauge factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, while the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

Littlejohn, M. A.↗
NASA NTRS1974

Low temperature coefficient of resistance and high gage factor in beryllium-doped silicon

The gage factor and resistivity of p-type silicon doped with beryllium was studied as a function of temperature, crystal orientation, and beryllium doping concentration. It was shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gage factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, whereas the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

Robertson, J. B.↗
NASA NTRS1985

Phenomena Simulation for Heavy Doping and Surface Recombination Velocity

The theoretical models now available that characterize heavily doped (highly conducting) regions in silicon are survyed. Analytical and numerical approaches that determine the influence of such regions on the conversion efficiency of solar cells are examined. Although dilutely doped silicon is well characterized except for some disagreement about optical absorption coefficients, what exists now for heavily doped silicon and its interplay with adjoining regions is an incomplete theory in which not all contributers to transport, recombination, generation, and trapping are defined. Further, the parameters relating to these mechanisms and their values as determined by experiment are subject to various interpretations. The characterization of heavily doped silicon is treated not as a theory but rather as an imperfectly articulated and incompletely formalized body of experience. This view is intended to help point the way toward the attainment of a more complete of heavily doped silicon and thereby toward more informed designs of solar cells. Because computer programs constitute tools both for design and for estimating performance limits, the review includes some remarks pertinent to existing and developing programs.

Lindholm, F. A.↗
NASA NTRS1987

Measurement of steady-state minority-carrier transport parameters in heavily doped n-type silicon

The relevant hole transport and recombination parameters in heavily doped n-type silicon under steady state are the hole diffusion length and the product of the hole diffusion coefficient times the hole equilibrium concentration. These parameters have measured in phosphorus-doped silicon grown by epitaxy throughout nearly two orders of magnitude of doping level. Both parameters are found to be strong functions of donor concentration. The equilibrium hole concentration can be deduced from the measurement. A rigid shrinkage of the forbidden gap appears as the dominant heavy doping mechanism in phosphorus-doped silicon.

Del Alamo, Jesus A.↗
NASA NTRS1993

Synthesis of phthalocyanine doped sol-gel materials

The synthesis of sol-gel silica materials doped with three different types of metallophthalocyanines has been studied. Homogeneous materials of good optical quality were prepared and the first optical limiting measurements of dyes in sol-gel hosts were carried out. The properties of these solid state limiters are similar to limiters based on phthalocyanine (Pc) in solution. Sol-gel silica materials containing copper, tin and germanium phthalocyanines were investigated. The initial step in all cases was to prepare silica sols by the sonogel method using tetramethoxy silane (TMOS), HCl and distilled water. Thereafter, the synthesis depended upon the specific Pc and its solubility characteristics. Copper phthalocyanine tetrasulfonic acid tetra sodium salt (CuPc4S) is soluble in water and various doping levels (1 x 10 (exp -4) M to 1 x 10 (exp -5) M) were added to the sol. The group IV Pc's, SnPc(OSi(n-hexyl)3)2 and GePc(OSi(n-hexyl)3)2, are insoluble in water and the process was changed accordingly. In these cases, the compounds were dissolved in THF and then added to the sol. The Pc concentration in the sol was 2 x 10(exp -5)M. The samples were then aged and dried in the standard method of making xerogel monoliths. Comparative nanosecond optical limiting experiments were performed on silica xerogels that were doped with the different metallophthalocyanines. The ratio of the net excited state absorption cross section (sigma(sub e)) to the ground state cross section (sigma(sub g)) is an important figure of merit that is used to characterize these materials. By this standard the SnPc sample exhibits the best limiting for the Pc doped sol-gel materials. Its cross section ratio of 19 compares favorably with the value of 22 that was measured in toluene. The GePc materials appear to not be as useful as those containing SnPc. The GePc doped solids exhibit a higher onset energy (2.5 mj and lower cross section ratio, 7. The CuPc4S sol-gel material has a still lower cross section ratio, 4, however, the tetrasulfonate groups make the dye soluble in water which greatly facilitates its incorporation into the sol-gel matrix. The nonlinear transmission of CuPc4S in a pH 2 buffer solution and in a silica xerogel were compared. It is evident that the CuPc4S preserves its optical limiting behavior in the sol-gel matrix, indicating that the fundamental excited state absorption process is essentially the same for a molecule in solution or in the solid state. Although the spectroscopic details of energy level lifetimes are unknown, the significance is that passive optical limiting has been achieved in the solid state via incorporation of a dye into an inorganic host. The only compromise occurs at the extremely high energy regime where photobleaching is observed. This is a result of the limited mobility of the dye molecules in the solid silica host relative to a liquid host. The effects of photodegradation in the xerogel are additive, whereas the solution provides a supply of fresh molecules that are free to enter the active volume between pulses.

Dunn, Bruce↗