Radiation damage effects in a surface barrier detector after irradiation by 4.5 MeV alpha particles
Alpha particles radiation damage effects in silicon surface barrier detector
Hanser, F. A.↗
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Field ionization device used for measuring the pulse height defect of He/+/ in silicon
A neutral particle detector using field ionization and liquid-nitrogen-cooled solid state detectors has been developed to investigate the pulse height defect of low energy He(+) ions in silicon. The field ionization tip is fabricated from a short length of tungsten wire; a typical detector is of the surface-barrier Si type with a thin Au window and low capacitance (about 15 pF); the assembly is mounted in a cylindrical vacuum chamber which is pumped to about 10 to the -6th torr. As an example, pulse height distributions for He(+) and H(+) taken at tip bias of 25.7 kV are presented. The detected energy of the H and He ions are studied as a function of the actual energies of accelerated ions, for a detector having a gold front conducting surface layer of 32 micrograms/sq cm.
Curtis, C. C.↗
Stacked Metal Silicide/Silicon Far-Infrared Detectors
Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.
Maserjian, Joseph↗
Technique for mounting pyroelectric detector arrays
Technique is developed at Langley Research Center for mounting pyroelectric detector arrays on silicon integrated circuits. Procedure incorporates normal silicon integrated-circuit technology to form quasi-free mounts for detector arrays. Advantages of technique include lower cost, better image registration, and improved reliability.
Breckenridge, R. A.↗
A high resolution semiconductor detector for applications in space
Nuclear radiation detectors with volumes of approximately 1 cu cm was fabricated from single crystals of germanium-silicon alloy containing as much as 20 weight percent germanium. The properties of these detectors were investigated and will be discussed. Tests reveal that the gamma ray photoelectric peak efficiency of an alloy detector with only 12 weight percent germanium is approximately 4 times that of a silicon detector of equal volume. The room temperature roomure appears to be a good possibility. Storage for long periods at room temperature does not seem to adversely affect these devices. The results of preliminary radiation damage experiments suggest that the alloy detectors possess a radiation damage resistance far greater than that of silicon.
Alexander, P.↗
Few arc-minute and keV resolutions with the TIGRE Compton telescope
The tracking and imaging gamma ray experiment (TIGRE) Compton telescope concept can provide an angular resolution of a few arcmin, an energy resolution of a few keV and high sensitivity, while providing the wide field of view necessary for surveying and monitoring observations. Silicon and CdZnTe strip detectors are used to detect Compton pair events and determine their incident directions and energies. Above 400 keV, Compton recoil electrons are tracked through successive layers of thin silicon strip detectors. Compton scattered photons are detected with CdZnTe strip detectors. Pair electrons and positrons are tracked to provide high sensitivity observations in the 10 to 100 MeV range. Polarization studies are performed with large angle Compton scatter events. The TIGRE concept and development status are described.
Zych, A.↗
ATS-6 - Synchronous orbit trapped radiation studies with an electron-proton spectrometer
The paper discusses the University of Minnesota experiment on ATS-6 designed to study the origin and dynamics of high-energy electrons and protons in the outer radiation belt and in the near-earth plasma sheet. The experiment consists of two nearly identical detector assemblies, each of which is a magnetic spectrometer containing four gold-silicon surface barrier detectors. The instrument provides a clean separation between protons and electrons by the combination of pulse height analysis and magnetic deflection.
Walker, R. J.↗
Characterization of Photon-Counting Detector Responsivity for Non-Linear Two-Photon Absorption Process
Sub-band absorption at 1550 nm has been demonstrated and characterized on silicon Geiger mode detectors which normally would be expected to have no response at this wavelength. We compare responsivity measurements to singlephoton absorption for wavelengths slightly above the bandgap wavelength of silicon (approx. 1100 microns). One application for this low efficiency sub-band absorption is in deep space optical communication systems where it is desirable to track a 1030 nm uplink beacon on the same flight terminal detector array that monitors a 1550 nm downlink signal for pointingcontrol. The currently observed absorption at 1550 nm provides 60-70 dB of isolation compared to the response at 1064 nm, which is desirable to avoid saturation of the detector by scattered light from the downlink laser.
Geiger mode detector↗
Developing the Future of Gamma-ray Astrophysics with Monolithic Silicon Pixels
This paper explores the potential of AstroPix, a project to develop Complementary Metal Oxide Semiconductor (CMOS) pixels for the next generation of space-based high-energy astrophysics experiments. Multimessenger astrophysics is a rapidly developing field whose upcoming missions need support from new detector technology such as AstroPix. ATLASPix, a monolithic silicon detector optimized for the ATLAS particle detector at CERN, is the beginning of the larger AstroPix project. Energy resolution is a driving parameter in the reconstruction of gamma-ray events, and therefore the characterization of ATLASPix energy resolution is the focus of this paper. The intrinsic energy resolution of the detector exceeded our baseline requirements of 10% at 60 keV. The digital output of ATLASPix results in energy resolutions insufficient to advance gamma-ray astronomy. However, the results from the intrinsic energy resolution indicate the digital capability of the detector can be redesigned, and the next generation of pixels for the larger AstroPix project have already been constructed. Iterations of AstroPix-type pixels are an exciting new technology candidate to support new space-based missions.
Isabella Brewer↗
YAG aerosol lidar
The Global Atmospheric Backscatter Experiment (GLOBE) Mission, using the NASA DC-8 aircraft platform, is designed to provide the magnitude and statistical distribution of atmospheric backscatter cross section at lidar operating wavelengths. This is a fundamental parameter required for the Doppler lidar proposed to be used on a spacecraft platform for global wind field measurements. The prime measurements will be made by a CO2 lidar instrument in the 9 to 10 micron range. These measurements will be complemented with the Goddard YAG Aerosol Lidar (YAL) data in two wavelengths, 0.532 and 1.06 micron, in the visible and near-infrared. The YAL, is being designed to utilize as much existing hardware, as feasible, to minimize cost and reduce implementation time. The laser, energy monitor, telescope and detector package will be mounted on an optical breadboard. The optical breadboard is mounted through isolation mounts between two low boy racks. The detector package will utilize a photomultiplier tube for the 0.532 micron channel and a silicon avalanche photo detector (APD) for the 1.06 micron channel.
Sullivan, R.↗
N-Type delta Doping of High-Purity Silicon Imaging Arrays
A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.
Blacksberg, Jordana↗
Detector arrays for low-background space infrared astronomy
The status of development and characterization tests of integrated infrared detector array technology for astronomy applications is described. The devices under development include intrinsic, extrinsic silicon, and extrinsic germanium detectors, with hybrid silicon multiplexers. Laboratory test results and successful astronomy imagery have established the usefulness of integrated arrays in low-background astronomy applications.
Mccreight, C. R.↗
Detector arrays for low-background space infrared astronomy
The status of development and characterization tests of integrated infrared detector array technology for astronomy applications is described. The devices under development include intrinsic, extrinsic silicon, and extrinsic germanium detectors, with hybrid silicon multiplexers. Laboratary test results and successful astronomy imagery have established the usefulness of integrated arrays in low-background astronomy applications.
Mccreight, C. R.↗
Low-background detector arrays for infrared astronomy
The status of a program which develops and characterizes integrated infrared (IR) detector array technology for space astronomical applications is described. The devices under development include intrinsic, extrinsic silicon, and extrinsic germanium detectors, coupled to silicon readout electronics. Low-background laboratory test results include measurements of responsivity, noise, dark current, temporal response, and the effects of gamma-radiation. In addition, successful astronomical imagery has been obtained on some arrays from this program. These two aspects of the development combine to demonstrate the strong potential for integrated array technology for IR space astronomy.
Mccreight, C. R.↗
Radiation Response of Emerging High Gain, Low Noise Detectors
Data illustrating the radiation response of emerging high gain, low noise detectors are presented. Ionizing dose testing of silicon internal discrete avalanche photodiodes, and 51-MeV proton testing of InGaAs/InAlAs avalanche photodiodes operated in Geiger mode are discussed.
avalanche photodiodes↗
Measurements of electron detection efficiencies in solid state detectors.
Detailed laboratory measurement of the electron response of solid state detectors as a function of incident electron energy, detector depletion depth, and energy-loss discriminator threshold. These response functions were determined by exposing totally depleted silicon surface barrier detectors with depletion depths between 50 and 1000 microns to the beam from a magnetic beta-ray spectrometer. The data were extended to 5000 microns depletion depth using the results of previously published Monte Carlo electron calculations. When the electron counting efficiency of a given detector is plotted as a function of energy-loss threshold for various incident energies, the efficiency curves are bounded by a smooth envelope which represents the upper limit to the detection efficiency. These upper limit curves, which scale in a simple way, make it possible to easily estimate the electron sensitivity of solid-state detector systems.
Lupton, J. E.↗
Observations of the ratio of low-energy cosmic-ray positrons and electrons during solar quiet times
Simultaneous observations of the quiet-time interplanetary positron and electron spectra between 0.16 and 1.6 MeV are reported. The measurements were made in selected time intervals between October 1, 1972 and February 1, 1973 with the Caltech Electron/Isotope Spectrometer on the IMP-7 satellite. The detector system consists of a stack of 11 silicon surface-barrier detectors surrounded by a plastic scintillator anti-coincidence cup. The method of e+ identification and possible background effects are discussed and upper limits to the 0.16 to 1.6 MeV quiet-time positron flux are reported. During this period positrons amounted to less than 20% of the total 0.16 to 1.6 MeV electron flux.
Hurford, G. J.↗
Development of Low-Noise High Value Chromium Silicide Resistors for Cryogenic Detector Applications
Extremely high sensitivity detectors, such as silicon bolometers are required in many NASA missions for detection of photons from the x-ray to the far infrared regions. Typically, these detectors are cooled to well below the liquid helium (LHe) temperature (4.2 K) to achieve the maximum detection performance. As photoconductors, they are generally operated with a load resistor and a pre-set bias voltage, which is then coupled to the input gate of a source-follower Field Effect Transistor (FET) circuit. It is imperative that the detector system signal to noise performance be limited by the noise of the detector and not by the noise of the external components. The load resistor value is selected to optimize the detector performance. These two criteria tend to be contradictory in that these detectors require load resistors in the hundreds of megaohms, which leads to a higher Johnson noise. Additionally, the physical size of the resistor must be small for device integration as required by such missions as the NASA High Resolution Airborne Wide-Band Camera (HAWC) instrument and the Submillimeter High Angular Resolution Camera (SHARC) for the Caltech Submillimeter Observatory (CSO). We have designed, fabricated and characterized thin film resistors using a CrSi/TiW/Al metal system on optical quality quartz substrates. The resistor values range from 100 megaohms to over 650 megaohms and are Johnson noise limited at LHe temperatures. The resistor film is sputtered with a sheet resistance ranging from 300 ohms to 1600 ohms and the processing sequence developed for these devices allows for chemically fine tuning the sheet resistance in-situ. The wafer fabrication process was of sufficiently high yield (>80%) providing clusters of good resistors for integrated multiple detector channels, a very important feature in the assembly of these two instruments.
Jhabvala, Murzy↗