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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Ziti is a NOODLES client application for RealityKit-powered devices (specifically the Apple Vision Pro). NOODLES is a cross-platform/device/tool protocol for collaborative visualization. NOODLES was Developed at the National Renewable Energy Laboratory (NREL) as a capability of the Insight Center https://www.nrel.gov/computational-science/insight-center.html
This document summarizes the progress of VTO battery R&D projects supported during the fiscal year 2020 (FY 2020). In FY 2020, the DOE VTO battery R&D funding was approximately $110 million. Its R&D focus was on the development of high-energy batteries for EVs as well as very high-power devices for hybrid vehicles.
FLEXO (Flux-Limited Extended-MHD Ohm's Law) is a production-line multiphysics code developed at Sandia to enable more predictive modeling of target physics on pulsed-power devices. FLEXO uses an extended magnetohydrodynamics (XMHD) model which includes a generalized Ohm's law (GOL), an electron inertia term, and Hall physics. This report describes the code's numerical methods, its computational performance, and test problems of interest.
This document summarizes the progress of VTO battery R&D projects supported during the fiscal year 2021 (FY 2021). In FY 2021, the DOE VTO battery R&D funding was approximately $\$$115 million. Its R&D focus was on the development of high-energy batteries for EVs as well as very high-power devices for hybrid vehicles. The electrochemical energy storage roadmap (which can be found at the EERE Roadmap web page2) describes ongoing and planned efforts to develop electrochemical storage technologies for EVs. To advance battery technology, which can in turn improve market penetration of PEVs, the program investigates various battery chemistries to overcome specific technical barriers, e.g., battery cost, performance, life (both the calendar life and the cycle life), its tolerance to abusive conditions, and its recyclability/sustainability. VTO R&D has had considerable success, lowering the cost of EV battery packs to $\$$185/kWh in 2019 (representing more than 80% reduction since 2008) yet even further cost reduction is necessary for EVs to achieve head-to-head cost competitiveness with ICEs (without Federal subsidies). In addition, today’s batteries also need improvements in such areas as their ability to accept charging at a high rate, referred to as extreme fast charging (XFC) (15 minute charge) – to provide a “refueling” convenience similar to ICEs, and the ability to operate adequately at low temperatures. Research into “next-gen lithium-ion” batteries which would provide such functionalities is one of the R&D focus areas. VTO is funding research on both “next gen” chemistries (which employ an alloy anode and/or a high voltage cathode) and beyond lithium-ion (BLI) chemistries (which can, for example, employ a lithium metal anode).
X-ray topography measurements on a 100 mm diameter GaN boule grown by the Near Equilibrium AmmonoThermal method revealed an improvement in dislocation density from >1 × 10 6 cm -2 to between 2 × 10 5 and 5 × 10 5 cm -2, an improvement greater than two to five times from seed to growth. This data builds on previous X-ray diffraction and defect selective etching to quantify the reduction in defect density that is closely associated with increasing growth thickness. This result indicates that there is a pathway to further dislocation reduction by increasing growth thickness for GaN crystals including those of 100 mm or larger diameter. Further reduction of the dislocation density of large-area substrates will lead to GaN power devices with reduced leakage current under reverse bias and better device performance.
Intense efforts are currently in progress to study various sources of basal plane dislocations (BPDs) in SiC epitaxial layers. BPDs can generate Shockley-type stacking faults (SSFs) in SiC epitaxial layers, which have been shown to be associated with the degradation of power devices. This study shows that the star-shaped defect can be a source of several BPDs in the epitaxial layer. We investigate the complex microstructure of the star defect, the generation of BPDs, and expansion of SSFs using various complementary microscopy and optical techniques. We show direct evidence that star-defects can be a nucleation point of single-SSFs that can expand at the core of the defect. Newly found secondary dislocation arrays extending over a few centimeters away are found to be emanating from the primary arms of the star defect. The presence of such dislocation walls and the expansion of single-SSFs will affect the yield of numerous die on a wafer. Further understanding of the formation mechanism of stacking faults generated from star-defects as provided in this study helps understand their effect on SiC-based devices, which is crucial to assess device reliability.
Releasing device, powered by a drill motor through an adjustable speed reducer, has a spinning release head with three retractable spring-loaded fingers. The fingers are retracted by manual triggering of a cable at the motor end of the unit.
Results are given for investigations into: (1) the physical limits which set the maximum practical diameters of Si crystals that can be processed by the float-zone method in a near weightless environment, and (2) the economic impact of large, space-produced Si crystals on the electronics industry. The stability of the melt is evaluated. Heat transfer and fluid flow within the melt as dependent on the crystal size and the degree and type of rotation imparted to the melt are studied. Methods of utilizing the weightless environment for the production of large, stress-free Si crystals of uniform composition are proposed. The economic effect of large size Si crystals, their potential applications, likely utilization and cost advantages in LSI, integrated circuits, and power devices are also evaluated. Foreseeable advantages of larger diameter wafers of good characteristics and the possibilities seen for greater perfection resulting from stress-free growth are discussed.
Thermally powered device flips magnetometer between one of two positions located 180 deg apart and permits instrument calibration. Pair of heat-extensible springs selectively rotate shaft from one position to other when electric heaters bonded to them are energized.
Portable, battery-powered device permits noninvasive examination of body's interior and is particularly well suited to real-time examination of heart. Instrument is capable of C-mode, A-mode, and M-mode scan display.
Miniature ultrasonic echosonometer implanted within laboratory animals obtains energy from RF power oscillator that is electronically transduced via induction loop to power receiving loop located just under animal's skin. Method of powering device offers significant advantages over those in which battery is part of implanted package.
The technique of silicon ribbon growth by the capillary action shaping is assessed for applicability to photovoltaic power device material. Ribbons 25 mm in width and up to 0.5 m in length have been grown from SiC dies, and some new characteristics of growth from such dies have been identified. Thermal modifiers have been studied, and systems were developed which reduce the frozen-in stress un silicon ribbons and improve the thickness uniformity of the ribbons. Preliminary spreading resistance measurements indicate that neither surface striations nor twin boundaries give rise to appreciable resistivity variations, but that large-angle grain boundaries cause local resistivity increases of up to 200%.
Power transistor networks which switch large currents in highly inductive environments are beginning to find application in the hundred kilohertz switching frequency range. Recent developments in the fabrication of metal-oxide-semiconductor field-effect transistors in the power device category have enhanced the movement toward higher switching frequencies. Models for switching devices and of the circuits in which they are imbedded are required to properly characterize the mechanisms responsible for turning on and turning off effects. Easily interpreted results in the form of oscilloscope-like plots assist in understanding the effects of parametric studies using topology oriented computer-aided analysis methods.
Power distribution subsystems are required for three elements of the SPS program: (1) orbiting satellite, (2) ground rectenna, and (3) Electric Orbiting Transfer Vehicle (EOTV). Power distribution subsystems receive electrical power from the energy conversion subsystem and provide the power busses rotary power transfer devices, switchgear, power processing, energy storage, and power management required to deliver control, high voltage plasma interactions, electric thruster interactions, and spacecraft charging of the SPS and the EOTV are also included as part of the power distribution subsystem design.
The solution of matrix equations is essential to carrying out a large variety of control algorithms and to reducing certain types of data such as the output of a multispectral sensor array. Optical techniques and, in particular, integrated-optical circuits (IOC's) can provide compact, low-power devices for performing the mitrix multiplications necessary for the solution of these problems. A specific IOC for performing vector-matrix multiplication and several approaches to the design of IOC's for matrix-matrix multiplication will be discussed.
Photovoltaic arrays that convert solar energy into electrical energy can become a cost effective bulk energy generation alternative, provided that an adequate supply of low cost materials is available. One of the key requirements for economic photovoltaic cells is reasonably priced silicon. At present, the photovoltaic industry is dependent upon polycrystalline silicon refined by the Siemens process primarily for integrated circuits, power devices, and discrete semiconductor devices. This dependency is expected to continue until the DOE sponsored low cost silicon refining technology developments have matured to the point where they are in commercial use. The photovoltaic industry can then develop its own source of supply. Silicon material availability and market pricing projections through 1988 are updated based on data collected early in 1984. The silicon refining industry plans to meet the increasing demands of the semiconductor device and photovoltaic product industries are overviewed. In addition, the DOE sponsored technology research for producing low cost polycrystalline silicon, probabilistic cost analysis for the two most promising production processes for achieving the DOE cost goals, and the impacts of the DOE photovoltaics program silicon refining research upon the commercial polycrystalline silicon refining industry are addressed.
Vacuum metal-organic-chemical-vapor-deposition (MOCVD) is a new fabrication process with improved safety and easier scalability due to its metal rather than glass construction and its uniform multiport gas injection system. It uses source materials more efficiently than other methods because the vacuum molecular flow conditions allow the high sticking coefficient reactants to reach the substrates as undeflected molecular beams and the hot chamber walls cause the low sticking coefficient reactants to bounce off the walls and interact with the substrates many times. This high source utilization reduces the materials costs power device and substantially decreases the amounts of toxic materials that must be handled as process effluents. The molecular beams allow precise growth control. With improved source purifications, vacuum MOCVD has provided p GaAs layers with 10-micron minority carrier diffusion lengths and GaAs and GaAsSb solar cells with 20% AMO efficiencies at 59X and 99X sunlight concentration ratios. Mechanical stacking has been identified as the quickest, most direct and logical path to stacked multiple-junction solar cells that perform better than the best single-junction devices. The mechanical stack is configured for immediate use in solar arrays and allows interconnections that improve the system end-of-life performance in space.
Longitudinal pumping by laser diodes increases efficiency. Improved holmium:yttrium lithium fluoride laser radiates as much as 56 mW of power at wavelength of 2.1 micrometer. New Ho:YLF laser more compact and efficient than older, more powerful devices of this type. Compact, efficient Ho:YLF laser based on recent successes in use of diode lasers to pump other types of solid-state lasers.