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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

SiC Multi-Chip Power Modules as Power-System Building Blocks

The term "SiC MCPMs" (wherein "MCPM" signifies "multi-chip power module") denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking. Moreover, the higher-temperature capabilities of SiC MCPMs could enable operation in environments hotter than Si-based power systems can withstand. The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules. In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications: typical functions could include regulating voltages, storing energy, and driving motors. Because identical SiC MCPM building blocks could be utilized in a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. Several prototype DC-to-DC power-converter modules containing SiC power-switching devices were designed and built to demonstrate the feasibility of the SiC MCPM concept. In anticipation of a future need for operation at high temperature, the circuitry in the modules includes high-temperature inductors and capacitors. These modules were designed to be stacked to construct a system of four modules electrically connected in series and/or parallel. The packaging of the modules is designed to satisfy requirements for series and parallel interconnection among modules, high power density, high thermal efficiency, small size, and light weight. Each module includes four output power connectors two for serial and two for parallel output power connections among the modules. Each module also includes two signal connectors, electrically isolated from the power connectors, that afford four zones for signal interconnections among the SOI controllers. Finally, each module includes two input power connectors, through which it receives power from an in-line power bus. This design feature is included in anticipation of a custom-designed power bus incorporating sockets compatible with snap-on type connectors to enable rapid replacement of failed modules.

Lostetter, Alexander↗
NASA NTRS2001

Multiresolution Wavelet Based Adaptive Numerical Dissipation Control for Shock-Turbulence Computations

The recently developed essentially fourth-order or higher low dissipative shock-capturing scheme of Yee, Sandham and Djomehri (1999) aimed at minimizing nu- merical dissipations for high speed compressible viscous flows containing shocks, shears and turbulence. To detect non smooth behavior and control the amount of numerical dissipation to be added, Yee et al. employed an artificial compression method (ACM) of Harten (1978) but utilize it in an entirely different context than Harten originally intended. The ACM sensor consists of two tuning parameters and is highly physical problem dependent. To minimize the tuning of parameters and physical problem dependence, new sensors with improved detection properties are proposed. The new sensors are derived from utilizing appropriate non-orthogonal wavelet basis functions and they can be used to completely switch to the extra numerical dissipation outside shock layers. The non-dissipative spatial base scheme of arbitrarily high order of accuracy can be maintained without compromising its stability at all parts of the domain where the solution is smooth. Two types of redundant non-orthogonal wavelet basis functions are considered. One is the B-spline wavelet (Mallat & Zhong 1992) used by Gerritsen and Olsson (1996) in an adaptive mesh refinement method, to determine regions where re nement should be done. The other is the modification of the multiresolution method of Harten (1995) by converting it to a new, redundant, non-orthogonal wavelet. The wavelet sensor is then obtained by computing the estimated Lipschitz exponent of a chosen physical quantity (or vector) to be sensed on a chosen wavelet basis function. Both wavelet sensors can be viewed as dual purpose adaptive methods leading to dynamic numerical dissipation control and improved grid adaptation indicators. Consequently, they are useful not only for shock-turbulence computations but also for computational aeroacoustics and numerical combustion. In addition, these sensors are scheme independent and can be stand alone options for numerical algorithm other than the Yee et al. scheme.

Sjoegreen, B.↗
NASA NTRS2019

Multi-Band and Multi-Function Reconfigurable Gallium Nitride Based Fully Solid-State Microwave Power Module for Cognitive Radio/Radar Platforms

This paper presents as a proof-of-concept (POC) the design, integration, and performance of a novel reconfigurable S-/X-band Gallium Nitride (GaN) based fully solid-state microwave power module (SSMPM) for the role as the transmit module in a cognitive radio (CR). The SSMPM synergistically integrates multiple amplifiers through diplexing and high power switches to enable a single SSMPM capable of functioning as both S-/X-band amplifiers for telemetry, tracking, and command (TT&C), telecommunications, and science data downlink or as X-band radar for proximity sensing onboard a planetary exploration spacecraft. Integration of an electric field shaping field plate (FP) onto the GaN high electron mobility transistors (HEMTs) in this SSMPM provides increased performance and reliability for operation in the harsh conditions of space. This SSMPM is capable of delivering saturated power (Psat) of 39 dBm (8 W continuous wave (CW)) at S-band, P(sub sat) of 43 dBm (20 W CW) at X-band, and P(sub sat) of >50 dBm (>100 W Pulsed) at X-band.

Simons, Rainee N.↗
NASA NTRS1974

Binary-selectable detector holdoff circuit

High-speed switching circuit protects detectors from sudden, extremely-intense backscattered radiation that results from short-range atmospheric dust layers, or low-level clouds, entering laser/radar field of view. Function of circuit is to provide computer-controlled switching of photodiode detector, preamplifier power-supply voltages, in approximately 10 nanoseconds.

Kadrmas, K. A.↗
NASA NTRS2008

Update on Development of SiC Multi-Chip Power Modules

Progress has been made in a continuing effort to develop multi-chip power modules (SiC MCPMs). This effort at an earlier stage was reported in 'SiC Multi-Chip Power Modules as Power-System Building Blocks' (LEW-18008-1), NASA Tech Briefs, Vol. 31, No. 2 (February 2007), page 28. The following recapitulation of information from the cited prior article is prerequisite to a meaningful summary of the progress made since then: 1) SiC MCPMs are, more specifically, electronic power-supply modules containing multiple silicon carbide power integrated-circuit chips and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking; 2) The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules; and, 3) In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications. Because identical SiC MCPM building blocks could be utilized in such a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. This concludes the information from the cited prior article. The main activity since the previously reported stage of development was the design, fabrication, and testing a 120- VDC-to-28-VDC modular power-converter system composed of eight SiC MCPMs in a 4 (parallel)-by-2 (series) matrix configuration, with normally-off controllable power switches. The SiC MCPM power modules include closed-loop control subsystems and are capable of operating at high power density or high temperature. The system was tested under various configurations, load conditions, load-transient conditions, and failure-recovery conditions. Planned future work includes refinement of the demonstrated modular system concept and development of a new converter hardware topology that would enable sharing of currents without the need for communication among modules. Toward these ends, it is also planned to develop a new converter control algorithm that would provide for improved sharing of current and power under all conditions, and to implement advanced packaging concepts that would enable operation at higher power density.

Lostetter, Alexander↗
DOE OSTI2022

n-Type doping of a solution processed p-type semiconductor using isoelectronic surface dopants for homojunction fabrication

The p-n junction is one of the fundamental requirements for a practical semiconductor-based electronic device. Designing a heterojunction comprising of dissimilar p-type and n-type semiconductors calls for careful energy level considerations, both when selecting the semiconductor materials as well as the metal contacts. A homojunction based on a single semiconductor simplifies this task, as energy levels of the p-type and n-type materials are already fairly similar, allowing for easier selection of contacts. Traditionally, homojunctions rely on doping of a bulk semiconductor to achieve p- and n-type transport through controlled addition of aliovalent dopants via energy-intensive processes such as ion implantation or thermal annealing. Exact control of doping in nanocrystalline semiconductors is significantly more challenging, due to self-purification effects. However, owing to their large surface areas, surface moieties can be utilized to both dope the nanostructures as well as tune their energy levels. Here, we present a facile technique based on an isoelectronic surface dopant in order to achieve p- and n-type materials based on the same semiconductor. We show that thin p-type colloidal Bi 2 Te 3 nanowires can be switched to n-type through surface functionalization, thus increasing the availability of new nanocrystalline solution-processable p-n homojunctions.

42 ENGINEERING↗
DOE OSTI2022

Reciprocal swimming at intermediate Reynolds number

In Stokes flow, Purcell's scallop theorem forbids objects with time-reversible (reciprocal) swimming strokes from moving. In the presence of inertia, this restriction is eased and reciprocally deforming bodies can swim. A number of recent works have investigated dimer models that swim reciprocally at intermediate Reynolds numbers Re≈1–1000. These show interesting results (e.g. switches of the swim direction as a function of inertia) but the results vary and seem to be case specific. Here, in this work, we introduce a general model and investigate the behaviour of an asymmetric spherical dimer of oscillating length for small-amplitude motion at intermediate Re. In our analysis we make the important distinction between particle and fluid inertia, both of which need to be considered separately. We asymptotically expand the Navier–Stokes equations in the small-amplitude limit to obtain a system of linear partial differential equations. Using a combination of numerical (finite element) and analytical (reciprocal theorem, method of reflections) methods we solve the system to obtain the dimer's swim speed and show that there are two mechanisms that give rise to motion: boundary conditions (an effective slip velocity) and Reynolds stresses. Each mechanism is driven by two classes of sphere–sphere interactions, between one sphere's motion and (1) the oscillating background flow induced by the other's motion, and (2) a geometric asymmetry induced by the other's presence. We can thus unify and explain behaviours observed in other works. Our results show how sensitive, counterintuitive and rich motility is in the parameter space of finite inertia of particles and fluid.

42 ENGINEERING↗
DOE OSTI2020

Electric field stimulates production of highly conductive microbial OmcZ nanowires

Multifunctional living materials are attractive due to their powerful ability to self-repair and replicate. However, most natural materials lack electronic functionality. Here we show that an electric field, applied to electricity-producing Geobacter sulfurreducens biofilms, stimulates production of cytochrome OmcZ nanowires with 1,000-fold higher conductivity (30 S cm -1 ) and threefold higher stiffness (1.5 GPa) than the cytochrome OmcS nanowires that are important in natural environments. Using chemical imaging-based multimodal nanospectroscopy, we correlate protein structure with function and observe pH-induced conformational switching to β-sheets in individual nanowires, which increases their stiffness and conductivity by 100-fold due to enhanced π-stacking of heme groups; this was further confirmed by computational modeling and bulk spectroscopic studies. These nanowires can transduce mechanical and chemical stimuli into electrical signals to perform sensing, synthesis and energy production. Overall, these findings of biologically produced, highly conductive protein nanowires may help to guide the development of seamless, bidirectional interfaces between biological and electronic systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Double integrated laser-thyristor

Comparative experiments are performed on a semiconductor laser with different numbers (one or two) of emitting sections monolithically integrated with an electronic switch (thyristor). It is shown that the functional integration of a laser with a thyristor in one heterostructure makes it possible to achieve efficient operation of the laser in a pulsed regime (up to 50 W), while the use of vertical integration of two laser sections in this device additionally increases the optical output power to 90 W with all other conditions being the same. (lasers)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Shade triggers posttranscriptional PHYTOCHROME-INTERACTING FACTOR-dependent increases in H3K4 trimethylation

The phytochrome (phy)-PHYTOCHROME-INTERACTING FACTOR (PIF) sensory module perceives and transduces light signals to direct target genes (DTGs), which then drive the adaptational responses in plant growth and development appropriate to the prevailing environment. These signals include the first exposure of etiolated seedlings to sunlight upon emergence from subterranean darkness and the change in color of the light that is filtered through, or reflected from, neighboring vegetation (“shade”). Previously, we identified three broad categories of rapidly signal-responsive genes: those repressed by light and conversely induced by shade; those repressed by light, but subsequently unresponsive to shade; and those responsive to shade only. Here, we investigate the potential role of epigenetic chromatin modifications in regulating these contrasting patterns of phy-PIF module-induced expression of DTGs in Arabidopsis (Arabidopsis thaliana). Using RNA-seq and ChIP-seq to determine time-resolved profiling of transcript and histone 3 lysine 4 trimethylation (H3K4me3) levels, respectively, we show that, whereas the initial dark-to-light transition triggers a rapid, apparently temporally coincident decline of both parameters, the light-to-shade transition induces similarly rapid increases in transcript levels that precede increases in H3K4me3 levels. Together with other recent findings, these data raise the possibility that, rather than being causal in the shade-induced expression changes, H3K4me3 may function to buffer the rapidly fluctuating shade/light switching that is intrinsic to vegetational canopies under natural sunlight conditions.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2018

Local control of defects and switching properties in ferroelectric thin films

Electric-field switching of polarization is the building block of a wide variety of ferroelectric devices. In turn, understanding the factors affecting ferroelectric switching and developing routes to control it are of great technological significance. This research provides systematic experimental evidence of the role of defects in affecting ferroelectric-polarization switching and utilizes the ability to deterministically create and spatially locate point defects in $PbZr_{0.2}Ti_{0.8}O_3$ thin films via focused-helium-ion bombardment and the subsequent defect-polarization coupling as a knob for on-demand control of ferroelectric switching (e.g., coercivity and imprint). At intermediate ion doses ($0.22-2.2×10^{14}\,ions\,cm^{-2}$), the dominant defects (isolated point defects and small clusters) show a weak interaction with domain walls (pinning potentials from $200-500\,K\,MV\,cm^{-1}$), resulting in small and symmetric changes in the coercive field. At high doses ($0.22-1×10^{15}\,ions\,cm^{-2}$), on the other hand, the dominant defects (larger defect complexes and clusters) strongly pin domain-wall motion (pinning potentials from 500 to $1600\,K\,MV\,cm^{-1}$), resulting in a large increase in the coercivity and imprint, and a reduction in the polarization. This local control of ferroelectric switching provides a route to produce novel functions; namely, tunable multiple polarization states, rewritable pre-determined 180° domain patterns, and multiple zero-field piezoresponse and permittivity states. Such an approach opens up pathways to achieve multilevel data storage and logic, nonvolatile self-sensing shape-memory devices, and nonvolatile ferroelectric field-effect transistors.

36 MATERIALS SCIENCE↗
NASA NTRS1973

Automated attendance accounting system

An automated accounting system useful for applying data to a computer from any or all of a multiplicity of data terminals is disclosed. The system essentially includes a preselected number of data terminals which are each adapted to convert data words of decimal form to another form, i.e., binary, usable with the computer. Each data terminal may take the form of a keyboard unit having a number of depressable buttons or switches corresponding to selected data digits and/or function digits. A bank of data buffers, one of which is associated with each data terminal, is provided as a temporary storage. Data from the terminals is applied to the data buffers on a digit by digit basis for transfer via a multiplexer to the computer.

Chapman, C. P.↗
NASA NTRS1985

High-voltage, high-power, solid-state remote power controllers for aerospace applications

Two general types of remote power controller (RPC) that combine the functions of a circuit breaker and a switch were developed for use in direct-current (dc) aerospace systems. Power-switching devices used in these designs are the relatively new gate-turnoff thyristor (GTO) and poweer metal-oxide-semiconductor field-effect transistors (MOSFET). The various RPC's can switch dc voltages to 1200 V and currents to 100 A. Seven different units were constructed and subjected to comprehensive laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times to limit voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout and microsecond tripout for large overloads. The basic circuits developed can be used to build switchgear limited only by the ratings of the switching device used.

Sturman, J. C.↗
NASA NTRS1985

Design of high-voltage, high-power, solid state remote power controllers for aerospace applications

Two general types of remote power controllers (RPC's), which combine the functions of a circuit breaker and a switch, were developed for use in dc aerospace systems. Power-switching devices used in the designs are the gate-turnoff thyristor (GTO) and MOSFET. The RPC's can switch dc voltages to 1200 V and currents to 1000 A. Seven different units were constructed and subjected to laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times which limit surge currents and voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout proportional to I sq T and microsecond tripout for large overloads.

Sturman, J. C.↗
NASA NTRS1987

Design of an MSAT-X mobile transceiver and related base and gateway stations

This paper summarizes the results of a design study of the mobile transceiver, base station, and gateway station for NASA's proposed Mobile Satellite Experiment (MSAT-X). Major ground segment system design issues such as frequency stability control, modulation method, linear predictive coding vocoder algorithm, and error control technique are addressed. The modular and flexible transceiver design is described in detail, including the core, RF/IF, modem, vocoder, forward error correction codec, amplitude-companded single sideband, and input/output modules, as well as the flexible interface. Designs for a three-carrier base station and a 10-carrier gateway station are also discussed, including the interface with the controllers and with the public-switched telephone networks at the gateway station. Functional specifications are given for the transceiver, the base station, and the gateway station.

Fang, Russell J. F.↗
NASA NTRS1991

On-board processing architectures for satellite B-ISDN services

Onboard baseband processing architectures for future satellite broadband integrated services digital networks (B-ISDN's) are addressed. To assess the feasibility of implementing satellite B-ISDN services, critical design issues, such as B-ISDN traffic characteristics, transmission link design, and a trade-off between onboard circuit and fast packet switching, are analyzed. Examples of the two types of switching mechanisms and potential onboard network control functions are presented. A sample network architecture is also included to illustrate a potential onboard processing system.

Inukai, Thomas↗
NASA NTRS1992

On-board processing satellite network architectures for broadband ISDN

Onboard baseband processing architectures for future satellite broadband integrated services digital networks (B-ISDN's) are addressed. To assess the feasibility of implementing satellite B-ISDN services, critical design issues, such as B-ISDN traffic characteristics, transmission link design, and a trade-off between onboard circuit and fast packet switching, are analyzed. Examples of the two types of switching mechanisms and potential onboard network control functions are presented. A sample network architecture is also included to illustrate a potential onboard processing system.

Inukai, Thomas↗
NASA NTRS1994

Ferroelectric Liquid Crystals In Aerodynamic Testing

The process of simultaneous optical visualization and quantitative measurement of aerodynamic boundary layer parameters requires new concepts, materials and utilization methods. Measurement of shear stress in terms of the transmitted or the reflected light intensity from an aligned ferroelectric liquid crystal (FLC) thin (approx. 1 micron) film deposited on a glass substrate has been the first step in this direction. In this paper, recent progress in utilization of FLC thin films for skin friction measurement and for studying the state of the boundary layer in a wind tunnel environment is reviewed. The switching characteristics of FLCs have been used to measure pressure from the newly devised system of partially exposed polymer dispersed ferroelectric liquid crystals (PEPDFLCs). In this configuration, a PEPDFLC thin film (approx. 10-25 microns) is sandwiched between two transparent conducting electrodes, one a rigid surface and the other a flexible sheet such as polyvinylidene fluoride or mylar. The switching characteristics of the film are a function of the pressure applied to the flexible transparent electrode and a predetermined bias voltage across the two electrodes. The results, considering the dielectrics of composite media, are discussed.

Parmar, Devendra S.↗