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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Braiding for the win: Harnessing braiding statistics in topological states to play quantum games

Nonlocal quantum games provide proof of principle that quantum resources can confer an advantage at certain tasks. They also provide a compelling way to explore the computational utility of phases of matter on quantum hardware. In a recent paper [O. Hart et al., Phys. Rev. Lett. 134, 130602 (2025)], we demonstrated that a toric code resource state conferred advantage at a certain nonlocal game, which remained robust to small deformations of the resource state. In this paper we demonstrate that this robust advantage is a generic property of resource states drawn from topological or fracton ordered phases of quantum matter. To this end, we illustrate how several other states from paradigmatic topological and fracton ordered phases can function as resources for suitably defined nonlocal games, notably the three-dimensional toric-code phase, the X-cube fracton phase, and the double-semion phase. The key in every case is to design a nonlocal game that harnesses the characteristic braiding processes of a quantum phase as a source of contextuality. We unify the strategies that take advantage of mutual statistics by relating the operators to be measured to order and disorder parameters of an underlying generalized symmetry-breaking phase transition. Additionally, by connecting the win probability to twist products, we show that success at the game serves as a many-body entanglement witness. Namely, if the players implement a perfect quantum strategy on large length scales, the quantum state they share cannot be connected to a trivial product state via a constant-depth local unitary circuit. Lastly, we massively generalize the family of games that admit perfect strategies when codewords of homological quantum error-correcting codes are used as resources.

Fractons↗
DOE OSTI2026

Correlated purification for restoring 𝑁-representability in quantum simulation

Experimentally measured reduced density matrices (RDMs) often violate constraints that ensure they represent N-electron states—known as N-representability conditions—because of statistical and hardware noise. In this work, we present a correlated purification framework based on semidefinite programming to restore the accuracy of a noisy, unphysical two-electron RDM (2-RDM). The method performs a bi-objective optimization that minimizes both the many-electron energy and the nuclear norm of the correction to the measured 2-RDM. The nuclear norm, often employed in matrix completion, promotes low-rank corrections, while the energy term acts as a regularization term that can improve the purity of the ground state. While the method is particularly effective for ground states, it can also be applied to excited and nonstationary states by decreasing the weight of the energy relative to the error norm. In an application to fermionic shadow tomography of large hydrogen chains, correlated purification yields substantial reductions in both energy and 2-RDM error, achieving chemical accuracy across dissociation curves. This framework provides a robust strategy for tomography in many-body quantum simulations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Clifford Hierarchy Stabilizer Codes: Transversal Non-Clifford Gates and Magic States

A fundamental problem in fault-tolerant quantum computation is the tradeoff between universality and dimensionality, exemplified by the the Bravyi-König bound for $n$-dimensional topological stabilizer codes. In this work, we extend topological Pauli stabilizer codes to a broad class of $n$-dimensional Clifford hierarchy stabilizer codes. These codes correspond to the $(n+1)$D Dijkgraaf-Witten gauge theories with non-Abelian topological order. We construct transversal non-Clifford gates through automorphism symmetries represented by cup products. In 2D, we obtain the first transversal non-Clifford logical gates including T and CS for Clifford stabilizer codes, using the automorphism of the twisted $\mathbb{Z}_2^3$ gauge theory (equivalent to $\mathbb{D}_4$ topological order). We also combine it with the just-in-time decoder to fault-tolerantly prepare the logical T magic state in $O(d)$ rounds via code switching. In 3D, we construct a transversal logical $\sqrt{\text{T}}$ gate in a non-Clifford stabilizer code at the third level of the Clifford hierarchy, located on a tetrahedron corresponding to a twisted $\mathbb{Z}_2^4$ gauge theory. Furthermore, our constructions surpass the Bravyi-König bound by achieving the logical gates in the $(n+1)$-th level of Clifford hierarchy in $n$ spatial dimension.

Kobayashi, Ryohei [Institute for Advanced Study, P↗
DOE OSTI2025

Quantum Algorithms for Representation-Theoretic Multiplicities

Kostka, Littlewood-Richardson, Plethysm, and Kronecker coefficients are the multiplicities of irreducible representations in the decomposition of representations of the symmetric group that play an important role in representation theory, geometric complexity, and algebraic combinatorics. We give quantum algorithms for computing these coefficients whenever the ratio of dimensions of the representations is polynomial. We show that there is an efficient classical algorithm for computing the Kostka numbers under this restriction and conjecture the existence of an analogous algorithm for the Littlewood-Richardson coefficients. We argue why such classical algorithm does not straightforwardly work for the Plethysm and Kronecker coefficients and conjecture that our quantum algorithms lead to superpolynomial speedups. The conjecture about Kronecker coefficients was disproved by Panova [Polynomial time classical versus quantum algorithms for representation theoretic multiplicities, arXiv:2502.20253] with a classical algorithm which, if optimal, points to a 𝒪⁡(𝑛 4+2⁢𝑘 ) vs $\tilde{Ω}$⁡(𝑛 4⁢𝑘 2 +1 ) polynomial gap in quantum vs classical computational complexity for an integer parameter 𝑘.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Improved Dark Photon Sensitivity from a Superconducting-Radio-Frequency-Cavity Experiment

We report the refined dark-photon exclusion bound from Dark SRF’s pathfinder run. Our new result is driven by improved theoretical modeling of frequency instability in high-quality resonant experiments. Our analysis leads to a constraint that is an order of magnitude stronger than previously reported (corresponding to a signal-to-noise ratio that is 4 orders of magnitude larger). This result represents the world-leading constraint on non-dark-matter dark photons over a wide range of masses below 6 μ⁢eV and translates to the best laboratory-based limit on the photon mass 𝑚 𝛾 < 2.9 × 10 −48 g.

Kalia, Saarik [Univ. of Minnesota, Minneapolis, MN↗
DOE OSTI2025

Playing Nonlocal Games across a Topological Phase Transition on a Quantum Computer

Many-body quantum games provide a natural perspective on phases of matter in quantum hardware, crisply relating the quantum correlations inherent in phases of matter to the securing of quantum advantage at a device-oriented task. In this Letter, we introduce a family of multiplayer quantum games for which topologically ordered phases of matter are a resource yielding quantum advantage. Unlike previous examples, quantum advantage persists away from the exactly solvable point and is robust to arbitrary local perturbations, irrespective of system size. We demonstrate this robustness experimentally on Quantinuum’s H1-1 quantum computer by playing the game with a continuous family of randomly deformed toric code states that can be created with constant-depth circuits leveraging midcircuit measurements and unitary feedback. We are thus able to tune through a topological phase transition—witnessed by the loss of robust quantum advantage—on currently available quantum hardware. This behavior is contrasted with an analogous family of deformed Greenberger-Horne-Zeilinger states, for which arbitrarily weak local perturbations destroy quantum advantage in the thermodynamic limit. Lastly, we discuss a topological interpretation of the game, which leads to a natural generalization involving an arbitrary number of players.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2025

Variational Simulation of the Lipkin-Meshkov-Glick Model on a Neutral Atom Quantum Computer

We simulate the Lipkin-Meshkov-Glick model using the variational-quantum-eigensolver algorithm on a neutral atom quantum computer. We test the ground-state energy of spin systems with up to 15 spins. Two different encoding schemes are used: an individual spin encoding where each spin is represented by one qubit, and an efficient Gray code encoding scheme that only requires a number of qubits that scales with the logarithm of the number of spins. This more efficient encoding, together with zero-noise extrapolation techniques, is shown to improve the fidelity of the simulated energies with respect to exact solutions.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

New Roadmap for Microelectronics: Charting the Semiconductor Industry's Path Over the Next 5, 10, and 20 Years

In the past, the role of strategic planning for semiconductor industry was met by the International Technology Roadmap for Semiconductors (ITRS), serving as a guiding light that provided manufacturers, designers, equipment suppliers, and researchers with direction years in advance. By providing a common framework for coordination across semiconductor industry stakeholders, technology development efforts were efficient and aligned. However, the dissolution of the ITRS in 2015 left a void, leading to years of disjointed efforts. Recognizing the need for unified guidance, the industry rallied for the creation of a new strategic plan, the Microelectronics and Advanced Packaging Technologies (MAPT) Roadmap (2023) was developed, through the efforts of hundreds of industry, academic and government experts, to provide detailed strategies for achieving these goals. This comprehensive plan outlines ambitious goals for the industry's future.

HPC, Roadmap, AI, Liquid Cooling, Power, Silicon, ↗
DOE OSTI2025

Towards Scalable 3D Integration of 2T-nC FeRAM with Hundreds of Layer Stacking

In this article, we study the limits of the number of capacitors and read history dependence in a 2T-nC ferroelectric random-access memory (FeRAM) cell, paving the way for its high-density integration toward hundreds of stacked layers. Through a comprehensive experimental and simulation study on the scaling behavior of the 2T-nC FeRAM architecture, we demonstrate: (i) successful fabrication of 2T-64C cells with robust memory operation and clearly distinguishable ‘0’ and ‘1’ states, even in 64- capacitor configurations; (ii) that the parasitic capacitance of the floating node originates predominantly from the linear component of the ferroelectric capacitor, and its impact on n-scaling—due to degraded sense margin—can be mitigated by floating unselected capacitors with enough TΩ isolation; (iii) that sharing write and read transistors among n capacitors introduces a read history dependence issue due to fluctuating floating node voltage (VFN); and (iv) that a proposed FN discharge scheme can effectively eliminate read-sequence dependence, at the cost of reduced read endurance.

36 MATERIALS SCIENCE↗
DOE OSTI2024

On the Origin of Holes During Polarization Reset in Floating Body Ferroelectric FETs Towards Improving Switching Efficiency

In this article, we performed a comprehensive combined experimental and modeling study on the polarization reset mechanisms of floating body (i.e., channel) ferroelectric FETs, an important class of device with growing interests due to added functionalities and improved reliabilities. Using fully-depleted silicon-on-insulator (FDSOI) FeFET as a classical example, we demonstrate that: 1) without hole generation mechanisms, floating body FeFETs during reset is simply a capacitor divider, with negligible ferroelectric voltage drop for switching; ii) Band-to-band-tunneling (BTBT) around gate-to-S/D overlap even with zero drain bias generates holes to facilitate the reset in FDSOI FeFET, though at a slower speed and hold the reset state; iii) With scaling, S/D inner fringe field can enable fast reset, thus offering a potential efficiency boost approach; iv) a compact FDSOI FeFET model is developed that can capture the BTBT effect and reproduce the observed behaviors; v) the reset mechanism is also validated in a NAND string composed of FDSOI FeFETs, demonstrating its relevant applications. These insights show the strategies in improving reset efficiency, i.e., enhanced BTBT and inner fringe field.

42 ENGINEERING↗
DOE OSTI2024

First Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and its Scalability for High-Density 3D Ferroelectric Capacitor Memory

In this article, we perform a comprehensive experimental and modeling study into the scaling of vertical 2T-nC ferroelectric random-access memory (FeRAM) hybrid cell to demonstrate a high performance and high-density 3D capacitor memory. We demonstrate: i) first time successful integration of the vertical 2T-3C FeRAM cell by stacking the vertical metal-ferroelectricmetal (MFM) stack on top of Si CMOS transistors; ii) successful experimental operation of the memory cell, including the quasi-nondestructive read out (QNRO) of the polarization without write back after 106 read cycles; iii) the write bit line (WBL) heavily screens the coupling between neighboring strings, making it a minor concern; V ) aggressive stacking of the WBLs, i.e., number of MFMs in a string, could facilitate the self-boosting during write operation due to ferroelectric linear capacitance (CFE), which allows self-boosted inhibition for Vw/2 scheme and worsens the Vw/3 scheme as disturb increases to intolerable 2Vw/3; v) aggressive horizontal scaling significantly increases the read disturb to cells on neighboring planes due to capacitance between two WBLs (Cz).

42 ENGINEERING↗
DOE OSTI2025

Understanding Reliability Trade-Offs in 1T-nC and 2T-nC FeRAM Designs

Ferroelectric random access memory (FeRAM) is a promising candidate for energy-efficient nonvolatile memory, particularly for logic-in-memory and compute-in-memory (CIM) applications. Among the available cell architectures, One-Transistor–n-Capacitor (1T-nC) and two-transistor–n-capacitor (2T-nC) FeRAMs each offer distinct trade-offs in density, scalability, and reliability. In this work, we present a comparative study of these two architectures under both dimensional scaling ( XY/Z shrinkage) and vertical integration (increasing stacked capacitors per cell). Using technology computer-aided design (TCAD) and circuit-level simulations, we analyze how scaling impacts ferroelectric capacitance, parasitic coupling, and floating-node (FN) dynamics, which together dictate sense margin (SM) and read stability. A key mitigation strategy—floating unselected capacitors—is applied to both architectures, effectively decoupling the SM from the number of stacked capacitors and enabling tractable analysis across scaling regimes. Results show that 1T-nC suffers more from charge sharing with the bitline (BL), while 2T-nC benefits from transistor isolation and stronger low-voltage sensing at the cost of increased area. By systematically evaluating these behaviors across scaling directions, this work establishes the reliability trade-offs of 1T-nC and 2T-nC cells and provides design guidelines for high-density, vertically integrated FeRAM systems.

1T-nC↗
DOE OSTI2025

Single-Cell Universal Logic-in-Memory Using 2T-nC FeRAM: An Area and Energy-Efficient Approach for Bulk Bitwise Computation

This work presents a novel approach to configure 2T-nC ferroelectric RAM (FeRAM) for performing single cell logic-in-memory operations, highlighting its advantages in energy-efficient computation over conventional DRAM-based approaches. Unlike conventional 1T-1C dynamic RAM (DRAM), which incurs refresh overhead, 2T-nC FeRAM offers a promising alternative as a non-volatile memory solution with low energy consumption. Our key findings include the potential of quasi-nondestructive readout (QNRO) sensing in 2T-nC FeRAM for logic-in-memory (LiM) applications, demonstrating its inherent capability to perform inverting logic without requiring external modifications, a feature absent in traditional 1T-1C DRAM. We successfully implement the MINORITY function within a single cell of 2T-nC FeRAM, enabling universal NAND and NOR logic, validated through SPICE simulations and experimental data. Additionally, the research investigates the feasibility of 3D integration with 2T-nC FeRAM, showing substantial improvements in storage and computational density, facilitating bulk-bitwise computation. Our evaluation of eight real-world, data-intensive applications reveals that 2T-nC FeRAM achieves 2× higher performance and 2.5× lower energy consumption compared to DRAM. Furthermore, the thermal stability of stacked 2T-nC FeRAM is validated, confirming its reliable operation when integrated on a compute die. These findings emphasize the advantages of 2T-nC FeRAM for LiM, offering superior performance and energy efficiency over conventional DRAM.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and Its Scalability for High-Density 3-D Ferroelectric Capacitor Memory

In this work, we present a comprehensive experimental and modeling study on the scaling of vertical 2T-nC ferroelectric random access memory (FeRAM) hybrid cells, comprising n metal-ferroelectric–metal (MFM) capacitors, to demonstrate a high-performance and high-density 3-D capacitor memory. Our contributions include: 1) successful process integration of vertical 2T-3C FeRAM cells by stacking MFM structures on top of Si CMOS transistors; 2) experimental validation of memory cell functionality, confirming the feasibility of the vertical 2T-nC FeRAM architecture; 3) an analysis of scaling effects on parasitic capacitance in densely integrated 3-D arrays, using 3-D technology computer-aided design (TCAD) simulations; 4) exploration of aggressive stacking of write bitlines (WBLs) to enhance memory density, where ferroelectric linear capacitance ( C FE ) enables self-boosted inhibition under the V W /2 scheme, but renders the V W /3 scheme ineffective due to intolerable write disturbances; and 5) assessment of horizontal scaling, revealing significant increases in read disturbances caused by interplane capacitance between adjacent WBLs ( C Z ). This work represents an early exploration into the potential of 2T-nC FeRAM as a scalable and efficient 3-D memory solution.

42 ENGINEERING↗
DOE OSTI2025

Toward Mixed Analog-Digital Quantum Signal Processing: Quantum AD/DA Conversion and the Fourier Transform

Signal processing stands as a pillar of classical computation and modern information technology, applicable to both analog and digital signals. Recently, advancements in quantum information science have suggested that quantum signal processing (QSP) can enable more powerful signal processing capabilities. However, the developments in QSP have primarily leveraged digital quantum resources, such as discrete-variable (DV) systems like qubits, rather than analog quantum resources, such as continuous-variable (CV) systems like quantum oscillators. Consequently, there remains a gap in understanding how signal processing can be performed on hybrid CV-DV quantum computers. Here we address this gap by developing a new paradigm of mixed analog-digital QSP. We demonstrate the utility of this paradigm by showcasing how it naturally enables analog-digital conversion of quantum signals—specifically, the transfer of states between DV and CV quantum systems. We then show that such quantum analog-digital conversion enables new implementations of quantum algorithms on CV-DV hardware. This is exemplified by realizing the quantum Fourier transform of a state encoded on qubits via the free-evolution of a quantum oscillator, albeit with a runtime exponential in the number of qubits due to information theoretic arguments. Collectively, this work marks a significant step forward in hybrid CV-DV quantum computation, providing a foundation for scalable analog-digital signal processing on quantum processors.

42 ENGINEERING↗
DOE OSTI2025

Surface conduction and reduced electrical resistivity in ultrathin noncrystalline NbP semimetal

The electrical resistivity of conventional metals such as copper is known to increase in thin films as a result of electron-surface scattering, thus limiting the performance of metals in nanoscale electronics. Here, in this study, we find an unusual reduction of resistivity with decreasing film thickness in niobium phosphide (NbP) semimetal deposited at relatively low temperatures of 400°C. In films thinner than 5 nanometers, the room temperature resistivity (~34 microhm centimeters for 1.5-nanometer-thick NbP) is up to six times lower than the resistivity of our bulk NbP films, and lower than conventional metals at similar thickness (typically about 100 microhm centimeters). The NbP films are not crystalline but display local nanocrystalline, short-range order within an amorphous matrix. Our analysis suggests that the lower effective resistivity is caused by conduction through surface channels, together with high surface carrier density and sufficiently good mobility as the film thickness is reduced. These results and the fundamental insights obtained here could enable ultrathin, low-resistivity wires for nanoelectronics beyond the limitations of conventional metals.

42 ENGINEERING↗
DOE OSTI2022

Alpine disk failure dataset

This dataset consists of 4114 disk failure events collected from Alpine from 07/01/2019 to 04/18/2022. Individual events are identified by their timestamp in ISO 8601 format, rack and enclosure where the failed disk is located.

97 MATHEMATICS AND COMPUTING↗