Search NASA⌕ Search

SEARCH · Search NASA

Results for “Microelectronic”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 307 records · Page 17

Graphical User Interface for a Biasing Board for the PSEC6

The PSEC6 is an application-specific integrated circuit (ASIC) designed for a readout system for a large area picosecond photodetector (LAPPD). The PSEC6 is currently in fabrication and pending testing. The testing system for the PSEC5, the previous iteration of the ASIC, required expensive and non-portable equipment, because the ASIC needs twelve adjustable reference voltages. The new testing system consists of an low-cost, open-source, cross-platform graphical user interface (GUI), a digital system, and a biasing board. The digital system is the interface between the GUI and biasing board, and can be implemented on a microcontroller or field-programmable gate array (FPGA). The biasing board contains twelve digital-to-analog converters (DACs) that are configurable via the GUI, which gives users the ability to write voltage values to all or specific DACs. The GUI was developed in C on Linux using the widget library GTK4 and cross-compiled for Windows compatibility. I2C and SPI protocols were implemented on an Adafruit Feather ESP32-S3 microcontroller to write commands to the DACs and PSEC6. A hardware implementation of the I2C protocol is in development on an FPGA. Since LAPPDs will be used by the Accelerator Neutrino Neutron Interaction Experiment (ANNIE) at Fermilab, the PSEC6 testing system in this internship project can potentially benefit future neutrino research. The project is relevant to the Department of Energy’s microelectronics mission, because the PSEC6 is an ASIC that will handle fast time signals arriving from the detector for readout. It also provided experience with building a cross-platform user interface, practicing digital design and implementation in hardware description language (HDL), and using simulations to inform new design iterations.

Guerrero, Sasha Camila [North Central Coll.]↗

Automated Non-Destructive Mechanical Testing of Fine Pitch Wirebond Arrays

This is the required paper summarizing the poster presentation material to be presented at The 25th European Microelectronics & Packaging Conference (EMPC 2025) (16 – 18 September 2025). The paper will be associated with the conference presentation in the conference proceedings

Menk, Lyle Alexander [Sandia National Laboratories↗

Revealing the Full Potential of Glycolated Mixed Ionic-Electronic Semiconductors – Symmetric Monomer Polymerization to Boost Electrochemical Transistor Performance

Organic electrochemical transistors (OECTs) enable the transduction of ionic signals into electronic outputs, positioning them as ideal candidates for next-generation sensing and (bio)signal processing applications. Recent years have witnessed the development of various OECT channel materials, affording insights into structural fine-tuning to achieve optimal performance and/or stability. However, homocouplings, commonly present in alternating conjugated polymers, have largely been overlooked. This study investigates the effect of homocoupling on OECT materials by employing two synthesis methods – standard Stille polymerization and an alternative symmetric approach – to create the p-type enhancement-mode benchmark polymer pgBTTT. The impact of homocoupling, and its absence, is studied by comparing the bulk properties of the two polymers and evaluating their respective OECT metrics. The new, homocoupling-free polymer exhibits a notably improved OECT performance ( μC *), mainly due to an average 3-fold increase in electronic mobility (μ).

defects↗

CUPID, the Cuore upgrade with particle identification

CUPID, the CUORE Upgrade with Particle Identification, is a next-generation experiment to search for neutrinoless double beta decay (0 νββ ) and other rare events using enriched Li 2 100 MoO 4 scintillating bolometers. It will be hosted by the CUORE cryostat located at the Laboratori Nazionali del Gran Sasso in Italy. The main physics goal of CUPID is to search for 0 νββ of 100 Mo with a discovery sensitivity covering the full neutrino mass regime in the inverted ordering scenario, as well as the portion of the normal ordering regime with lightest neutrino mass larger than 10 meV. With a conservative background index of 10 −4 cts/(keV·kg·yr), 240 kg isotope mass, 5 keV FWHM energy resolution at 3 MeV and 10 live-years of data taking, CUPID will have a 90% C.L. half-life exclusion sensitivity of 1.8 · 10 27 yr, corresponding to an effective Majorana neutrino mass ( m ββ ) sensitivity of 9–15 meV, and a 3σ discovery sensitivity of 1 · 10 27 yr, corresponding to an m ββ range of 12–21 meV.

Alfonso, K. [Virginia Polytechnic Institute and St↗

Publisher Erratum: CUPID, the Cuore upgrade with particle identification

Publisher Erratum: Eur. Phys. J. C (2025) 85:737 https://doi.org/10.1140/epjc/s10052-025-14352-1 The author M. Pavan (affiliations 9 and 10) was missing from the published author list. The online version of the article has been updated to include the author. Additionally, affiliations 4 and 17 have been corrected to reflect the proper institutional order. The publisher apologizes for the inconvenience caused.

Alfonso, K. [Virginia Polytechnic Institute and St↗

A gravity-based mounting approach for large-scale cryogenic calorimeter arrays

Cryogenic calorimeters are among the leading technologies for searching for rare events. The CUPID experiment is exploiting this technology to deploy a tonne-scale detector to search for neutrinoless double-beta decay of 100 Mo. The CUPID collaboration proposed an innovative approach to assembling cryogenic calorimeters in a stacked configuration, held in position solely by gravity. This gravity-based assembly method is unprecedented in the field of cryogenic calorimeters and offers several advantages, including relaxed mechanical tolerances and simplified construction. To assess and optimize its performance, we constructed a medium-scale prototype hosting 28 Li 2 MoO 4 crystals and 30 Ge light detectors, both operated as cryogenic calorimeters at the Laboratori Nazionali del Gran Sasso (Italy). Despite an unexpected excess of noise in the light detectors, the results of this test proved (i) a thermal stability better than ±0.5 mK at 10 mK, (ii) a good energy resolution of Li 2 MoO 4 cryogenic calorimeters, (6.6 ± 2.2) keV FWHM at 2615 keV, and (iii) a Li 2 MoO 4 light yield measured by the closest light detector of 0.36 keV/MeV, sufficient to guarantee the particle identification requested by CUPID.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Publisher Erratum: A gravity-based mounting approach for large-scale cryogenic calorimeter arrays

In the originally published version of this article, several errors were identified in the author list and acknowledgements section. These have now been corrected as follows: Corrections to the Author List: Barrera has been corrected to Barresi. Copello (affiliation 18) has been corrected to Copello (affiliation 19). F. De Domizio has been corrected to S. Di Domizio. Figueros-Feliciamo has been corrected to Figueroa-Feliciano. Mancarella (affiliations 8, 17) has been corrected to Mancarella (affiliations 8, 18). Manenti (affiliations 18, 19) has been corrected to Manenti (affiliations 19, 20). Mayer (affiliations 3, 20, 31) has been corrected to Mayer (affiliations 3, 21, 31). Pagot has been corrected to Pageot. Puranam (affiliation 20) has been corrected to Puranam (affiliation 21). O. Penek has been corrected to Ö. Penek. L. Pettinacci has been corrected to V. Pettinacci. P. Pirro has been corrected to S. Pirro. Previtale has been corrected to Previtali. Rappoldi (affiliation 18) has been corrected to Rappoldi (affiliation 19). Raselli (affiliation 18) has been corrected to Raselli (affiliation 19). Rizzoli (affiliations 8, 17) has been corrected to Rizzoli (affiliations 8, 18). Rossella (affiliation 18) has been corrected to Rossella (affiliation 19). Correction to the Acknowledgements Section: The following grant numbers were missing and have now been added: This work was supported by NSF-PHY-2412377 and NSF-PHY-1913374. Additionally, on page 11, Section 5, second line, the chemical formula was incorrectly given as Li 2 MO 4 . The correct formula is Li 2 MoO 4 . The original article has been updated to reflect these corrections. The publisher apologizes for the inconvenience.

Alfonso, K. [Virginia Polytechnic Institute and St↗

Sensitivity of the CUPID experiment to $0\nu \beta \beta$ decay of 100 Mo

CUPID is a next-generation bolometric experiment to search for neutrinoless double-beta decay ($0\nu \beta \beta$ ) of 100 Mo using Li 2 MoO 4 scintillating crystals. It will operate 1596 crystals at ~10 mK in the CUORE cryostat at the Laboratori Nazionali del Gran Sasso in Italy. Each crystal will be facing two Ge-based bolometric light detectors for α rejection. We compute the discovery and the exclusion sensitivity of CUPID to $0\nu \beta \beta$ in a Frequentist and a Bayesian framework. This computation is done numerically based on pseudo-experiments. For the CUPID baseline scenario, with a background and an energy resolution of 1.0 x 10 –4 counts/keV/kg/yr and 5 keV FWHM at the Q-value, respectively, this results in a Bayesian exclusion sensitivity (90% c.i.) of $\hat{T}_{1/2} > 1.6 \times 10^{27} \ \textrm{yr}$, corresponding to the effective Majorana neutrino mass of $\hat{m}_{\beta \beta } < \ 9.6$ – 28 meV. The Frequentist discovery sensitivity (3σ ) is $\hat{T}_{1/2}= 1.0 \times 10^{27} \ \textrm{yr}$, corresponding to $\hat{m}_{\beta \beta }= \ 12$ – 36 meV.

Alfonso, K. [Virginia Polytechnic Institute and St↗

SnSe 1-x S x Alloys: Anisotropic Van der Waals Semiconductors with Tunable Bandgaps

Alloying is one of the main tools of bandgap engineering, allowing the tuning of crystal structure, lattice parameters, and electronic structure of 3D and 2D/layered semiconductors. Among the latter, it can play a key role in tailoring the properties of tin monochalcogenides, a class of van der Waals semiconductors of interest for optoelectronics, thermoelectrics, ferroelectrics, and valleytronics. Here, the study investigates the synthesis and properties of large flakes of the anion substitution alloys SnSe 1-x S x . Alloy flakes across a wide range of compositions are obtained systematically by repeated growth from the same mixed (SnS, SnSe) powder precursor. Combined experiment and theory show full miscibility for all compositions, along with tunable lattice constants, bandgaps, and vibrational modes. Atomic resolution imaging demonstrates the accumulation of S and Se in alternating layers in the SnSe 1-x S x unit cell, attributed to growth kinetics. Polarized Raman spectroscopy confirms anisotropic vibrational modes; the calculated and measured band structure shows systematic changes in the band edge energies and anisotropic electronic structure due to the anisotropic in-plane lattice of the monochalcogenides. Cathodoluminescence, finally, indicates that a unique configuration of two non-degenerate, direct valleys along orthogonal k-space directions persists all the way from SnS to SnSe, making SnSe 1-x S x alloys interesting for valleytronics.

36 MATERIALS SCIENCE↗

Correlated X‐Ray and Electron Microscopies of a Single Biphasic GaAs Nanowire

Engineering the properties of semiconductors by changing their crystalline phase is a technologically and economically relevant alternative to doping using foreign elements, with strong potential for photonic and electronic applications. Although major advances have been reported recently for crystal‐phase engineering of III‐V and group IV semiconductor nanowires, interfacing two mismatched crystalline phases in a nanostructure induces several deformation mechanisms, which remain largely unexplored. Here, using state‐of‐the‐art synchrotron X‐ray nanobeam diffraction and transmission electron microscopy, subtle twisting and bending is unveiled within an individual GaAs nanowire containing cubic and hexagonal segments. Their role is discussed in accommodating the inter‐reticular spacing fluctuations, and their variations are correlated to the nanoscale phase distribution and to the effect of the NW support. This study brings direct evidence of a complex combination of deformation mechanisms in biphasic nanowires, which opens a new path to tune the nanowire properties with appealing perspectives for device engineering in nanophotonics and nanomechanics.

III-V semiconductors↗

Two-fluid physical modeling of superconducting resonators in the ARTEMIS framework

In this work, we implement a new London equation module for superconductivity in the GPU-enabled ARTEMIS framework, and couple it to a finite-difference time-domain solver for Maxwell's equations. We apply this two-fluid approach to model a superconducting coplanar waveguide (CPW) resonator. We validate our implementation by verifying that the theoretical skin depth and reflection coefficients can be obtained for several superconductive materials, with different London penetration depths, over a range of frequencies. Our convergence studies show that the algorithm is second-order accurate in both space and time, except at superconducting interfaces where the approach is spatially first-order. In our CPW simulations, we leverage the GPU scalability of our code to compare the two-fluid model to more traditional approaches that approximate superconducting behavior and demonstrate that superconducting physics can show comparable performance to the assumption of quasi-infinite conductivity as measured by the Q-factor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Sub-1K Cold-Electron Quantum Well Switching at Room Temperature

Quantum states can provide means to systematically manipulate the transport of electrons. Here, in this study, we present electron transport across quasi-bound states of two heterogeneous quantum wells (QWs), where the transport of thermally excited electrons is blocked or enabled depending on the relative positions of the two quasi-bound states, with an abrupt current onset occurring when the two QW states align. The QW switch comprises a source (Cr), QW1 (Cr 2 O 3 ), QW2 (SnO x , x < 2), a tunneling barrier (SiO 2 ), and a drain (Si), where the effective electron mass of QW1 (m* QW1 ) is selected to be larger than QW2 (m* QW2 ). The current-voltage (I-V) measurements of the fabricated devices show abrupt current onsets, with the current transition occurring within 0.25 mV, corresponding to an effective electron temperature of 0.8 K at room temperature. Since transistor power consumption is fundamentally tied to effective electron temperature, this sub-1K cold-electron QW switching holds promise for highly energy-efficient computing.

Fermi−Dirac thermal smearing↗

Influence of Disorder on the Electronic Properties and Magnetotransport of Ti 3 C 2 T x Single-Flake Devices

The exploration of MXenes for electronic applications is a rapidly growing field in materials science. However, most research has focused on MXene films, with only a limited number of studies addressing the characterization of single-flake devices. In this work, we investigate the electronic and magnetotransport properties of Ti 3 C 2 T x single-flake devices, exploring the influence of structural defectivity on their transport mechanisms. We show that negative magnetoresistance present at low temperatures in single flake samples arises from weak localization, which we analyze to extract the phase coherence length of single-layer and multi-layer flakes. The study of magnetoresistance for this metallic MXene shows that the material exhibits quantum transport phenomena when intrinsic electronic behavior dominates. Moreover, by increasing the defect density via thermal annealing in ultrahigh vacuum, we uncover and characterize the metal-to-disordered metal transition in Ti 3 C 2 T x , shedding light on new properties and enriching fundamental knowledge about MXenes.

MXenes↗

High-Performance Solid-State Lithium-Ion Battery with Mixed 2D and 3D Electrodes

It is well established that the miniaturization of batteries has not kept pace with the miniaturization of electronics. Three-dimensional (3D) batteries, which were developed with the intent of improving microbattery performance, have had limited success because of fabrication challenges and material constraints. Solid-state, 3D batteries have been particularly susceptible to these shortcomings. In this paper we demonstrate that the incorporation of a high conductivity, solid electrolyte is the key to achieving a non-planar solid-state battery with high areal-capacity and high power-density. The model, 2.5D platform used in this study is a modification of the more typical 3D configuration in that it is comprised of a cathode array of pillars (3D) and a planar (2D) anode. This 2.5D geometry exploits the use of a high conductivity, ionogel electrolyte (10 -3 S cm -1 ) which interpenetrates the 3D electrode array. The 2.5D battery offers high areal energy densities from the post array while the high-conductivity, solid electrolyte enables high power densities (3.7 mWh cm -2 at 2.8 mW cm -2 ). Here, the reported solid-state 2.5D device exceeds the energy and power densities of any 3D solid-state system and the derived multiphysics model provides guidance for achieving significantly higher energy and power densities.

2.5D batteries↗

Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions

AlScN is attractive as a lattice-matched epitaxial barrier layer for incorporation in GaN high electron mobility transistors due to its large dielectric constant and polarization. The transport properties of polarization-induced two-dimensional (2D) electron gas of densities of ∼2×10 13 /cm 2 formed at the AlScN–GaN interface is studied by Hall-effect measurements down to cryogenic temperatures. The 2D electron gas densities exhibit mobilities limited to ∼300 cm 2 /V s down to 10 K at AlScN/GaN heterojunctions. The insertion of a ∼2 nm AlN interlayer boosts the room temperature mobility by more than five times from ∼300 cm 2 /V s to ∼1573 cm 2 /V s, and the 10 K mobility by more than 20 times to ∼6980 cm 2 /V s at 10 K. These measurements provide guidelines to the limits of electron conductivities of these highly polar heterostructures.

42 ENGINEERING↗