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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Low resistance silver contacts to indium phosphide - Electrical and metallurgical considerations

The electrical and metallurgical behavior of the Ag-InP contact system has been investigated. Specific contact resistivity (Rc) values in the low 10 exp -6 Ohm sq cm range are readily achieved on n-InP (Si: 1.7 x 10 exp 18/cu cm) after sintering at 400 C for several minutes. The low Rc values, however, are shown to be accompanied by dissolution of InP into the metallization, resulting in device degradation. An analysis of the sinter-induced metallurgical interactions shows this system to be similar to the well-characterized Au-InP system, albeit with fundamental differences. The similarities include the dissociative diffusion of In, the reaction-suppressing effect of SiO2 capping, and especially, the formation of a phosphide layer at the metal-InP interface. The low post-sinter Rc values in the Ag-InP system may be due to the presence of a AgP2 layer at the metal-InP interface; low values of Rc can be achieved without incurring device degrading metallurgical interactions by introducing a thin AgP2 layer between the InP and the current carrying metallization.

Weizer, Victor G.↗
NASA NTRS2001

Fabricating and using a micromachined magnetostatic relay or switch

A micromachined magnetostatic relay or switch includes a springing beam on which a magnetic actuation plate is formed. The springing beam also includes an electrically conductive contact. In the presence of a magnetic field, the magnetic material causes the springing beam to bend, moving the electrically conductive contact either toward or away from another contact, and thus creating either an electrical short-circuit or an electrical open-circuit. The switch is fabricated from silicon substrates and is particularly useful in forming a MEMs commutation and control circuit for a miniaturized DC motor.

Tai, Yu-Chong↗
NASA NTRS2009

Expansion Compression Contacts for Thermoelectric Legs

In a proposed alternative to previous approaches to making hot-shoe contacts to the legs of thermoelectric devices, one relies on differential thermal expansion to increase contact pressures for the purpose of reducing the electrical resistances of contacts as temperatures increase. The proposed approach is particularly applicable to thermoelectric devices containing p-type (positive-charge-carrier) legs made of a Zintl compound (specifically, Yb14MnSb11) and n-type (negative charge-carrier) legs made of SiGe. This combination of thermoelectric materials has been selected for further development, primarily on the basis of projected thermoelectric performance. However, it is problematic to integrate, into a practical thermoelectric device, legs made of these materials along with a metal or semiconductor hot shoe that is required to be in thermal and electrical contact with the legs. This is partly because of the thermal-expansion mismatch of these materials: The coefficient of thermal expansion (CTE) of SiGe is 4.5 x 10(exp -6) C (exp -1), while the CTE of Yb14MnSb11 is 20 x 10(exp -6) C(exp -1). Simply joining a Yb14MnSb11 and a SiGe leg to a common hot shoe could be expected to result in significant thermal stresses in either or both legs during operation. Heretofore, such thermal stresses have been regarded as disadvantageous. In the proposed approach, stresses resulting from the CTE mismatch would be turned to advantage.

Sakamoto, Jeffrey↗
NASA NTRS2003

Radiation tolerant back biased CMOS VLSI

A CMOS circuit formed in a semiconductor substrate having improved immunity to total ionizing dose radiation, improved immunity to radiation induced latch up, and improved immunity to a single event upset. The architecture of the present invention can be utilized with the n-well, p-well, or dual-well processes. For example, a preferred embodiment of the present invention is described relative to a p-well process wherein the p-well is formed in an n-type substrate. A network of NMOS transistors is formed in the p-well, and a network of PMOS transistors is formed in the n-type substrate. A contact is electrically coupled to the p-well region and is coupled to first means for independently controlling the voltage in the p-well region. Another contact is electrically coupled to the n-type substrate and is coupled to second means for independently controlling the voltage in the n-type substrate. By controlling the p-well voltage, the effective threshold voltages of the n-channel transistors both drawn and parasitic can be dynamically tuned. Likewise, by controlling the n-type substrate, the effective threshold voltages of the p-channel transistors both drawn and parasitic can also be dynamically tuned. Preferably, by optimizing the threshold voltages of the n-channel and p-channel transistors, the total ionizing dose radiation effect will be neutralized and lower supply voltages can be utilized for the circuit which would result in the circuit requiring less power.

Maki, Gary K.↗
DOE OSTI2025

Integration of hydrophobic gas diffusion layers for zero-gap electrolyzers to enable highly energy-efficient CO 2 electrolysis to C 2 products

Electrochemical CO 2 reduction (eCO2R) is an attractive route for mitigating global CO 2 emissions while producing value-added chemicals. Ethylene is one product of eCO2R and is an essential industrial precursor with a global market of $230 billion. The large-scale implementation of C 2 H 4 -selective CO 2 electrolyzers remains challenging because of low energy efficiencies. In this work, we develop the design principles necessary for incorporating an expanded polytetrafluoroethylene (ePTFE) electrode into a zero-gap electrolyzer while simultaneously developing an integrated electrical front contact that reduces the ohmic resistances inherent to electrically insulating gas diffusion layers. By co-designing the catalyst layer, gas diffusion medium, and operating conditions for a zero-gap ePTFE gas diffusion electrode (GDE), we achieved a full-cell voltage of 2.5 V at 200 mA cm −2 at 25 cm 2 geometric area cell with Faradaic efficiencies of 48% for ethylene and 40% for ethanol. This work highlights strategies for developing a scalable, stable, and highly energy-efficient eCO2R for C 2 products.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2001

Which nanowire couples better electrically to a metal contact: Armchair or zigzag nanotube?

The fundamental question of how chirality affects tile electronic coupling of a nanotube to metal contacts is important for tile application of nanotubes as nanowires. We show that metallic-zigzag nanotubes are superior to armchair nanotubes as nanowires, by modeling the metal-nanotube interface. More specifically, we show that as a function of coupling strength, the total electron transmission of armchair nanotubes increases and tends to be pinned close to unity for a metal with Fermi wave vector close to that of gold. In contrast, the transmission probability of zigzag nanotubes increases to the maximum possible value of two. The origin of these effects lies in the details of the wave function, which is explained.

Anantram, M. P.↗
NASA NTRS2013

Dual ohmic contact to N- and P-type silicon carbide

Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

Okojie, Robert S.↗
NASA NTRS1992

Effects of ultra-vacuum and space environment on contact ohmic resistance: LDEF experiment AO 138-11

The FRECOPA experimentation of chemical resistance of electrical connector contacts, as described, has evidenced the detrimental time variations of nickel plated conductors and gilded copper contacts, irrespective of crimping storage or metal peening conditions. With a view to reorient aluminum technology a silvered aluminum conductor/gilded aluminum contact solution was evaluated.

Assie, Jean-Pierre↗
NASA NTRS1993

The structural and electrical properties of low-resistance Ni contacts to InP

We have investigated the electrical and metallurgical behavior of the Ni-InP contact system. Specific contact resistivity (Rc) values in the low 10 exp -7 Omega-sq cm range are achieved with Ni-only contacts on n-InP by sintering at 400 C for several minutes. The postsinter contact metallization consists of three layers, arranged in the sequence: InP/Ni3P/Ni2P/In. Extended sintering (40 min) at 400 C brings about a rise in Rc to the 10 exp -4 Omega-sq cm range. After extended sintering, the contact metallization is found to consist of only two layers, arranged in the sequence: InP/Ni2P/In. Based on the correlation between low Rc and the presence of Ni3P at the metal-InP interface, it is suggested that the presence of Ni3P is the cause of the low Rc values. We show that the sintering schedule used to achieve low values of Rc is accompanied by substantial metal-InP interdiffusion that results in severe device degradation.

Fatemi, Navid S.↗
NASA NTRS2003

Conducting the Heat

Heat conduction plays an important role in the efficiency and life span of electronic components. To keep electronic components running efficiently and at a proper temperature, thermal management systems transfer heat generated from the components to thermal surfaces such as heat sinks, heat pipes, radiators, or heat spreaders. Thermal surfaces absorb the heat from the electrical components and dissipate it into the environment, preventing overheating. To ensure the best contact between electrical components and thermal surfaces, thermal interface materials are applied. In addition to having high conductivity, ideal thermal interface materials should be compliant to conform to the components, increasing the surface contact. While many different types of interface materials exist for varying purposes, Energy Science Laboratories, Inc. (ESLI), of San Diego, California, proposed using carbon velvets as thermal interface materials for general aerospace and electronics applications. NASA s Johnson Space Center granted ESLI a Small Business Innovation Research (SBIR) contract to develop thermal interface materials that are lightweight and compliant, and demonstrate high thermal conductance even for nonflat surfaces. Through Phase II SBIR work, ESLI created Vel-Therm for the commercial market. Vel-Therm is a soft, carbon fiber velvet consisting of numerous high thermal conductivity carbon fibers anchored in a thin layer of adhesive. The velvets are fabricated by precision cutting continuous carbon fiber tows and electrostatically flocking the fibers into uncured adhesive, using proprietary techniques.

Source record↗
NASA NTRS1985

A rotating electrical transfer device

The design, development, and performance characteristics of two roll ring configurations - a roll ring being a device used in transferring electrical energy across a continuously rotating or oscillating interface through one or more flexible rolling contacts, or flexures are described. Emphasis is placed on the design problems and solutions encountered during development in the areas of flexure fatigue, contact electroplating, electrical noise, and control of interface geometry. Also, the present status of each configuration is summarized.

Porter, R. S.↗
NASA NTRS2008

An Investigation of the Electrical Short Circuit Characteristics of Tin Whiskers

Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that has a currently unknown probability associated with it. Due to contact resistance electrical shorts may not occur at lower voltage levels. In this experiment, we study the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From this data we can estimate the probability of an electrical short, as a function of voltage, given that a free tin whisker has bridged two adjacent exposed electrical conductors. Also, three tin whiskers grown from the same Space Shuttle Orbiter card guide used in the aforementioned experiment were cross-sectioned and studied using a focused ion beam (FIB). The rare polycrystalline structure seen in the FIB cross section was confirmed using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size to determine that the tin plating on the card guides had a bright finish.

Courey, Karim J.↗
NASA NTRS2008

An Empirical Model for Estimating the Probability of Electrical Short Circuits from Tin Whiskers-Part I

Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that has a currently unknown probability associated with it. Due to contact resistance, electrical shorts may not occur at lower voltage levels. In this experiment, we study the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From this data, we can estimate the probability of an electrical short, as a function of voltage, given that a free tin whisker has bridged two adjacent exposed electrical conductors. In addition, three tin whiskers grown from the same Space Shuttle Orbiter card guide used in the aforementioned experiment were cross sectioned and studied using a focused ion beam (FIB).

Courey, Karim↗
NASA NTRS2008

An Investigation of the Electrical Short Circuit Characteristics of Tin Whiskers

Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that has a currently unknown probability associated with it. Due to contact resistance electrical shorts may not occur at lower voltage levels. In this experiment, we study the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From this data we can estimate the probability of an electrical short, as a function of voltage, given that a free tin whisker has bridged two adjacent exposed electrical conductors. Also, three tin whiskers grown from the same Space Shuttle Orbiter card guide used in the aforementioned experiment were cross-sectioned and studied using a focused ion beam (FIB). The rare polycrystalline structure seen in the FIB cross section was confirmed using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size to determine that the tin plating on the card guides had a bright finish.

Courey, Karim J.↗