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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Role of deep levels and barrier height lowering in current-flow mechanism in 150 μ m thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors

Schottky barrier detectors (SBDs) require larger surface areas than conventional electronics to increase the detection efficiency although such SBDs manifest large diode ideality factors due to inhomogeneous areal distribution of surface barrier height (SBH). Inhomogeneous SBH distributions lead to various current flow mechanisms in SBDs, which need to be identified to optimize detector performance. In this Letter, we identify the current flow mechanism in large area Schottky barrier diodes for radiation detection fabricated on 150 μm thick n-4H–SiC epitaxial layers. The analysis of temperature-dependent forward current–voltage (I–V–T) characteristics of SBDs revealed two linear regions in current–voltage curves up to 450 K, one corresponding to the current flow through a low barrier patch, while the other corresponds to that of average barrier distribution. Applying a SBH distribution model to the reverse I–V–T characteristics, an activation energy of 0.76 eV for the current flow over the Schottky barrier was calculated. Additionally, the activation energy did not directly correspond to any of the defect levels observed from the deep level transient spectroscopy (DLTS). Above 450 K, a Schottky type barrier lowering suggested a current flow through a low barrier patch of ≈ 0.8 eV. The absence of any SBH lowering below 450 K indicated that the current corresponded to a neutrally charged trap level at ≈ 0.6 eV below the conduction band edge, which was consistent with DLTS measurements revealing the presence of an electron trap level Z1/2 at 0.59 eV below the conduction band edge.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4$\textit{H}$-SiC

Silicon-vacancy qubits in silicon carbide ( Si C ) are emerging tools in quantum-technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by focusing on the two silicon-vacancy qubits, V1 and V2, in 4$\textit{H}$-SiC. We apply density-functional theory beyond the Born-Oppenheimer approximation to describe the temperature-dependent mixing of electronic excited states assisted by phonons. We obtain a polaronic gap of around 5 and 22 meV for the V1 and V2 centers, respectively, which results in a significant difference in the temperature-dependent dephasing and zero-field splitting of the excited states, which explains recent experimental findings. Finally, we also compute how crystal deformations affect the zero-phonon line of these emitters. Our predictions are important ingredients in any quantum applications of these qubits sensitive to these effects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Growth and stability of Pb intercalated phases under graphene on SiC

Graphene intercalation is a novel way to control graphene's band structure and generate two-dimensional quantum materials with unusual spintronic and electronic properties. In spite of its importance, information about the intercalation mechanism is lacking, especially the role of low density domain boundaries between regions of graphene of different thickness. With high resolution surface diffraction we have systematically studied Pb intercalation on epi-graphene grown on SiC, with domain boundaries between buffer and single layer graphene. By examining the evolution of different diffraction spots as a function of tempertature, the location of Pb and stability of the intercalated phases underneath were determined.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Hardware Design and Demonstration of a 100kW, 99% Efficiency Dual Active Half Bridge Converter Based on 1700V SiC Power MOSFET

High efficiency, high density and galvanically isolated power converters are attractive for numerous medium voltage high power applications. This paper presents a 1.5kVdc, 100kW bidirectional Dual Active Half Bridge (DAHB) using newly developed 1.7kV SiC MOSFET modules. The DAHB achieved an efficiency of 98.6% at full load of 100kW and a maximum of 99% at 45kW, operating as an isolated DC/DC converter. The converter also achieved an efficiency of 97.8% operating as an isolated DC/AC inverter. An optimized PCB-based busbar design has significantly reduced the voltage overshoot across the device, making the design suitable for 1500Vdc input application such as 1500V PV inverters. Typical partial discharge inception voltage (PDIV) of the optimized PCB busbar is 1.7kVpeak with total charge <10pC. The power density of the DAHB converter is 1.8MVA/m 3 which is much higher than traditional two-stage industry products. The DAHB converter can be used as a building block for a 4.16kV/1MVA utility scale PV systems with input parallel and output series configuration.

Xu, Wei↗
DOE OSTI2021

An Inrush Current Limit Method for SiC-based Multi-level Grid-connected Converter During Low-Voltage Ride-Through

Low-voltage ride-through is one of the grid requirements for grid-connected converters, and during the transient of grid voltage change, a large inrush current could be induced due to the control delay of the converter. This inrush current is more severe in SiC-based multi-level converters due to the small filter inductance, which is selected based on harmonics consideration. In this paper, a PWM mask method is used to limit the inrush current of a cascaded H-bridge-based grid-connected converter during the transient of grid voltage change. Simulation and experiment results are provided to validate this method.

Li, Haiguo↗
DOE OSTI2023

Design and Demonstration of an 850 V dc to 13.8 kV ac 100 kW Three-phase Four-wire Power Conditioning System Converter Using 10 kV SiC MOSFETs

In this paper, an 850 V dc to 13.8 kV ac 100 kW modular multilevel three-phase four-wire dc/ac converter based on 10 kV SiC MOSFETs is designed and demonstrated. The design considerations of key components, including the dc-link, device cooling, gate driver, isolated gate driver power supply (GDPS), medium voltage (MV) ac filter inductor, MV and medium frequency transformer, and the mechanical design are discussed. Two converters are designed, and two prototypes are developed, to study the converter paralleling operation and scalability. Both converters are fully tested up to their voltage and power ratings. However, the two converters are not identical. Based on the design and test results of the first converter, the MV power stage, transformer design, GDPS, as well as the low voltage power stage in the second converter are improved for smaller size and/or higher efficiency. Compared to the version 1 converter, the version 2 converter achieves 49% volume reduction and 2 percentage point efficiency improvement, with a peak efficiency of 98.4% at the rated power.

Li, Haiguo↗
DOE OSTI2022

Triple Phase-Shift Optimization of SiC-based Dual-Active Bridge DC/AC Converter

This paper presents a loss-optimized Triple Phase-Shift (TPS) switching strategy for Dual-Active Bridge (DAB) based converters. The proposed strategy considers minimizing total converter loss with respect to minimizing device rms cur-rents, enabling Zero-Voltage Switching (ZVS) turn-on of devices and accurate control of device turn-off current. A model for switching currents is presented, followed by a loss model and optimization strategy. A 1.3kV/100kW prototype based on SiC MOSFETs was used in this work and experimental results up to 10kW show the proposed TPS strategy to be more efficient for operation.

Vetrivelan, Adithyan↗
DOE OSTI2024

A Multi-Metrics In Situ Aging Detector for SiC Power MOSFET Modules with Full Driver-Integration Capability

In this paper, the concept and prototype of an aging detector for silicon carbide (SiC) power metal oxide semiconductor field effect transistor (MOSFET) are proposed and described. It leverages the resonant peak values of gate-source voltage at different instants during the switching transients to decode the change of multiple aging indicators, such as the increases of on-state resistance and threshold voltage. Modeling-based analysis is conducted to support the idea. The detector can be fully integrated into gate drivers without any additional connection to the power stage and is functional during normal power stage operation. A prototype unit was built, and preliminary tests were conducted to validate the idea and the practicality of the detector.

aging↗
DOE OSTI2022

7.2 kV Three-Port SiC Single-Stage Current-Source Solid-State Transformer With 90 kV Lightning Protection

This article proposes a multiport modular single-stage current-source solid-state transformer (SST) for applications like photovoltaic, energy storage integration, electric vehicle fast charging, data center, etc. The 7.2 kV 50 kVA current-source SST consists of five input-series output-parallel modules, each based on 3.3 kV SiC reverse-blocking MOSFET-plus-diode modules. The proposed SST has some unique features. First, compared to the voltage-source or matrix converter-based SSTs, the current-source SST has a unique advantage of single-stage isolated AC/DC or AC/AC conversion with an inductive DC link, but no medium-voltage (MV) AC experiments have been reported. This article for the first time demonstrates MV AC current-source SST up to 7.5 kV peak. Second, the multiport SST has a buffer port for active power decoupling (APD) or energy storage integration. The double-line-frequency power ripple from single-phase AC grid normally results in a large capacitor size in MV SSTs. The APD scheme is proposed in MV applications for the first time to enable a reduced DC link and the electrolytic capacitor-less SST with high reliability. Third, as a direct grid-connected converter without line-frequency transformer, insulation and protection are critical. A medium-frequency transformer design passes 55 kV basic-insulation level (BIL) and 60 kV high potential dielectrics withstand test with only 0.09% leakage inductance. Importantly, a lightning protection scheme is presented to protect the SST itself from 90 kV BIL impulse. Fourth, the proposed current-source SST topology is a modular soft-switching solid-state transformer (M-S4T) with full-range zero-voltage switching and controlled dv/dt for low electromagnetic interference. Furthermore, these concepts are verified in a three-port M-S4T prototype with forced oil cooling under single-module, stacked-module, steady-state, and dynamic operations.

14 SOLAR ENERGY↗
DOE OSTI2022

1 kV, 10-kW SiC-Based Quadruple Active Bridge DCX Stage in a DC to Three-Phase AC Module for Medium-Voltage Grid Integration

Interfacing low voltage dc to medium voltage three-phase ac grid is often based on series-stackable modular converter architectures. To minimize energy storage requirements, it is advantageous to employ a quadruple active bridge (QAB) stage operating as a "dc transformer" in each stackable module. The QAB stage offers three isolated dc link voltages, which then allow for flexible stacking of three single-phase dc-to-ac inverter stages. Each of the module phases processes a pulsating power having a component at twice the line frequency. This presents a challenge in maintaining zero voltage switching (ZVS) on the secondary sides of the QAB during low-power portions of the line cycle. This article is focused on the design of the QAB stage. A detailed analysis of ZVS switching waveforms is presented, including effects of nonlinear device capacitances. It is shown how ZVS can be achieved at all times using a relatively small circulating current provided by the magnetizing inductance of the high-frequency transformer. Analytical expressions are given for the optimal values of the magnetizing inductance and the dead times of the QAB primary and secondary bridges. This approach is verified by experimental results on a 1 kV, 10-kW SiC-based prototype, demonstrating a relatively flat efficiency curve with a peak efficiency of 97.1% at 75% load.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Single and Double-Sided Jet Impingement Cooling for SiC-Based Power Modules

Efficient thermal management of power electronics systems is crucial for higher reliability. With the miniaturization of systems, high-loss-density electronics require cooling systems that can extract a large amount of heat. This study explored a liquid-jet-impingement-based direct substrate cooling system for single-sided and double-sided cooling to improve heat extraction efficiency and improve the power density by reducing the volume and mass. The cooling system was implemented for a SiC-based direct bonded copper substrate. Numerical simulations were performed to determine the effects of nozzle diameter, the number of nozzles, and nozzle array orientation on single-sided cooling and thermal performance gain over double-sided cooling. A novel manifold design was proposed that reduced the volume and mass of the manifold and still achieved the target power density. The performance of the proposed design was compared with the pin-fin-based cooling system used in the BMW I3 module, and a comparative analysis was done.

Barua, Himel↗
DOE OSTI2019

Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes

The effect of irradiation with high-energy (0.9 MeV) electrons on surge currents in high-voltage (operating voltage 1700 V) 4H -SiC Schottky p-n diodes is studied in the microsecond range of the forward-current pulse duration. With increasing irradiation dose Φ, the hole injection threshold steadily grows, and the base-modulation level by minority carriers (holes) becomes lower. At Φ = 1.5 × 10{sup 16} cm{sup –2}, no hole injection is observed up to forward voltages of ~30 V and forward current densities of j ≈ 9000 A/cm{sup 2}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Impurity Characterization in Device Quality Hot Filament Chemical Vapor Deposition (HFCVD) Grown 3C Silicon Carbide (3C-SiC) (CRADA CRD-17-00684 Final Report)

BASiC-3C needs advanced characterization of material properties to continue making progress towards high quality 3C-SiC. For over 190 growth runs, BASiC 3C has relied almost exclusively on feedback from commercially available metrology such as cross-sectional FESEM, AFM, Raman, XRD and SIMS. This standard feedback loop has enabled BASiC 3C to "rough-in" growth conditions and achieve growth of epitaxial growth over a 4" wafer size, at respectable growth rates. Still, the material quality deduced from X-ray rocking FWMH and APB density must be further improved to be viable for our industry partners. Electron Spin Resonance (EPR) and time-resolved photoluminescence (TRPL) data and interpretation by an experienced scientist is identified as a critical, yet not commercially readily available feedback that would enable further material improvement.

36 MATERIALS SCIENCE↗
DOE OSTI2021

HFIR SiC Bowing Test Ready to Insert

This report describes the successful assembly of a High Flux Isotope Reactor (HFIR) irradiation experiment designed to assess radiation-induced lateral bowing of silicon carbide fiber–reinforced, silicon carbide matrix composite (SiC/SiC) components under a radial fast neutron flux gradient. Excessive bowing of a SiC/SiC channel box in a boiling water reactor could potentially interfere with control blade movements. Similar concerns exist for SiC/SiC fuel cladding in light water reactors. The experiment described herein will provide experimental validation of the structural response of a miniature SiC/SiC channel box and tube specimens with pressurized water reactor diameters during irradiation. The significant radial fast neutron flux gradients that exist in the permanent reflector of HFIR were characterized using detailed three-dimensional neutronic calculations. The three-dimensional displacement damage dose rate profile and the resulting volumetric swelling in SiC were used as inputs to structural analyses that predicted the deformation and stresses in the channel box specimen. The specimens were thoroughly characterized prior to irradiation using traditional dimensional inspection and surface profilometry so that these measurements can later be compared with similar measurements that will be made post-irradiation to determine radiation-induced deformations. Furthermore, fine engraving markers were inscribed along all outer surfaces of the specimen and mapped using a digital microscope and a three-dimensional stage. This technique allowed for accurate measurements of the marker spacings, which can be compared with similar measurements that will be made post-irradiation to provide local radiation-induced strain mapping. The experiment was successfully assembled and is scheduled for insertion during HFIR cycle 492, which is currently scheduled to run from May 25, 2021 to June 18, 2021.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2021

Integrated 10 kV SiC VSD and High-Speed MW Motor for Gas Compression Systems

The objective of this project was to develop and test an integrated drive package including a 10 kV silicon carbide (SiC) - based variable-speed drive (VSD) and a high-speed megawatt-rated motor. This design was intended for gas compression applications that meet the objectives and technical targets of DE-FOA-0001208.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

SiC Based Modular Transformer-less MW-Scale Power Conditioning System and Control for Flexible CHP System

This project aims at developing a SiC-based, modular, transformer-less (60-Hz-transformers-free), MW-scale, four-wire DC/AC power conditioning system (PCS) converter, and a corresponding control system for flexible-CHP (F-CHP) systems. With the help of an F-CHP controller and power electronics converters, different CHP sources, renewable sources, and batteries can be assembled to the DC grid, which is then connected to the medium voltage (MV) AC grid through the PCS converter. To meet grid support and performance requirements, the F-CHP controller design and PCS converter design follow IEEE 1547 and IEEE 2030.7 standards. Five main tasks, including PCS converter design, F-CHP controller development, PCS converter prototype building and testing, F-CHP controller testing, and PCS paralleling, have been carried out. In this project, the F-CHP controller testing has been completed in simulation, HIL and HTB, and the PCS converter prototypes have been successfully built and tested.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

High-Efficiency Modular SiC-based Power-Converter for Flexible-CHP Systems with Stability-Enhanced Grid-Support Functions

This project seeks to develop a modular, scalable MV power converter featuring stability-enhanced grid-support functions for future grid-interface applications in flexible combined heat and power (F-CHP) cogeneration plants, being fully compliant with the IEEE Standard 1547, category B—for operation in local areas with high aggregated distributed energy resource (DER) penetration, and also with the IEEE standard for the specification of microgrid controllers, namely IEEE Std 2030.7, with the goal to enable F-CHP systems for both microgrid and standalone applications. Further, the proposed converter will use a modular circuit topology, the MMC, which is scalable both in voltage and current by interconnecting power-cell building blocks, thus flexibly suiting the needs of F-CHP systems in the 1–20 MWe range. Furthermore, the use of 10 kV SiC MOSFET devices will minimize the number of power-cells needed to operate in 2–13.8 kV MV distribution systems, but more importantly, they will render feasible a power conversion efficiency > 98 %, and a power density > 10 kW/l. This is highly relevant given that these are two key performance metrics that will further increase the value of F-CHP systems by shortening the time required to recover their investment costs.

14 SOLAR ENERGY↗
DOE OSTI2023

Quality Control Methods for Measurement of UCO Kernel Composition and SiC Microstructure

Quality control (QC) is critically important to tristructural-isotropic (TRISO) particle fuels owing to the complexity of and reliance on the fuel form to contain fission products during irradiation. Characterization methods for particle fuel QC have decades of history and have continued to develop as new insights into fuel performance inform revised fuel specifications and as advances in underlying technologies expand the possibilities of what may be characterized. Two relatively new methods for characterization of TRISO fuels have been published in open literature: optical microscopy image analysis for mixed uranium carbide/uranium oxide (UCO) kernel composition analysis and automated grain boundary detection in backscattered electron (BSE) images of the silicon carbide (SiC) layer in TRISO particles for grain size characterization. Suggestions and guidelines for the application of these methods to TRISO fuel qualification are provided in this report.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗