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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Reduction of Defects in Germanium-Silicon

It is well established that crystals grown without contact with a container have far superior quality to otherwise similar crystals grown in direct contact with a container. In addition to float- zone processing, detached-Bridgman growth is often cited as a promising tool to improve crystal quality, without the limitations of float zoning. Detached growth has been found to occur quite often during micro-g experiments and considerable improvements of crystal quality have been reported for those cases. However, no thorough understanding of the process or quantitative assessment of the quality improvements exists so far. This project will determine the means to reproducibly grow Ge-Si alloys in the detached mode. Specific objectives include: (1) measurement of the relevant material parameters such as contact angle, growth angle, surface tension, and wetting behavior of the GeSi-melt on potential crucible materials; (2) determination of the mechanism of detached growth including the role of convection; (3) quantitative determination of the differences of defects and impurities among normal Bridgman, detached Bridgman, and Floating Zone (FZ) growth; (4) investigation of the influence of defined azimuthal or meridional flow due to rotating magnetic fields on the characteristics of detached growth; (5) control time-dependent Marangoni convection in the case of FZ-growth by the use of a rotating magnetic field to examine the influence on the curvature of the solid-liquid interface and the heat and mass transport; and (6) grow high quality GeSi-single crystals with Si-concentration up to 10 at% and diameters up to 20 mm.

Szofran, Frank R.↗
NASA NTRS2000

Reduction of Defects in Germanium-Silicon

Crystals grown without contact with a container have far superior quality to otherwise similar crystals grown in direct contact with a container. In addition to float-zone processing, detached-Bridgman growth is a promising tool to improve crystal quality, without the limitations of float zoning. Detached growth has been found to occur frequently during microg experiments and considerable improvements of crystal quality have been reported for those cases. However, no thorough understanding of the process or quantitative assessment of the quality improvements exists so far. This project is determining the means to reproducibly grow Ge-Si alloys in the detached mode.

Szofran, F. R.↗
NASA NTRS2001

Reduction of Defects in Germanium-Silicon

Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in the crystals. In addition to float-zone processing, detached Bridgman growth, although not a completely crucible-free method, is a promising tool to improve crystal quality. It does not suffer from the size limitations of float zoning and the impact of thermocapillary convection on heat and mass transport is expected to be negligible. Detached growth has been observed frequently during (micro)g experiments. Considerable improvements in crystalline quality have been reported for these cases. However, neither a thorough understanding of the process nor a quantitative assessment of the quality of these improvements exists. This project will determine the means to reproducibly grow Pepsi alloys in a detached mode and seeks to compare processing-induced defects in Bridgman, detached-Bridgman, and floating-zone growth configurations in Pepsi crystals (Si less or = 10 at%) up to 20mm in diameter.

Szofran, Frank R.↗
NASA NTRS2001

Contact Angles and Surface Tension of Germanium-Silicon Melts

Precise knowledge of material parameters is more and more important for improving crystal growth processes. Two important parameters are the contact (wetting) angle and the surface tension, determining meniscus shapes and surface-tension driven flows in a variety of methods (Czochralski, EFG, floating-zone, detached Bridgman growth). The sessile drop technique allows the measurement of both parameters simultaneously and has been used to measure the contact angles and the surface tension of Ge(1-x)Si(x) (0 less than or equal to x less than or equal to 1.3) alloys on various substrate materials. Fused quartz, Sapphire, glassy carbon, graphite, SiC, carbon-based aerogel, pyrolytic boron nitride (pBN), AIN, Si3N4, and polycrystalline CVD diamond were used as substrate materials. In addition, the effect of different cleaning procedures and surface treatments on the wetting behavior were investigated. Measurements were performed both under dynamic vacuum and gas atmospheres (argon or forming gas), with temperatures up to 1100 C. In some experiments, the sample was processed for longer times, up to a week, to investigate any changes of the contact angle and/or surface tension due to slow reactions with the substrate. For pure Ge, stable contact angles were found for carbon-based substrates and for pBN, for Ge(1-x)Si(x) only for pBN. The highest wetting angles were found for pBN substrates with angles around 170deg. For the surface tension of Ge, the most reliable values resulted in gamma(T) = (591- 0.077 (T-T(sub m)) 10(exp -3)N/m. The temperature dependence of the surface tension showed similar values for Ge(1-x)Si(x), around -0.08 x 10(exp -3)N/m K, and a compositional dependence of 2.2 x 10(exp -3)N/m at%Si.

Croell, A.↗
NASA NTRS2003

X-Ray and Gamma-Ray Astronomy with NTD Germanium-based Microcalorimeters

We report on the performance of our NTD-Ge microcalorimeters. To date, the spectral resolution for x-ray and gamma-ray lines from radioactive sources and laboratory plasmas is 4.8 eV in the entire 1 - 6 keV band and 52 eV at 60 keV. Technical details responsible for this performance are presented as well as an innovative electro-thermal approach for enhancing count-rate capability.

Silver, E.↗
NASA NTRS2003

Microcalorimeters with Germanium Thermistors for High Resolution Soft and Hard X-ray Astronomy

This is a progress report for the first year of a three year Space Research and Technology (SR&T) grant to continue the advancement of neutron transmutation doped (NTD-based) microcalorimeters. We have re-prioritized certain aspects of the statement of work and chose to emphasize issues of array development in the first year rather than wait until year two. Consequently, some of the projects scheduled for the first year were delayed to the second year. Here we report on our progress to: a) Build and test a 1 x 4 element array and to investigate electrical and thermal cross-talk; b) Build a multiplexed 4 channel analog pulse processor; c) Build a digital pulse processor that can accommodate 4 channels with independent triggers; d) Develop a proportional thermal baseline restoration system compatible with the constant voltage mode of microcalorimeter operation.

Silver, E.↗
NASA NTRS2000

Laboratory Astrophysics and Microanalysis with NTD-Germanium-Based X-Ray Microcalorimeter

With the ability to create cosmic plasma conditions in the laboratory it is possible to investigate the dependencies of key diagnostic X-ray lines on density, temperature, and excitation conditions that exist in astrophysical sources with X-ray optics and a high resolution x-ray microcalorimeter. The same instrumentation can be coupled to scanning electron microscopes or x-ray fluorescence probes to analyze the elemental and chemical composition of electronic, biological, geological and particulate materials. We describe how our microcalorimeter and x-ray optics provide significantly improved capabilities for laboratory astrophysics and microanalysis.

Silver, E.↗
NASA NTRS2003

Reduction of Defects in Germanium-Silicon

Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in the crystals. In addition to float-zone processing, detached Bridgman growth, although not a completely crucible-free method, is a promising tool to improve crystal quality. It does not suffer from the size limitations of float zoning and the impact of thermocapillary convection on heat and mass transport is expected to be negligible. Detached growth has been observed frequently during g experiments. Considerable improvements in crystalline quality have been reported for these cases. However, neither a thorough understanding of the process nor a quantitative assessment of the quality of these improvements exists. This project will determine the means to reproducibly grow GeSi alloys in a detached mode and seeks to compare processing-induced defects in Bridgman, detached-Bridgman, and floating-zone growth configurations in GeSi crystals (Si less than or equal to 10 at%) up to 20mm in diameter. Specific objectives include: measurement of the relevant material parameters such as contact angle, growth angle, surface tension, and wetting behavior of the GeSi-melt on potential crucible materials; determination of the mechanism of detached growth including the role of convection; quantitative determination of the differences in defects and impurities for crystals grown using normal Bridgman, detached Bridgman, and floating zone (FZ) methods; investigation of the influence of a defined flow imposed by a rotating magnetic field on the characteristics of detached growth; control of time-dependent Marangoni convection in the case of FZ growth by the use of a rotating magnetic field to examine the influence on the curvature of the solid-liquid interface and the heat and mass transport; and growth of benchmark quality GeSi-single crystals.

Szofran, Frank R.↗
NASA NTRS2003

The Effect of the Traveling Magnetic Field (TMF) on the Buoyancy-Induced Convection in the Vertical Bridgman growth of Germanium

A traveling magnetic field (TMF) is created by means of applying out-of-phase currents to a number of coils. When applied to a conducting melt inside a cylindrical container, the TMF induces a Lorentz force that acts in the meridional directions (radial and axial), unlike the application of a rotating magnetic field (RMF), which creates a force in the azimuthal direction. In this work, we present a computational study of the TMF and its application to the Bridgman growth of the Ge. To quantify the effect of the TMF on the solid-melt interface, we use the maximum (magnitude-wise) tangential shear at the interface.

Yesilyurt, S.↗
NASA NTRS2004

Microcalorimeters with NTD and Expitaxial Germanium Thermistors for High Resolution X-Ray Spectroscopy

This is a progress report for the second year of a three year SR&T grant to continue the advancement of NTD-based microcalorimeters. We reported last year that we re-prioritized certain aspects of the statement of work and chose to emphasize issues of array development in the first year rather than wait until year two. Consequently, some of the projects scheduled for the first year were delayed to the second year and we report on those topics here. These include: a) Measurements that map out JFET , thermistor, l/f and feedback resistor noise; b) Investigations that evaluate the limits of the JFET preamplifier circuitry as it pertains to stability at the 2 eV level; The results of a) and b) have led to preliminary measurements that demonstrate 3.08 eV resolution at 6 keV. c) Calculations that can predict the current performance.

Silver, Eric↗
NASA NTRS2004

Detached Growth of Germanium by Directional Solidification

Detached crystal growth technique (dewetting) offers improvement in the quality of the grown crystals by preventing sticking to the walls of the crucible and thus reducing the possibility of parasitic nucleation and formation of lattice defects upon cooling. One of the factors relevant for the phenomena is the pressure differential across the meniscus at the crystal-melt interface. We investigated this effect experimentally. The growth took place in closed ampoules under the pressure of an inert gas (forming gas: 96% Ar + 4% H2). The pressure above the melt was adjustable and allowed for a control of the pressure difference between the top and bottom menisci. The crystals were characterized, particularly by taking profilometer measurements along the grown crystals surface. The effects of the experimental conditions on the detachment were compared with those predicted based on the theory of Duffar et al.

Palosz, W.↗
NASA NTRS2004

Detached Growth of Germanium by Directional Solidification

The conditions of detached solidification under controlled pressure differential across the meniscus were investigated. Uncoated and graphite- or BN-coated silica and pBN crucibles were used. Detached and partly detached growth was achieved in pBN and BN-coated crucibles, respectively. The results of the experiments are discussed based on the theory of Duffar et al.

Palosz, W.↗
NASA NTRS1999

Silicon-Germanium Fast Packet Switch Developed for Communications Satellites

Emerging multimedia applications and future satellite systems will require high-speed switching networks to accommodate high data-rate traffic among thousands of potential users. This will require advanced switching devices to enable communication between satellites. The NASA Lewis Research Center has been working closely with industry to develop a state-of-the-art fast packet switch (FPS) to fulfill this requirement. Recently, the Satellite Industry Task Force identified the need for high-capacity onboard processing switching components as one of the "grand challenges" for the satellite industry in the 21st century. In response to this challenge, future generations of onboard processing satellites will require low power and low mass components to enable transmission of services in the 100 gigabit (1011 bits) per second (Gbps) range.

Quintana, Jorge A.↗
NASA NTRS2010

Determining the Metal/Silicate Partition Coefficient of Germanium: Implications for Core and Mantle Differentiation.

Currently there are several hypotheses for the thermal state of the early Earth. Some hypothesize a shallow magma ocean, or deep magma ocean, or heterogeneous accretion which requires no magma ocean at all. Previous models are unable to account for Ge depletion in Earth's mantle relative to CI chondrites. In this study, the element Ge is used to observe the way siderophile elements partition into the metallic core. The purpose of this research is to provide new data for Ge and to further test these models for Earth's early stages. The partition coefficients (D(sub Ge) = c(sub metal)/c(sub silicate), where D = partition coefficient of Ge and c = concentration of Ge in the metal and silicate, respectively) of siderophile elements were studied by performing series of high pressure, high temperature experiments. They are also dependent on oxygen fugacity, and metal and silicate composition. Ge is a moderately siderophile element found in both the mantle and core, and has yet to be studied systematically at high temperatures. Moreover, previous work has been limited by the low solubility of Ge in silicate melts (less than 100 ppm and close to detection limits for electron microprobe analysis). Reported here are results from 14 experiments studying the partitioning of Ge between silicate and metallic liquids. The Ge concentrations were then analyzed using Laser Ablation Inductively Coupled Mass Spectrometry (LA-ICP-MS) which is sensitive enough to detect ppm levels of Ge in the silicate melt.

King, C.↗
NASA NTRS2011

Silicon-Germanium Voltage-Controlled Oscillator at 105 GHz

A group at UCLA, in collaboration with the Jet Propulsion Laboratory, has designed a voltage-controlled oscillator (VCO) created specifically for a compact, integrated, electronically tunable frequency generator useable for submillimeter- wave science instruments operating in extreme cold environments.

Wong, Alden↗
NASA NTRS2012

Reduction of Defects in Germanium-Silicon

Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Ge1-xSix crystals have been repeatedly grown detached in pBN crucibles. Detached-grown crystals exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction. Experiments have also been conducted to assess the effect of pressure differential across the meniscus in sealed crucibles. The experiments were in agreement with calculations which predicted that stable detachment will only occur in crucibles with a high wetting angle and over a relatively narrow range of pressure differential. Calculations also indicate that the conditions for stable detached growth are greatly expanded in a microgravity environment.

Volz, M. P.↗