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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Pinhole array capacitor for oxide integrity analysis

The integrity of the metal-poly oxide and the gate oxide was evaluated for several 5-micron CMOS-bulk processes. The pinhole array capacitor consists of diffused and poly fingers that form a network of MOS transistors (elements), which are capped by a deposited oxide and metal layer. The smallest structure used in this study contained about 15,000 elements and the largest structure contained about 68,000 elements. Each structure was divided into several subarrays. The structures are placed a number of times on each wafer. From a yield analysis of the subarrays, the elements per defect were found to be typically in excess of 50,000 elements/defect for the metal-poly oxide and 100,000 elements/defect for the gate oxide. From the switching behavior of the transistors, the gate oxide defects were tentatively identified as gate-to-body shorts rather than gate-to-diffusion shorts.

Buehler, M. G.↗
NASA NTRS1985

Pinhole array capacitor for oxide integrity analysis

The integrity of the metal-poly oxide and the gate oxide was evaluated for several 5-micron CMOS-bulk process. The pinhole array capacitor consists of diffused and poly fingers that form a network of MOS transistors (elements), which are capped by a deposited oxide and metal layer. The smallest structure used contained about 15,000 elements and the largest structure contained about 68,000 elements. Each structure was divided into several subarrays. The structures are placed a number of times on each wafer. From a yield analysis of the subarrays, the elements per defect were found to be typically in excess of 50,000 elements/defect for the metal-poly oxide and 100,000 elements/defect for the gate oxide. From the switching behavior of the transistors, the gate oxide defects were tentatively identified as gate-to-body shorts rather than gate-to-diffusion shorts.

Buehler, M. G.↗
NASA NTRS1988

An adaptive array antenna for mobile satellite communications

The adaptive array is linearly polarized and consists essentially of a driven lambda/4 monopole surrounded by an array of parasitic elements all mounted on a ground plane of finite size. The parasitic elements are all connected to ground via pin diodes. By applying suitable bias voltages, the desired parasitic elements can be activated and made highly reflective. The directivity and pointing of the antenna beam can be controlled in both the azimuth and elevation planes using high speed digital switching techniques. The antenna RF losses are neglible and the maximum gain is close to the theoretical value determined by the effective aperture size. The antenna is compact, has a low profile, is inexpensive to manufacture and can handle high transmitter power.

Milne, Robert↗
NASA NTRS1990

In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectric having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writting capability, complex device structures like three-terminal hybrid semiconductors/superconductors transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray defraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

Singh, R.↗
NASA NTRS1991

In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectrics having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writing capability, complex device structures like three terminal hybrid semiconductor/superconductor transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray deffraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

Singh, R.↗
NASA NTRS1990

Memory switches based on metal oxide thin films

MnO.sub.2-x thin films (12) exhibit irreversible memory switching (28) with an OFF/ON resistance ratio of at least about 10.sup.3 and the tailorability of ON state (20) resistance. Such films are potentially extremely useful as a connection element in a variety of microelectronic circuits and arrays (24). Such films provide a pre-tailored, finite, non-volatile resistive element at a desired place in an electric circuit, which can be electrically turned OFF (22) or disconnected as desired, by application of an electrical pulse. Microswitch structures (10) constitute the thin film element, contacted by a pair of separate electrodes (16a, 16b) and have a finite, pre-selected ON resistance which is ideally suited, for example, as a programmable binary synaptic connection for electronic implementation of neural network architectures. The MnO.sub.2-x microswitch is non-volatile, patternable, insensitive to ultraviolet light, and adherent to a variety of insulating substrates (14), such as glass and silicon dioxide-coated silicon substrates.

Ramesham, Rajeshuni↗
NASA NTRS2007

Steerable Space Fed Lens Array for Low-Cost Adaptive Ground Station Applications

The Space Fed Lens Array (SFLA) is an alternative to a phased array antenna that replaces large numbers of expensive solid-state phase shifters with a single spatial feed network. SFLA can be used for multi-beam application where multiple independent beams can be generated simultaneously with a single antenna aperture. Unlike phased array antennas where feed loss increases with array size, feed loss in a lens array with more than 50 elements is nearly independent of the number of elements, a desirable feature for large apertures. In addition, SFLA has lower cost as compared to a phased array at the expense of total volume and complete beam continuity. For ground station applications, both of these tradeoff parameters are not important and can thus be exploited in order to lower the cost of the ground station. In this paper, we report the development and demonstration of a 952-element beam-steerable SFLA intended for use as a low cost ground station for communicating and tracking of a low Earth orbiting satellite. The dynamic beam steering is achieved through switching to different feed-positions of the SFLA via a beam controller.

Lee, Richard Q.↗
NASA NTRS2011

NASA Tech Briefs, April 2011

Topics covered include: Amperometric Solid Electrolyte Oxygen Microsensors with Easy Batch Fabrication; Two-Axis Direct Fluid Shear Stress Sensor for Aerodynamic Applications; Target Assembly to Check Boresight Alignment of Active Sensors; Virtual Sensor Test Instrumentation; Evaluation of the Reflection Coefficient of Microstrip Elements for Reflectarray Antennas; Miniaturized Ka-Band Dual-Channel Radar; Continuous-Integration Laser Energy Lidar Monitor; Miniaturized Airborne Imaging Central Server System; Radiation-Tolerant, SpaceWire-Compatible Switching Fabric; Small Microprocessor for ASIC or FPGA Implementation; Source-Coupled, N-Channel, JFET-Based Digital Logic Gate Structure Using Resistive Level Shifters; High-Voltage-Input Level Translator Using Standard CMOS; Monitoring Digital Closed-Loop Feedback Systems; MASCOT - MATLAB Stability and Control Toolbox; MIRO Continuum Calibration for Asteroid Mode; GOATS Image Projection Component; Coded Modulation in C and MATLAB; Low-Dead-Volume Inlet for Vacuum Chamber; Thermal Control Method for High-Current Wire Bundles by Injecting a Thermally Conductive Filler; Method for Selective Cleaning of Mold Release from Composite Honeycomb Surfaces; Infrared-Bolometer Arrays with Reflective Backshorts; Commercialization of LARC (trade mark) -SI Polyimide Technology; Novel Low-Density Ablators Containing Hyperbranched Poly(azomethine)s; Carbon Nanotubes on Titanium Substrates for Stray Light Suppression; Monolithic, High-Speed Fiber-Optic Switching Array for Lidar; Grid-Tied Photovoltaic Power System; Spectroelectrochemical Instrument Measures TOC; A Miniaturized Video System for Monitoring Drosophila Behavior; Hydrofocusing Bioreactor Produces Anti-Cancer Alkaloids; Creep Measurement Video Extensometer; Radius of Curvature Measurement of Large Optics Using Interferometry and Laser Tracker n-B-pi-p Superlattice Infrared Detector; Safe Onboard Guidance and Control Under Probabilistic Uncertainty; General Tool for Evaluating High-Contrast Coronagraphic Telescope Performance Error Budgets; Hidden Statistics of Schroedinger Equation; Optimal Padding for the Two-Dimensional Fast Fourier Transform; Spatial Query for Planetary Data; Higher Order Mode Coupling in Feed Waveguide of a Planar Slot Array Antenna; Evolutionary Computational Methods for Identifying Emergent Behavior in Autonomous Systems; Sampling Theorem in Terms of the Bandwidth and Sampling Interval; Meteoroid/Orbital Debris Shield Engineering Development Practice and Procedure; Self-Balancing, Optical-Center-Pivot, Fast-Steering Mirror; Wireless Orbiter Hang-Angle Inclinometer System; and Internal Electrostatic Discharge Monitor - IESDM.

Source record↗
NASA NTRS1992

High speed magneto-resistive random access memory

A high speed read MRAM memory element is configured from a sandwich of magnetizable, ferromagnetic film surrounding a magneto-resistive film which may be ferromagnetic or not. One outer ferromagnetic film has a higher coercive force than the other and therefore remains magnetized in one sense while the other may be switched in sense by a switching magnetic field. The magneto-resistive film is therefore sensitive to the amplitude of the resultant field between the outer ferromagnetic films and may be constructed of a high resistivity, high magneto-resistive material capable of higher sensing currents. This permits higher read voltages and therefore faster read operations. Alternate embodiments with perpendicular anisotropy, and in-plane anisotropy are shown, including an embodiment which uses high permeability guides to direct the closing flux path through the magneto-resistive material. High density, high speed, radiation hard, memory matrices may be constructed from these memory elements.

Wu, Jiin-Chuan↗
DOE OSTI2026

Propulsion System Design using a Dual 3-Phase PM Synchronous Reluctance Machine with X-Type Multi-Level GaN Inverter

— A propulsion system design is exhibited here that comprises of an X-type GaN power module based dual multi-level inverter and a PM Synchronous Reluctance motor. With the critical benefits of multi-level operation, namely low common mode EMI noise, low switching loss, low current Total Harmonic Distortion (THD), smoother torque and lower iron loss, this topology targets high system-level efficiency and high power density while using reduced rare earth (RE) elements in its motor. General Motors and Purdue University jointly designed and developed this 800V class, highly scalable traction drive that can deliver 200+ kW of power suitable for C-SUV to truck vehicle class. The 3-phase electric machine design utilizes dual winding with 6 terminals to work in line with the GaN X-type inverter, and results in a tractive solution that ensures higher machine efficiency while reducing cost and uncertainty related to use and availability of heavy rare earth/rare earth elements in its rotor.

MOMEN, FAIZUL [General Motors LLC, Detroit, MI (Un↗
NASA NTRS2011

Carbon-Based Nano-Electro-Mechanical-Systems

We provide an overview of our work where carbon-based nanostructures have been applied to two-dimensional (2D) planar and three-dimensional (3D) vertically-oriented nano-electro-mechanical (NEM) switches. In the first configuration, laterally oriented single-walled nanotubes (SWNTs) synthesized using thermal chemical vapor deposition (CVD) were implemented for forming bridge-type 2D NEMS switches, where switching voltages were on the order of a few volts. In the second configuration, vertically oriented carbon nanofibers (CNFs) synthesized using plasma-enhanced (PE) CVD have been explored for their potential application in 3D NEMS. We have performed nanomechanical measurements on such vertically oriented tubes using nanoindentation to determine the mechanical properties of the CNFs. Electrostatic switching was demonstrated in the CNFs synthesized on refractory metallic nitride substrates, where a nanoprobe was used as the actuating electrode inside a scanning-electron-microscope. The switching voltages were determined to be in the tens of volts range and van der Waals interactions at these length scales appeared significant, suggesting such structures are promising for nonvolatile memory applications. A finite element model was also developed to determine a theoretical pull-in voltage which was compared to experimental results.

Complementary-Metal-Oxide-Semiconductor (CMOS)↗
DOE OSTI2025

From prediction to experimental realization of ferroelectric wurtzite Al1− x Gd x N alloys

AlN-based alloys find widespread application in high-power microelectronics, optoelectronics, and electromechanics. The realization of ferroelectricity in wurtzite AlN-based heterostructural alloys has opened up the possibility of directly integrating ferroelectrics with conventional microelectronics based on tetrahedral semiconductors, such as Si, SiC, and III–Vs, enabling compute-in-memory architectures, high-density data storage, and more. The discovery of AlN-based wurtzite ferroelectrics has been driven to date by chemical intuition and empirical explorations. Here, we demonstrate the computationally-guided discovery and experimental demonstration of new ferroelectric wurtzite Al1−xGdxN alloys. First-principles calculations indicate that the minimum energy pathway for switching changes from a collective to an individual switching process with a lower overall energy barrier, at a rare-earth fraction x with x > 0.10–0.15. Experimentally, ferroelectric switching is observed at room temperature in Al1−xGdxN films with x > 0.12, which strongly supports the switching mechanisms in wurtzite ferroelectrics proposed previously [Lee et al., Sci. Adv. 10, eadl0848 (2024)]. This is also the first demonstration of ferroelectricity in an AlN-based alloy with a magnetic rare-earth element, which could pave the way for additional functionalities such as multiferroicity and opto-ferroelectricity in this exciting class of AlN-based materials.

36 MATERIALS SCIENCE↗
NASA NTRS1992

Dynamic analysis of flexible gear trains/transmissions - An automated approach

In this paper an automated algorithmic method is presented for the dynamic analysis of geared trains/transmissions. These are treated as a system of interconnected flexible bodies. The procedure developed explains the switching of constraints with time as a result of the change in the contacting areas at the gear teeth. The elastic behavior of the system is studied through the employment of three-dimensional isoparametric elements having six degrees-of-freedom at each node. The contact between the bodies is assumed at the various nodes, which could be either a line or a plane. The kinematical expressions, together with the equations of motion using Kane's method, strain energy concepts, are presented in a matrix form suitable for computer implementation. The constraint Jacobian matrices are generated automatically based on the contact information between the bodies. The concepts of the relative velocity at the contacting points at the tooth pairs and the subsequent use of the transmission ratios in the analysis is presented.

Amirouche, F. M. L.↗
NASA NTRS2008

Disabling CNT Electronic Devices by Use of Electron Beams

Bombardment with tightly focused electron beams has been suggested as a means of electrically disabling selected individual carbon-nanotubes (CNTs) in electronic devices. Evidence in support of the suggestion was obtained in an experiment in which a CNT field-effect transistor was disabled (see figure) by focusing a 1-keV electron beam on a CNT that served as the active channel of a field-effect transistor (FET). Such bombardment could be useful in the manufacture of nonvolatile-memory circuits containing CNT FETs. Ultimately, in order to obtain the best electronic performances in CNT FETs and other electronic devices, it will be necessary to fabricate the devices such that each one contains only a single CNT as an active element. At present, this is difficult because there is no way to grow a single CNT at a specific location and with a specific orientation. Instead, the common practice is to build CNTs into electronic devices by relying on spatial distribution to bridge contacts. This practice results in some devices containing no CNTs and some devices containing more than one CNT. Thus, CNT FETs have statistically distributed electronic characteristics (including switching voltages, gains, and mixtures of metallic and semiconducting CNTs). According to the suggestion, by using a 1-keV electron beam (e.g., a beam from a scanning electron microscope), a particular nanotube could be rendered electrically dysfunctional. This procedure could be repeated as many times as necessary on different CNTs in a device until all of the excess CNTs in the device had been disabled, leaving only one CNT as an active element (e.g., as FET channel). The physical mechanism through which a CNT becomes electrically disabled is not yet understood. On one hand, data in the literature show that electron kinetic energy >86 keV is needed to cause displacement damage in a CNT. On the other hand, inasmuch as a 1-keV beam focused on a small spot (typically a few tens of nanometers wide) deposits a significant amount of energy in a small volume, the energy density may suffice to thermally induce structural and/or electronic changes that disable the CNT. Research may be warranted to investigate this effect in detail.

Petkov, Mihail↗
DOE OSTI2024

Nitrogen: A promising doping strategy for high-performance ovonic threshold switching selectors

The Ovonic Threshold Switching (OTS) selector serves as an essential component in the development of three-dimensional high-density memory integration technology. Nevertheless, the state-of-the-art high-performance OTS materials usually contain toxic elements such as arsenic (As), posing significant risks to both environmental and human health. Nitrogen (N), which belongs to the same group as arsenic (As), has emerged as a highly promising alternative for As doping. However, the underlying mechanisms that govern N-based OTS materials have not yet been extensively investigated. In this study, we delve into the effects of N doping on the structural, bonding, and electronic properties of amorphous GeSe (a-GeNSe) by ab initio molecular dynamics simulations to bridge the knowledge gap. Our findings indicate that upon N doping in a-GeSe, the formation of robust Ge-N bonds, along with N-centered tetrahedral and triangular structures, resulting in the sluggish atomic movement that enhances the thermal stability and endurance of a-GeNSe. The OTS characteristics are significantly influenced by the material’s electronic band structure, and thus the relatively slow performance drift can be attributed to the stabilization of mid-gap states, a result of N doping which effectively slows down the aging process of chalcogenide glass. Moreover, the increased mobility gap in a-GeNSe raises the threshold voltage (V th ), making it more compatible with commercially available phase-change memory materials. Furthermore, our findings reveal the extensive impact of the N element on a typical OTS material and offer valuable perspectives for alternative doping strategies that could potentially supplant As practices.

36 MATERIALS SCIENCE↗
NASA NTRS1980

The application of mobile satellite services to emergency response communications

The application of an integrated satellite/terrestrial emergency response communications system in disaster relief operations is discussed. Large area coverage communications capability, full-time availability, a high degree of mobility, plus reliability, are pointed out as criteria for an effective emergency communications system. Response time is seen as a major factor determining the possible survival and/or protection of property. These criteria, can not be met by existing communications systems and complete blackouts were experienced during the past decades caused by either interruption or destruction of existing power lines, and overload or inadequacy of remaining lines. Several emergency cases, caused by either hurricanes, tornados, or floods, during which communication via satellite was instrumental to inform rescue and relief teams, are described in detail. Seismic Risk Maps and charts of Major Tectonic Plates Earthquake Epicenters are given, and it is noted that, 35 percent of the U.S. population is living in critical areas. National and international agreements for the implementation of a satellite-aided global Search and Rescue Program is mentioned. Technological and economic breakthroughs are still needed in large multibeam antennas, switching circuits, and low cost mobile ground terminals. A pending plan of NASA to initiate a multiservice program in 1982/83, with a Land Mobile Satellite capability operating in the 806 - 890 MHz band as a major element, may help to accelerate the needed breakthroughs.

Freibaum, J.↗