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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Adaptive microwave reflector

As an interim step in going to the 100-meter reflector that was evaluated, a 5-meter reflector is proposed to test the electrostatic concept under space conditions. Some of the issues which require the space environment for evaluation are the following questions: Can deployment of a box ring structure with a thin film reflector attached be manually deployed? In the absence of humidity, can a 0.3-mil aluminized Kapton film reflector be formed by the electrostatic process suitable for antenna applications? Can the photogrammetric process be used to evaluate the reflector surface with pictures taken from the payload handling station? Can the space charging effect be evaluated with the 5-meter reflector attached to the Shuttle? Does the outgassing of moisture from 0.3-mil Kapton film affect its reflector capability? A box ring truss support structure and an automatic sequence deployment system are discussed.

Goslee, J. W.↗
NASA NTRS1984

Nighttime observations of thunderstorm electrical activity from a high altitude airplane

Nocturnal thunderstorms were observed from above and features of cloud structure and lightning which are not generally visible from the ground are discussed. Most, lightning activity seems to be associated with clouds with strong convective cauliflower tops. In both of the storms lightning channels were visible in the clear air above the cloud. It is shown that substances produced by thunderstorm electrical discharges can be introduced directly into the stratosphere. The cause and nature of the discharges above the cloud are not clear. They may be produced by accumulations of space charge in the clear air above the cloud. The discharges may arise solely because of the intense electric fields produced by charges within the cloud. In the latter case the ions introduced by these discharges will increase the electrical conductivity of the air above the cloud and increase the conduction current that flows from the cloud to the electrosphere. More quantitative data at higher resolution may show significant spectral differences between cloud to ground and intracloud strokes. It is shown that electric field change data taken with an electric field change meter mounted in an airplane provide data on lightning discharges from above that are quite similar to those obtained from the ground in the past. The optical signals from dart leaders, from return strokes, and from continuing currents are recognizable, can be used to provide information on the fine structure of lightning, and can be used to distinguish between cloud to ground and intracloud flashes.

Brook, M.↗
NASA NTRS1985

Discharge pulse phenomenology

A model was developed which places radiation induced discharge pulse results into a unified conceptual framework. Only two phenomena are required to interpret all space and laboratory results: (1) radiation produces large electrostatic fields inside insulators via the trapping of a net space charge density; and (2) the electrostatic fields initiate discharge streamer plasmas similar to those investigated in high voltage electrical insulation materials; these streamer plasmas generate the pulsing phenomena. The apparent variability and diversity of results seen is an inherent feature of the plasma streamer mechanism acting in the electric fields which is created by irradiation of the dielectrics. The implications of the model are extensive and lead to constraints over what can be done about spacecraft pulsing.

Frederickson, A. R.↗
NASA NTRS1985

Theory of the high base resistivity n(+)pp(+) silicon solar cell and its application to radiation damage effects

Particulate radiation in space is a principal source of silicon solar cell degradation, and an investigation of cell radiation damage at higher base resistivities appears to have implication toward increasing solar cell and, therefore, useful satellite lifetimes in the space environment. However, contrary to expectations, it has been found that for cells with resistivities of 84 and 1250 ohm cm, the radiation resistance decreases as cell base resistivity increases. An analytical solar-cell computer model was developed with the objective to determine the reasons for this unexpected behavior. The present paper has the aim to describe the analytical model and its use in interpreting the behavior, under irradiation, of high-resistivity solar cells. Attention is given to boundary conditions at the space-charge region edges, cell currents, cell voltages, the generation of the theoretical I-V characteristic, experimental results, and computer calculations.

Goradia, C.↗
NASA NTRS1984

Backside damage-gettering in cast polycrystalline silicon

The technique of backside-damage gettering improves the performance of short minority-carrier diffusion length, large-grain (grain diameter greater than 1 to 2 mm), cast polycrystalline silicon. On average, increases of nearly 20 percent in short-circuit current, 10 mV in open-circuit voltage, and 15 percent in peak-power were obtained by heat-treating 300 micron thick polycrystalline wafers at 1000 C in flowing nitrogen for 5 hours. Additional measurements of the bulk and space-charge recombination current components indicate that this improvement results from a significant increase in the minority-carrier diffusion length due to gettering of impurities from the bulk.

Culik, J.↗
NASA NTRS1984

Limiting mechanisms in large-grain polycrystalline silicon Spatial homogeneity

An experiment to investigate the spatial homogeneity of large-grain polycrystalline silicon shows a number of performance-loss mechanisms. Arrays of up to 400 small (about 0.2 sq cm in area) photodiodes were fabricated on a selection of 10 cm x 10 cm polycrystalline silicon wafers. Measurements of the illuminated current-voltage (J-V) characteristics were used to generate maps of Voc, Jsc, and FF as a function of position; and dark J-V and LBIC analysis were used to determine the cause of low performance in areas with significantly degraded J-V characteristics. In addition to the presence of inclusions, which act as resistive shunts, the performance of many of the cells is limited by quasineutral recombination current, which may vary by up to an order of magnitude across a wafer. The increase is the result of either electrically-active grain boundaries or numerous subgrain boundaries within the grain bulk. In other isolated instances, the open-circuit voltage is reduced by excess space-charge recombination current that is not correlated with either grain or subgrain boundary activity.

Culik, J.↗
NASA NTRS1986

Presence, segregation and reactivity of H, C and N dissolved in some refractory oxides

The sources of impurities, particularly carbon, in high melting oxides and silicates are discussed, along with detection and quantification methods. The impurities are important for their effects on bulk material properties through the media of, e.g., surface or grain boundary characteristics. The impurities are usually encountered by the contact of the oxide (refractory) material with volatiles such as H2O and CO2, which become incorporated in the material and form anion complexes with oxygen acting as a covalent bonded ligand. The specific processes undergone by MgO in assimilating C impurities are delineated, using data obtained with X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry and nuclear reaction profiling. Finally, maintenance of a supersaturated solid solution with C impurities by space charge control is described as a means of offset impurity effects.

Freund, F.↗
NASA NTRS1987

Revised NASA axially symmetric ring model for coupled-cavity traveling-wave tubes

A versatile large-signal, two-dimensional computer program is used by NASA to model coupled-cavity travelling-wave tubes (TWTs). In this model, the electron beam is divided into a series of disks, each of which is further divided into axially symmetric rings which can expand and contract. The trajectories of the electron rings and the radiofrequency (RF) fields are determined from the calculated axial and radial space-charge, RF, and magnetic forces as the rings pass through a sequence of cavities. By varying electrical and geometric properties of individual cavities, the model is capable of simulating severs, velocity tapers, and voltage jumps. The calculated electron ring trajectories can be used in designing magnetic focusing and multidepressed collectors. The details of using the program are presented, and results are compared with experimental data.

Wilson, Jeffrey D.↗
NASA NTRS1987

A high flux source of swift oxygen atoms

A source of swift oxygen atoms is described which has several unique features. A high current ion beam is produced by a microwave discharge, accelerated to 10 keV and the mass selected by a modified Du Pont 21-110 mass spectrometer. The O(+) beam exciting the mass spectrometer is focused into a rectangular shape with an energy spread of less than 1 eV. The next section of the machine decelerates the ion beam into a counterpropagating electron beam in order to minimize space charge effects. After deceleration, the ion beam intersects at 90 deg, a neutral oxygen atom beam, which via resonant charge exchange produces a mixture of O(+) and O. Any remaining O(+) are swept out of the beam by an electric field and differentially pumped away while the desired O beam, collimated by slits, impinges on the target. In situ monitoring of the target surface is done by X-ray photoelectron or Auger spectroscopy. Faraday cups provide flux measurements in the ion sections while the neutral flux is determined by a special torsion balance or by a quadrupole mass spectrometer specially adapted for swift atoms. While the vacuum from the source through the mass spectrometer is maintained by diffusion pumps, the rest of the machine is UHV.

Fink, M.↗
NASA NTRS1987

Theoretical approach to oxygen atom degradation of silver

Based on available Rutherford backscattering spectrometry (RBS), proton induced X-ray emission (PIXE) and ellipsometry data obtained on silver specimens subjected to atomic oxygen attack in low Earth orbit STS flight 41-G, a theory was developed to model the oxygen atom degradation of silver. The diffusion of atomic oxygen in a microscopically nonuniform medium is an essential constituent of the theory. The driving force for diffusion is the macroscopic electrochemical potential gradient developed between the specimen surface exposed to the ambient and the bulk of the silver specimen. The longitudinal electric effect developed parallel to the gradient is modified by space charge of the diffusing charged species. Lateral electric fields and concentration differences also exist due to the nonuniform nature of the medium. The lateral concentration differences are found to be more important than the lateral electric fields in modifying the diffusion rate. The model was evaluated numerically. Qualitative agreement exists between the kinetics predicted by the theory and kinetic data taken in ground-based experiments utilizing a plasma asher.

Fromhold, Albert T., Jr.↗
NASA NTRS1987

Calculations of the displacement damage and short-circuit current degradation in proton irradiated (AlGa)As-GaAs solar cells

A theoretical model for computing the displacement damage defect density and the short-circuit current (I sub sc) degradation in proton-irradiated (AlGa)As-GaAs p-n junction solar cells is presented. Assumptions were made with justification that the radiation induced displacement defects form an effective recombination center which controls the electron and hole lifetimes in the junction space charge region and in the n-GaAs active layer of the irradiated GaAs p-n junction cells. The degradation of I sub sc in the (AlGa)As layer was found to be negligible compared to the total degradation. In order to determine the I sub sc degradation, the displacement defect density, path length, range, reduced energy after penetrating a distance x, and the average number of displacements formed by one proton scattering event were first calculated. The I sub sc degradation was calculated by using the electron capture cross section in the p-diffused layer and the hole capture cross section in the n-base layer as well as the wavelength dependent absorption coefficients. Excellent agreement was found between the researchers calculated values and the measured I sub sc in the proton irradiated GaAs solar cells for proton energies of 100 KeV to 10 MeV and fluences from 10 to the 10th power p/square cm to 10 to the 12th power p/square cm.

Yeh, C. S.↗
NASA NTRS1987

An experimental investigation of the plasma contacting process

Measurements including plasma potential profile measurements made on a simple hollow cathode plasma contactor operating in the electron collection and emission modes are described. The ignited electron collection mode of contactor operation is identified, shown to improve contactor performance and found to be facilitated by increasing the size of the contactor anode. Potential profile data are compared to the predictions of a simple theoretical model that describes space-charge-current limitations imposed by the formation of a double sheath and found to agree with each other to within about + or - 25 percent. Because electrons, which are the dominant charge carriers, tend to be emitted from the hollow cathode in the emission mode and collected by the anode in the collection mode it is suggested that operation at high electrodynamic tether currents will probably require switching the point of tether connection to the contactor between its cathode and anode when the direction of tether current is reversed.

Wilbur, Paul J.↗
NASA NTRS1986

Spatial resolution and nature of defects produced by low-energy proton irradiation of GaAs solar cells

AlGaAs/GaAs solar cells with about 0.5-micron-thick Al(0.85)Ga(0.15)As window layers were irradiated using isotropic and normal incidence protons having energies between 50 and 500 keV with fluences up to 1 x 10 to the 12th protons/sq cm. Although the projected range for these protons varies from 0 to more than 4.5 microns, the recombination losses due to the irradiation-induced defects were observed to be maximum in the vicinity of the AlGaAs/GaAs interface and the space-charge region irrespective of the proton energy. This was found by analyzing spectral response measurements. The results are explained by using a model in which the interaction of as-grown dislocations with irradiation-induced point defects is considered.

Kachare, R.↗
NASA NTRS1986

Forward-bias tunneling - A limitation to bipolar device scaling

Forward-bias tunneling is observed in heavily doped p-n junctions of bipolar transistors. A simple phenomenological model suitable to incorporation in device codes is developed. The model identifies as key parameters the space-charge-region (SCR) thickness at zero bias and the reduced doping level at its edges which can both be obtained from CV characteristics. This tunneling mechanism may limit the maximum gain achievable from scaled bipolar devices.

Del Alamo, Jesus A.↗
NASA NTRS1987

Enhanced beam coupling modulation using the polarization properties of photorefractive GaAs

Observation is reported of a rotation in the polarization of the two photorefractive recording beams in GaAs for a configuration with the internally generated space-charge field along the line 110 crystallographic orientation. This rotation is a result of simultaneous constructive and destructive beam coupling in each beam for the optical electric field components along the two electrooptically induced principal dielectric axes of the crystal. By turning one of the beams on and off, the intensity of the other beam after the crystal and a polarization analyzer can be modulated by as much as 500 percent. This result is of particular importance for optical information processing applications.

Partovi, Afshin↗
NASA NTRS1988

Conversion Losses In GaAs Schottky-Barrier Diodes

Parasitic losses reduced with lightly doped epitaxial layers of proper thickness. Report presents calculations of conversion losses in Schottky-barrier diodes. Theoretical work directed toward reduction of parasitic losses through proper design of space-charge layers; possible, to reduce barrier capacitances and contributions to barrier resistances from undepleted epitaxial layers.

Von Roos, Oldwig↗
NASA NTRS1986

Hollow cathode plasma coupling study, 1986

The electron collection and emission characteristics of a simple hollow cathode contactor, an extended anode hollow cathode contactor supplied by JSC, and a ring cusp magnetic field contactor are presented and the effects of discharge power and argon or xenon expellant flowrate on these characteristics are examined. All of the contactors are shown to exhibit good electron emission performance over a wide range of discharge power and expellant type and flowrate. Good electron performance is shown to be more difficult to achieve. Results suggest that the extended anode and ring cusp contactors should perform satisfactorily to electron emission currents beyond 1000 mA and electron collection currents beyond 500 mA. All contactors performed better on xenon than argon. A general theory of plasma contactor operation in both the electron collection and electron emission modes, which describes the current-limiting effects of space-charge phenomena is given. This current-limiting and collecting phenomenon is shown to be a function of driving potential differences and emitting and collecting surface radius ratio for the case of a spherical geometry. Discharge power did not appear to influence the electron collection current substantially in the experiments so it is suggested in light of the model that the contactors are generally not limited by their ion production capabilities under conditions at which they were tested.

Wilbur, Paul J.↗
NASA NTRS1987

Advanced electric propulsion and space plasma contactor research

A theory of the plasma contacting process is described and experimental results obtained using three different hollow cathode-based plasma contactors are presented. The existence of a sheath across which the bulk of the voltage drop associated with the contacting process occurs is demonstrated. Test results are shown to agree with a model of a spherical, space-charge-limited double sheath. The concept of ignited mode contactor operation is discussed, which is shown to enhance contactor efficiency when it is collecting electrons. An investigation of the potentials in the plasma plumes downstream of contactors operating at typical conditions is presented. Results of tests performed on hollow cathodes operating at high interelectrode pressures (up to about 1000 Torr) on ammonia are presented and criteria that are necessary to ensure that the cathode will operate properly in this regime are presented. These results suggest that high pressure hollow cathode operation is difficult to achieve and that special care must be taken to assure that the electron emission region remains diffuse and attached to the low work function insert. Experiments conducted to verify results obtained previously using a ring cusp ion source equipped with a moveable anode are described and test results are reported. A theoretical study of hollow cathode operation at high electron emission currents is presented. Preliminary experiments using the constrained sheath optics concept to achieve ion extraction under conditions of high beam current density, low net accelerating voltage and well columniated beamlet formation are discussed.

Wilbur, Paul J.↗