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Presence of pinholes or defects in nonconductive protective coating on inside surface of closed vessel is detected if vessel has one opening into which small stainless-steel probe can be introduced. By inserting probe and attaching another to outside surface, and by filling vessel with ten percent sodium chloride solution, integrity of coating is determined by measuring electrical conductivity through vessel wall.
A laboratory type CVD reactor system with a vertical deposition chamber and sample pedestal heated by an external RF coil has been extensively modified by installation of mass flow controllers, automatic process sequence timers, and special bellows-sealed air-operated valves for overall improved performance. Various film characterization procedures, including classical metallography, SEM analyses, X ray diffraction analyses, surface profilometry, and electrical measurements (resistivity, carrier concentration, mobility, spreading resistance profiles, and minority-carrier lifetime by the C-V-t method) area used to correlate Si sheet properties with CVD parameters and substrate properties. Evaluation procedures and measurements are given. Experimental solar cell structures were made both in epitaxial Si sheet (on sapphire substrates) and in polycrystalline material on alumina substrates, the former to provide an indication of what might be an upper limit on performance of the latter. Preliminary results are given, as obtained in cell structures not specially designed to allow for the unique properties of the sheet material, and fabricated in material known to be far from optimum for photovoltaic performance. Low power conversion efficiencies have been obtained in the epitaxial as well as the polycrystalline Si sheet.
A program to investigate the reliability characteristics of unencapsulated low-cost terrestrial solar cells using accelerated stress testing is described. Reliability (or parametric degradation) factors appropriate to the cell technologies and use conditions were studied and a series of accelerated stress tests was synthesized. An electrical measurement procedure and a data analysis and management system was derived, and stress test fixturing and material flow procedures were set up after consideration was given to the number of cells to be stress tested and measured and the nature of the information to be obtained from the process. Selected results and conclusions are presented.
The results of system analyses and implementation studies of an advanced location and data collection system (ALDCS) , proposed for inclusion on the National Oceanic Satellite System (NOSS) spacecraft are reported. The system applies Doppler processing and radiofrequency interferometer position location technqiues both alone and in combination. Aspects analyzed include: the constraints imposed by random access to the system by platforms, the RF link parameters, geometric concepts of position and velocity estimation by the two techniques considered, and the effects of electrical measurement errors, spacecraft attitude errors, and geometric parameters on estimation accuracy. Hardware techniques and trade-offs for interferometric phase measurement, ambiguity resolution and calibration are considered. A combined Doppler-interferometer ALDCS intended to fulfill the NOSS data validation and oceanic research support mission is also described.
The on-site system application analysis is summarized. Preparations were completed for the first test of a full-sized single cell. Emphasis of the methanol fuel processor development program shifted toward the use of commercial shell-and-tube heat exchangers. An improved method for predicting the carbon-monoxide tolerance of anode catalysts is described. Other stack support areas reported include improved ABA bipolar plate bonding technology, improved electrical measurement techniques for specification-testing of stack components, and anodic corrosion behavior of carbon materials.
Photovoltaic modules are exposed to the equivalent of ten years of sunlight aging in an accelerated exposure testing and evaluation program, the objective being to determine the long-term durability characteristics of flat plate modules in comparatively short periods of time. The modules are illuminated with concentrated sunlight in a large, sun-tracking, Fresnel-reflecting solar concentrator. The effects of the accelerated exposure are assessed by performing periodic visual inspections and electrical measurements. It is found that field-experienced failure modes are duplicated, that acceleration factors of 6x to 8x are readily attainable, and that the test method is feasible as a predictive tool for photovoltaic module lifetime durability.
A reproducible process is described for growing a thick single-crystal layer of cubic SiC on a single-crystal Si wafer by chemical vapor deposition. A buffer layer, grown in situ, is used between the cubic SiC and the Si substrate to minimize the effect of lattice mismatch. Layers of up to 34 microns thick and several sq cm in area have been grown. Wafers are obtained by chemically removing the Si substrates from the grown layers. Excellent electron channeling patterns produced by these wafers indicate very good crystal quality. Preliminary electrical measurements have yielded electron mobilities up to 380 sq cm/Vs.
A practical procedure for the evaluation of the Fermi energy in semi-insulating (SI)GaAs from electrical measurements is presented. This procedure makes it possible to reliably extend the determination of the major deep level (EL2) concentration, by near-infrared absorption measurements, to SIGaAs. Employing this procedure, it is shown that the EL2 concentration in Czochralski-grown GaAs increases monotonically with increasing As/Ga ratio (throughout the conversion from SI n type to semiconducting p-type crystals) rather than abruptly as previously proposed.
CdS films have been prepared by spraying in air solutions of thiourea with either cadmium chloride or cadmium acetate with varying mole ratio and substrate temperature, and subsequently heat treating in oxygen. Substrates included both bare glass or sapphire and transparent conducting oxide-coated sapphire for electrical measurements lateral and transverse to the CdS plane, respectively. Dark resistances of over 10 to the 14th ohms and light-to-dark conductivities of up to 10 to the 7th were obtained using uncoated substrates. The use of Cd(C2H3O2)2 in place of CdCl2 greatly increased the speed of response although with some sacrifice in photoconductivity. Deposition of CdS on ITO-coated surfaces led to greatly reduced dark resistances for the case of CdCl2, but not Cd(C2H3O2)2, presumably due to HCl reaction with the ITO coating in the course of spraying with the former. Ion microprobe analysis detected indium within the CdS films exhibiting low dark resistance. Measurements of the dark and light conductivities at temperatures down to 77 K are given as are the response times for unetched and HCl-etched surfaces.
Thermal oxidation of thick single-crystal 3C SiC layers on silicon substrates was studied. The oxidations were conducted in a wet O2 atmosphere at temperatures from 1000 to 1250 C for times from 0.1 to 50 h. Ellipsometry was used to determine the thickness and index of refraction of the oxide films. Auger analysis showed them to be homogeneous with near stoichiometric composition. The oxide growth followed a linear parabolic relationship with time. Activation energy of the parabolic rate constant was found to be 50 kcal/mole, while the linear rate constant was 74 kcal/mole. The latter value corresponds approximately to the energy required to break a Si-C bond. Electrical measurements show an effective density of 4-6 x 10 to the 11th per sq cm for fixed oxide charges at the oxide-carbide interface, and the dielectric strength of the oxide film is aproximately 6 x 10 to the 6th V/cm.
Technique for measuring electrical resistivities of fibers of graphite, silicon carbide/silicon nitride mixture, and other materials used in composites simple, accurate, and reproducible. Suitable for monofilament fibers with diameters of about 10 to 50 micrometers. Also adapted to two fiber strands.
The reliability and engineering technology base required for thin film solar energy conversions modules is discussed. The emphasis is on the integration of amorphous silicon cells into power modules. The effort is being coordinated with SERI's thin film cell research activities as part of DOE's Amorphous Silicon Program. Program concentration is on temperature humidity reliability research, glass breaking strength research, point defect system analysis, hot spot heating assessment, and electrical measurements technology.
Power system applications of optical systems, primarily using fiber optics, are reviewed. The first section reviews fibers as components of communication systems. The second section deals with fiber sensors for power systems, reviewing the many ways light sources and fibers can be combined to make measurements. Methods of measuring electric field gradient are discussed. Optical data processing is the subject of the third section, which begins by reviewing some widely different examples and concludes by outlining some potential applications in power systems: fault location in transformers, optical switching for light fired thyristors and fault detection based on the inherent symmetry of most power apparatus. The fourth and final section is concerned with using optical fibers to transmit power to electric equipment in a high voltage situation, potentially replacing expensive high voltage low power transformers. JPL has designed small photodiodes specifically for this purpose, and fabricated and tested several samples. This work is described.
A 20-T high-field magnet is used to measure electrical resistance as a function of temperature in the Y(1.2)Ba(0.8)CuO(4-delta) superconductor. The temperature dependence of the critical field, Hc2(T), is obtained from the superconduction transition. A Hc2(O) value of 166T is determined which is the highest critical field yet reported. Results show Y(1.2)Ba(0.8)CuO(4-delta) to be a 90K Type-II superconductor, with a lower critical field Hc1(O) of about 0.2T and a penetration depth of about 290 A.
During the Spacelab 2 mission the plasma diagnostics package (PDP) was released from the Shuttle to free fly. At times during this free flight, when the PDP was magnetically connected to the Shuttle, Stanford's fast-pulsed electron generator, located in the Shuttle cargo bay, ejected a 1-keV 50-mA electron beam. The PDP plasma-wave instrument detected intense whistler-mode radiation during these beam ejections. This paper presents a study of a whistler mode emission detected during one particular continuous electron beam firing. Calculations indicate that the beam radiated approximately 1.6 mW in the whistler mode as the beam traversed the 200 m from the Shuttle to the PDP. The emissivity also decreased by about a factor of 10 over this same distance. The measured wave powers are 10 to the 7th greater than wave powers expected from incoherent Cerenkov radiation, verifying that the radiation is generated by a coherent process. Estimates of the emissivity based on measured electric field intensities in the beam indicate that the whistler-mode noise is produced by radiation from electron bunches created by an electrostatic beam-plasma instability.
Cross-bridge resistors added to comb and serpentine patterns. Improved combination of test structures built into integrated circuit used to evaluate design rules, fabrication processes, and quality of interconnections. Consist of meshing serpentines and combs, and cross bridge. Structures used to make electrical measurements revealing defects in design or fabrication. Combination of test structures includes three comb arrays, two serpentine arrays, and cross bridge. Made of aluminum or polycrystalline silicon, depending on material in integrated-circuit layers evaluated. Aluminum combs and serpentine arrays deposited over steps made by polycrystalline silicon and diffusion layers, while polycrystalline silicon versions of these structures used to cross over steps made by thick oxide layer.
The development of high T sub c superconducting thin films on various microwave substrates is of major interest in space electronic systems. Thin films of YBa2Cu3O(7-Delta) were formed on SrTiO3, MgO, ZrO2 coated Al2O3, and LaAlO3 substrates by multi-layer sequential evaporation and subsequent annealing in oxygen. The technique allows controlled deposition of Cu, BaF2 and Y layers, as well as the ZrO buffer layers, to achieve reproducibility for microwave circuit fabrication. The three layer structure of Cu/BaF2/Y is repeated a minimum of four times. The films were annealed in an ambient of oxygen bubbled through water at temperatures between 850 C and 900 C followed by slow cooling (-2 C/minute) to 450 C, a low temperature anneal, and slow cooling to room temperature. Annealing times ranged from 15 minutes to 5 hrs. at high temperature and 0 to 6 hr. at 450 C. Silver contacts for four probe electrical measurements were formed by evaporation followed with an anneal at 500 C. The films were characterized by resistance-temperature measurements, energy dispersive X-ray spectroscopy, X-ray diffraction, and scanning electron microscopy. Critical transition temperatures ranged from 30 K to 87 K as a function of the substrate, composition of the film, thicknesses of the layers, and annealing conditions. Microwave ring resonator circuits were also patterned on these MgO and LaAlO3 substrates.
The mission goals and instrumentation of the Soho and cluster spacecraft to be launched in 1995 as part of the international Solar-Terrestrial Science Program are discussed. Instruments such as normal-incidence, grazing-incidence, and EUV coronal spectrometers aboard the Soho spacecraft will study the origin of the solar wind and the physical properties of the solar atmosphere. The four Cluster spacecraft will measure electric and magnetic fields, plasmas, and energetic particles using instruments including a wide-band receiver system, a relaxation sounder, and a search coil magnetometer.